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    IFP2N60

    Abstract: No abstract text available
    Text: IFP/IFD/IFU2N60 N-Channel MOSFET Features • RDS on (Max 5.0 Ω)@VGS=10 V • Gate Charge (Typical 9.5 nC) • Maximum Junction Temperature Range (150 °C) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG TJ Notes Parameter Drain to Source Voltage


    Original     		PDF IFP/IFD/IFU2N60 300us, IFP2N60-TSe IFP2N60

    IL311ANM

    Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D
    Text: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.


    Original     		PDF