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    IGBT 600 35 Search Results

    IGBT 600 35 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
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    IGBT 600 35 Price and Stock

    Power Integrations 1SP0635V2M1-1MBI3600VD-170E

    Gate Drivers ONLY for FUJI 1MBI3600VD-170E module
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1SP0635V2M1-1MBI3600VD-170E
    • 1 -
    • 10 $327.46
    • 100 $317.38
    • 1000 $317.38
    • 10000 $317.38
    		Get Quote

    IGBT 600 35 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: STGIPS35K60L1 SLLIMM small low-loss intelligent molded module IPM, single phase - 35 A, 600 V short-circuit rugged IGBT Datasheet − production data Features • IPM 35 A, 600 V single phase IGBT including control ICs for gate driving and free-wheeling


    Original     		PDF STGIPS35K60L1

    Untitled

    Abstract: No abstract text available
    Text: STGIPS35K60L1 SLLIMM small low-loss intelligent molded module IPM, single phase - 35 A, 600 V short-circuit rugged IGBT Preliminary data Features • IPM 35 A, 600 V single phase IGBT including control ICs for gate driving and free-wheeling diodes ■


    Original     		PDF STGIPS35K60L1 SDIP-22L

    Untitled

    Abstract: No abstract text available
    Text: STGIPS35K60L1 SLLIMM small low-loss intelligent molded module IPM, single phase - 35 A, 600 V short-circuit rugged IGBT Datasheet − production data Features • IPM 35 A, 600 V single phase IGBT including control ICs for gate driving and free-wheeling


    Original     		PDF STGIPS35K60L1

    STGIPS35K60L1

    Abstract: Stgips35k60 GIPS35K60L1
    Text: STGIPS35K60L1 SLLIMM small low-loss intelligent molded module IPM, single phase - 35 A, 600 V short-circuit rugged IGBT Preliminary data Features • IPM 35 A, 600 V single phase IGBT including control ICs for gate driving and free-wheeling diodes ■


    Original     		PDF STGIPS35K60L1 STGIPS35K60L1 Stgips35k60 GIPS35K60L1

    Untitled

    Abstract: No abstract text available
    Text: STGIPS35K60L1 SLLIMM small low-loss intelligent molded module IPM, single phase - 35 A, 600 V short-circuit rugged IGBT Datasheet − production data Features • IPM 35 A, 600 V single phase IGBT including control ICs for gate driving and free-wheeling


    Original     		PDF STGIPS35K60L1

    IXGH20N60AU1

    Abstract: IXGH20N60U1 20N60AU1 *GH20N60AU1
    Text: Low VCE sat IGBT with Diode High speed IGBT with Diode VCES Combi Packs IXGH 20 N60U1 600 V IXGH 20 N60AU1 600 V Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 600 600 V V VGES VGEM Continuous Transient


    Original     		PDF N60U1 N60AU1 O-247 IXGH20N60U1 IXGH20N60AU1 IXGH20N60AU1 IXGH20N60U1 20N60AU1 *GH20N60AU1

    49n6

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT with HiPerFRED IXGN 49N60BD3 VCES IC25 VCE sat = 600 V = 75 A = 2.5 V Buck configuration IGBT Preliminary data sheet Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


    Original     		PDF 49N60BD3 OT-227B, 0-06A 49n6

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT with HiPerFRED IXGN 50N60BD3 VCES IC25 VCE sat = 600 V = 75 A = 2.5 V Buck configuration IGBT Preliminary data sheet Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


    Original     		PDF 50N60BD3 OT-227B, 0-06A

    ID110

    Abstract: No abstract text available
    Text: Advance Technical Information HiPerFASTTM IGBT C2-Class High Speed IGBT IXGA IXGP IXGA IXGP 16N60C2 16N60C2 16N60C2D1 16N60C2D1 VCES IC25 VCE sat = 600 V = 40 A = 3.0 V = 35 ns tfi(typ) D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600


    Original     		PDF 16N60C2 16N60C2D1 16N60C2D1 IC110 ID110 O-263 O-220

    16N60

    Abstract: 16N60C2D1
    Text: Advance Technical Information HiPerFASTTM IGBT C2-Class High Speed IGBT IXGA IXGP IXGA IXGP 16N60C2 16N60C2 16N60C2D1 16N60C2D1 VCES IC25 VCE sat = 600 V = 40 A = 3.0 V = 35 ns tfi(typ) D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600


    Original     		PDF 16N60C2 16N60C2D1 IC110 ID110 16N60C2D1 O-220 728B1 123B1 16N60

    10N60A

    Abstract: IGBT 10N60 10N60 10N60 e N60A
    Text: Low VCE sat IGBT High speed IGBT IXGH 10 N60 IXGH 10 N60A Maximum Ratings VCES IC25 VCE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V Symbol Test Conditions VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM


