DS1210N
Abstract: No abstract text available
Text: 19-6294; Rev 6/12 DS1210 Nonvolatile Controller Chip FEATURES • • PIN ASSIGNMENT Converts CMOS RAMs into Nonvolatile Memories Unconditionally Write Protects when VCC is Out-of-Tolerance Automatically Switches to Battery when
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DS1210
16-Pin
100nA
DS1210
DS1210N
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DS1210
Abstract: DS1210S DS1610 DS1610S ICC01
Text: DS1610 DS1610 Partitioned NV Controller FEATURES PIN ASSIGNMENT • Converts CMOS RAMs into nonvolatile memories • SOIC version is pin compatible with the Dallas Semiconductor DS1210 NV Controller • Unconditionally write protects all of memory when Vcc
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DS1610
DS1210
16-Pin
DS1610
16-PIN
DS1210S
DS1610S
ICC01
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switch mode power supply
Abstract: DS1236 DS1236-5 DS1336 ICC01 ST 12 55C
Text: DS1236 DS1236 MicroManager Chip FEATURES PIN ASSIGNMENT • Holds microprocessor in check during power transients 1 16 RST VCCO 2 15 RST VCC 3 14 PBRST VBAT 1 16 RST GND 4 13 CEI VCCO 2 15 • Warns microprocessor of an impending power failure VCC PF 12 3
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DS1236
switch mode power supply
DS1236
DS1236-5
DS1336
ICC01
ST 12 55C
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NM29N16S
Abstract: C1996 ICC01 NM29N16 NM29N16R
Text: NM29N16 16 MBit 2M x 8 Bit CMOS NAND FLASH E2PROM General Description Features The NM29N16 is a 16 Mbit (2 Mbyte) NAND FLASH The device is organized as an array of 512 blocks each consisting of 16 pages Each page contains 264 bytes All commands and data are sent through eight I O pins To read
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NM29N16
NM29N16
NM29N16S
C1996
ICC01
NM29N16R
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ds1210s
Abstract: No abstract text available
Text: DS1210 Nonvolatile Controller Chip www.maxim-ic.com FEATURES § § § § § § § § § § § Converts CMOS RAMs into Nonvolatile Memories Unconditionally Write Protects when VCC is Out-of-Tolerance Automatically Switches to Battery when Power-Fail Occurs
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DS1210
100nA
16-Pin
DS1210
300-mil)
DS1210SN+
56-G4009-001B
W16-11*
ds1210s
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NM29N16ES
Abstract: C1996 ICC01 NM29N16E
Text: NM29N16E 16 MBit 2M x 8 Bit CMOS NAND FLASH E2PROM General Description Features The NM29N16E is a 16 Mbit (2 Mbyte) NAND FLASH which operates over the industrial (b40 C to a 85 C) temperature range The device is organized as an array of 512 blocks each consisting of 16 pages Each page contains 264 bytes
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NM29N16E
NM29N16E
NM29N16ES
C1996
ICC01
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Untitled
Abstract: No abstract text available
Text: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - TC57256AD-12,-120,-150 32 , 768 W O R D x 8 B I T C M O S UV ERASABLE A N D ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY IDESCRIPTIONI The TC57256AD is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electri
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TC57256AD-12
TC57256AD
120ns,
30mA/8
TC57256AD.
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TMM24256P
Abstract: AF150 TC54256P TTL af tc54256ap
Text: TOSHIBA MOS MEMORY PRODOCTS TC54256AP/AF-150 DESCRIPTION The TC54256AP/AF is a 32,768 wo r d x 8 bit one time programmable read only memory, and molded in a 28 pin plastic package. The TC54256AP/AF's access time is 150ns and has low power standby mode which reduces the power dissipation without increasing access
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TC54256AP/AF-150
TC54256AP/AF
150ns
TC57256AD
30mA/6
150ns
TC54256AP
TMM24256P
AF150
TC54256P
TTL af
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DS1238
Abstract: DS1238-5 DS123S DS1336 MAX691
Text: DALLAS SEMICONDUCTOR PIN ASSIGNMENT FEATURES • Holds microprocessor in check during power transients • Halts and restarts an out-of-control microprocessor • Warns microprocessor of an impending power failure •C7 [ 1 16 ] vcco[ 2 15 ] RST v c c [ 3
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DS1238
DS1238-5
2bmi30
DS1238
DS1238-5
DS123S
DS1336
MAX691
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Untitled
Abstract: No abstract text available
Text: D S 1 31 4 PRELIMINARY DS1314 3V Nonvolatile Controller with Lithium Battery Monitor DALLAS SEMICONDUCTOR FEATURE PIN ASSIGNMENT • Converts CMOS SRAM into nonvolatile memory • Unconditionally write-protects SRAM when Vcc is out of tolerance ^ ^cci VccoOC
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DS1314
DS1314
Q01bb70
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Untitled
Abstract: No abstract text available
Text: DS1236 P R E L IM IN A R Y DALLAS SEMICONDUCTOR FEATURES • Holds microprocessor in check during power transients • Halts and restarts an out-of-control microprocessor • Monitors push-button for external override • Warns microprocessor of an impending
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DS1236
DS1236-5
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8a21
Abstract: ba1s F2480 A12F TH50VSF2480AASB TH50VSF2481AASB a19t
Text: SFP- TOSHIBA Multi Chip Package SRAM & FLASH Memory 4M BIT SRAM X 8/ X16 16M BIT FLASH ( X 8/X 16) Data Sheet TOSHIBA TH50VSF2480/2481AASB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI CHIP PACKAGE DESCRIPTION
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F2480/2481
TH50VSF2480/2481AASB
304-bits
216-bits
65-pin
P-LFBGA65-1209-0
8a21
ba1s
F2480
A12F
TH50VSF2480AASB
TH50VSF2481AASB
a19t
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Untitled
Abstract: No abstract text available
