10E02
Abstract: S1643
Text: NTMKB4893N Power MOSFET 25 V, 87 A, Single N−Channel, ICEPAK Features • • • • • • • Low Package Inductance Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses
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NTMKB4893N
NTMKB4893N/D
10E02
S1643
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marking 2x
Abstract: No abstract text available
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ÍÍ ICEPAK 6.3x4.9 − E PAD CASE 145AB−01 ISSUE O SCALE 2:1 DATE 04 NOV 2008 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. COPLANARITY APPLIES TO THE FLANGES
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145AB-01
145AB
marking 2x
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Untitled
Abstract: No abstract text available
Text: NTMKB4893N Power MOSFET 25 V, 87 A, Single N−Channel, ICEPAK Features • • • • • • • Low Package Inductance Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses
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NTMKB4893N
NTMKB4893N/D
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Untitled
Abstract: No abstract text available
Text: NTMKB4896N Power MOSFET 30 V, 70 A, Single N−Channel, ICEPAK Features • • • • • • • Low Package Inductance Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses
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NTMKB4896N
NTMKB4896N/D
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Untitled
Abstract: No abstract text available
Text: NTMKB4895N Power MOSFET 30 V, 82 A, Single N−Channel, ICEPAK Features • • • • • • • Low Package Inductance Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses
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NTMKB4895N
145AD
B4895
NTMKB4895N/D
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Untitled
Abstract: No abstract text available
Text: NTMKE4890N Power MOSFET 30 V, 155 A, Single N−Channel, ICEPAK Features • • • • • • • Low Package Inductance Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses
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NTMKE4890N
145AB
E4890
NTMKE4890N/D
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VDSS-25V
Abstract: S7130 mx 2910 62a500
Text: NTMKE4894N Power MOSFET 25 V, 160 A, Single N−Channel, ICEPAK Features • • • • • • • Low Package Inductance Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses
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NTMKE4894N
145AB
NTMKE4894N/D
VDSS-25V
S7130
mx 2910
62a500
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145AA
Abstract: marking 2x
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ÍÍ ICEPAK 6.3x4.9 − C PAD CASE 145AA−01 ISSUE O DATE 11 NOV 2008 SCALE 2:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. COPLANARITY APPLIES TO THE FLANGES
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145AA-01
145AA
145AA
marking 2x
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EE-40
Abstract: ez-ice ADSP-21060 WICE060 0x390
Text: Engineer To Engineer Note EE-40 Notes on using Analog Devices’ DSP, audio, & video components from the Computer Products Division Phone: 800 ANALOG-D or (781) 461-3881, FAX: (781) 461-3010, EMAIL: dsp.support@analog.com Using the SHARC ICEPAK with the SHARC EZ-LAB board.
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EE-40
WICE060
2106x
ADSP-21060.
EE-40
ez-ice
ADSP-21060
0x390
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Untitled
Abstract: No abstract text available
Text: NTMKE4894N Power MOSFET 25 V, 160 A, Single N−Channel, ICEPAKt Features • • • • • • Low Package Inductance Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses
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NTMKE4894N
NTMKE4894N/D
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AND8405
Abstract: laser diode lifetime gold embrittlement "gold embrittlement" IcePak
Text: AND8405 Board Mounting Considerations for ICEPaK Packages Prepared by: Phillip Celaya ON Semiconductor http://onsemi.com APPLICATION NOTE Introduction Power management devices have become very critical to system applications. With the need to use FET devices to
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AND8405
AND8405/D
AND8405
laser diode lifetime
gold embrittlement
"gold embrittlement"
IcePak
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Untitled
Abstract: No abstract text available
Text: NTMKE4894N Power MOSFET 25 V, 160 A, Single N−Channel, ICEPAK Features • • • • • • • Low Package Inductance Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses
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NTMKE4894N
145AB
E4894
NTMKE4894N/D
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Untitled
Abstract: No abstract text available
Text: NTMKE4891N Power MOSFET 25 V, 129 A, Single N−Channel, ICEPAK Features • • • • • • • Low Package Inductance Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses
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NTMKE4891N
145AE
E4891
NTMKE4891N/D
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C4890
Abstract: 145AA
Text: NTMKC4890N Power MOSFET 30 V, 155 A, Single N−Channel, ICEPAK Features • • • • • • • Low Package Inductance Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses
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NTMKC4890N
145AA
NTMKC4890N/D
C4890
145AA
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NTMKE4890N
Abstract: No abstract text available
Text: NTMKE4890N Power MOSFET 30 V, 147 A, Single N−Channel, ICEPAKt Features • • • • • • • Low Package Inductance Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes SyncFET Schottky Diode Optimized Gate Charge to Minimize Switching Losses
