Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IFN6450 Search Results

    IFN6450 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IFN6450 InterFET N-Channel Silicon Junction Field-Effect Transistor Original PDF
    IFN6450 InterFET N-Channel silicon junction field-effect transistor Original PDF

    IFN6450 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IFN6449

    Abstract: IFN6450
    Text: Databook.fxp 1/13/99 2:09 PM Page B-48 B-48 01/99 IFN6449, IFN6450 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ High Voltage Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current


    Original
    PDF IFN6449, IFN6450 IFN6449 IFN6449 IFN6450

    IFN6449

    Abstract: IFN6450
    Text: Databook.fxp 1/13/99 2:09 PM Page B-48 B-48 01/99 IFN6449, IFN6450 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ High Voltage Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current


    Original
    PDF IFN6449, IFN6450 IFN6449 IFN6449 IFN6450

    2N6449

    Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116
    Text: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current


    Original
    PDF 2N3821, 2N3822 2N3821 2N6449 MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116

    F25 transistor

    Abstract: 2N6449 2N6450 equivalent 2N6450 IFN6449 IFN6450
    Text: Databook.fxp 1/13/99 2:09 PM Page F-24 F-24 01/99 NJ42 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier ¥ High Breakdown Voltage S Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts


    Original
    PDF 2N6449, 2N6450 IFN6449, IFN6450 F25 transistor 2N6449 2N6450 equivalent 2N6450 IFN6449 IFN6450

    2SJ111

    Abstract: 2SJ109BL 2SJ109GR 2N4882 2N3333 2N3112 2N5033 2SJ109V BF320 2SJ111BL
    Text: JUNCTION FET Item Number Part Number Manufacturer g. V BA GSS loss (V) (A) Min (S) Max 70 70 70 70 70 75 75 75 75 80 3.0m 4.5m 6.0m 8.0m 10m 2.0m 7.5m 7.5m 10m 17m 2.0m 3.0m 4.0m 4.5m 4.5m 350u 600u 600u 750u 6.0m 6.5m 7.0m 7.0m 7.5m 1.0m 1.5m 1.5m 3.0m 199


    Original
    PDF 2N5392 2N5393 2N5394 2N5395 2N5396 2N4885 2N4886 2N5543 2SK223 2SJ111 2SJ109BL 2SJ109GR 2N4882 2N3333 2N3112 2N5033 2SJ109V BF320 2SJ111BL

    Untitled

    Abstract: No abstract text available
    Text: B 48 9 -9 7 IFN6449, IFN6450 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR HIGH VOLTAGE Absolute maximum ratings at T* = 25°C IFN6449 Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation


    OCR Scan
    PDF IFN6449, IFN6450 IFN6449 46BbBÃ 00007bÃ