    Original     		PDF 10N60A 10N60 10N60 10N60A 10N60U1 IGBT 10N60 10N60 e N60A

    igbt module

    Abstract: QID0660009 IGBT 600V 600A resistance ALUMINUM
    Text: QID0660009 Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Dual IGBT Module 600 Amperes / 600 Volts Description: Powerex Dual IGBT Module is designed specially for customer applications. Features: „ „ „ „ „ „ „ „ Dim Inches Millimeters


    Original     		PDF QID0660009 -1200A/ igbt module QID0660009 IGBT 600V 600A resistance ALUMINUM

    Untitled

    Abstract: No abstract text available
    Text: SKiM606GD066HD Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Ts = 25 °C 641 A Ts = 70 °C 512 A 600 A ICnom ICRM VGES SKiM 63 tpsc Trench IGBT Modules SKiM606GD066HD Tj ICRM = 2xICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V


    Original     		PDF SKiM606GD066HD

    STGB3NB60KD

    Abstract: STGB3NB60KDT4 STGD3NB60K STGD3NB60KT4 STGP3NB60K STGP3NB60KD STGP3NB60KDFP GD3NB60K GP3NB60K L4914
    Text: STGP3NB60K - STGD3NB60K STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT TYPE STGP3NB60K STGD3NB60K STGP3NB60KD STGP3NB60KDFP STGB3NB60KD • ■ ■ ■ ■ ■ ■ VCES 600 600 600 600 600 VCE sat (Typ) @125°C


    Original     		PDF STGP3NB60K STGD3NB60K STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD O-220/DPAK/D2PAK STGP3NB60K STGP3NB60KD STGP3NB60KDFP STGB3NB60KD O-220 STGB3NB60KD STGB3NB60KDT4 STGD3NB60K STGD3NB60KT4 STGP3NB60KD STGP3NB60KDFP GD3NB60K GP3NB60K L4914

    FGT313

    Abstract: FGT412
    Text: 2-3 IGBT Selection Guide By VCES VCES V 330 330 400 600 600 600 600 600 600 IC (A) 20 30 20 20 25 30 30 50 50 PC (W) 35 35 35 35 60 60 60 150 150 Part Number Package FGT312 FGT313 FGT412 FGT612 FGM622S FGM603 FGM623S MGD623N MGD623S TO220F(FM20) TO220F(FM20)


    Original     		PDF FGT312 FGT313 FGT412 FGT612 FGM622S FGM603 FGM623S MGD623N MGD623S O220F FGT313 FGT412

    to-3pl

    Abstract: igbt to220 1MBC15-060 1MBH50D-060 1MB30-060 1MB20-060 1MBC05-060 1MBC05D-060 1MBC10D-060 1MBG10D-060
    Text: 22307^5 GGDMODO 70b • s DISCRETE IGBT 600 VOLT, DISCRETE IGBT • 5 - 50 Amps Device Vces Type lc Pc VcE(sat V g e = 15V Cont. Per IGBT Max. lc Watts Volts Amps Volts Amps 1MBC05-060 600 5 1M B C 10-060 600 600 600 : 1M BC15-060 1M B20-060 Switching Time (Max.)


    OCR Scan     		PDF 1MBC05-060 O-220 BC10-060 1MBC15-060 1MB20-060 1MB30-060 1MBH50-060 ERW01-060 to-3pl igbt to220 1MBH50D-060 1MBC05D-060 1MBC10D-060 1MBG10D-060

    1MBC15-060

    Abstract: 1mb12-140 TO-3PL 1MBH50D-060 collmer igbt
    Text: DISCRETE IGBT 600 VOLT, DISCRETE IGBT • 5 - 5 0 Amps Device Type V ces Pc lc Tc=25°C Tc=80°C Tc=100°C Volts Amps Amps Amps 1MBC05-060 1MBC10-060 1MBC15-060 1MB20-060 600 600 600 600 13 15 5 10 1MB30-060 1MBH50-060 600 600 20 24 38 48 82 20 30 Vge = 15V


    OCR Scan     		PDF 1MBC05-060 1MBC10-060 1MBC15-060 1MB20-060 1MB30-060 1MBH50-060 O-220 1MBC05D-060 1mb12-140 TO-3PL 1MBH50D-060 collmer igbt

    2mb1200

    Abstract: DIODE s3l 2MB1300 2mb1200l 2MB1200LB-060 1MB1300L-060 1mb1400l-060 1MBI50L-060 2MB1100L-060 2MBI50L-060
    Text: m 2 E 3 & 7 oooa'ì'ì? 513 IGBT • 600 VOLT, F-SERIES MODULES • Low saturation voltage Device Pc VcE sat R th RTH VF W Per IGBT Max. lc ton toff tf IGBT Diòde Max. Max. Am ps W atts V olts Am ps jjse c. usee. usee. °C/W °C/W Volts usee. 600 600 600


