A 3150V
Abstract: HIGH VOLTAGE DIODE 3.3kv 3150v IGBT 3kv Measurement of stray inductance for IGBT FZ1200R33KF1 scsoa IC A 3150V eupec igbt 3.3kv dc motor speed control circuit diagram with IGBT
Text: Improved Characteristics of 3.3kV IGBT Modules M.Hierholzer, R.Bayerer, eupec GmbH & Co KG, Warstein, Germany A.Porst, H.Brunner, Siemens AG, München, Germany 3.3kV IGBT modules are available on the market since beginning of 1996. In most applications the IGBT
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500Hz-1000Hz
A 3150V
HIGH VOLTAGE DIODE 3.3kv
3150v
IGBT 3kv
Measurement of stray inductance for IGBT
FZ1200R33KF1
scsoa
IC A 3150V
eupec igbt 3.3kv
dc motor speed control circuit diagram with IGBT
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-08006 R3 MBN1000E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. Low driving power due to low input capacitance MOS gate.
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IGBT-SP-08006
MBN1000E33E2
000cycles)
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C 4977
Abstract: ON 4977 3 phase IGBT gate driver 1200 3 phase IGBT gate driver 4977 IGBT gate driver ic DS34C87 SPM6G140-060D OF IGBT
Text: SENSITRON SEMICONDUCTOR SPM6G140-060D TECHNICAL DATA Data Sheet 4977 Rev. - Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G140-060D
C 4977
ON 4977
3 phase IGBT gate driver 1200
3 phase IGBT gate driver
4977
IGBT gate driver ic
DS34C87
SPM6G140-060D
OF IGBT
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4100 data sheet
Abstract: IGBT gate driver ic 210C DS34C87 SFH6186-4 SPM6G120-120D
Text: SENSITRON SEMICONDUCTOR SPM6G120-120D TECHNICAL DATA Data Sheet 4100 Rev. B Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G120-120D
4100 data sheet
IGBT gate driver ic
210C
DS34C87
SFH6186-4
SPM6G120-120D
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driver igbt high side 1500V
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SPM6G120-120D TECHNICAL DATA Data Sheet 4100 REV.A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G120-120D
125oC
driver igbt high side 1500V
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C 4977
Abstract: ON 4977 SPM6G140-060D
Text: SENSITRON _ SEMICONDUCTOR SPM6G140-060D TECHNICAL DATA Data Sheet 4977 Rev. A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G140-060D
125oC
C 4977
ON 4977
SPM6G140-060D
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3 phase IGBT gate driver
Abstract: 3 phase IGBT gate driver 1200 4100 opto coupler high side IGBT driver IGBT gate driver ic opto-isolators current sensor DS34C87 SFH6186-4 SPM6G120-120D
Text: SENSITRON SEMICONDUCTOR SPM6G120-120D TECHNICAL DATA Data Sheet 4100 Rev. - Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G120-120D
3 phase IGBT gate driver
3 phase IGBT gate driver 1200
4100 opto coupler
high side IGBT driver
IGBT gate driver ic
opto-isolators current sensor
DS34C87
SFH6186-4
SPM6G120-120D
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-08006 R2 MBN1000E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.
