Untitled
Abstract: No abstract text available
Text: SEMiX 302GB128Ds Absolute Maximum Ratings Symbol Conditions IGBT . '+ , 1 . 0+ , 134 '+,- ! % 0'( '2+ $ 2( , '( $ 6( $ 8'( 0( = '+ , '6( $ 2( , 09( $ 6( $ 06( $ 9( $ @( ? A 0+(
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302GB128Ds
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Untitled
Abstract: No abstract text available
Text: SK 30 DGDL 066 ET CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, chopper L$OR @$ @$ @$`a LAOR ?- Q ]XZ$ P 407,- %*8,23.-, -', .6.,+ ?- Q ]X ;_J> Z$P ?Y Q I_X Z$ ?- Q ]X ;_J> Z$P ?Y Q IXJ Z$ @$`a Q ] : @$0%&P *' Q I &-
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Typic30
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YLE relay
Abstract: No abstract text available
Text: :8.018 =;>;3CDA7 :;9: @?F7A A7<3H 8MJWXUMV \ \ \ \ \ \ \ \ \ \ y@C< +Feqxhjklhn E 6 7 y@C< +Feqkggjiojj 5?;< 63C3 5?>C35C 63C3 vFEK8:K 8II8E><D<EK htc hv hggD D8Oe`8K ht m3wva vFEK8:K I<J@JK8E:< igt JN@K:?@E> :8G89@C@KP ~FN ?<@>?Kq hlen DD lB3 ;@<C<:KI@: JKI<E>K? `9<KN<<E :F@C 8E; :FEK8:KJa
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umt block diagram
Abstract: PC912X 06ti
Text: PC912x PC912X URra-hgh Speed Raswse OPIC PhotoCoupler 9 Features 1. Ultra-high speed response ti,l+r., t}, II : TYP. 40ns 2. High instantaneous common mode rejection voltage (CMII : MIN. 3kV/ MS) 3. Capable of high speed digital transmission (Transmission speed : MAX. 20 Mb/s)
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PC912x
umt block diagram
PC912X
06ti
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3N121
Abstract: 3n123
Text: , One, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. OtVICI •CLARITY 3N121 3N123 3N129 3N130 3N131 BVlfO yum NPN PNP PNP PNP PNP 20 25 10 20 30 TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 BVctO r»« (Jol) !(EO Vo« VMIN nA MAX uMAX .VMAX
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3N121
3N123
3N129
3N130
3N131
3N121
3n123
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Untitled
Abstract: No abstract text available
Text: TPS53317 www.ti.com SLUSAK4C – JUNE 2011 – REVISED JANUARY 2014 6-A Output, D-CAP+ Mode, Synchronous Step-Down, Integrated-FET Converter for DDR Memory Termination Check for Samples: TPS53317 FEATURES DESCRIPTION • The TPS53317 is a FET-integrated synchronous buck
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TPS53317
TPS53317
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2SD1484K
Abstract: 2SD1949 T106 T107 T146 T147
Text: h -7 > y 7 * £ /Transistors 2SD1484K/2SD1949 2SD1484K 2SD1949 Epitaxial Planar NPN Silicon Transistor 4>Êt^*llÜ£i/Medium Power Amp. • Wfé'+ÌÉEI/Dimensions Unit : mm 2SD 1949 2SD1484K 2 .9 ± 0 .2 VcEO=50V, lc=500mA M IEJ 2) V c e (sat)^f‘(&'''o
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2SD1484K/2SD1949
2SD1484K
2SD1949
500mA
150mA,
2SD1484K
SC-59
2SD1949
T106
T107
T146
T147
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1497B
Abstract: 1498H 1498R UL1497K UL1490 UL1498K 1495N 1498K 1490n 497K
Text: ¡ K R U N IT R f í IsSI CEMI UL UL UL UL UL Jest to rodzina monolitycznycb wznacniaozy ma~ iej orf^stotliwoáci charakferyzujqcych si? nast^puj^cy«! ceohaai: - du¿a ceuioéé, - mate snlekaztalcenie, - du¿e t2umienie t$tnieA aasilanla, - mala lloéó element<5w zewn^trznych.
