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    IE 500 MIXER Search Results

    IE 500 MIXER Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    HMC1048ALC3B Analog Devices Mixer Visit Analog Devices Buy
    HMC260ALC3BTR-R5 Analog Devices Mixer Visit Analog Devices Buy
    HMC554ALC3B Analog Devices Mixers Visit Analog Devices Buy
    EV1HMC521ALC4 Analog Devices Mixers Visit Analog Devices Buy
    HMC554A-SX Analog Devices Mixers Visit Analog Devices Buy
    HMC329A-SX Analog Devices Mixers Visit Analog Devices Buy

    IE 500 MIXER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor marking 3em

    Abstract: 556 ITT MMBTH10 sot-23 Marking YRE
    Text: MMBTH10 NPN 1.1 GHz RF Transistor COLLECTOR 3 P b Lead Pb -Free 1 BASE 2 FEATURES Designed for VHF/UHF Amplifier Applications EMITTER and High Output VHF oscillators. High Current Gain Bandwidth product. Ideal for Mixer and RF Amplifier Application with Collector Current in the


    Original     		PDF MMBTH10 100mA OT-23 09-Feb-07 OT-23Package transistor marking 3em 556 ITT MMBTH10 sot-23 Marking YRE

    transistor C 245 b

    Abstract: No abstract text available
    Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C C B E TO-92 B SOT-23 E Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 mA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for


    Original     		PDF MPSH11 MMBTH11 MPSH11 OT-23 transistor C 245 b

    Untitled

    Abstract: No abstract text available
    Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C E TO-92 B B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for


    Original     		PDF MPSH11 MMBTH11 MPSH11 OT-23 MPSH11/MMBTH11,

    transistor 26

    Abstract: MMBTH11 MPSH11 Q100 Z-235 L1245 transistor t 270
    Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C E TO-92 B B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for


    Original     		PDF MPSH11 MMBTH11 MPSH11 OT-23 MPSH11/MMBTH11, transistor 26 MMBTH11 Q100 Z-235 L1245 transistor t 270

    100MHz oscillator

    Abstract: KTC2347
    Text: SEMICONDUCTOR KTC2347 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. TV UHF OSCILLATOR APPLICATION. TV VHF MIXER APPLICATION. C A B MAXIMUM RATING Ta=25ᴱ CHARACTERISTIC N SYMBOL RATING E K UNIT G 35 V Collector-Emitter Voltage


    Original     		PDF KTC2347 100MHz 100MHz oscillator KTC2347

    MPS-H20

    Abstract: npn, transistor, sc 107 b MV400 3 w RF POWER TRANSISTOR NPN
    Text: MPSH20 / MMBTH20 MPSH20 MMBTH20 C C B E TO-92 B SOT-23 E Mark: 3L NPN RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 49. Absolute Maximum Ratings*


    Original     		PDF MPSH20 MMBTH20 MPSH20 OT-23 MPS-H20 npn, transistor, sc 107 b MV400 3 w RF POWER TRANSISTOR NPN

    Untitled

    Abstract: No abstract text available
    Text: MMBTSC2787 NPN Silicon Epitaxial Planar Transistor for FM RF amp, mixer, osc, converter and IF amplifier. The transistor is subdivided into three groups M, L, and K according to its DC current gain. Features 1 Small output capacitance SOT-23 Plastic Package


    Original     		PDF MMBTSC2787 OT-23 100MHz

    10,7mhz

    Abstract: 2SC2787
    Text: ST 2SC2787 NPN Silicon Epitaxial Planar Transistor for FM RF amp, mixer, osc, converter and IF amplifier. The transistor is subdivided into three groups M, L, and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2787 100MHz 10,7mhz 2SC2787

    Untitled

    Abstract: No abstract text available
    Text: MMBTSC2787LT1 NPN Silicon Epitaxial Planar Transistor for FM RF amp, mixer, osc, converter and IF amplifier. The transistor is subdivided into three groups M, L, and K according to its DC current gain. Features 1 Small output capacitance SOT-23 Plastic Package


    Original     		PDF MMBTSC2787LT1 OT-23 100MHz

    10,7mhz

    Abstract: No abstract text available
    Text: MMBTSC2787LT1 NPN Silicon Epitaxial Planar Transistor for FM RF amp, mixer, osc, converter and IF amplifier. The transistor is subdivided into three groups M, L, and K according to its DC current gain. Features 1 Small output capacitance SOT-23 Plastic Package


    Original     		PDF MMBTSC2787LT1 OT-23 100MHz 10,7mhz

    Untitled

    Abstract: No abstract text available
    Text: MMBTSC2787 NPN Silicon Epitaxial Planar Transistor for FM RF amp, mixer, osc, converter and IF amplifier. The transistor is subdivided into three groups M, L, and K according to its DC current gain. Features 1 Small output capacitance SOT-23 Plastic Package


    Original     		PDF MMBTSC2787 OT-23 100MHz

    2SC2787

    Abstract: No abstract text available
    Text: ST 2SC2787 NPN Silicon Epitaxial Planar Transistor for FM RF amp, mixer, osc, converter and IF amplifier. The transistor is subdivided into three groups M, L, and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2787 100MHz 2SC2787

    2SC460B

    Abstract: 2SC460 2SC461 Diode BFE 2SC461B 2SC460A 2SC460C 2SC461C Hitachi DSA00234
    Text: 2SC460, 2SC461 Silicon NPN Epitaxial Planar Application • 2SC460 high frequency amplifier, mixer • 2SC461 VHF amplifier, mixer Outline TO-92 2 1. Emitter 2. Collector 3. Base 3 2 1 2SC460, 2SC461 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SC460


