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    Untitled

    Abstract: No abstract text available
    Text: IDD235 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V) I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		PDF IDD235

    2sc630

    Abstract: KT817B IDB434 2SD130 2SB1003 2N3167 MOTOROLA 2sd1369 bd57 2SC790R 2N319
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V PD (BR)CEO Max hFE »T (V) (W) Min (Hz) r •CBO Max Max (A) (8) (CE)ut Max (Ohms) Top«r Max (°C) Package Style D vices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15


    Original     		PDF KT817A 2SD91 IDB1023 IDD1413 2SB1003 2SD1369 BDY34 2N3632 See00n 2sc630 KT817B IDB434 2SD130 2N3167 MOTOROLA bd57 2SC790R 2N319

    CXK77R1882AGB

    Abstract: CXK77R3682AGB IDD235
    Text: SONY CXK77R3682AGB / CXK77R1882AGB 8Mb Double Data Rate HSTL High Speed Synchronous SRAMs 256K x 36 or 512K x 18 Organization 35/39/42 Preliminary Description The CXK77R3682AGB (organized as 262,144 words by 36 bits) and the CXK77R1882AGB (organized as 524,288 words by


    Original     		PDF CXK77R3682AGB CXK77R1882AGB CXK77R3682AGB CXK77R1882AGB IDD235