G20N50c
Abstract: g20n50c1d g20n50 g20N50c1 HGTG20N50 HGTG20N50C1D 20A igbt IGBT Drivers Transistors ACT10 AN7254
Text: HGTG20N50C1D 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance
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HGTG20N50C1D
O-247
500ns
150oC.
G20N50c
g20n50c1d
g20n50
g20N50c1
HGTG20N50
HGTG20N50C1D
20A igbt
IGBT Drivers Transistors
ACT10
AN7254
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G20N50c
Abstract: g20n50c1d mosfet 20a 300v g20n50 ic tb 810 datasheet HGTG20N50C1D g20N50c1 HGTG20N50 20A igbt an7254
Text: HGTG20N50C1D S E M I C O N D U C T O R 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE
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HGTG20N50C1D
O-247
500ns
150oC.
AN7254
AN7260)
150oC
100oC
G20N50c
g20n50c1d
mosfet 20a 300v
g20n50
ic tb 810 datasheet
HGTG20N50C1D
g20N50c1
HGTG20N50
20A igbt
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Untitled
Abstract: No abstract text available
Text: PD - 94545C IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 20A, TC=100°C
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94545C
IRGB8B60K
IRGS8B60K
IRGSL8B60K
O-220AB
O-262
AN-994.
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PDF
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C-150
Abstract: IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K TO-220AB transistor package 11mH
Text: PD - 94545C IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 20A, TC=100°C
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94545C
IRGB8B60K
IRGS8B60K
IRGSL8B60K
O-220AB
O-262
O-220AB
C-150
IRF1010
IRF530S
IRGB8B60K
IRGS8B60K
IRGSL8B60K
TO-220AB transistor package
11mH
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PDF
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C-150
Abstract: IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K
Text: PD - 94545C IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 20A, TC=100°C
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Original
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94545C
IRGB8B60K
IRGS8B60K
IRGSL8B60K
O-220AB
O-262
AN-994.
C-150
IRF1010
IRF530S
IRGB8B60K
IRGS8B60K
IRGSL8B60K
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Untitled
Abstract: No abstract text available
Text: FOD3120 High Noise Immunity, 2.5A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 35kV/µs The FOD3120 is a 2.5A Output Current Gate Drive Optocoupler, capable of driving most 1200V/20A IGBT/MOSFET. It is ideally suited for fast switching
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FOD3120
35kV/Â
FOD3120
200V/20A
200V/20A
400ns
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PDF
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FOD3150
Abstract: fod3120 FOD3150 application note 5A optocoupler FOD3120SDV IGBT/MOSFET Gate Drive FOD3120S FOD3120SD FOD3120SV FOD3120V
Text: FOD3120 High Noise Immunity, 2.5A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 35kV/µs The FOD3120 is a 2.5A Output Current Gate Drive Optocoupler, capable of driving most 1200V/20A IGBT/MOSFET. It is ideally suited for fast switching
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FOD3120
FOD3120
200V/20A
200V/20A
400ns
100nsthout
FOD3150
FOD3150 application note
5A optocoupler
FOD3120SDV
IGBT/MOSFET Gate Drive
FOD3120S
FOD3120SD
FOD3120SV
FOD3120V
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A 3150 igbt driver
Abstract: FOD3120 30V 20A 10KHz power MOSFET FOD3150 IGBT/MOSFET Gate Drive 3150 optocoupler A 3150 opto IGBT Gate Drive Optocoupler induction heating circuits FOD3150SD
Text: FOD3150 High Noise Immunity, 1.0A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 20kV/µs The FOD3150 is a 1.0A Output Current Gate Drive Optocoupler, capable of driving most 800V/20A IGBT/MOSFET. It is ideally suited for fast switching
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FOD3150
FOD3150
00V/20A
500ns
300ns
A 3150 igbt driver
FOD3120
30V 20A 10KHz power MOSFET
IGBT/MOSFET Gate Drive
3150 optocoupler
A 3150 opto
IGBT Gate Drive Optocoupler
induction heating circuits
FOD3150SD
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PDF
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fod3120
Abstract: 1200v 20a IGBT fod3120 applications 20A igbt FOD3120TV FOD3120SD FOD3150 FOD3120SDV FOD3120V Gate Drive Optocoupler