    Original     		PDF 2SC460, 2SC461 2SC460 2SC461 2SC460 2SC460B Diode BFE 2SC461B 2SC460A 2SC460C 2SC461C Hitachi DSA00234

    Untitled

    Abstract: No abstract text available
    Text: 2SC460, 2SC461 Silicon NPN Epitaxial Planar REJ03G0682-0200 Previous ADE-208-1046 Rev.2.00 Aug.10.2005 Application • 2SC460 high frequency amplifier, mixer • 2SC461 VHF amplifier, mixer Outline RENESAS Package code: PRSS0003DA-C (Package name: TO-92 (2)


    Original     		PDF 2SC460, 2SC461 REJ03G0682-0200 ADE-208-1046) 2SC460 2SC461 PRSS0003DA-C 2SC460

    10,7mhz

    Abstract: transistor a 92 2SC2787
    Text: ST 2SC2787 NPN Silicon Epitaxial Planar Transistor for FM RF amp, mixer, osc, converter and IF amplifier. The transistor is subdivided into three groups M, L, and K according to its DC current gain. On special request, these transistors manufactured in different pin configurations.


    Original     		PDF 2SC2787 100MHz 10,7mhz transistor a 92 2SC2787

    2SC460B

    Abstract: 2SC460 2SC461 2SC460CTZ 2SC461B 4.5-MHz IF 2SC460A 2SC460C PRSS0003DA-C
    Text: 2SC460, 2SC461 Silicon NPN Epitaxial Planar REJ03G0682-0200 Previous ADE-208-1046 Rev.2.00 Aug.10.2005 Application • 2SC460 high frequency amplifier, mixer • 2SC461 VHF amplifier, mixer Outline RENESAS Package code: PRSS0003DA-C (Package name: TO-92 (2)


    Original     		PDF 2SC460, 2SC461 REJ03G0682-0200 ADE-208-1046) 2SC460 2SC461 PRSS0003DA-C 2SC460 2SC460B 2SC460CTZ 2SC461B 4.5-MHz IF 2SC460A 2SC460C PRSS0003DA-C

    2SC460

    Abstract: 2SC461 2SC460B Hitachi DSA0076 2SC461B 2SC460A 2SC460C 2SC461C 2SC460 B
    Text: 2SC460, 2SC461 Silicon NPN Epitaxial Planar ADE-208-1046 Z 1st. Edition Mar. 2001 Application • 2SC460 high frequency amplifier, mixer • 2SC461 VHF amplifier, mixer Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC460, 2SC461 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC460, 2SC461 ADE-208-1046 2SC460 2SC461 2SC460 2SC460B Hitachi DSA0076 2SC461B 2SC460A 2SC460C 2SC461C 2SC460 B

    MPSH20

    Abstract: MMBTH20 Q100 500 uf 50v npn, transistor, sc 107 b
    Text: MPSH20 / MMBTH20 MPSH20 MMBTH20 C E C B TO-92 E B SOT-23 Mark: 3L NPN RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 49. Absolute Maximum Ratings*


    Original     		PDF MPSH20 MMBTH20 MPSH20 OT-23 MMBTH20 Q100 500 uf 50v npn, transistor, sc 107 b

    rf transistor mark code H1

    Abstract: CBVK741B019 F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 D3000
    Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for


    Original     		PDF MPSH11 MMBTH11 MPSH11 OT-23 rf transistor mark code H1 CBVK741B019 F63TNR MMBTH11 PN2222N Q100 Z-235 D3000

    CBVK741B019

    Abstract: F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 transistor 26
    Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for


    Original     		PDF MPSH11 MMBTH11 MPSH11 OT-23 CBVK741B019 F63TNR MMBTH11 PN2222N Q100 Z-235 transistor 26

    NTE229

    Abstract: No abstract text available
    Text: NTE229 Silicon NPN Transistor VHF Oscillator, Mixer, IF Amp Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V


    Original     		PDF NTE229 100MHz 45MHz NTE229

    BFT97

    Abstract: Siemens 1985 BFT65 bfr91a siemens BFQ64P BFT98T BFS55A bf254 BFR96S
    Text: S IE M E N S / SPCLt SEMICONDS ' ' ?QC D • fiS 3b 3E Q 0013325 1 ■ RF Transistors Type PNP= P NPN= N Typical Application epitaxial=E planar = PL E, PL Maximum Ratings Vcbo V VcEO (V) ^80 (V) (mA) fe ft (°C) 40 25 4 25 150 Plot (mW) (°C/W) 500 N Uncontrolled TV IF amplifier stages


    OCR Scan     		PDF BF199 BF240 BF241 BF254 BF255 BF414 BF420 BF420L BF421 BF421L BFT97 Siemens 1985 BFT65 bfr91a siemens BFQ64P BFT98T BFS55A BFR96S

    Untitled

    Abstract: No abstract text available
    Text: MERRIMAC IN D U S T R IE S IN C 4hE D bGDMb3^ OOGnbE 1 • r i m i hä Merrimac DMF-8A series DOUBLE BALANCED MIXERS High Level, Flatpack Models + 25 dBm Third Order Input Intercept Point 500 kHz to 2 GHz Frequency Range + 16 to +23 dBm LO Drive Range MERRIMAC offers a wide range of Double Balanced Mixers suitable for a variety of signal processing functions in the


    OCR Scan     		PDF

    KTC2347

    Abstract: No abstract text available
    Text: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTC2347 EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. TV UHF OSCILLATOR APPLICATION. TV VHF MIXER APPLICATION. MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF KTC2347 KTC2347