IHb si
Abstract: No abstract text available
Text: HIGH-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT with SYNCHRONOUS WRITE FEATURES: • • • • • • 65,535-words x 4-bit organization Address access time: 12/15 ns Read Data output latch for extended hold time Short Write Cycle input data and address valid time
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535-words
IDT10507
IDT100507
IDT101507
IDT10507,
IDT101507
144bit
ECL-100K
IHb si
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Untitled
Abstract: No abstract text available
Text: fcitegrated Oevlc« Tethnologr, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT with SYNCHRONOUS WRITE FEATURES: • 65,535-words x 4-bit organization • Address access time: 12/15 ns • Read Data output latch for extended hold time • Short Write Cycle input data and address valid time
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IDT10507
IDT100507
IDT101507
535-words
IDT10507,
IDT101507
144bit
ECL-10K
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Untitled
Abstract: No abstract text available
Text: ADVANCE HIGH-SPEED BiCMOS INFORMATION ECL STATIC RAM IDT 10507 256K 64K x 4-BIT IDT 100507 WITH SYNCHRONOUS WRITE FEATURES: DESCRIPTION: • 65,535-words x 4-bit organization • Address access time: 12/15 ns (max.) • Low power dissipation: 800mW (typ.)
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535-words
800mW
IDT10507
IDT100507
144-bit
ECL-10Kand
ECL-100K,
S12-76
IDT105
400mll)
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