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    IGBT 300V 30A DATASHEET Search Results

    IGBT 300V 30A DATASHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT30N135SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1350 V, 30 A, Built-in Diodes, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J65MRB Toshiba Electronic Devices & Storage Corporation IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 300V 30A DATASHEET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FGPF30N30

    Abstract: No abstract text available
    Text: FGPF30N30 300V, 30A PDP IGBT Features General Description • High Current Capability Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF30N30 offers the optimum solution for PDP applications where low-condution


    Original     		FGPF30N30 FGPF30N30 O-220F PDF

    C1220A

    Abstract: igbt 300V 10A datasheet FGPF30N30
    Text: FGPF30N30 300V, 30A PDP IGBT Features General Description • High Current Capability Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF30N30 offers the optimum solution for PDP applications where low-condution


    Original     		FGPF30N30 FGPF30N30 O-220F 100oC C1220A igbt 300V 10A datasheet PDF

    igbt 300V 10A datasheet

    Abstract: igbt 200v 20a FGFP30N30DTU FGPF30N30D RG601 igbt 200v 30a
    Text: FGPF30N30D 300V, 30A PDP IGBT Features General Description • High Current Capability Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF30N30D offers the optimum solution for PDP applications where lowcondution loss is essential.


    Original     		FGPF30N30D O-220F igbt 300V 10A datasheet igbt 200v 20a FGFP30N30DTU FGPF30N30D RG601 igbt 200v 30a PDF

    igbt 300V 10A datasheet

    Abstract: FGPF30N30TTU
    Text: FGPF30N30T tm 300V, 30A PDP Trench IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.


    Original     		FGPF30N30T O-220F FGPF30N30T igbt 300V 10A datasheet FGPF30N30TTU PDF

    igbt 300V 30A

    Abstract: igbt 300V 10A datasheet FGPF30N30TD igbt 200v 20a
    Text: FGPF30N30TD tm 300V, 30A PDP Trench IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.


    Original     		FGPF30N30TD O-220F FGPF30N30TD igbt 300V 30A igbt 300V 10A datasheet igbt 200v 20a PDF

    Untitled

    Abstract: No abstract text available
    Text: FGPF50N30T tm 300V, 50A PDP IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =1.4V @ IC = 30A • High input impedance Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.


    Original     		FGPF50N30T O-220F FGPF50N30T PDF

    igbt 200v 30a

    Abstract: FGPF50N30T FGPF50N30TTU
    Text: FGPF50N30T tm 300V, 50A PDP IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.


    Original     		FGPF50N30T O-220F FGPF50N30T igbt 200v 30a FGPF50N30TTU PDF

    SME6G30US60

    Abstract: APPLICATION NOTES IGBT
    Text: Preliminary SME6G30US60 COMPACT IGBT MODULE FEATURES * High Speed Switching * Low Conduction Loss : VCE sat = 2.0 V (typ) * Fast & Soft Anti-Parallel FWD * Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS * General Purpose Inverters * UPS, CVCF * Robotics , Servo Controls


    Original     		SME6G30US60 17-PM-CA SME6G30US60 APPLICATION NOTES IGBT PDF

    Untitled

    Abstract: No abstract text available
    Text: CO-PAK IGBT SGL30N60RUFD FEATURES TO-264 * Short Circuit rated 10uS @Tc=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ Ic=30A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50nS (Typ) C APPLICATIONS * AC & DC Motor controls


    Original     		SGL30N60RUFD O-264 PDF

    SGH30N60RUFD

    Abstract: No abstract text available
    Text: CO-PAK IGBT SGH30N60RUFD FEATURES TO-3P * Short Circuit rated 10µs @TC=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ IC=30A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50ns (Typ) C APPLICATIONS * AC & DC Motor controls


    Original     		SGH30N60RUFD 25duct SGH30N60RUFD PDF

    Untitled

    Abstract: No abstract text available
    Text: CO-PAK IGBT SGF30N60RUFD FEATURES TO-3PF * Short Circuit rated 10µs @TC=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ IC=30A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50ns (Typ) C APPLICATIONS * AC & DC Motor controls


    Original     		SGF30N60RUFD PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SME6G30US60 COMPACT IGBT MODULE FEATURES * High Speed Switching * Low Conduction Loss : VCE sat = 2.0 V (typ) * Fast & Soft Anti-Parallel FWD * Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS * General Purpose Inverters * UPS, CVCF * Robotics , Servo Controls