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1490N
1495N
1496R
1498K
1498R
1495F;
1497B
1498H
1498R
UL1497K
UL1490
UL1498K
1495N
497K
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BF167
Abstract: J BF167 TEWA 00156033 CE25 T072 t448
Text: 12- 74/2 T R A N Z Y S T O R n-p-n & BF167 SWW 1156-213 Tranzystor krzem ow y planarny m alej m ocy w ielk iej czQ stotliwoici. Jest przeznaczony do stosow ania w stopniu regu lacyjnym w zm acniacza poSredniej cz^stotliwoSci w izji odbiorriik6w telew izyjn ych .
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BF167
BF167
J BF167
TEWA
00156033
CE25
T072
t448
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DSAGER00068
Abstract: No abstract text available
Text: UL UL UL UL UL Jest to rodzina monolitycznych wznsacniaozy ma iej oÂÇstotliwoàci charakferyzujQoych siç na ôtçpuj^oy»! ceohawi: - du ¿a ozuìoéó, - 1490M 1495N 1496K, UL 1496R 1497K, UL 1497R 1498K, UL 1498R mrnle z n i e k e z t a l c e n i e ,
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1490M
1495N
1496K,
1496R
1497K,
1497R
1498K,
1498R
1490N
DSAGER00068
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TRL15
Abstract: cfy transistor CFY 18 heft DRO components
Text: In fineon fschncio^iej 15 GHz G aAs-FE T B u ffe re d O s c illa to r A p p lic a tio n Note No. 010 A buffered stable oscillator has been developed using a parallel feedback circuit, two CFY 35 GaAs-field effect transistors and a dielectric resonator. !n addition a spacer for
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SJ038317
Abstract: No abstract text available
Text: % -n b DATE JK f t REV. 8 I E8£0PS 2 'ON O N I M V t i O l i ^ S E DON 9.Au g. 2005 3 B.Au 0. 2006 W. M S DESCRIPTION NO. 056937 ADDED 060641 ADDED LOT □ y h N 0 .iEJ&D COMPANY REVISED 27.Jun.2008 4 m LOGO *JAE“ DR. $ H APPD. m ys CHK. # u APPD.
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XB30SSL--
-R2500
SJ038317
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BF214
Abstract: BF215 BF-215 J BF214 y12c GE c22c C22C C22E MAF100 y12e
Text: TRANZYSTORY BF214 i BF215 19-74/2 n -p -n SWW 1156-213 T rarizy sto ry krzem o w e e p ip la n a rn e m ale j m ocy w ielk iej cz^stotliw osci. T ra n z y sto r BF214 je st przezn aczo n y do sto so w a n ia we w z m acn iaczach poSredniej cz^ stotliw osci o d b io rn ik o w r a diow ych AM oraz A M -F M i poSredniej cz^stotliw oSci
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BF214
BF215
BF215
lY21el;
Y126I;
BF-215
J BF214
y12c
GE c22c
C22C
C22E
MAF100
y12e
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BF196
Abstract: tewa BF 196 tranzystor C12e3
Text: n-p-n TRANZYSTOR *• BF196 17 - 74/2 SWW 1156-213 T ra n z y s to r k rz em o w y p la n a rn y m ale j m ocy w ie lk ie j czçstotliw oàci. J e s t przezn aczo n y do sto so w an ia w sto p n iu re g u la c y jn y m w z m acn iacza p o sre d n iej czçstotliw osci w izji, od b io rn ik ó w
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BF196
f-35MHz
tamlr25Â
35MHz
022el
BF196
tewa
BF 196
tranzystor
C12e3
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BF197
Abstract: BF197-01 35T3
Text: n-p-n TRANZYSTOR * BF197 SWW 1156-213 T ra n z y sto r k rz em o w y e p ip la n a rn y m aie j m ocy w ie lk ie j cz^stotliw oéci. J e s t p rzezn aczo n y do sto so w an ia w sto p n iac h w y jsc io w ych w zm acniaczy p o sre d n iej cz^stotliw osci w izji o d b io rn ik ó w tele w izy jn y ch .
