Untitled
Abstract: No abstract text available
Text: APTGV25H120BG Trench & Field Stop IGBT Q1, Q3: VCES = 1200V , IC = 25A @ Tc = 80°C Boost chopper + Full - Bridge NPT & Trench + Field Stop IGBT Power module K K VBUS1 Fast NPT IGBT Q5: VCES = 1200V ; IC = 50A @ Tc = 80°C VBUS2 Q1 CR5 G1 Fast NPT IGBT Q2, Q4:
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APTGV25H120BG
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IGBT full bridge
Abstract: APTGV25H120BG IGBT 1200V 60A APT0501 APT0502 600V igbt dc to dc boost converter
Text: APTGV25H120BG Trench & Field Stop IGBT Q1, Q3: VCES = 1200V , IC = 25A @ Tc = 80°C Boost chopper + Full - Bridge NPT & Trench + Field Stop IGBT Power module K K VBUS1 Fast NPT IGBT Q5: VCES = 1200V ; IC = 50A @ Tc = 80°C VBUS2 Q1 CR5 Q3 G3 CR3 CR1 G1 Fast NPT IGBT Q2, Q4:
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APTGV25H120BG
IGBT full bridge
APTGV25H120BG
IGBT 1200V 60A
APT0501
APT0502
600V igbt dc to dc boost converter
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PDF
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Untitled
Abstract: No abstract text available
Text: APTGV50H120T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 1200V ; IC = 50A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 1200V ; IC = 50A @ Tc = 80°C 13 14 Application Q1 CR1 18 CR3 • Solar converter
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APTGV50H120T3G
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXYR100N120C3 (Electrically Isolated Tab) = = ≤ = 1200V 58A 3.5V 110ns High-Speed IGBT for 20-50 kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES
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IC110
IXYR100N120C3
110ns
ISOPLUS247TM
100N120C3
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PDF
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100N120C3
Abstract: No abstract text available
Text: Preliminary Technical Information IXYR100N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 1200V 58A 3.5V 110ns High-Speed IGBT for 20-50 kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES
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IXYR100N120C3
IC110
110ns
ISOPLUS247TM
100N120C3
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PDF
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Untitled
Abstract: No abstract text available
Text: APTGV25H120T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 1200V ; IC = 25A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 1200V ; IC = 25A @ Tc = 80°C 13 14 Application Q1 CR1 18 CR3 • Solar converter
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APTGV25H120T3G
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100N120C3
Abstract: No abstract text available
Text: Advance Technical Information IXYR100N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 1200V 58A 3.5V 110ns High-Speed IGBT for 20-50 kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES VCGR
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IXYR100N120C3
IC110
110ns
ISOPLUS247TM
100N120C3
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APT0406
Abstract: APT0502 APTGV25H120T3G
Text: APTGV25H120T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module 13 14 Q1 Fast NPT IGBT Q2, Q4: VCES = 1200V ; IC = 25A @ Tc = 80°C Application CR3 CR1 18 Trench & Field Stop® IGBT Q1, Q3: VCES = 1200V ; IC = 25A @ Tc = 80°C Q3 11 • Solar converter
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APTGV25H120T3G
APT0406
APT0502
APTGV25H120T3G
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PDF
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APT0406
Abstract: APT0502 APTGV50H120T3G
Text: APTGV50H120T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module 13 14 Q1 Fast NPT IGBT Q2, Q4: VCES = 1200V ; IC = 50A @ Tc = 80°C Application CR3 CR1 18 Trench & Field Stop® IGBT Q1, Q3: VCES = 1200V ; IC = 50A @ Tc = 80°C Q3 11 • Solar converter
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APTGV50H120T3G
APT0406
APT0502
APTGV50H120T3G
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXYH40N120B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.9V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR
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IC110
IXYH40N120B3D1
183ns
O-247
IF110
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GB15XP120K
Abstract: No abstract text available
Text: Bulletin I27169 Rev.D 10/03 GB15XP120K Three Phase Inverter Module in MTP Package 1200V NPT IGBT & Hexfredtm Diodes Features Gen. 5 NPT 1200V IGBT Technology HEXFRED TM Diode with UltraSoft Reverse Recovery Very Low Conduction and Switching Losses
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I27169
GB15XP120K
18-Jul-08
GB15XP120K
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin I27169 Rev.D 10/03 GB15XP120K Three Phase Inverter Module in MTP Package 1200V NPT IGBT & Hexfredtm Diodes Features Gen. 5 NPT 1200V IGBT Technology HEXFRED TM Diode with UltraSoft Reverse Recovery Very Low Conduction and Switching Losses
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I27169
GB15XP120K
12-Mar-07
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PDF
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IXYN100N120C3H1
Abstract: No abstract text available
Text: Advance Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode IXYN100N120C3H1 High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 62A 3.5V 110ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR
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IXYN100N120C3H1
IC110
110ns
OT-227B,
E153432
IF110
100N120C3
IXYN100N120C3H1
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXYJ20N120C3D1 (Electrically Isolated Tab) = = ≤ = 1200V 7A 4.0V 108ns High-Speed IGBT for 20-50 kHz Switching ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings
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IC110
IXYJ20N120C3D1
108ns
O-247TM
E153432
IF110
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXYR50N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 1200V 32A 4.0V 43ns High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C
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IXYR50N120C3D1
ISOPLUS247TM
IF110
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PDF
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IXYR50N120C3D1
Abstract: No abstract text available
Text: Advance Technical Information IXYR50N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 1200V 32A 4.0V 43ns High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C
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IF110
IXYR50N120C3D1
ISOPLUS247TM
IXYR50N120C3D1
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PDF
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C3834
Abstract: No abstract text available
Text: Advance Technical Information MMIX1G120N120A3V1 VCES = 1200V GenX3TM 1200V IGBT w/ Diode IC110 = 105A VCE sat ≤ 2.2V (Electrically Isolated Tab) Ultra-Low-Vsat PT IGBT for 3kHz Switching C G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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MMIX1G120N120A3V1
IC110
IC110
C3834
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Untitled
Abstract: No abstract text available
Text: APT40GR120B2DU30 APT40GR120B2DU30 1200V, 40A, VCE on = 2.5V Typical Ultra Fast NPT - IGBT with Ultra Soft Recovery Diode The Ultra Fast 1200V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between
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APT40GR120B2DU30
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QR30
Abstract: No abstract text available
Text: Advance Technical Information IXYH40N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IXYH40N120C3D1
O-247
IF110
062in.
QR30
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PDF
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IXYH40N120C3
Abstract: No abstract text available
Text: Preliminary Technical Information IXYH40N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IXYH40N120C3D1
O-247
IF110
062in.
IXYH40N120C3
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Ultra fast diode
Abstract: No abstract text available
Text: Advance Technical Information IXYH20N120C3D1 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 17A 4.0V 108ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IXYH20N120C3D1
IC110
108ns
O-247
IF110
062in.
Ultra fast diode
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode MMIX1Y100N120C3H1 VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 3.5V 110ns C G Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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MMIX1Y100N120C3H1
IC110
110ns
IF110
MMIX1Y100N120C3H1
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) IXYH40N120C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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Original
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IXYH40N120C3D1
O-247
IF110
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXYH20N120C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 17A 4.0V 108ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IC110
IXYH20N120C3D1
108ns
O-247
IF110
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