Untitled
Abstract: No abstract text available
Text: Integrated Dual-Axis Gyro IDG-1004 GENERAL DESCRIPTION NOT RECOMMENDED FOR NEW DESIGNS. PLEASE REFER TO THE IDG-1215 FOR A FUNCTIONALLYUPGRADED PRODUCT The IDG-1004 is an integrated dual-axis angular rate sensor gyroscope that can be used for dead reckoning
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IDG-1004
IDG-1215
IDG-1004
DS-IDG-1004Q-00-01
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Untitled
Abstract: No abstract text available
Text: Integrated Dual-Axis Gyro IDG-1004 GENERAL DESCRIPTION FEATURES • • • • • • • • • The IDG-1004 is an integrated dual-axis angular rate sensor gyroscope . It uses InvenSense’s proprietary and patented MEMS technology with vertically driven,
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IDG-1004
IDG-1004
DS-IDG-1004A-00-02
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IDG 600
Abstract: IDG-600 IDG600 IDG 600 gyroscope VIBRATION SENSOR GYRO MEMS gyro sensor Invensense MEMS Gyroscope gyro applications of mems gyroscope
Text: Product Brief IDG-600 sensing your motions TM Integrated Dual-Axis Gyroscope 1 cm Actual Size APPLICATIONS • High Performance Motion Sensing Game Controllers • Pointing Devices, Multimedia Remotes, & Computer Mice FEATURES • • • • • • • •
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IDG-600
IDG 600
IDG-600
IDG600
IDG 600 gyroscope
VIBRATION SENSOR GYRO
MEMS gyro sensor
Invensense MEMS Gyroscope
gyro
applications of mems gyroscope
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Untitled
Abstract: No abstract text available
Text: EUPEC SBE D 3m]32*i7 ÜQQüSn IDG « U P E C T 600 F • ^ Z S -v Z 600 Typenreihe/Type range 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values 600.1300 V 600. 1300 V V drm Vrrm
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FLM5359-8C
Abstract: No abstract text available
Text: FLM5359-8C fujTtsu Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 39dBm Typ. • High Gain: G -j^B = 9.5dB (Typ.) • • • • High PAE: r iadd = 32% (Typ.) Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package
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39dBm
FLM5359-8C
FLM5359-8C
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Untitled
Abstract: No abstract text available
Text: F| .ftp-. FLM4450-18DA J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 9.5dB (Typ.) High PAE: riadd = 32% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 4.4 ~ 5.0GHz
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FLM4450-18DA
-45dBc
FLM4450-18DA
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FLM5964-4c
Abstract: No abstract text available
Text: p. .fjW-,. FLM5964-4C Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 36dBm Typ.) • • • • • High Gain: G-j^B = 9.0dB (Typ.) High PAE: riadd = 32% (Typ.) Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package
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FLM5964-4C
36dBm
FLM5359-4C
1100mA
FLM5964-4c
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0J02
Abstract: No abstract text available
Text: SBE D EUPEC 3m]32*i7 Ü Q Q ü S n IDG « U P E C T 600 F • ^ Z S -v Z O 600 Typenreihe/Type range 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values 600.1300 V 600. 1300 V V drm
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FLM6472-12D
Abstract: SCL 1058 FLM6472-12DA
Text: FLM6472-12DA F| Internally Matched Power GaAs FETs I FEATURES • • • • • • • High Output Power: P-idg = 41 dBm Typ. High Gain: = 7.5dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q
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FLM6472-12DA
-45dBc
30dBm
FLM6472-12DA
FLM6472-12D
SCL 1058
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3742-18DA
Abstract: FLM3742-18DA ag 1686
Text: FLM3742-18DA F lltrn ill J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 10.5dB (Typ.) High PAE: riac|d = 33% (Typ.) Low IM3 = -45dBc@Po =31.5dBm Broad Band: 3.7 ~ 4.2GHz
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FLM3742-18DA
-45dBc
FLM3742-18DA
3742-18DA
ag 1686
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cd 1691 cp
Abstract: Y3015
Text: F| .fjU-. FLM5964-12DA J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 41 dBm Typ. High Gain: G -j^B = 9.5dB (Typ.) High PAE: r iadd = 35% (Typ.) Low IM 3 = -45dBc@Po = 30dBm Broad Band: 5.9 ~ 6.4GHz
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FLM5964-12DA
-45dBc
30dBm
FLM5964-12DA
3100mA
cd 1691 cp
Y3015
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FLM1414-2
Abstract: microwave databook FUJITSU MICROWAVE
Text: FLM1414-2 c° FUJITSU Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 33.5dBm Typ. • High Gain: G-j^B = 5.0dB (Typ.) • High PAE: r iadd = 24% (Typ.) • Broad Band: 14.0 ~ 14.5GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed
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FLM1414-2
FLM1414-2
650mA
microwave databook
FUJITSU MICROWAVE
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FLL300IL-1
Abstract: microwave databook
