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    IGBT 1700V Search Results

    IGBT 1700V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 1700V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information FD600R17KF6C_B2 IGBT-Module IGBT-modules 1700V IGBT Modul mit low loss IGBT der 2.ten Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode IGBT-Wechselrichter / IGBT-inverter


    Original     		PDF FD600R17KF6C

    55F32

    Abstract: FD1600 1200R ulw diode
    Text: Technische Information / technical information FD1600/1200R17KF6C_B2 IGBT-Module IGBT-modules 1700V IGBT Modul mit low loss IGBT der 2.ten Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode IGBT-Wechselrichter / IGBT-inverter


    Original     		PDF FD1600/1200R17KF6C 55F32 FD1600 1200R ulw diode

    IGBT FF 300

    Abstract: diode 1700v eupec igbt FF400R17KF6CB2 KF6C
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values


    Original     		PDF

    FF400R17KF6CB2

    Abstract: No abstract text available
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values


    Original     		PDF

    FZ800R17KF6CB2

    Abstract: KF6C
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values


    Original     		PDF

    FF400R17KF6CB2

    Abstract: IGBT FF 300 igbt ff 75 r
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values


    Original     		PDF FF400R17KF6CB2 FF400R17KF6CB2 IGBT FF 300 igbt ff 75 r

    FF400R17KF6CB2

    Abstract: No abstract text available
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values


    Original     		PDF

    eupec igbt

    Abstract: IGBT FZ 1800 FZ800R17KF6CB2 IGBT module FZ 1200 IGBT FZ 800
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values


    Original     		PDF

    IGBT module FZ 1200

    Abstract: KF6C FZ800R17KF6CB2
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values


    Original     		PDF FZ800R17KF6CB2 IGBT module FZ 1200 KF6C FZ800R17KF6CB2

    diode 1700v

    Abstract: FZ800R17KF6CB2
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values


    Original     		PDF

    kpb 307

    Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


    Original     		PDF DS5766-4. kpb 307 KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor

    DCR370T

    Abstract: DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half bridges and single switches


    Original     		PDF 4500Vee DS5766-4. DCR370T DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34

    Tag 225-600

    Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


    Original     		PDF DS5766-4. Tag 225-600 IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes

    DCR2950W

    Abstract: K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


    Original     		PDF DS5766-4. DCR2950W K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A

    Untitled

    Abstract: No abstract text available
    Text: APPLIED POWER SYSTEMS, INC. IAP1000D170H - SixPac 1000A / 1700V Half-Bridge IGBT Inverter IAP1000D170H - Half-Bridge SixPac™ IGBT Integrated Assembly Air Cooled Liquid Cooled Features: Description: The SixPacTM from Applied Power Systems is a configurable IGBT based power stage that is


    Original     		PDF IAP1000D170H IAP1000D170 IAP1000D170s

    Untitled

    Abstract: No abstract text available
    Text: Spec.No.IGBT-SP-06038R1 P1 IGBT MODULE MBN1200E17E Silicon N-channel IGBT 1700V E version 1. FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT. ∗ Low driving power: Low input capacitance advanced trench gate.


    Original     		PDF IGBT-SP-06038R1 MBN1200E17E 000cycles) MBN1200E17E

    mbm600

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-07034 R1 MBM600E17E TARGET SPEC. Silicon N-channel IGBT 1700V E version OUTLINE DRAWING Unit in mm FEATURES * Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT. * Low driving power: Low input capacitance


    Original     		PDF IGBT-SP-07034 MBM600E17E 000cycles) mbm600

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-12021R0 MBM1200E17F Target Specification Silicon N-channel IGBT 1700V F version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT. ∗ Low driving power: Low input capacitance advanced trench gate.


    Original     		PDF IGBT-SP-12021R0 MBM1200E17F

    MBN3600E17F

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-10024 R0 MBN3600E17F Preliminary Specification Silicon N-channel IGBT 1700V F version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT.  Low driving power: Low input capacitance advanced trench gate.


    Original     		PDF IGBT-SP-10024 MBN3600E17F MBN3600E17F

    IC1 723

    Abstract: 1700V 723 ic internal diagram 501NM
    Text: Spec.No.IGBT-SP-06038R1 P1 IGBT MODULE MBN1200E17E Silicon N-channel IGBT 1700V E version 1. FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT. ∗ Low driving power: Low input capacitance advanced trench gate.


    Original     		PDF IGBT-SP-06038R1 MBN1200E17E 000cycles) IC1 723 1700V 723 ic internal diagram 501NM

    IC-80

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-07033 R3 MBM800E17E Preliminary SPEC. Silicon N-channel IGBT 1700V E version OUTLINE DRAWING Unit in mm FEATURES * Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT. * Low driving power: Low input capacitance


    Original     		PDF IGBT-SP-07033 MBM800E17E 000cycles) IC-80

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-12013 R0 MBM800E17F Target Specification Silicon N-channel IGBT 1700V F version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT. ∗ Low driving power: Low input capacitance advanced trench gate.


    Original     		PDF IGBT-SP-12013 MBM800E17F MBM80rt,

    MBN3600E17F

    Abstract: Hitachi DSA00281
    Text: IGBT MODULE Spec.No.IGBT-SP-10024 R0 MBN3600E17F Preliminary Specification Silicon N-channel IGBT 1700V F version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT. ∗ Low driving power: Low input capacitance advanced trench gate.


    Original     		PDF IGBT-SP-10024 MBN3600E17F MBN3600E17F Hitachi DSA00281

    MBM1200E17F

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-12021R0 MBM1200E17F Target Specification Silicon N-channel IGBT 1700V F version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT. ∗ Low driving power: Low input capacitance advanced trench gate.


    Original     		PDF IGBT-SP-12021R0 MBM1200E17F MBM1200E17F