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    IGBT 1200A Search Results

    IGBT 1200A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 1200A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information DF600R12IP4D IGBT-Module IGBT-modules PrimePACK 2 mit soft schaltendem High Power IGBT4 und Emitter Controlled Diode4 PrimePACK™2 with soft switching High Power IGBT4 and Emitter Controlled Diode4 IGBT-Chopper / IGBT-chopper


    Original     		PDF DF600R12IP4D

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information DF900R12IP4D IGBT-Module IGBT-modules PrimePACK 2 mit soft schaltendem High Power IGBT4 und Emitter Controlled Diode4 PrimePACK™2 with soft switching High Power IGBT4 and Emitter Controlled Diode4 IGBT-Chopper / IGBT-chopper


    Original     		PDF DF900R12IP4D

    FD600R12IP4D

    Abstract: No abstract text available
    Text: Technische Information / technical information FD600R12IP4D IGBT-Module IGBT-modules PrimePACK 2 mit soft schaltendem High Power IGBT4 und Emitter Controlled Diode4 PrimePACK™2 with soft switching High Power IGBT4 and Emitter Controlled Diode4 IGBT-Chopper / IGBT-chopper


    Original     		PDF FD600R12IP4D FD600R12IP4D

    FD900R12IP4D

    Abstract: No abstract text available
    Text: Technische Information / technical information FD900R12IP4D IGBT-Module IGBT-modules PrimePACK 2 mit soft schaltendem High Power IGBT4 und Emitter Controlled Diode4 PrimePACK™2 with soft switching High Power IGBT4 and Emitter Controlled Diode4 IGBT-Chopper / IGBT-chopper


    Original     		PDF FD900R12IP4D FD900R12IP4D

    Untitled

    Abstract: No abstract text available
    Text: 205 Crawford St. Leominster, MA 01453 978 534-5776 Fax(978)537-4246, www.omnirel.com OM9406SM Preliminary Data Sheet IGBT GATE DRIVER For Driving IGBT Modules up to 2500V and 1200A FEATURES • • • • • • • • • Out of Saturation/Short Circuit Protection of the IGBT


    Original     		PDF OM9406SM

    FZ600R65KF2

    Abstract: IGBT 6500V
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ600R65KF2 hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 600A / ICRM = 1200A TypischeAnwendungen • Mittelspannungsantriebe • Traktionsumrichter TypicalApplications


    Original     		PDF FZ600R65KF2 BarcodeCode128 FZ600R65KF2 IGBT 6500V

    FZ600R65KE3

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ600R65KE3 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 600A / ICRM = 1200A TypischeAnwendungen • Mittelspannungsantriebe


    Original     		PDF FZ600R65KE3 Isolationseigenschaftenvon10 FZ600R65KE3

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-12026 R1 MBN1200F33F Target Specification Silicon N-channel IGBT 3300V F version FEATURES  Soft switching behavior, low switching loss & low conduction loss : Soft low-injection punch-through Fine Trench High conductivity IGBT.


    Original     		PDF IGBT-SP-12026 MBN1200F33F 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module DD1200S45KL3_B5 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 4500V IC nom = 1200A / ICRM = 2400A TypischeAnwendungen • Hochleistungsumrichter


    Original     		PDF DD1200S45KL3

    A 3150V

    Abstract: HIGH VOLTAGE DIODE 3.3kv 3150v IGBT 3kv Measurement of stray inductance for IGBT FZ1200R33KF1 scsoa IC A 3150V eupec igbt 3.3kv dc motor speed control circuit diagram with IGBT
    Text: Improved Characteristics of 3.3kV IGBT Modules M.Hierholzer, R.Bayerer, eupec GmbH & Co KG, Warstein, Germany A.Porst, H.Brunner, Siemens AG, München, Germany 3.3kV IGBT modules are available on the market since beginning of 1996. In most applications the IGBT


    Original     		PDF 500Hz-1000Hz A 3150V HIGH VOLTAGE DIODE 3.3kv 3150v IGBT 3kv Measurement of stray inductance for IGBT FZ1200R33KF1 scsoa IC A 3150V eupec igbt 3.3kv dc motor speed control circuit diagram with IGBT

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-12026 R4 P1 MBN1200F33F Preliminary Specification Silicon N-channel IGBT 3300V F version FEATURES ∗ Soft switching behavior, low switching loss & low conduction loss : Soft low-injection punch-through Advanced Trench High conductivity IGBT.