Text: FOD3120 High Noise Immunity, 2.5A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 35kV/µs The FOD3120 is a 2.5A Output Current Gate Drive Optocoupler, capable of driving most 1200V/20A IGBT/MOSFET. It is ideally suited for fast switching
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FOD3120
FOD3120
200V/20A
200V/20A
400ns
100nsthout
1200v 20a IGBT
fod3120 applications
20A igbt
FOD3120TV
FOD3120SD
FOD3150
FOD3120SDV
FOD3120V
Gate Drive Optocoupler
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PDF
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FOD3150 application note
Abstract: No abstract text available
Text: FOD3150 High Noise Immunity, 1.0A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 20kV/µs The FOD3150 is a 1.0A Output Current Gate Drive Optocoupler, capable of driving most 800V/20A IGBT/MOSFET. It is ideally suited for fast switching
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FOD3150
20kV/Â
FOD3150
00V/20A
500ns
300ns
FOD3150 application note
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PDF
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FOD3120SD
Abstract: 3120 v IGBT DRIVER FOD3120 a 3120 pin diagram optocoupler FOD3120TV 20A igbt fod3120v fod3120 applications FOD3150 control motor dc 6v
Text: FOD3120 High Noise Immunity, 2.5A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 35kV/µs The FOD3120 is a 2.5A Output Current Gate Drive Optocoupler, capable of driving most 800V/20A IGBT/MOSFET. It is ideally suited for fast switching
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FOD3120
00V/20A
FOD3120SD
3120 v IGBT DRIVER
a 3120 pin diagram optocoupler
FOD3120TV
20A igbt
fod3120v
fod3120 applications
FOD3150
control motor dc 6v
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PDF
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FOD3150
Abstract: No abstract text available
Text: FOD3120 High Noise Immunity, 2.5A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 35kV/µs The FOD3120 is a 2.5A Output Current Gate Drive Optocoupler, capable of driving most 1200V/20A IGBT/MOSFET. It is ideally suited for fast switching
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FOD3120
200V/20A
FOD3150
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PDF
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FOD3150
Abstract: FOD3120 FOD3150SD IEC60747-5-2 Gate Drive Optocoupler
Text: FOD3150 High Noise Immunity, 1.0A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 20kV/µs The FOD3150 is a 1.0A Output Current Gate Drive Optocoupler, capable of driving most 800V/20A IGBT/MOSFET. It is ideally suited for fast switching
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FOD3150
FOD3150
00V/20A
500ns
300ns
10C/sec
FOD3120
FOD3150SD
IEC60747-5-2
Gate Drive Optocoupler
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PDF
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Untitled
Abstract: No abstract text available
Text: FOD3150 High Noise Immunity, 1.0A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 20kV/µs The FOD3150 is a 1.0A Output Current Gate Drive Optocoupler, capable of driving most 800V/20A IGBT/MOSFET. It is ideally suited for fast switching
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FOD3150
20kV/Â
FOD3150
00V/20A
500ns
300ns
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PDF
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FOD3150
Abstract: FOD312 FOD3150 application note FOD3120 PC 1335 fod3120 applications 30V 20A 10KHz power MOSFET FOD3150SD IEC60747-5-2 OPTOCOUPLER 15V
Text: FOD3150 High Noise Immunity, 1.0A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 20kV/µs The FOD3150 is a 1.0A Output Current Gate Drive Optocoupler, capable of driving most 800V/20A IGBT/MOSFET. It is ideally suited for fast switching
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FOD3150
FOD3150
00V/20A
500ns
300ns
FOD312
FOD3150 application note
FOD3120
PC 1335
fod3120 applications
30V 20A 10KHz power MOSFET
FOD3150SD
IEC60747-5-2
OPTOCOUPLER 15V
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pwm 18 pin
Abstract: No abstract text available
Text: PULSE WIDTH MODULATION AMPLIFIER SA08 HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • • IGBT OUTPUTS WIDE SUPPLY RANGE—16-500V 20A TO 100° C CASE 3 PROTECTION CIRCUITS SYNCHRONIZED OR EXTERNAL OSCILLATOR
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546-APEX
RANGE--16-500V
TE9493
SA08U
pwm 18 pin
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motor driver full bridge 20A
