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    IGBT 60N60C2D1 Search Results

    IGBT 60N60C2D1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 60N60C2D1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXGR60N60C2

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60C2 IXGR 60N60C2D1 Lightspeed 2TM Series Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 35 ns Preliminary Data Sheet IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings


    Original     		PDF ISOPLUS247TM 60N60C2 60N60C2D1 IC110 IF110 IXGR60N60C2D1) ISOPLUS247 2x61-06A IXGR60N60C2

    60N60C2

    Abstract: gr60n60 IXGR60N60C2D1 siemens igbt 75a 60N60C2 DI GR60N60C2 60N60 ISOPLUS247 IF110 GR60N60C2D1
    Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60C2 IXGR 60N60C2D1 Lightspeed 2TM Series Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 35 ns Preliminary Data Sheet IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings


    Original     		PDF ISOPLUS247TM 60N60C2 60N60C2D1 IC110 IF110 IXGR60N60C2D1) 2x61-06A 60N60C2 gr60n60 IXGR60N60C2D1 siemens igbt 75a 60N60C2 DI GR60N60C2 60N60 ISOPLUS247 IF110 GR60N60C2D1

    60N60C2

    Abstract: 60n60c 60N60C2D ISOPLUS247 PLUS247 60N60
    Text: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60C2 IXGR 60N60C2D1 Lightspeed 2TM Series Electrically Isolated Back Surface IXGR_C2 VCES IC25 VCE(sat) tfi(typ) IXGR_C2D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600


    Original     		PDF ISOPLUS247TM 60N60C2 60N60C2D1 IC110 728B1 123B1 728B1 065B1 60N60C2 60n60c 60N60C2D ISOPLUS247 PLUS247 60N60

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60C2 IXGR 60N60C2D1 Lightspeed 2TM Series Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 35 ns Preliminary Data Sheet IXGR_C2 Symbol Test Conditions V CES TJ = 25°C to 150°C


    Original     		PDF ISOPLUS247TM 60N60C2 60N60C2D1 IC110 IF110 IXGR60N60C2D1) ISOPLUS247 2x61-06A

    siemens igbt 75a

    Abstract: PLUS247
    Text: Advance Technical Data HiPerFAST TM IGBT with Diode IXGK 60N60C2D1 VCES IXGX 60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES


    Original     		PDF 60N60C2D1 IC110 2x61-06A siemens igbt 75a PLUS247

    60-06A

    Abstract: 60N60C2D1 60N60C2D IF110 PLUS247
    Text: IXGK 60N60C2D1 VCES IXGX 60N60C2D1 I C25 VCE sat C2-Class High Speed IGBTs tfi(typ) HiPerFASTTM IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM


    Original     		PDF 60N60C2D1 IC110 IF110 O-264 0-06A 60-06A 60N60C2D IF110 PLUS247

    60N60C2D1

    Abstract: No abstract text available
    Text: IXGK 60N60C2D1 VCES IXGX 60N60C2D1 I C25 VCE sat C2-Class High Speed IGBTs tfi(typ) HiPerFASTTM IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM


    Original     		PDF 60N60C2D1 IC110 O-264 IF110 PLUS247 0-06A

    IGBT 60N60C2D1

    Abstract: siemens igbt 75a PLUS247 60N60C2D1
    Text: Advance Technical Data HiPerFAST TM IGBT with Diode IXGK 60N60C2D1 VCES IXGX 60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES


    Original     		PDF 60N60C2D1 IC110 2x61-06A IGBT 60N60C2D1 siemens igbt 75a PLUS247

    60N60C2D1

    Abstract: IGBT 60N60C2D1 MD 202 60N60 siemens igbt 75a TO-264-aa 60-06A IF110 PLUS247 HIPERFAST IGBT WITH DIODE
    Text: HiPerFAST TM IGBT with Diode IXGK 60N60C2D1 VCES IXGX 60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM


    Original     		PDF 60N60C2D1 IC110 IF110 O-264 0-06A IGBT 60N60C2D1 MD 202 60N60 siemens igbt 75a TO-264-aa 60-06A IF110 PLUS247 HIPERFAST IGBT WITH DIODE

    60N60C2D1

    Abstract: 60N60C2 DI IGBT 60N60C2D1 C9VI
    Text: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IXGN 60N60C2 IXGN60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) E Symbol Test Conditions V CES TJ = 25°C to 150°C D1 E Maximum Ratings 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW = 600 V = 75 A


    Original     		PDF 60N60C2 IXGN60N60C2D1 IC110 OT-227B, 2x61-06A 60N60C2D1 60N60C2 DI IGBT 60N60C2D1 C9VI

    60N60C2

    Abstract: 60N60C2D1
    Text: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IXGN 60N60C2 IXGN60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) E Symbol Test Conditions V CES TJ = 25°C to 150°C D1 E Maximum Ratings 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW = 600 V = 75 A


    Original     		PDF 60N60C2 IXGN60N60C2D1 IC110 OT-227B, 2x61-06A 60N60C2D1

    IXGN60N60C2

    Abstract: 60N60C2 60N60C2D1 ixgn60N60 IXGN60N60C2D1 IGBT 60N60C2D1 siemens igbt siemens igbt 75a high current igbt 60N60C2D
    Text: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IXGN 60N60C2 IXGN60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) E Symbol Test Conditions V CES TJ = 25°C to 150°C D1 E Maximum Ratings 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW = 600 V = 75 A


    Original     		PDF 60N60C2 IXGN60N60C2D1 OT-227B, IC110 2x61-06A IXGN60N60C2 60N60C2 60N60C2D1 ixgn60N60 IGBT 60N60C2D1 siemens igbt siemens igbt 75a high current igbt 60N60C2D

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2