silicon thermal grease g747
Abstract: shin-etsu g747 MBL800E33E G747 shinetsu IGBT 3300V
Text: IGBT MODULE 1 Spec.No.IGBT-SP-08038 R0 MBL800E33E Silicon N-channel IGBT 3300V E version 1. FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.
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IGBT-SP-08038
MBL800E33E
000cycles)
MBL800E33r
silicon thermal grease g747
shin-etsu g747
MBL800E33E
G747
shinetsu
IGBT 3300V
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MBN1800E17D
Abstract: IC1 723 DTT11
Text: IGBT MODULE Spec.No.IGBT-SP-04023 R1 P1 MBN1800E17DD TARGET SPECIFICATION Silicon N-channel IGBT 1. FEATURES ∗ High speed, low loss IGBT module due to LiPT Trench Technology ∗ Low noise due to ultra soft fast recovery diode. U-SFD ∗ High reverse recovery capability (HiRC)
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IGBT-SP-04023
MBN1800E17DD
000cycles)
MBN1800E17D
IC1 723
DTT11
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V056
Abstract: MBL400E33D MBL400e33 MBL400 52CT Diode T3 61 RG103 V05-6 diode v05 hitachi
Text: IGBT MODULE Spec.No.IGBT-SP-06008 R4 P1/7 MBL400E33D Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70 ,N>30,000cycles ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode – ultra soft fast recovery diode(USFD).
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IGBT-SP-06008
MBL400E33D
000cycles)
V056
MBL400E33D
MBL400e33
MBL400
52CT
Diode T3 61
RG103
V05-6
diode v05 hitachi
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MBM1200E17D
Abstract: No abstract text available
Text: Spec.No.IGBT-SP-05003 R7 P1/9 Dual IGBT Module MBM1200E17D Silicon N-channel IGBT OUTLINE DRAWING 1. FEATURES Unit in mm ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.
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MBM1200E17D
000cycles)
MBM1200E17D
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MBN1200E17D
Abstract: Measurement of stray inductance for IGBT 65NH GE-12 Hitachi DSA00281
Text: IGBT MODULE Spec.No.IGBT-SP-03007 R7 MBN1200E17D Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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IGBT-SP-03007
MBN1200E17D
000cycles)
MBN1200E17D
Measurement of stray inductance for IGBT
65NH
GE-12
Hitachi DSA00281
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AN9701
Abstract: siemens igbt application note driver igbt SIEMENS IHD280 OSC4216 IGBT DRIVER application note AN-9701 BSM200GB120DN2 "IGBT Drivers" IHD280 equivalent
Text: AN-9701 Application Note IGBT drivers correctly calculated What you must know when dimensioning an IGBT driver by Heinz Rüedi and Peter Köhli Introduction The correct selection and dimensioning of IGBT drivers often involves questions or uncertainties. This is in part due to the specifications of the IGBTs themselves. Thus there
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AN-9701
2150nAs
IHD280
AN9701
siemens igbt application note
driver igbt SIEMENS
OSC4216
IGBT DRIVER application note
AN-9701
BSM200GB120DN2
"IGBT Drivers"
IHD280 equivalent
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BR98
Abstract: FF1200R17KP4 9AaN
Text: Technische Information / technical information FF1200R17KP4_B2 IGBT-Module IGBT-modules * ) () * 1 + , . + /, . + / 2 + - ,! + - ,! 3 0456 7 4 89: 7 , •( •) •) •, • $ ? •0 • + * . + / / + , • • • • • / ? + / + $/ 1? 2 / 0>$ + A BA ?