    OCR Scan     		PDF 2MBI50F-060 2MBI75F-060 2MBI100F-060 2MBI150F-060 2MBI200F-060 2MBI300F-060 2MB1200LB-060 2MBI300L-060 2MBI300LB-060 2MBI400L-060 2mb1200 DIODE s3l 2MB1300 2mb1200l 1MB1300L-060 1mb1400l-060 1MBI50L-060 2MB1100L-060 2MBI50L-060

    Untitled

    Abstract: No abstract text available
    Text: STANDARD HERMETIC IGBT MODULES WITH GATE DRIVERS HIGH SPEED IG BT DEVICES WITH FAST REVERSE RECOVERY DIODES IGBT CHARACTERISTICS Tc=90°C Continuous Collector Current lc @ To=25°C Pulsed Collector Current T c=25°c 1 ms Volts Amps Amps Amps 600 600 600 600


    OCR Scan     		PDF SPM2G48-60 SPM2G65-60 SPM2G75-60 SPM2G85-60 SPM4G48-60 SPM6G48-60 SPM6G65-60

    LT 220 diode

    Abstract: No abstract text available
    Text: DISCRETE IGBT 600 VO LT, D IS C R E T E IGBT • 5-50 Amps Device Vces !' Type Volts 60B 1MBC05-060 1MBC10-060 1MBC15-060 1MB20-060 1MB30-060 1MBH50-060 600 600 600 600 600 V g e =15V lc Cont. Pc Per&BT VcE sal Max. Amps 5 10 15 20 30 50 Watts Volts 3.0 3.0


    OCR Scan     		PDF 1MBC05-060 1MBC10-060 1MBC15-060 1MB20-060 1MB30-060 1MBH50-060 TQ-22Q O-220 LT 220 diode

    2mb1200

    Abstract: 2mb1200lb-060 2MBI100F-060 M-219 m219 1MBI300F-060 2MBI150F-060 2mbi200f 2MBI300F-060 2MBI50F-060
    Text: m 2 E 3 & 7 oooa'ì'ì? 513 IGBT • 600 VOLT, F-SERIES MODULES • Low saturation voltage Device VCES Pc VcE sat R th RTH VF W Per IGBT Max. lc ton toff tf IGBT Diòde Max. Max. Am ps W atts V olts Am ps jjse c. usee. usee. °C/W °C/W Volts usee. 600 600


    OCR Scan     		PDF 2MBI50F-060 2MBI75F-060 2MBI100F-060 2MBI150F-060 2MBI200F-060 2MBI300F-060 2MB1200LB-060 2MBI300L-060 2MBI300LB-060 2MBI400L-060 2mb1200 M-219 m219 1MBI300F-060 2mbi200f

    IGBT EQUIVALENT

    Abstract: SC20P 402-12 SC26P
    Text: CAPACITORS FOR POWER ELECTRONICS Snubber Capacitors & Modules SM series Module for IGBT equivalent circuit SM 04 * Low -inductance & high-Q * Easy connecting Type IGBT [VCES] Diode [VRRM /lo/trr] Cap 600/150 600/10/0.05 1.5 *P [A] W H T 450/600 75 45.5 31.5


    OCR Scan     		PDF SC20P SC40P SC79P SC19P SC12P IGBT EQUIVALENT 402-12 SC26P

    Untitled

    Abstract: No abstract text available
    Text: ^C25 VCE sat 20 A 20 A 2.5 V 3.0 V VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGA/IXGH 10N60U1 600 V IXGA/IXGH 10 N60AU1 600 V Combi Packs Preliminary data Symbol Test Conditions V« Td = 25°C to 150°C 600 V VCGR ^ 600 V VGES Continuous


    OCR Scan     		PDF 10N60U1 N60AU1 4bflb22b GD0223Ã 10N60AU1 D94006DE,

    Untitled

    Abstract: No abstract text available
    Text: IGBT IGBT: INS. GATE BIPOLAR TRANSISTOR PACKAGE TO-257 % TO-254 0 j/c * °c/w 570 750 2.0 3.1 310 750 2.0 31 2.0 800 1500 1.25 24 2.9 100 1500 1.25 bvces SNG30620 600 20 2.6 SNG30620A 600 20 600 SNG20640 VOLTS ^ies * pf DEVICE TYPE fC cont AMPS VCE (sat)


    OCR Scan     		PDF O-257 O-254 SNG30620 SNG30620A SNG20640 SNG20648A SNG40635 SNG40648A SNG40660A SNG40675