s21b
Abstract: s22b KSC2758 package marking s22b ic s21b marking s21b GPB15
Text: KSC2758 KSC2758 RF. Mixer for UHF Tuner • High Power Gain : GPE=17dB TYP. at f=900MHz • Low Noise Figure : NF=2.8dB(TYP.) at f=900MHz 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSC2758
900MHz
OT-23
s21b
s22b
KSC2758
package marking s22b
ic s21b
marking s21b
GPB15
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transistor C 245 b
Abstract: No abstract text available
Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C C B E TO-92 B SOT-23 E Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 mA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for
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MPSH11
MMBTH11
MPSH11
OT-23
transistor C 245 b
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Untitled
Abstract: No abstract text available
Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C E TO-92 B B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for
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MPSH11
MMBTH11
MPSH11
OT-23
MPSH11/MMBTH11,
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transistor 26
Abstract: MMBTH11 MPSH11 Q100 Z-235 L1245 transistor t 270
Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C E TO-92 B B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for
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MPSH11
MMBTH11
MPSH11
OT-23
MPSH11/MMBTH11,
transistor 26
MMBTH11
Q100
Z-235
L1245
transistor t 270
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transistor marking 3em
Abstract: 556 ITT MMBTH10 sot-23 Marking YRE
Text: MMBTH10 NPN 1.1 GHz RF Transistor COLLECTOR 3 P b Lead Pb -Free 1 BASE 2 FEATURES Designed for VHF/UHF Amplifier Applications EMITTER and High Output VHF oscillators. High Current Gain Bandwidth product. Ideal for Mixer and RF Amplifier Application with Collector Current in the
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MMBTH10
100mA
OT-23
09-Feb-07
OT-23Package
transistor marking 3em
556 ITT
MMBTH10
sot-23 Marking YRE
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s21b
Abstract: s22b package marking s22b ic s21b KSC2759
Text: KSC2759 KSC2759 Mixer, Oscillator for UHF Tuner 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 30 Units V VCEO VEBO Collector-Emitter Voltage
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KSC2759
OT-23
s21b
s22b
package marking s22b
ic s21b
KSC2759
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rf transistor mark code H1
Abstract: CBVK741B019 F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 D3000
Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for
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MPSH11
MMBTH11
MPSH11
OT-23
rf transistor mark code H1
CBVK741B019
F63TNR
MMBTH11
PN2222N
Q100
Z-235
D3000
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CBVK741B019
Abstract: F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 transistor 26
Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for
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MPSH11
MMBTH11
MPSH11
OT-23
CBVK741B019
F63TNR
MMBTH11
PN2222N
Q100
Z-235
transistor 26
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MPS-H20
Abstract: npn, transistor, sc 107 b MV400 3 w RF POWER TRANSISTOR NPN
Text: MPSH20 / MMBTH20 MPSH20 MMBTH20 C C B E TO-92 B SOT-23 E Mark: 3L NPN RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 49. Absolute Maximum Ratings*
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MPSH20
MMBTH20
MPSH20
OT-23
MPS-H20
npn, transistor, sc 107 b
MV400
3 w RF POWER TRANSISTOR NPN
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MPSH20
Abstract: MMBTH20 Q100 500 uf 50v npn, transistor, sc 107 b
Text: MPSH20 / MMBTH20 MPSH20 MMBTH20 C E C B TO-92 E B SOT-23 Mark: 3L NPN RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 49. Absolute Maximum Ratings*
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MPSH20
MMBTH20
MPSH20
OT-23
MMBTH20
Q100
500 uf 50v
npn, transistor, sc 107 b
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KSC1674
Abstract: RF POWER TRANSISTOR final 100MHz rf fairchild transistor 100mhz
Text: KSC1674 KSC1674 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz TYP. • High Power Gain : GPE=22dB at f=100MHz • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92
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KSC1674
600MHz
100MHz
KSC1674
RF POWER TRANSISTOR final 100MHz
rf fairchild transistor 100mhz
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KSC1674
Abstract: No abstract text available
Text: KSC1674 KSC1674 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz TYP. • High Power Gain : GPE=22dB at f=100MHz TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSC1674
600MHz
100MHz
KSC1674
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Untitled
Abstract: No abstract text available