Text: PIN ASSIGNMENT FEATURES • Provides Real Time Clock: - Counts seconds, minutes, hours, date of the month, month, day of the week, and year with leap year compensation valid up to 2100 - Power control circuitry supports system power on from day/time alarm
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DS1673
20-PIN
20-PIN
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Untitled
Abstract: No abstract text available
Text: DSI 321 P R E L IM IN A R Y DS1321 Flexible Nonvolatile Controller with Lithium Battery Monitor DALLAS SEMICONDUCTOR PIN ASSIGNMENT FEA TU RES • Converts CM OS SRAM into nonvolatile memory • Unconditionally write-protects SRAM when V q c is out of tolerance
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DS1321
2bmi30
DD14SA7
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Untitled
Abstract: No abstract text available
Text: DS1670 DALLAS SEMICONDUCTOR DS1670 Portable System Controller FEATURES PIN ASSIGNMENT • Provides real time dock: - Counts seconds, minutes, hours, date of the month, month, day of the week, and year with leap ye a r com pensation valid up to 2100 Power control circuitry supports system power
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DS1670
DS1670
20-PIN
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Untitled
Abstract: No abstract text available
Text: DS1384 DALLAS SEMICONDUCTOR DS1384 Watchdog Timekeeping Controller FEATURES PIN ASSIGNMENT • Keeps track of hundredths of seconds, seconds, m in utes, hours, days, date of the month, months, and years with leap ye a r com pensation valid up to 2100 • W atchdog tim er restarts an o u t-o f-co n tro l processor
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DS1384
DS1384
10years
DS1384FP
56--G
56--G4012-001
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Untitled
Abstract: No abstract text available
Text: DS1314 PRELIM INARY DALLAS SEMICONDUCTOR DS1314 3V Nonvolatile Controller with Lithium Battery Monitor FEATURE PIN ASSIGNMENT • Converts CM OS SRAM into nonvolatile m emory • Unconditionally w rite-p rote cts SRAM when out of tolerance Vqq is • Autom atically switches to b attery-backup supply
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DS1314
DS1314
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1312s
Abstract: No abstract text available
Text: D S1312 DS 13 1 2 Nonvolatile C ontroller with Lithium Battery M onitor DALLAS SEMICONDUCTOR F EA T U R ES PIN A S S IG N M E N T • Converts CM OS SRAM into nonvolatile m emory • Unconditionally w rite -p ro te cts SRAM when out of tolerance Vqq is • Autom atically switches to battery backup supply
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S1312
pace-s6/12/97
DS1312
1312s
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F475
Abstract: No abstract text available
Text: DS1312 DS1312 DALLAS SEMICONDUCTOR N onvolatile C ontroller with Lithium Battery M onitor FEATURES PIN ASSIGNMENT • Converts CM OS SRAM into nonvolatile memory • Unconditionally write-protects SRAM when out of tolerance Vqq is • Automatically switches to battery backup supply
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DS1312
DS1312
F475
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TC88411F
Abstract: TC88411
Text: INTEGRATED OSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58A040 F SILICON GATE CMOS 4 MBIT 4 M X 1 BITS CMOS AUDIO NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58A040 is a 5-volt 4 Mbit NAND Electrically Erasable and Programmable Read Only Memory
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TC58A040
256-bit
TC58A040F--29_
TC58A040F
OP28-P-450
TC58A040F--30*
TC88411F
TC88411
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TC5816
Abstract: TC5816AFT
Text: INTEGRATED 'OSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5816 ARSILICON GATE CMOS 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC5816 device is a single 5-volt 16 Mbit NAND Electrically Erasable and Programmable Read Only
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TC5816
264-byte,
264-byte
TC5816AFT--35
TC5816AFT
TC5816AFT--36
TC5816AFT
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TC57258AD-15
Abstract: TC57256D TC57256AD-20
Text: TOSHIBA MOS MEMORY PRODUCTS TC57256AD-15, TC57256AD-20 IDESCRIPTION] The TC57256AD is a 32,768 w o r d x 8 bit CMOS ultraviolet light erasable and electri cally programmable read only memory. For read operation, the TC57256AD's access time is 150ns,and the TC57256AD operates from a single 5-volt power supply and has low power
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TC57256AD-15,
TC57256AD-20
TC57256AD
150ns
30mA/6
TC57256AD.
A10-VA14,
TC57258AD-15
TC57256D
TC57256AD-20
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DS1259
Abstract: MAX1259 MAX1259C MAX1259CPE MAX1259CWE MAX1259EPE MAX1259MJE
Text: 19-4638; Rev. 1; 4/94 M A X 1259 B a tte ry M an ag er j G e n e ra l D e s c rip tio n The MAX1259 battery m anager provides backup-battery sw itching for CMOS RAM, m icroprocessors, or other low-power logic ICs. It autom atically switches to the backup battery when the prim ary power supply is inter
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AX1259
200mV
250mA
MAX1259,
MAXI259
DS1259
MAX1259
MAX1259C
MAX1259CPE
MAX1259CWE
MAX1259EPE
MAX1259MJE
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DS1236
Abstract: DS1236A DS1236A-5 DS1336
Text: DS1236A MicroManager Chip w w w.dalsem i.com PIN ASSIGNMENT FEATURES • Holds microprocessor in check during power transients ■ Halts and restarts an out-of-control microprocessor ■ Monitors pushbutton for external override ■ Warns microprocessor of an impending power
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DS1236A
DS1236A-5
DS1236
DS1236A-5
DS1336
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