    Original     		PDF IGBT-SP-12026 MBN1200F33F 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE MBN1200H45E2 Silicon N-channel IGBT 4500V E2 version Target Specification Unit in mm OUTLINE DRAWING FEATURES ∗ Low conduction loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF MBN1200H45E2 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-05004 R7 MBN1200E33E Silicon N-channel IGBT 3300V E version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-05004 MBN1200E33E 000cycles)

    d2 diode series

    Abstract: DIODE D2 diode Vfm igbt module QIQ0660001 diode 600a
    Text: QIQ0660001 Powerex Inc., 200 Hillis St., Youngwood, PA 15697 724 925-7272 IGBT H-Series Chopper Hermetic Module 600 Amperes/600 Volts Description: Powerex IGBT Hermetic modules are designed for use in switching applications. Each Module consists of two IGBT transistors


    Original     		PDF QIQ0660001 Amperes/600 d2 diode series DIODE D2 diode Vfm igbt module QIQ0660001 diode 600a

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-05004 R7 MBN1200E33E Silicon N-channel IGBT 3300V E version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-05004 MBN1200E33E 000cycles)

    IGBT DRIVE 600V 300A

    Abstract: what is fast IGBT transistor igbt 600V 300A QIQ0630003 fast recovery diode 600v 1200A
    Text: QIQ0630003 Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper IGBT Module 600V 300A IGBT / 600V 300A Fast Diode Description: Powerex Low side Chopper IGBT Module designed specially for customer applications. The modules are isolated for easy


    Original     		PDF QIQ0630003 -1200A/ IGBT DRIVE 600V 300A what is fast IGBT transistor igbt 600V 300A QIQ0630003 fast recovery diode 600v 1200A

    MBN1200H45E2-H

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-09017 R5 MBN1200H45E2-H P1 Preliminary Specification Silicon N-channel IGBT 4500V E2 version FEATURES ∗ Low switching loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-09017 MBN1200H45E2-H 000cycles) MBN1200H45E2-H

    FZ1200R17HE4

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ1200R17HE4 IHM-BModul IHM-Bmodule VorläufigeDaten/PreliminaryData VCES = 1700V IC nom = 1200A / ICRM = 2400A TypischeAnwendungen • Hochleistungsumrichter • Motorantriebe


    Original     		PDF FZ1200R17HE4 FZ1200R17HE4

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-08007 R6 MBN1200H45E2 Silicon N-channel IGBT 4500V E2 version FEATURES  Low conduction loss IGBT module.  Low noise due to ultra soft fast recovery diode.  High reliability, high durability module.  High thermal fatigue durability.


    Original     		PDF IGBT-SP-08007 MBN1200H45E2 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: Spec.No.IGBT-SP-06038R1 P1 IGBT MODULE MBN1200E17E Silicon N-channel IGBT 1700V E version 1. FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT. ∗ Low driving power: Low input capacitance advanced trench gate.


    Original     		PDF IGBT-SP-06038R1 MBN1200E17E 000cycles) MBN1200E17E

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FF1200R12KE3 VorläufigeDaten/PreliminaryData VCES = 1200V IC nom = 1200A / ICRM = 2400A TypischeAnwendungen • 3-Level-Applikationen • AnwendungenmithohenSchaltfrequenzen • Hochleistungsumrichter


    Original     		PDF FF1200R12KE3

    GATE VOLTAGE FOR 300A ,600V IGBT

    Abstract: fast recovery diode 600v 1200A IGBT DRIVE 600V 300A igbt 600V diode 600v IGBT 600V 16 QIQ0630003
    Text: QIQ0630003 Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 724 925-7272 www.pwrx.com Low side Chopper IGBT Module 600V 300A IGBT / 600V 300A Fast Diode Description: Powerex Low side Chopper IGBT Module designed specially for customer applications. The modules are isolated for easy


    Original     		PDF QIQ0630003 -1200A/ GATE VOLTAGE FOR 300A ,600V IGBT fast recovery diode 600v 1200A IGBT DRIVE 600V 300A igbt 600V diode 600v IGBT 600V 16 QIQ0630003

    igbt 600V 300A

    Abstract: QIQ0630003 GATE VOLTAGE FOR 300A ,600V IGBT E1. N diode IGBT 600V 16 igbt 600V IGBT DRIVE 600V 300A
    Text: QIQ0630003 Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 724 925-7272 www.pwrx.com Low side Chopper IGBT Module 600V 300A IGBT / 600V 300A Fast Diode Description: Powerex Low side Chopper IGBT Module designed specially for customer applications. The modules are isolated for easy


    Original     		PDF QIQ0630003 -1200A/S igbt 600V 300A QIQ0630003 GATE VOLTAGE FOR 300A ,600V IGBT E1. N diode IGBT 600V 16 igbt 600V IGBT DRIVE 600V 300A

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-09017 R7 MBN1200H45E2-H Silicon N-channel IGBT 4500V E2 version FEATURES ∗ Low switching loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module. ∗ High thermal fatigue durability.


    Original     		PDF IGBT-SP-09017 MBN1200H45E2-H 000cycles)