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    IGBT 1000V .200A APPLICATION NOTE Search Results

    IGBT 1000V .200A APPLICATION NOTE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 1000V .200A APPLICATION NOTE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CM200DY-34A

    Abstract: CM-200 IGBT 1000V .200A application note
    Text: MITSUBISHI IGBT MODULES CM200DY-34A HIGH POWER SWITCHING USE CM200DY-34A ¡IC . 200A ¡VCES . 1700V ¡Insulated Type ¡2-elements in a pack


    Original     		PDF CM200DY-34A CM200DY-34A CM-200 IGBT 1000V .200A application note

    cm200dy-34a

    Abstract: IGBT 1000V .200A
    Text: MITSUBISHI IGBT MODULES CM200DY-34A HIGH POWER SWITCHING USE CM200DY-34A ¡IC . 200A ¡VCES . 1700V ¡Insulated Type ¡2-elements in a pack


    Original     		PDF CM200DY-34A 063K/W cm200dy-34a IGBT 1000V .200A

    CM200DU-34KA

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM200DU-34KA HIGH POWER SWITCHING USE CM200DU-34KA ● IC . 200A ● VCES . 1700V ● Insulated Type ● 2-elements in a pack


    Original     		PDF CM200DU-34KA CM200DU-34KA

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM200DU-34KA HIGH POWER SWITCHING USE No t fo R r N ec ew om De me sig nd n CM200DU-34KA ● IC . 200A ● VCES . 1700V


    Original     		PDF CM200DU-34KA

    CM200DU-34KA

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM200DU-34KA HIGH POWER SWITCHING USE CM200DU-34KA ● IC . 200A ● VCES . 1700V ● Insulated Type ● 2-elements in a pack


    Original     		PDF CM200DU-34KA CM200DU-34KA

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM200DU-34KA HIGH POWER SWITCHING USE No t fo R r N ec ew om De me sig nd n CM200DU-34KA ● IC . 200A ● VCES . 1700V


    Original     		PDF CM200DU-34KA

    FGH40T100SMD

    Abstract: fgh40t100 W10K AC welder IGBT circuit IGBT 1000V .200A igbt 1000v 80a DBVCE
    Text: FGH40T100SMD 1000V, 40A Field Stop Trench IGBT Features General Description • High current capability Using Novel Field Stop Trench IGBT Technology, Fairchild’s new series of Field Stop Trench IGBTs offer the optimum performance for hard switching application such as UPS, welder,


    Original     		PDF FGH40T100SMD FGH40T100SMD fgh40t100 W10K AC welder IGBT circuit IGBT 1000V .200A igbt 1000v 80a DBVCE

    Untitled

    Abstract: No abstract text available
    Text: FGH40T100SMD 1000V, 40A Field Stop Trench IGBT Features General Description • High current capability Using Novel Field Stop Trench IGBT Technology, Fairchild’s new series of Field Stop Trench IGBTs offer the optimum performance for hard switching application such as UPS, welder,


    Original     		PDF FGH40T100SMD 25oductor FGH40T100SMD

    RURP8100CC

    Abstract: No abstract text available
    Text: RURP8100CC Data Sheet January 2000 File Number 4021.1 8A, 1000V Ultrafast Dual Diode Features The RURP8100CC is an ultrafast dual diode with soft recovery characteristics trr < 85ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted


    Original     		PDF RURP8100CC RURP8100CC

    RHR8100C

    Abstract: RHRP8100CC
    Text: RHRP8100CC Data Sheet Title HR 100 bt A, 00V pert al ode) utho rpoon, minctor, ache erg ted, itch wer pes, wer File Number 3965.2 8A, 1000V Hyperfast Dual Diode Features The RHRP8100CC is a hyperfast dual diode with soft recovery characteristics trr < 55ns). It has half the recovery


    Original     		PDF RHRP8100CC RHRP8100CC RHR8100C

    RHR8100C

    Abstract: RHRP8100CC
    Text: RHRP8100CC Data Sheet January 2002 8A, 1000V Hyperfast Dual Diode Features The RHRP8100CC is a hyperfast dual diode with soft recovery characteristics trr < 55ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF RHRP8100CC RHRP8100CC 175oC RHR8100C

    RURP8100CC

    Abstract: IGBT 1000V .200A
    Text: RURP8100CC Data Sheet January 2002 8A, 1000V Ultrafast Dual Diode Features The RURP8100CC is an ultrafast dual diode with soft recovery characteristics trr < 85ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF RURP8100CC RURP8100CC 175oC IGBT 1000V .200A

    MUR8100

    Abstract: MUR8100E RUR8100 RURP8100
    Text: MUR8100E, RURP8100 Data Sheet January 2002 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.