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NTMKE4890N
NTMKE4890N/D
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2088AB* led matrix
Abstract: led matrix 2088ab 2088AB led matrix led matrix 8x8 mini circuits 2088AB matrix 2088ab Ultrasonic humidifier circuit torque settings for metric cap head screws TRANSISTOR C 6090 EQUIVALENT CV 7311
Text: Soldering and Mounting Techniques Reference Manual SOLDERRM/D Rev. 3, May−2006 SCILLC, 2006 “All Rights Reserved” SOLDERRM FULLPAK, ICePAK, MicroIntegration, MicroLeadless, MOSORB, MiniMOSORB, and POWERTAP are trademarks of Semiconductor Components Industries, LLC SCILLC . Cho−Therm is a registered trademark of Chromerics, Inc. Grafoil is a registered trademark of
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May-2006
2088AB* led matrix
led matrix 2088ab
2088AB led matrix
led matrix 8x8 mini circuits
2088AB
matrix 2088ab
Ultrasonic humidifier circuit
torque settings for metric cap head screws
TRANSISTOR C 6090 EQUIVALENT
CV 7311
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e4892
Abstract: NTMKE4892N
Text: NTMKE4892N Power MOSFET 30 V, 126 A, Single N−Channel, ICEPAK Features • • • • • • • Low Package Inductance Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses
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NTMKE4892N
145AE
E4892
NTMKE4892N/D
e4892
NTMKE4892N
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Untitled
Abstract: No abstract text available
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ÍÍ ÍÍ ICEPAK 4.8x3.8 − B PAD CASE 145AC−01 ISSUE O DATE 04 NOV 2008 SCALE 2:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. COPLANARITY APPLIES TO THE FLANGES
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145AC-01
145AC
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Untitled
Abstract: No abstract text available
Text: NTMKB4896N Power MOSFET 30 V, 70 A, Single N−Channel, ICEPAK Features • • • • • • • Low Package Inductance Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses
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NTMKB4896N
145AC
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matrix 2088ab
Abstract: 2088AB led matrix torque settings chart for metric stainless bolts led matrix 2088ab 2088AB* led matrix PHASE CONTROL THYRISTOR MODULE TT 56 N SIL-PAD to-247 Ultrasonic humidifier circuit full wave BRIDGE RECTIFIER 1044 2088AB
Text: Soldering and Mounting Techniques Reference Manual SOLDERRM/D Rev. 5, January−2007 SCILLC, 2007 “All Rights Reserved” SOLDERRM FULLPAK, ICePAK, MicroIntegration, MicroLeadless, MOSORB, MiniMOSORB, and POWERTAP are trademarks of Semiconductor Components Industries, LLC SCILLC . Cho−Therm is a registered trademark of Chromerics, Inc. Grafoil is a registered trademark of
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matrix 2088ab
2088AB led matrix
torque settings chart for metric stainless bolts
led matrix 2088ab
2088AB* led matrix
PHASE CONTROL THYRISTOR MODULE TT 56 N
SIL-PAD to-247
Ultrasonic humidifier circuit
full wave BRIDGE RECTIFIER 1044
2088AB
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Power MOSFET Cross Reference Guide
Abstract: Cross Reference power MOSFET pm3002 *3004 N and P
Text: TMOS Multiple Chip Products CASE 806-04 T he ICePAK le ad fra m e is versa tile and can be used to co n stru ct m any different custom or sem i-custom circuits — 2 pad H -bridge , 3 pad (3-phase or tri-die), and 4 pad (quad die). C o ntact you r local M otorola sales office for you r copy of the ICePAK
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MT15FR45SÙ
MT50BY45
125x6
400x2
Power MOSFET Cross Reference Guide
Cross Reference power MOSFET
pm3002
*3004 N and P
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Case 806-05
Abstract: MPM3008 IcePak 625 1334 diode
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS ICePAK Pow er Module M PM 3008 Motorola Preferred Device P-Channel and N-Channel Power MOSFETs in Dual Half-Bridge with Schottky Rectifiers TMOS POWER MOSFET H-BRIDGE 16 AMPERES 60 VOLTS This advanced com plem entary T M O S Power M O S F E T H Bridge with Schottky Rectifiers in th e ICePAK package is
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MPM3003
Abstract: MC33035 ss43 hall RGP 30 H1 MOTOROLA brushless dc controller schematic Ss54 DIODE drive control damp motor Transistor sS41 MC33033 TJ3 diode bridge
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA MPM3003 ICePAK Power M odule P-Channel and N-Channel Power M OSFET in a Three-Phase Bridge Configuration M otorola Preferred D evice The MPM3003 is a three-phase bridge power circuit packaged in the new power SIP called the ICePAK package. The upper legs of the bridge consist of three P-Channel
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MPM3003
b3b7254
MC33035
ss43 hall
RGP 30 H1
MOTOROLA brushless dc controller schematic
Ss54 DIODE
drive control damp motor
Transistor sS41
MC33033
TJ3 diode bridge
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MPM3002
Abstract: K4004 DIODE MOTOROLA B34 Case 806-05 AN569 Active resistance 362 MOSFET DMS-100 temperature sensefet
Text: MOTOROLA SC XSTRS/R F ME D • b3b7254 DGTÔ454 3D1 ■ PIOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS ICePAK Power Module P-Channel Power M O SFET and N-Channel SEN SEFET Product in a Full H-Bridge Configuration The MPM3002 is a H-Bridge power circuit with lossless current sensing capability. The
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MPM3002
MPM3002
K4004
DIODE MOTOROLA B34
Case 806-05
AN569
Active resistance
362 MOSFET
DMS-100 temperature
sensefet
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