Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MHPM2A400A60M/D SEMICONDUCTOR TECHNICAL DATA MHPM2A400A60M Preliminary Data Sheet Hybrid Power Module High Current IGBT Module 400 AMP, 600 VOLT HYBRID POWER MODULE • 400 Amp, 600 Volt IGBT Half–Bridge • Low On–Voltage, High Speed IGBTs
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MHPM2A400A60M/D
MHPM2A400A60M
MHPM2A400A60M/D*
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NT 407 F TRANSISTOR TO 220
Abstract: MOTOROLA TRANSISTOR T2 NT 407 F MOSFET TRANSISTOR MGP20N40CL 632 transistor motorola mosfet ignition coil NT 407 F TRANSISTOR
Text: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT VCE on = 1.8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)
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MGP20N40CL/D
MGP20N40CL
NT 407 F TRANSISTOR TO 220
MOTOROLA TRANSISTOR T2
NT 407 F MOSFET TRANSISTOR
MGP20N40CL
632 transistor motorola
mosfet ignition coil
NT 407 F TRANSISTOR
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MGP20N40CL
Abstract: NT 407 F power transistor NT 407 F TRANSISTOR TO 220
Text: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)
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MGP20N40CL/D
MGP20N40CL
MGP20N40CL
NT 407 F power transistor
NT 407 F TRANSISTOR TO 220
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MGP20N40CL
Abstract: NT 407 F TRANSISTOR TO 220 MGP20N40CL-D
Text: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)
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MGP20N40CL/D
MGP20N40CL
MGP20N40CL/D*
MGP20N40CL
NT 407 F TRANSISTOR TO 220
MGP20N40CL-D
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B8204
Abstract: NGB8204N NGB8204NT4
Text: NGB8204N Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses
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NGB8204N
NGB8204N/D
B8204
NGB8204N
NGB8204NT4
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8201NG
Abstract: 8201n NGD 8201NG NGD8201NG NGD8201N NGD8201NT4 NGD8201NT4G
Text: NGD8201N Ignition IGBT 20 Amp, 400 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses
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NGD8201N
NGD8201N/D
8201NG
8201n
NGD 8201NG
NGD8201NG
NGD8201N
NGD8201NT4
NGD8201NT4G
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8204NG
Abstract: GB8204N NGB8204N NGB8204NT4 NGB8204NT4G
Text: NGB8204N Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses
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NGB8204N
NGB8204N/D
8204NG
GB8204N
NGB8204N
NGB8204NT4
NGB8204NT4G
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8201NG
Abstract: NGD 8201NG NGD8201NG 8201n NGD8201NT4G NGD8201N NGD8201NT4
Text: NGD8201N Ignition IGBT 20 Amp, 400 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses
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NGD8201N
NGD8201N/D
8201NG
NGD 8201NG
NGD8201NG
8201n
NGD8201NT4G
NGD8201N
NGD8201NT4
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8204NG
Abstract: GB8204 NGB8204N NGB8204NT4 NGB8204NT4G GB8204NG
Text: NGB8204N Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses
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NGB8204N
NGB8204N/D
8204NG
GB8204
NGB8204N
NGB8204NT4
NGB8204NT4G
GB8204NG
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0005P
Abstract: 350VVGE
Text: NGB8204N Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses
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NGB8204N
NGB8204N/D
0005P
350VVGE
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18n40b
Abstract: GB18N40B NGB18N40CLB NGB18N40CLBT4 NGB18N40CLBT4/D
Text: NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses
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NGB18N40CLBT4
NGB18N40CLB/D
18n40b
GB18N40B
NGB18N40CLB
NGB18N40CLBT4
NGB18N40CLBT4/D
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N40B
Abstract: G18N40B g18n40
Text: NGD18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses
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NGD18N40CLBT4
NGD18N40CLB/D
N40B
G18N40B
g18n40
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G18N40B
Abstract: N40B NGD18N40CLBT4 NGD18N40CLB aac marking g18n40
Text: NGD18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses
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NGD18N40CLBT4
