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    IDG 600 Search Results

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    IDG 600 Price and Stock

    Texas Instruments TLV6002IDGKT

    Operational Amplifiers - Op Amps 1Mhz, Low Power Op Amp
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TLV6002IDGKT 12,770
    • 1 $0.81
    • 10 $0.573
    • 100 $0.518
    • 1000 $0.491
    • 10000 $0.472
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    Texas Instruments TLV6002IDGKR

    Operational Amplifiers - Op Amps Dual, 5.5-V, 1-MHz, RRIO operational amplifier 8-VSSOP -40 to 125
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TLV6002IDGKR 6,478
    • 1 $0.61
    • 10 $0.39
    • 100 $0.316
    • 1000 $0.29
    • 10000 $0.24
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    SMC Corporation of America IDG60-04

    MEMBRANE AIR DRYER, IDG SERIES | SMC Corporation IDG60-04
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    RS IDG60-04 Bulk 5 Weeks 1
    • 1 $1285.72
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    SMC Corporation of America IDG60-03

    MEMBRANE AIR DRYER, IDG SERIES | SMC Corporation IDG60-03
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    RS IDG60-03 Bulk 5 Weeks 1
    • 1 $1285.71
    • 10 $1285.71
    • 100 $1285.71
    • 1000 $1285.71
    • 10000 $1285.71
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    SMC Corporation of America IDG60-04B

    MEMBRANE AIR DRYER, IDG SERIES | SMC Corporation IDG60-04B
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    RS IDG60-04B Bulk 5 Weeks 1
    • 1 $1307.14
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    IDG 600 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Integrated Dual-Axis Gyro IDG-1004 GENERAL DESCRIPTION NOT RECOMMENDED FOR NEW DESIGNS. PLEASE REFER TO THE IDG-1215 FOR A FUNCTIONALLYUPGRADED PRODUCT The IDG-1004 is an integrated dual-axis angular rate sensor gyroscope that can be used for dead reckoning


    Original     		IDG-1004 IDG-1215 IDG-1004 DS-IDG-1004Q-00-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: Integrated Dual-Axis Gyro IDG-1004 GENERAL DESCRIPTION FEATURES • • • • • • • • • The IDG-1004 is an integrated dual-axis angular rate sensor gyroscope . It uses InvenSense’s proprietary and patented MEMS technology with vertically driven,


    Original     		IDG-1004 IDG-1004 DS-IDG-1004A-00-02 PDF

    IDG 600

    Abstract: IDG-600 IDG600 IDG 600 gyroscope VIBRATION SENSOR GYRO MEMS gyro sensor Invensense MEMS Gyroscope gyro applications of mems gyroscope
    Text: Product Brief IDG-600 sensing your motions TM Integrated Dual-Axis Gyroscope 1 cm Actual Size APPLICATIONS • High Performance Motion Sensing Game Controllers • Pointing Devices, Multimedia Remotes, & Computer Mice FEATURES • • • • • • • •


    Original     		IDG-600 IDG 600 IDG-600 IDG600 IDG 600 gyroscope VIBRATION SENSOR GYRO MEMS gyro sensor Invensense MEMS Gyroscope gyro applications of mems gyroscope PDF

    Untitled

    Abstract: No abstract text available
    Text: EUPEC SBE D 3m]32*i7 ÜQQüSn IDG « U P E C T 600 F • ^ Z S -v Z 600 Typenreihe/Type range 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values 600.1300 V 600. 1300 V V drm Vrrm


    OCR Scan     		PDF

    FLM5359-8C

    Abstract: No abstract text available
    Text: FLM5359-8C fujTtsu Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 39dBm Typ. • High Gain: G -j^B = 9.5dB (Typ.) • • • • High PAE: r iadd = 32% (Typ.) Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package


    OCR Scan     		39dBm FLM5359-8C FLM5359-8C PDF

    Untitled

    Abstract: No abstract text available
    Text: F| .ftp-. FLM4450-18DA J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 9.5dB (Typ.) High PAE: riadd = 32% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 4.4 ~ 5.0GHz


    OCR Scan     		FLM4450-18DA -45dBc FLM4450-18DA PDF

    FLM5964-4c

    Abstract: No abstract text available
    Text: p. .fjW-,. FLM5964-4C Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 36dBm Typ.) • • • • • High Gain: G-j^B = 9.0dB (Typ.) High PAE: riadd = 32% (Typ.) Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package


    OCR Scan     		FLM5964-4C 36dBm FLM5359-4C 1100mA FLM5964-4c PDF

    0J02

    Abstract: No abstract text available
    Text: SBE D EUPEC 3m]32*i7 Ü Q Q ü S n IDG « U P E C T 600 F • ^ Z S -v Z O 600 Typenreihe/Type range 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values 600.1300 V 600. 1300 V V drm


    OCR Scan     		PDF

    FLM6472-12D

    Abstract: SCL 1058 FLM6472-12DA
    Text: FLM6472-12DA F| Internally Matched Power GaAs FETs I FEATURES • • • • • • • High Output Power: P-idg = 41 dBm Typ. High Gain: = 7.5dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM6472-12DA -45dBc 30dBm FLM6472-12DA FLM6472-12D SCL 1058 PDF

    3742-18DA

    Abstract: FLM3742-18DA ag 1686
    Text: FLM3742-18DA F lltrn ill J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 10.5dB (Typ.) High PAE: riac|d = 33% (Typ.) Low IM3 = -45dBc@Po =31.5dBm Broad Band: 3.7 ~ 4.2GHz