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IGBT-SP-08006
MBN1000E33E2
000cycles)
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3 phase IGBT gate driver 1200
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SPM6G120-120D TECHNICAL DATA Data Sheet 4100 Rev. A.1 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G120-120D
125oC
3 phase IGBT gate driver 1200
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C 4977
Abstract: 50 amp igbt 210C DS34C87 SFH6186-4 SPM6G140-060D ON 4977
Text: SENSITRON _ SEMICONDUCTOR SPM6G140-060D TECHNICAL DATA Data Sheet 4977 Rev. A.1 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G140-060D
C 4977
50 amp igbt
210C
DS34C87
SFH6186-4
SPM6G140-060D
ON 4977
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R68 capacitor
Abstract: No abstract text available
Text: Medium Power Film Capacitors FSB GENERAL DESCRIPTION Metallized polypropylene dielectric capacitor with controlled self-healing. Reinforced metallization developed for high impulse currents. APPLICATIONS • IGBT protection • IGBT clamping PACKAGING PROTECTION
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2x10-4
R68 capacitor
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Untitled
Abstract: No abstract text available
Text: Medium Power Film Capacitors FSB RoHS Compliant GENERAL DESCRIPTION Metallized polypropylene dielectric capacitor with controlled self-healing. Reinforced metallization developed for high impulse currents. APPLICATIONS • IGBT protection • IGBT clamping
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850Vdc
1200Vdc
1600Vdc
2000Vdc
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calculation of IGBT snubber
Abstract: FSB56M0434JJC FSB66U0105K FSB66N0684K Polypropylene capacitor 700V 300 volt 5 ampere IGBT a 31 IGBT snubber
Text: Medium Power Film Capacitors FSB GENERAL DESCRIPTION Metallized polypropylene dielectric capacitor with controlled self-healing. Reinforced metallization developed for high impulse currents. APPLICATIONS • IGBT protection • IGBT clamping PACKAGING PROTECTION
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2x10-4
calculation of IGBT snubber
FSB56M0434JJC
FSB66U0105K
FSB66N0684K
Polypropylene capacitor 700V
300 volt 5 ampere IGBT a 31
IGBT snubber
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calculation of IGBT snubber
Abstract: FSB66U0125K Polypropylene capacitor 700V
Text: Medium Power Film Capacitors FSB RoHS Compliant GENERAL DESCRIPTION Metallized polypropylene dielectric capacitor with controlled self-healing. Reinforced metallization developed for high impulse currents. APPLICATIONS • IGBT protection • IGBT clamping
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850Vdc
1200Vdc
1600Vdc
2000Vdc
2x10-4
calculation of IGBT snubber
FSB66U0125K
Polypropylene capacitor 700V
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R68 capacitor
Abstract: capacitor 0.22 2000v
Text: Medium Power Film Capacitors FSB Metallized polypropylene dielectric capacitor with controlled self-healing. Reinforced metallization developed for high impulse currents. APPLICATIONS • IGBT protection • IGBT clamping PACKAGING • Parallelipedic plastic case with thermosetting resin
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94J-FSB46U0474J-FSB56U0684J-FSB56U0684JJC
44J-FSB46M0334J-FSB56M0434J-FSB56M0434JJC
84J-FSB46N0224J-FSB56N0304J-FSB56N0304JJC
FSB66B0205K-FSB66B0225K-FSB66B0255K-FSB
FSB66U0105K-FSB66U0125K-FSB66U0155K-FSB
FSB66N0474K-FSB66N0564K-FSB66N0684K--
R68 capacitor
capacitor 0.22 2000v
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FZ1200R33KF1
Abstract: igbt 500V 2A IGBT 3.3kv eupec igbt 3.3kv siemens IGBT 600a Brunner IGBT FZ1200 HIGH VOLTAGE DIODE 3.3kv
Text: Application and Characteristics of High Voltage IGBT Modules M.Hierholzer, eupec GmbH & Co KG, Warstein, Germany A.Porst, Th.Laska, H.Brunner, Siemens AG, München, Germany New IGBT modules with blocking voltage of 3300V and current capability up to 1200A became
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200V/1600V