    Original     		PDF MUR8100E, RURP8100 MUR8100E RUR8100 175oC MUR8100 RURP8100

    MU8100

    Abstract: No abstract text available
    Text: MUR8100E, RURP8100 Data Sheet December 2002 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.


    Original     		PDF MUR8100E, RURP8100 MUR8100E RUR8100 MU8100

    MUR8100

    Abstract: MUR8100E RUR8100 RURP8100
    Text: MUR8100E, RURP8100 Data Sheet January 2000 File Number 2780.4 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride


    Original     		PDF MUR8100E, RURP8100 MUR8100E RUR8100 175oC MUR8100 RURP8100

    Untitled

    Abstract: No abstract text available
    Text: Date:- 6 August, 2012 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T0340VB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800


    Original     		PDF T0340VB45G T0340VB45G

    T0340VB

    Abstract: T0340VB45G westcode igbt
    Text: Date:- 6 August, 2012 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T0340VB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800


    Original     		PDF T0340VB45G VRM10V, T0340VB45G T0340VB westcode igbt

    APT0502

    Abstract: IGBT 1000V .200A APTGT200U170D4G
    Text: APTGT200U170D4G Single switch Trench + Field Stop IGBT Power Module 1 3 5 2 VCES = 1700V IC = 200A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Trench + Field Stop IGBT Technology


    Original     		PDF APTGT200U170D4G APT0502 IGBT 1000V .200A APTGT200U170D4G

    APT0502

    Abstract: No abstract text available
    Text: APTGT200SK170D3G Buck Chopper Trench + Field Stop IGBT Power Module Q1 3 VCES = 1700V IC = 200A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies 4 5 1 2 Features • Trench + Field Stop IGBT Technology - Low voltage drop


    Original     		PDF APTGT200SK170D3G APT0502

    IGBT 1000V .200A

    Abstract: APT0502
    Text: APTGT200DA170D3G Boost chopper Trench + Field Stop IGBT Power Module 3 Q2 1 6 7 2 VCES = 1700V IC = 200A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Trench + Field Stop IGBT Technology


    Original     		PDF APTGT200DA170D3G IGBT 1000V .200A APT0502

    APTGT200A170D3G

    Abstract: No abstract text available
    Text: APTGT200A170D3G Phase leg Trench + Field Stop IGBT Power Module Q1 3 4 5 Q2 1 6 7 2 VCES = 1700V IC = 200A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Trench + Field Stop IGBT Technology


    Original     		PDF APTGT200A170D3G APTGT200A170D3G

    Untitled

    Abstract: No abstract text available
    Text: APTGT200SK170D3G Buck Chopper Trench + Field Stop IGBT Power Module Q1 3 VCES = 1700V IC = 200A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies 4 5 1 2 Features • Trench + Field Stop IGBT Technology - Low voltage drop


    Original     		PDF APTGT200SK170D3G

    Untitled

    Abstract: No abstract text available
    Text: APTGT200A170D3G Phase leg Trench + Field Stop IGBT Power Module Q1 3 4 5 Q2 1 6 7 2 VCES = 1700V IC = 200A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Trench + Field Stop IGBT Technology


    Original     		PDF APTGT200A170D3G

    DIM200PLM33-F000

    Abstract: DIM200PLM33-F IGBT 1000V .200A application note
    Text: DIM200PLM33-F000 IGBT Chopper Module Replaces DS5864-2 DS5864-3 October 2011 LN28812 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK) (max)


    Original     		PDF DIM200PLM33-F000 DS5864-2 DS5864-3 LN28812) DIM200PLM33-F000 DIM200PLM33-F IGBT 1000V .200A application note