    Original     		SME6G30US60 17-PM-CA PDF

    SGF30N60RUFD

    Abstract: No abstract text available
    Text: CO-PAK IGBT SGF30N60RUFD FEATURES TO-3PF * Short Circuit rated 10µs @TC=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ IC=30A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50ns (Typ) C APPLICATIONS * AC & DC Motor controls


    Original     		SGF30N60RUFD SGF30N60RUFD PDF

    SGL30N60RUFD

    Abstract: No abstract text available
    Text: CO-PAK IGBT SGL30N60RUFD FEATURES TO-264 * Short Circuit rated 10uS @Tc=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ Ic=30A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50nS (Typ) C APPLICATIONS * AC & DC Motor controls


    Original     		SGL30N60RUFD O-264 SGL30N60RUFD PDF

    smps igbt

    Abstract: FFH30US30S igbt 150v 30a
    Text: FGH50N3 300 V SMPS IGBT April 2013 FGH50N3 300 V SMPS IGBT General Description Features Using Fairchild 's planar technology, this IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This


    Original     		FGH50N3 FGH50N3 O-247 IC110 smps igbt FFH30US30S igbt 150v 30a PDF

    gv 275 diode

    Abstract: SMC7G30US60
    Text: Preliminary SMC7G30US60 COMPACT & COMPLEX MODULE FEATURES * High Speed Switching * Low Saturation Voltage @ VCE sat = 2.0 V (typ) * High Input Impedance * Short Circuit Min. 10uS Rated @ VCC=300V, VGE=15V, TC=100°C * Built in Brake & 3 φ Rectifier Circuit


    Original     		SMC7G30US60 21-PM-BA gv 275 diode SMC7G30US60 PDF

    OF IGBT

    Abstract: SMC7G30US60 Fast Recovery Rectifier, 300V
    Text: Preliminary SMC7G30US60 COMPACT & COMPLEX MODULE FEATURES * High Speed Switching * Low Saturation Voltage @ VCE sat = 2.0 V (typ) * High Input Impedance * Short Circuit Min. 10uS Rated @ VCC=300V, VGE=15V, TC=100°C * Built in Brake & 3 φ Rectifier Circuit


    Original     		SMC7G30US60 21-PM-BA OF IGBT SMC7G30US60 Fast Recovery Rectifier, 300V PDF

    SMC6G30US60

    Abstract: No abstract text available
    Text: Preliminary SMC6G30US60 COMPACT & COMPLEX MODULE FEATURES * High Speed Switching * Low Saturation Voltage @ VCE sat = 2.0 V (typ) * High Input Impedance * Short Circuit Min. 10uS Rated @ VCC=300V, VGE=15V, TC=100 * Built in 3 Rectifier Circuit & k Package code : 21-PM-BA


    Original     		SMC6G30US60 21-PM-BA SMC6G30US60 PDF

    SME6G30US60

    Abstract: No abstract text available
    Text: Preliminary SME6G30US60 COMPACT IGBT MODULE FEATURES * High Speed Switching * Low Conduction Loss : VCE sat = 2.0 V (typ) * Fast & Soft Anti-Parallel FWD * Short circuit rated : Min 10uS atTc=100°C APPLICATIONS * * * * Package code : 17-PM-CA General Purpose Inverters


    OCR Scan     		SME6G30US60 17-PM-CA SME6G30US60 PDF

    FGPF90N30

    Abstract: FGFP90N30TU
    Text: FGPF90N30 tm 300V, 90A PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF90N30 offers the optimum solution for PDP applications where low-condution


    Original     		FGPF90N30 FGPF90N30 O-220F FGFP90N30TU PDF

    SGH30N60RUFD

    Abstract: RUFD
    Text: IGBT SGH30N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT RUFD series provides low conduction and switching losses as well as short circuit ruggedness. RUFD series is designed for the applications such as motor control, UPS and general


    Original     		SGH30N60RUFD SGH30N60RUFD RUFD PDF

    SGH30N60RUF

    Abstract: Transistor GE 67
    Text: IGBT SGH30N60RUF Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT RUF series provides low conduction and switching losses as well as short circuit ruggedness. RUF series is designed for the applications such as motor control, UPS and general


    Original     		SGH30N60RUF SGH30N60RUF Transistor GE 67 PDF

    FMC7G30US60

    Abstract: No abstract text available
    Text: IGBT FMC7G30US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power


    Original     		FMC7G30US60 E209204 21PM-BA FMC7G30US60 PDF

    4830A

    Abstract: No abstract text available
    Text: SGH30N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control,


    Original     		SGH30N60RUFD SGH30N60RUFD SGH30N60RUFDTU AN-9017: AN-9017 4830A PDF