FZ1200R33KF1
FZ1200R33KF1
igbt 500V 2A
IGBT 3.3kv
eupec igbt 3.3kv
siemens IGBT 600a
Brunner
IGBT FZ1200
HIGH VOLTAGE DIODE 3.3kv
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FOD8316
Abstract: IGBT Transistor 2.5a Pchannel 1200v 25a IGBT schematic diagram fod8316 ISL 2651 full bridge igbt induction heating generator
Text: FOD8316 2.5A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Features Description • High Noise Immunity characterized by common mode The FOD8316 is an advanced 2.5A Output Current IGBT Drive Optocoupler, capable of driving most 1200V/
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FOD8316
IGBT Transistor 2.5a
Pchannel 1200v 25a IGBT
schematic diagram fod8316
ISL 2651
full bridge igbt induction heating generator
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Omnirel
Abstract: OM9404SM
Text: 205 Crawford St. Leominster, MA 01453 978 534-5776 Fax(978)537-4246, www.omnirel.com OM9404SM IGBT GATE DRIVER For Driving IGBT Modules 600V and 1200V, 150A to 600A FEATURES • Rugged Plug-In Package • • • Built in Short Circuit Protection with Fault Output
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OM9404SM
2200pF
10kHz
100uH
Omnirel
OM9404SM
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OM9403SD
Abstract: No abstract text available
Text: 205 Crawford St. Leominster, MA 01453 978 534-5776 Fax(978)537-4246, www.omnirel.com OM9403SD IGBT GATE DRIVER For Driving IGBT Modules 600V and 1200V, 150A to 600A FEATURES • • • • Rugged Ceramic Package Built in short circuit protection with fault output
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OM9403SD
2200pF
10kHz
100uH
OM9403SD
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OM9401SF
Abstract: No abstract text available
Text: 205 Crawford St. Leominster, MA 01453 978 534-5776 Fax(978)537-4246, www.omnirel.com OM9401SF HERMETIC IGBT GATE DRIVER For Driving IGBT Modules 600V and 1200V, 150A to 600A FEATURES • • • • Rugged, Hermetic Package Built in Short Circuit Protection with Fault Output
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OM9401SF
2200pF
10kHz
100uH
OM9401SF
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Untitled
Abstract: No abstract text available
Text: VO3120 Vishay Semiconductors 2.5A 输出电流 IGBT 和 MOSFET 驱动 2.5A Output Current IGBT and MOSFET Driver 特性 • 2.5A 最小峰值输出电流 NC 1 8 VCC A 2 7 VO C 3 6 VO NC 4 5 VEE Shield • 25kV/ s 最小共模抑制 （CMR）， VCM=1500V 条件下
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VO3120
25kV/
2002/95/EC
2011/65/EU
2002/95/ECã
2011/65/EUã
JS709A
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PC924
Abstract: PHOTOCOUPLER IA 05 OPIC PC9241 PC924P 101P V02H 600V dc IGBT
Text: PC924 OPIC Photocoupler for IGBT Dfie of Inverter PC924 x Lead forming type I type and taping reel type (P type) are also available ( PC9’241/pC924P) (page 6.56) 9 Outline Dimensicms (Unit : mm) 1. Built-in direct drive circuit for IGBT drive (1, Iw,~ : 0.4A)
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PC924
241/pC924P)
PC924
PHOTOCOUPLER IA 05 OPIC
PC9241
PC924P
101P
V02H
600V dc IGBT
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OM9405SM
Abstract: Omnirel
Text: 205 Crawford St. Leominster, MA 01453 978 534-5776 Fax(978)537-4246, www.omnirel.com OM9405SM DUAL IGBT GATE DRIVER For Driving IGBT Modules 600V and 1200V, 150A to 600A FEATURES • • • • Rugged Plug-In Package Built in Short Circuit Protection with Fault Output
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OM9405SM
2200pF
10kHz
100uH
OM9405SM
Omnirel
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smd code va25
Abstract: MARKING CODE VA25
Text: KP1510 Series 8PIN IGBT GATE DRIVE PHOTOCOUPLER cosmo Description Schematic The KP1510 series consists of GaAlAs Light 1 8 2 7 3 6 4 5 emitter diode and an integrated. This unit is 8-lead DIP package. KP1510 series is suitable for gate driving circuit of IGBT or power
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KP1510
500ns
100ns
69P51006
smd code va25
MARKING CODE VA25
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