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BF197
BF197
BF197-01
35T3
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u6 ej
Abstract: DSAGER00049 UL122XN
Text: 7-77/2 UKLAD SCALONY ANALOGOUS UL122XN SWW 1156-32 M Á&AAA W W W J < 17, a _ U klad scalony w obudow ie p lasty k o w ej ty p u CE70 T O -116 S ch em at elek try czn y 1, 2 —• w ejscie sy g n alu p. cz., 3 — n ie podl^czone, 4 — m asa, 5 — w ejácie im pulsów
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UL122XN
UL1221N
PN-73/E-04550.
u6 ej
DSAGER00049
UL122XN
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702 P TRANSISTOR
Abstract: LTA 702 TRansistor L 701 LTA 703 S 701 transistor 702 transistor k/702 P transistor
Text: KSE700/701/702/703 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MINhFE=750 @ lc= -1.5 and -2 .0 A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • Complement to KSE800/801/802/803 ABSOLUTE MAXIMUM RATINGS -
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KSE700/701/702/703
KSE800/801/802/803
KSE700/701
702 P TRANSISTOR
LTA 702
TRansistor L 701
LTA 703 S
701 transistor
702 transistor
k/702 P transistor
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m54517p
Abstract: M54517 3e tRANSISTOR mitsubishi 7 pin 5v relay NO DARLINGTON SINK DRIVER
Text: fciBE • b 2 4 =]fl5 7 M IT S U B IS H I □ D m 'ìb 'ì D GT L In I T 3 TD7 MI T SU BI SH I BIPOLAR DIGITAL ICs M 54517P LO G IC 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION The M54517P, 7-channel sink driver, consists of 14 NPN tran PIN CONFIGURATION (TOP VIEW)
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M54517P
400mA
M54517P,
400mA
M54517P
M54517
3e tRANSISTOR
mitsubishi 7 pin 5v relay NO
DARLINGTON SINK DRIVER
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Untitled
Abstract: No abstract text available
Text: 1ï - V T V ' j —n SHINDEN6EN E L E C T R IC flFfi 32E SURGE ABSORBERS ]> a a n s a ? - aoooD2t •IEJ t. Silicon* Varistors4 iS 6 ■& qo • » flu fê tt Eleotrical Charateristics « I I » IF If s m Ti T s tg re] DC] iFt [V ] [m A ] [m A ] [A ] 200
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Untitled
Abstract: No abstract text available
Text: 19-0060; RevO; 8/92 Quad, SPST, CMOS, TTL-Com patible _ Analog S w itches 1.1 This specification covers the detail requirements for two quad, SPST, CMOS switches. These cir cuits are processed in accordance with MIL-STD-883 and are fully compliant to paragraph 1.2.1.
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DG308A/DQ309/883B
MIL-STD-883
16-Pin
DG308M
/883B
DG309A
/883B
DG308A
DG309
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Untitled
Abstract: No abstract text available
Text: PRO DUCT DESCRIPTIO N PRO DUCT FEATURES 2.0 micron CMOS The IMI6000 family of gate arrays from International M icrocircuits is fabricated from an advanced 2.0 micron double metal oxide-isolated CMOS process. This process is unmatched for speed and density
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IMI6000
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Untitled
Abstract: No abstract text available
Text: MP8782 CM OS 5 MSPS, 10-Bit High Speed Analog-to-Digital Converter 2PEX4R FEATURES APPLICATIONS 10-Bit Resolution 5 MHz Sampling Rate DNL = ±1 LSB, INL = ±2 LSB Internal S/H Function Single 5 V Power Supply V in DC Range: 0 V to V qd V ref DC Range: 1 V to VDD
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MP8782
10-Bit
MP87L82
P8782AE
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OKI electronic components T34
Abstract: Photosensors
Text: E2P0ü2<S~27-3: OKI electronic components T34_ Silicon Planar Phototransistor GENERAL DESCRIPTION The planar structure of the T34 silicon phototransistor provides a high degree of sensitivity. High reliability is ensured by a hermetically sealed metal can package.
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J141
Abstract: JB 71 REED RELAY PANASONIC AN5821 DEL11 7ati
Text: ic AN5821 AN5821 T- m t t m m Control Signal Generator Circuit for TV M ultiplex Sound S y s te m s mm w / AN 5821 l i , D es c ri p t i o n I t IT f u m të i< r m AN 5820 iJ J: V A N 5822 i f i A r r'-Ty îs i ^ m ^ e S ; t £ t -f 0 4$ • AN 5821 I> 1 2
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AN5821
08m-ax.
922C4
982C4
022uF
125kHz
LN31GPX3
J141
JB 71
REED RELAY PANASONIC
AN5821
DEL11
7ati
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