Text: F,ifm-i • FLL300IL-1, FLL300IL-2, FLL300IL-3 I 1jU L-Band Medium & High Power GaAs FETs FEATURES • High Output Power: P-idg = 44.5dBm Typ. • High Gain: G -j^B = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) • High PAE: r iadd = 44% (Typ.) • Proven Reliability
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FLL300IL-1,
FLL300IL-2,
FLL300IL-3
FLL300IL-2)
FLL300IL-3
FLL300IL-1
FLL300IL-1
microwave databook
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Untitled
Abstract: No abstract text available
Text: n FLM5964-6D Internally Matched Power GaAs FETs . I 1jU FEATURES • High Output Power: P-idg = 38.0dBm Typ. • High Gain: G -j^B = 10.0dB (Typ.) • High PAE: r iadd = 36% (Typ.) • Low IM3 = -45dBc@Po = 27dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q
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FLM5964-6D
-45dBc
27dBm
FLM5964-6D
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FLM5964-18DA
Abstract: 5964-18DA 5964-18D
Text: FLM5964-18DA F| if m - i • I Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G -j^B = 8.5dB (Typ.) High PAE: r iadd = 31% (Typ.) Low IM 3 = -45dBc@Po = 31.5dBm Broad Band: 5.9 ~ 6.4GHz
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FLM5964-18DA
-45dBc
5964-18D
FLM5964-18DA
5964-18DA
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U/25/20/TN26/15/850/FLM6472-18DA
Abstract: No abstract text available
Text: FLM6472-18DA F| I Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 30% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q
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FLM6472-18DA
-45dBc
FLM6472-18DA
VD-164
U/25/20/TN26/15/850/FLM6472-18DA
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FLM3742-25DA
Abstract: No abstract text available
Text: F|J ,. FLM3742-25DA Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G -j^B = 10.5dB (Typ.) High PAE: r iadd = 36% (Typ.) Low IM 3 = -45dBc@Po = 32dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q
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FLM3742-25DA
44dBm
-45dBc
32dBm
FLM3742-25DA
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FLM5964-25DA
Abstract: CS 5800
Text: lîrTCI FLM5964-25DA r UJI1bU Internally Matched Power GaAs F E Ts FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G -j^B = 8.5dB (Typ.) High PAE: r iadd = 33% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 5.9 ~ 6.4GHz
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FLM5964-25DA
44dBm
-45dBc
32dBm
FLM5964-25DA
CS 5800
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FLM6472-25D
Abstract: No abstract text available
Text: F|.9J^., FLM6472-25DA Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 32% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q
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FLM6472-25DA
44dBm
-45dBc
32dBm
Te298
FLM6472-25D
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GaAs FETs
Abstract: FLM5964-4D
Text: F|.fjU. FLM5964-4D J Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 36dBm Typ. • High Gain: G -j^B = 9.0dB (Typ.) • High PAE: r iadd = 31% (Typ.) • Low IM3 = -45dBc@Po = 25dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q
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FLM5964-4D
36dBm
-45dBc
25dBm
FLM5359-4D
GaAs FETs
FLM5964-4D
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dS 3202
Abstract: No abstract text available
Text: F|.S .,. FLM5964-35DA Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 45.5dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 35% (Typ.) Low IM3 = -45dBc@Po = 34.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q
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FLM5964-35DA
-45dBc
FLM5964-35DA
8000mA
dS 3202
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FLM5964
Abstract: No abstract text available
Text: n FLM5964-8D Internally Matched Power GaAs F E Ts . I FEATURES • High Output Power: P-idg = 39.0dBm Typ. • High Gain: G -j^B = 8.0dB (Typ.) • High PAE: r iadd = 30% (Typ.) • Low IM 3 = -45dBc@Po = 28dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q
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FLM5964-8D
-45dBc
28dBm
FLM5964-8D
FLM5964
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FLM4450-25D
Abstract: FUJI GaAs FET 25Q 328 FLM4450-25DA
Text: n FLM4450-25DA Internally Matched Power GaAs F E Ts . I FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G-j^B = 9.5dB (Typ.) High PAE: riadd = 35% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q
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FLM4450-25DA
44dBm
-45dBc
32dBm
FLM4450-25DA
FLM4450-25D
FUJI GaAs FET
25Q 328
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q 1363
Abstract: No abstract text available
Text: p.fjW,. FLM5359-4C Internally M a tc h e d P o w e r G aA s F E T s FEATURES • High Output Power: P-idg = 36dBm Typ.) • High Gain: G -j^B = 10.5dB (Typ.) • • • • High PAE: r iadd = 33% (Typ.) Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Q
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FLM5359-4C
36dBm
FLM5359-4C
q 1363
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