Text: MMBTH24 NPN SURFACE MOUNT VHF/UHF TRANSISTOR SPICE MODEL: MMBTH24 Features • · · Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators High Current Gain Bandwidth Product Ideal for Mixer and RF Amplifier Applications with collector currents in the 100mA - 30 mA
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MMBTH24
100mA
OT-23
OT-23,
J-STD-020A
MIL-STD-202,
DS31034
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Untitled
Abstract: No abstract text available
Text: MMBTH24 NPN SURFACE MOUNT VHF/UHF TRANSISTOR SPICE MODEL: MMBTH24 Features • · · Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators High Current Gain Bandwidth Product Ideal for Mixer and RF Amplifier Applications with collector currents in the 100mA - 30 mA
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MMBTH24
100mA
OT-23
OT-23,
J-STD-020A
MIL-STD-202,
DS31034
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Untitled
Abstract: No abstract text available
Text: MMBTH10 NPN SURFACE MOUNT VHF/UHF TRANSISTOR Features • · · Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators High Current Gain Bandwidth Product Ideal for Mixer and RF Amplifier Applications with collector currents in the 100mA - 30 mA
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MMBTH10
100mA
OT-23
OT-23,
J-STD-020A
MIL-STD-202,
DS31031
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KSC2786
Abstract: 10.7 MHZ
Text: KSC2786 KSC2786 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz TYP. • High Power Gain : GPE=22dB at f=100MHz TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSC2786
600MHz
100MHz
O-92S
KSC2786
10.7 MHZ
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KSC2786
Abstract: No abstract text available
Text: KSC2786 KSC2786 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz TYP • High Power Gain : GPE=22dB at f=100MHz TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSC2786
600MHz
100MHz
O-92S
KSC2786
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Untitled
Abstract: No abstract text available
Text: MMBTH10 NPN SURFACE MOUNT VHF/UHF TRANSISTOR SPICE MODEL: MMBTH10 Features • · · Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators High Current Gain Bandwidth Product Ideal for Mixer and RF Amplifier Applications with collector currents in the 100mA - 30 mA
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MMBTH10
100mA
OT-23
OT-23,
J-STD-020A
MIL-STD-202,
DS31031
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KSC2786
Abstract: No abstract text available
Text: KSC2786 KSC2786 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz TYP. • High Power Gain : GPE=22dB at f=100MHz TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSC2786
600MHz
100MHz
O-92S
KSC2786
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ksc1674y
Abstract: GFE10 KSC1674C-YTA
Text: KSC1674 KSC1674 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz TYP. • High Power Gain : GPE=22dB at f=100MHz • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92
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KSC1674
600MHz
100MHz
KSC1674
KSC1674COTA
KSC1674YTA
ksc1674y
GFE10
KSC1674C-YTA
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Untitled
Abstract: No abstract text available
Text: SPICE MODEL: MMBTH10 MMBTH10 NPN SURFACE MOUNT VHF/UHF TRANSISTOR Features • Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators • • High Current Gain Bandwidth Product SOT-23 Ideal for Mixer and RF Amplifier Applications with collector
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MMBTH10
OT-23
AEC-Q101
J-STD-020C
MIL-STD-202,
DS31031
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Untitled
Abstract: No abstract text available
Text: SSf-IE Series W to tilOO M H //JO dB Sideband Rejection ! Quadrature Phased Sasaiimd Inputr PRINCIPAL SPECIFICATIONS Center Usable Model Frequency, Bandwidth, Number_ f0, MHz_ MHz SSF-1 E-*B 10 - 1000 10% of f0 For complete Model Number replace! * with desired Center Frequency in MHz.
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OCR Scan
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MIL-M-28837
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Untitled
Abstract: No abstract text available
Text: an A M P com pany E-Series Plug-In Mixer 1 -1000 MHz EMT-2 V 3 .0 0 Features R-3 T O P V IE 1 MOTE : PJNI ¡NUMBERS DO NOT APPEAR DIN] UN IT. FOR REFERENCE ONLY. • LO Power: +7 dBm • Up to +1 dBm RF PIN 5 IS CASE GROUND Specifications @ 25°c 0 .2 5 5 M AX
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Untitled
Abstract: No abstract text available
Text: R RF2418 F H MICRO DEVICES LOW CURRENT LNA/MIXER Typ ical A p plications • UHF Digital and Analog Receivers • Commercial and Consumer Systems • Digital Communication Systems • 4 3 3 MHz and 9 1 5 MHz ISM Band Receivers • Spread Spectrum Communication Systems • General Purpose Frequency Conversion
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RF2418
RF2418
LNAS21
LNAS11
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