bsm 50 Gb 120 IGBT
Abstract: C67070-A2701-A67
Text: BSM 50 GB 170 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = 27 Ohm Type VCE BSM 50 GB 170 DN2 1700V 72A IC Package Ordering Code HALF-BRIDGE 1 C67070-A2701-A67 Maximum Ratings
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C67070-A2701-A67
bsm 50 Gb 120 IGBT
C67070-A2701-A67
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APT0406
Abstract: APT0502
Text: APTGT30DA170T1G Boost chopper Trench + Field Stop IGBT Power Module 5 6 VCES = 1700V IC = 30A @ Tc = 80°C Application 11 • • • CR1 Features 3 4 Q2 NTC • CR2 9 10 1 2 AC and DC motor control Switched Mode Power Supplies Power Factor Correction 12
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APTGT30DA170T1G
APT0406
APT0502
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CM300DY-34A
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM300DY-34A HIGH POWER SWITCHING USE CM300DY-34A ¡IC . 300A ¡VCES . 1700V ¡Insulated Type ¡2-elements in a pack
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CM300DY-34A
200GE
043K/W
CM300DY-34A
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APT0502
Abstract: No abstract text available
Text: APTGT300SK170D3G Buck Chopper Trench + Field Stop IGBT Power Module VCES = 1700V IC = 300A @ Tc = 80°C Application Q1 3 • • 4 5 AC and DC motor control Switched Mode Power Supplies Features 1 • Trench + Field Stop IGBT Technology - Low voltage drop
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APTGT300SK170D3G
APT0502
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CM75DY-34A
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM75DY-34A HIGH POWER SWITCHING USE CM75DY-34A ¡IC . 75A ¡VCES . 1700V ¡Insulated Type ¡2-elements in a pack
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CM75DY-34A
16K/W
CM75DY-34A
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rg45
Abstract: APT0502 APTGT300U170D4G
Text: APTGT300U170D4G Single switch Trench + Field Stop IGBT Power Module VCES = 1700V IC = 300A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 1 3 Features • Trench + Field Stop IGBT Technology
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APTGT300U170D4G
rg45
APT0502
APTGT300U170D4G
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diode 1700v
Abstract: eupec igbt DIODE i2t DD400S17K6CB2 b2 diode DIODE B2 igbtmodules emcon diode
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules DD 400 S 17 K6C B2 1700V Dual Dioden Modul mit softer EmCon Diode 1700V Dual Diode Module with soft EmCon Diode Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung
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Eupec Power Semiconductors
Abstract: ga 25 diode VR25
Text: BYM 300 A 170 DN2 Diode Power Module • Inside fast free-wheeling diode • Package with insulated metal base plate • Diode especially for brake choppers • matched with BSM 300 GA 170 DN 2 Type VR25 IFDC BYM 300 A 170 DN2 1700V 380A Package Ordering Code
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C67070-A2901-A67
Eupec Power Semiconductors
ga 25 diode
VR25
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800VHZ41
Abstract: No abstract text available
Text: TOSHIBA FAST RECOVERY DIODE 800VHZ41 Unit in mm Silicon Diffused Type High Power Applications • The Electrodes are Isolated from Case. • Average Forward Current : IF AV = 800A • Peak Repetitive Reverse Voltage : VRRM = 1700V Equivalent Circuit d Q- H-° &
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800VHZ41
PW04570796
002170b
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APT0502
Abstract: APT0601 APTGT225DA170G
Text: APTGT225DA170G Boost chopper Trench + Field Stop IGBT Power Module VCES = 1700V IC = 225A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction VBUS CR1 Features • Trench + Field Stop IGBT® Technology
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APTGT225DA170G
APT0502
APT0601
APTGT225DA170G
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APT0502
Abstract: APTDF400AA170G
Text: APTDF400AA170G Dual Common Anode diodes Power Module VRRM = 1700V IC = 400A @ Tc = 55°C Application K1 • • • • A Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers Features • • • • • • K2 • Ultra fast recovery times
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APTDF400AA170G
rating400
APT0502
APTDF400AA170G
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CM1200HCB-34N
Abstract: TRANSISTOR JC 515 transistor 2955
Text: MITSUBISHI HVIGBT MODULES CM1200HCB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM1200HCB-34N ● IC . 1200A ● VCES . 1700V
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CM1200HCB-34N
CM1200HCB-34N
TRANSISTOR JC 515
transistor 2955
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IGD515EI
Abstract: IGBT Power Module siemens ag FS450R17KE3 FF400R17KE3 igbt 1200v 150a trench field stop ECONOPACK FF800R17KE3 FF300R17KE3 FZ3600R17KE3 FZ400R17KE3