    OCR Scan     		FLM3742-18DA -45dBc FLM3742-18DA 3742-18DA ag 1686 PDF

    cd 1691 cp

    Abstract: Y3015
    Text: F| .fjU-. FLM5964-12DA J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 41 dBm Typ. High Gain: G -j^B = 9.5dB (Typ.) High PAE: r iadd = 35% (Typ.) Low IM 3 = -45dBc@Po = 30dBm Broad Band: 5.9 ~ 6.4GHz


    OCR Scan     		FLM5964-12DA -45dBc 30dBm FLM5964-12DA 3100mA cd 1691 cp Y3015 PDF

    FLM1414-2

    Abstract: microwave databook FUJITSU MICROWAVE
    Text: FLM1414-2 c° FUJITSU Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 33.5dBm Typ. • High Gain: G-j^B = 5.0dB (Typ.) • High PAE: r iadd = 24% (Typ.) • Broad Band: 14.0 ~ 14.5GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed


    OCR Scan     		FLM1414-2 FLM1414-2 650mA microwave databook FUJITSU MICROWAVE PDF

    FLL300IL-1

    Abstract: microwave databook
    Text: F,ifm-i • FLL300IL-1, FLL300IL-2, FLL300IL-3 I 1jU L-Band Medium & High Power GaAs FETs FEATURES • High Output Power: P-idg = 44.5dBm Typ. • High Gain: G -j^B = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) • High PAE: r iadd = 44% (Typ.) • Proven Reliability


    OCR Scan     		FLL300IL-1, FLL300IL-2, FLL300IL-3 FLL300IL-2) FLL300IL-3 FLL300IL-1 FLL300IL-1 microwave databook PDF

    Untitled

    Abstract: No abstract text available
    Text: n FLM5964-6D Internally Matched Power GaAs FETs . I 1jU FEATURES • High Output Power: P-idg = 38.0dBm Typ. • High Gain: G -j^B = 10.0dB (Typ.) • High PAE: r iadd = 36% (Typ.) • Low IM3 = -45dBc@Po = 27dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM5964-6D -45dBc 27dBm FLM5964-6D PDF

    FLM5964-18DA

    Abstract: 5964-18DA 5964-18D
    Text: FLM5964-18DA F| if m - i • I Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G -j^B = 8.5dB (Typ.) High PAE: r iadd = 31% (Typ.) Low IM 3 = -45dBc@Po = 31.5dBm Broad Band: 5.9 ~ 6.4GHz


    OCR Scan     		FLM5964-18DA -45dBc 5964-18D FLM5964-18DA 5964-18DA PDF

    U/25/20/TN26/15/850/FLM6472-18DA

    Abstract: No abstract text available
    Text: FLM6472-18DA F| I Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 30% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM6472-18DA -45dBc FLM6472-18DA VD-164 U/25/20/TN26/15/850/FLM6472-18DA PDF

    FLM3742-25DA

    Abstract: No abstract text available
    Text: F|J ,. FLM3742-25DA Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G -j^B = 10.5dB (Typ.) High PAE: r iadd = 36% (Typ.) Low IM 3 = -45dBc@Po = 32dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM3742-25DA 44dBm -45dBc 32dBm FLM3742-25DA PDF

    FLM5964-25DA

    Abstract: CS 5800
    Text: lîrTCI FLM5964-25DA r UJI1bU Internally Matched Power GaAs F E Ts FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G -j^B = 8.5dB (Typ.) High PAE: r iadd = 33% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 5.9 ~ 6.4GHz


    OCR Scan     		FLM5964-25DA 44dBm -45dBc 32dBm FLM5964-25DA CS 5800 PDF

    FLM6472-25D

    Abstract: No abstract text available
    Text: F|.9J^., FLM6472-25DA Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 32% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM6472-25DA 44dBm -45dBc 32dBm Te298 FLM6472-25D PDF

    GaAs FETs

    Abstract: FLM5964-4D
    Text: F|.fjU. FLM5964-4D J Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 36dBm Typ. • High Gain: G -j^B = 9.0dB (Typ.) • High PAE: r iadd = 31% (Typ.) • Low IM3 = -45dBc@Po = 25dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM5964-4D 36dBm -45dBc 25dBm FLM5359-4D GaAs FETs FLM5964-4D PDF

    dS 3202

    Abstract: No abstract text available
    Text: F|.S .,. FLM5964-35DA Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 45.5dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 35% (Typ.) Low IM3 = -45dBc@Po = 34.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM5964-35DA -45dBc FLM5964-35DA 8000mA dS 3202 PDF

    FLM5964

    Abstract: No abstract text available
    Text: n FLM5964-8D Internally Matched Power GaAs F E Ts . I FEATURES • High Output Power: P-idg = 39.0dBm Typ. • High Gain: G -j^B = 8.0dB (Typ.) • High PAE: r iadd = 30% (Typ.) • Low IM 3 = -45dBc@Po = 28dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM5964-8D -45dBc 28dBm FLM5964-8D FLM5964 PDF

    FLM4450-25D

    Abstract: FUJI GaAs FET 25Q 328 FLM4450-25DA
    Text: n FLM4450-25DA Internally Matched Power GaAs F E Ts . I FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G-j^B = 9.5dB (Typ.) High PAE: riadd = 35% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM4450-25DA 44dBm -45dBc 32dBm FLM4450-25DA FLM4450-25D FUJI GaAs FET 25Q 328 PDF

    q 1363

    Abstract: No abstract text available
    Text: p.fjW,. FLM5359-4C Internally M a tc h e d P o w e r G aA s F E T s FEATURES • High Output Power: P-idg = 36dBm Typ.) • High Gain: G -j^B = 10.5dB (Typ.) • • • • High PAE: r iadd = 33% (Typ.) Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM5359-4C 36dBm FLM5359-4C q 1363 PDF