Abstract: h-bridge igbt pwm igbt capacitor charge pump 10KW MO-127 SA08 380v motor igbt
Text: PULSE WIDTH MODULATION AMPLIFIER SA08 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • IGBT OUTPUTS WIDE SUPPLY RANGE—16-500V 20A TO 100° C CASE 3 PROTECTION CIRCUITS SYNCHRONIZED OR EXTERNAL OSCILLATOR
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546-APEX
RANGE--16-500V
TE9493
SA08U
motor driver full bridge 20A
h-bridge igbt pwm
igbt capacitor charge pump
10KW
MO-127
SA08
380v motor igbt
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PDF
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Untitled
Abstract: No abstract text available
Text: PULSE WIDTH MODULATION AMPLIFIERS SA08 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • IGBT OUTPUTS WIDE SUPPLY RANGE—16-500V 20A TO 100° C CASE 3 PROTECTION CIRCUITS SYNCHRONIZED OR EXTERNAL OSCILLATOR
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546-APEX
RANGE--16-500V
TE9493
SA08U
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PDF
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Untitled
Abstract: No abstract text available
Text: PULSE WIDTH MODULATION AMPLIFIER SA08 HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • • IGBT OUTPUTS WIDE SUPPLY RANGE—16-500V 20A TO 100° C CASE 3 PROTECTION CIRCUITS SYNCHRONIZED OR EXTERNAL OSCILLATOR
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546-APEX
RANGE--16-500V
TE9493
SA08U
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PDF
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MO-127
Abstract: 10KW SA08 380v motor igbt
Text: PULSE WIDTH MODULATION AMPLIFIER SA08 HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • • IGBT OUTPUTS WIDE SUPPLY RANGE—16-500V 20A TO 100° C CASE 3 PROTECTION CIRCUITS SYNCHRONIZED OR EXTERNAL OSCILLATOR
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546-APEX
RANGE--16-500V
TE9493
SA08U
MO-127
10KW
SA08
380v motor igbt
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PDF
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10KW
Abstract: IN4148 MO-127 SA18 USA690-8601 IGBT application notes 10KW
Text: PULSE WIDTH MODULATION AMPLIFIER SA18 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • HALF BRIDGE IGBT OUTPUT WIDE SUPPLY RANGE—16-500V 20A TO 100° C CASE 3 PROTECTION CIRCUITS SYNCHRONIZED OR EXTERNAL OSCILLATOR
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546-APEX
RANGE--16-500V
TE9493
SA18U
10KW
IN4148
MO-127
SA18
USA690-8601
IGBT application notes 10KW
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PDF
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Untitled
Abstract: No abstract text available
Text: PULSE WIDTH MODULATION AMPLIFIER SA18 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • HALF BRIDGE IGBT OUTPUT WIDE SUPPLY RANGE—16-500V 20A TO 100° C CASE 3 PROTECTION CIRCUITS SYNCHRONIZED OR EXTERNAL OSCILLATOR
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546-APEX
RANGE--16-500V
TE9493
SA18U
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PDF
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PJ 969 diode
Abstract: G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V
Text: HGTG20N50C1D M o r r is 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A ,500V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time < 500ns • High Input Im pedance • Low Conduction Loss • With Anti-Parallel Diode
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OCR Scan
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500ns
HGTG20N50C1D
O-247
AN7254
AN7260)
PJ 969 diode
G20N50c
20N50C1D
pj 986 diode
F25 transistor
mosfet 20n
GE 639
pj 809
IGBT 500V 35A
igbt 20A 500V
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PDF
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PJ 969 diode
Abstract: DIODE 25PH 500 M302E71 pj 809 HGTG20N50C1D 08/bup 3110 transistor
Text: HARRIS SEMICOND SECTOR ffl j a r s 1 bêE D • Lt30SE71 00502Ö3 732 ■ H A S HGTG20N50C1D 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode December 1993 Package Features JEDEC STYLE TO-247 TOP VIEW • 20 Amp, 500 Volt • Latch Free Operation
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OCR Scan
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t30SE71
HGTG20N50C1D
O-247
500ns
AN7254
AN7260)
M302E71
QD50S67
PJ 969 diode
DIODE 25PH 500
pj 809
HGTG20N50C1D
08/bup 3110 transistor
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