Text: 1700V Trench IGBT Modules * R. Mallwitz, R. Tschirbs , M. Pfaffenlehner, A. Mauder (*) (*) (*) (*) , C. Schaeffer (*) eupec GmbH, Max-Planck Straße 5, D-59581 Warstein-Belecke Infineon Technologies AG, Balanstraße 73, D-81541 Munich Infineon Technologies AG, Siemensstraße 2, A-9500 Villach
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D-59581
D-81541
IGD515EI
IGBT Power Module siemens ag
FS450R17KE3
FF400R17KE3
igbt 1200v 150a trench field stop
ECONOPACK
FF800R17KE3
FF300R17KE3
FZ3600R17KE3
FZ400R17KE3
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Untitled
Abstract: No abstract text available
Text: FJAF6916 FJAF6916 High Voltage Color Display Horizontal Deflection Output • High Collector-Base Breakdown Voltage : BVCBO = 1700V • Low Saturation Voltage : VCE sat = 3V (Max.) • For Color Monitor TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor
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FJAF6916
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OPA2658
Abstract: No abstract text available
Text: Dual Wideband, Low Power, Current Feedback OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • UNITY GAIN STABLE BANDWIDTH: 800MHz • LOW POWER: 50mW/Chan. • LOW DIFFERENTIAL GAIN/PHASE ERRORS: 0.01%/0.03° • HIGH SLEW RATE: 1700V/ps • PACKAGE: 8-Pin DIP, SO-8 and MSOP-8
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800MHz
50mW/Chan.
700V/ps
OPA2658
OPA2658
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Untitled
Abstract: No abstract text available
Text: OPA622 B U R R -B R O W N | M | Wide-Bandwidth OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LARGE SIGNAL BANDWIDTH: 150MHz (AP , 200MHz (AU) • BROADCAST/HDTV EQUIPMENT • HIGH OUTPUT CURRENT: ±70mA • COMMUNICATIONS • PULSE/RF AMPLIFIERS • SLEW RATE: 1500V/|as (AP), 1700V/(is (AU)
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OPA622
150MHz
200MHz
200MHz/5mA
OPA622
in622-1GC.
OPA622AP)
OPA622AU)
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Untitled
Abstract: No abstract text available
Text: APTDF400AA170G Dual Common Anode diodes Power Module VRRM = 1700V IC = 400A @ Tc = 55°C Application K1 • A Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers Features K2 Ultra fast recovery times
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APTDF400AA170G
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Untitled
Abstract: No abstract text available
Text: APTGT200DA170D3G Boost chopper Trench + Field Stop IGBT3 Power Module 3 Q2 1 6 7 2 VCES = 1700V IC = 200A @ Tc = 80°C Application • AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features Trench + Field Stop IGBT3 Technology
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APTGT200DA170D3G
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Untitled
Abstract: No abstract text available
Text: APTDF400AK170G Diode Phase leg Power Module VRRM = 1700V IC = 400A @ Tc = 55°C Application K1 • A1/K2 Anti-Parallel diode Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers Features
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APTDF400AK170G
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Untitled
Abstract: No abstract text available
Text: APTGT225DA170G Boost chopper Trench + Field Stop IGBT3 Power Module VCES = 1700V IC = 225A @ Tc = 80°C Application • AC and DC motor control Switched Mode Power Supplies Power Factor Correction VBUS CR1 Features Trench + Field Stop IGBT3 Technology
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APTGT225DA170G
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Untitled
Abstract: No abstract text available
Text: APTGT50SK170TG Buck chopper Trench + Field Stop IGBT3 Power Module VBUS VCES = 1700V IC = 50A @ Tc = 80°C Application • AC and DC motor control Switched Mode Power Supplies NTC2 Q1 G1 Features Trench + Field Stop IGBT3 Technology - Low voltage drop
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APTGT50SK170TG
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Untitled
Abstract: No abstract text available
Text: APTGT225A170G Phase leg Trench + Field Stop IGBT3 Power Module VCES = 1700V IC = 225A @ Tc = 80°C Application • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control VBUS Q1 G1 E1 OUT Features Trench + Field Stop IGBT3 Technology
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APTGT225A170G
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Untitled
Abstract: No abstract text available
Text: APTMC170AM60CT1AG VDSS = 1700V RDSon = 60mΩ max @ Tj = 25°C ID = 53A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET
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APTMC170AM60CT1AG
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PER12
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM600DY-34H HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM600DY-34H ● IC . 600A ● VCES . 1700V
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CM600DY-34H
PER12
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