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FF1200R17KP4
BR98
9AaN
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KU21
Abstract: FS20R06W1E3 DL94 UCW24
Text: Technische Information / technical information FS20R06W1E3 IGBT-Module IGBT-modules EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTC EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC ' *
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FS20R06W1E3
KU21
FS20R06W1E3
DL94
UCW24
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FS30R06W1E3
Abstract: qsq100
Text: Technische Information / technical information FS30R06W1E3 IGBT-Module IGBT-modules EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTC EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC * +
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FS30R06W1E3
FS30R06W1E3
qsq100
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FZ400R12KP4
Abstract: DIODE JS 8 YZ 160
Text: Technische Information / technical information FZ400R12KP4 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode 62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode ' * + ',-. /
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FZ400R12KP4
FZ400R12KP4
DIODE JS 8
YZ 160
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information FP10R12W1T4 IGBT-Module IGBT-modules EasyPIM Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC EasyPIM™ module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
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FP10R12W1T4
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GK4001
Abstract: QY10 FZ1800R17
Text: Technische Information / technical information FZ1800R17HP4_B9 IGBT-Module IGBT-modules IHM-B Modul mit soft schaltendem Trench-IGBT4 IHM-B module with soft-switching Trench-IGBT4 " # $ % & "' * + " ' ,-. * / 0 & '12 * 3 4 • •9 5 0 6 5 $ $ 5 : ; 5 :$
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FZ1800R17HP4
GK4001
QY10
FZ1800R17
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DC 300V to 15V converter
Abstract: igbt 600v 20a MIG20J805H n channel 600v 20a IGBT toshiba a 200 inverter P channel 600v 20a IGBT
Text: TOSHIBA MIG20J805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • Integrates Inverter, Converter Power Circuits in One Package. Output Inverter Stage : Z<j> 20A/600V IGBT
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MIG20J805H
0A/600V
0A/800V
2-81B1A
961001EAA1
DC 300V to 15V converter
igbt 600v 20a
MIG20J805H
n channel 600v 20a IGBT
toshiba a 200 inverter
P channel 600v 20a IGBT
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hexfred
Abstract: No abstract text available
Text: International Rectifier I«R PD -5.051 B PRELIMINARY "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK GA400TD25S Standard Speed IGBT Features • Generation 4 IGBT technology V ces = 250V • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz
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GA400TD25S
10kHz
hexfred
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MG100J2YS40
Abstract: FAp DARLINGTON TRANSISTOR TOSHIBA IGBT snubber ap 5331 application POWER MOSFET HIG VELOCITY calculation of IGBT snubber P-Channel IGBT TRANSISTOR EN SMD TZ FAp DARLINGTON SMD TRANSISTOR
Text: TOSHIBA 2. [ 5 ] IGBT Description IGBT Construction 2.1 Chip Construction IGBT Insulated G ate B ipolar T ransistors are devices which combine the high in p u t im pedance and high speed of th e M OSFET w ith the high conductivity characteristics (low sa tu ratio n
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Thunderbolt
Abstract: No abstract text available
Text: APT20GT60KR A dvanced R ow er T e c h n o lo g y 6oov 4o a Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.
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APT20GT60KR
150KHz
20KI2)
66Vces
200iiH,
MIL-STD-750
Thunderbolt
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APT30GT60
Abstract: No abstract text available
Text: IT J M APT30GT60BR A dvanced R ow er Te c h n o lo g y 6oov 55A Thunderbolt IGBT The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.
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APT30GT60BR
150KHz
20KI2)
66Vces
MIL-STD-750
APT30GT60
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Untitled
Abstract: No abstract text available
Text: APT20GT60BR A dvanced I T J R ow er T e c h n o lo g y 6oov 4o a Thunderbolt IGBT The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.
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APT20GT60BR
150KHz
20KI2)
Coll25
66Vces
200iiH,
MIL-STD-750
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Untitled
Abstract: No abstract text available
Text: A d van c ed I T J R ow er Tec h n o lo g y APT20GF120BR 1200v 32A Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and lowCollector-Emitter On voltage.
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APT20GF120BR
1200v
20KHz
APT20GF120BR
20KI2)
F-33700Merignac-France
F-33700
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Untitled
Abstract: No abstract text available
Text: A d van c ed I T J R ow er Tec h n o lo g y APT20GF120KR 1200v 32A Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage.
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APT20GF120KR
1200v
20KHz
APT20GF120KR
20KI2)
F-33700Merignac-France
F-33700
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Untitled
Abstract: No abstract text available
Text: A dvanced R ow er Te c h n o lo g y A P T 33G F 120B R 1200 v 52A Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and lowCollector-Emitter On voltage.
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20KHz
APT33GF120BR
20KI2)
F-33700
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igbt 500V 50A
Abstract: No abstract text available
Text: bitemational [ÏÔR]Rectifier Provisional Data Sheet PD-9.1183 IRGKIN050K06 "CHOPPER“ IGBT INT-A-PAK Low conduction loss IGBT • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all “tail" losses •Short circuit rated Description
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IRGKIN050K06
C-988
igbt 500V 50A
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Untitled
Abstract: No abstract text available
Text: H P 5A d va n ced F M PO W ER M l T e c h n o lo g y APT30GT60BRD 600v 55A Thunderbolt IGBT & FRED The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode FRED offers
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APT30GT60BRD
150KHz
O-247
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IRGNI090U06
Abstract: C799 cx fuse c796 47110
Text: International ^Rectifier PM970B IRGNI090U06 "CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"
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25KHz
100KHz
supp06
100nH
C-800
IRGNI090U06
C799
cx fuse
c796
47110
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