NGD18N40CLB/D
G18N40B
N40B
NGD18N40CLBT4
NGD18N40CLB
aac marking
g18n40
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Untitled
Abstract: No abstract text available
Text: NGB8204N, NGB8204AN Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses
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NGB8204N,
NGB8204AN
NGB8204N/D
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N40BG
Abstract: G18N40bg G18N40B g18n40 G18 N40BG N40B
Text: NGD18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses
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NGD18N40CLBT4
NGD18N40CLB/D
N40BG
G18N40bg
G18N40B
g18n40
G18 N40BG
N40B
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18n40b
Abstract: GB18N40B
Text: NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses
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NGB18N40CLBT4
NGB18N40CLB/D
18n40b
GB18N40B
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N40BG
Abstract: G18N40bg G18N40B NGD18N40CLBT4G N40B G18 N40BG NGD18N40CLB NGD18N40CLBT4
Text: NGD18N40CLB Ignition IGBT 18 Amps, 400 Volts N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses
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NGD18N40CLB
NGD18N40CLB/D
N40BG
G18N40bg
G18N40B
NGD18N40CLBT4G
N40B
G18 N40BG
NGD18N40CLB
NGD18N40CLBT4
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NGD8201ANT4G
Abstract: NGD8201AN NGD8201N NGD8201NT4G NGD8201A ignition IGBT
Text: NGD8201N, NGD8201AN Ignition IGBT 20 Amp, 400 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses
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NGD8201N,
NGD8201AN
NGD8201N/D
NGD8201ANT4G
NGD8201AN
NGD8201N
NGD8201NT4G
NGD8201A
ignition IGBT
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G18N40B
Abstract: N40B ignition IGBT g18n40
Text: NGD18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses
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NGD18N40CLBT4
NGD18N40CLBT4
G18N40B
N40B
ignition IGBT
g18n40
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18n40b
Abstract: GB18N40B GB18N40 ignition IGBT NGB18N40CLBT4
Text: NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses
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NGB18N40CLBT4
NGB18N40CLBT4
18n40b
GB18N40B
GB18N40
ignition IGBT
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18n40b
Abstract: GB18N40B GB18N40
Text: NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses
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NGB18N40CLBT4
NGB18N40CLB/D
18n40b
GB18N40B
GB18N40
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7MB150N-120
Abstract: 7MB140N-120 IGBT 400 amp IGBT 50 amp 1200 volt p607 150 VOLT 12 AMP diode 7MBR15NF120 7mbr25nf120 2MBI75N-120 7MBR10NF120
Text: • 22 3 fl7T e O O O B ^ b bô? <s ■ THIRD GENERATION IGBT 1200 VOLT, N-SERIES SINGLE MODULES • 200 - 600 Amp Device VCES. Type lc Pc Cont. P er IGBT Volts A m ps 200 1200 1200 300 1200 300 1200 300 1200 400 1200 : 400 400 1200 1200 600 1MBI200N-120 1MBI300N-120
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1MBI200N-120
NI127
1MBI300N-120
1MBI300NN-120
1MBI300NP-120
1MBI400N-120
M127mps
7MBI40N-120
7MBI50N-120
7MBR10NF120
7MB150N-120
7MB140N-120
IGBT 400 amp
IGBT 50 amp 1200 volt
p607
150 VOLT 12 AMP diode
7MBR15NF120
7mbr25nf120
2MBI75N-120
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GP20N
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advanced Information SMARTDISCRETES Internally Clamped, N-Cltannel IGBT MGP20N40CL 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT VCE on = 1-8 VOLTS 400 VOLTS (CLAMPED) T his Logic Level Insulated G ate Bipolar Transistor (IGBT)
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OCR Scan
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MGP20N40CL
21A-09
O-220AB
GP20N
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GP20N40CL
Abstract: transistor tl 430 c
Text: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information M GP20N40CL SMARTDISCRETES In tern ally Clam ped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT VCE on = 1-8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)
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MGP20N40CL/D
GP20N40CL
21A-09
GP20N40CL
transistor tl 430 c
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