2sc1173
Abstract: 2SA473
Text: SILICON NPN EPITAXIAL TYPE 2SC1173 U n i t 10.3 MAX. POWER AMPLIFIER APPLICATIONS, i tí m m 0 3 .6 ± 0 .2 CAR RADIO, CAR STEREO OUTPUT STAGE AMPLIFIER APPLICATIONS. FEATURES: • Good Linearity of hpE• Complementary to 2SA473 and 5 Watts Output Applications.
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2SC1173
2SA473
O-220AE
Ic-10mA,
2sc1173
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YTS2222A
Abstract: transistor marking 1p Z
Text: ¡ TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS y t ä m m II YTSZZZZA FOR GENERAL PUROSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO VHF FREQUENCY APPLICATION FEATURES: . DC Current Gain Specified : 0.1— 500mA . Low Collector-Emitter Saturation Voltage
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500mA
YTS2222A
300MHz
YTS2907A.
500mA,
Ta-25
150mA,
YTS2222A
transistor marking 1p Z
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Untitled
Abstract: No abstract text available
Text: TOS H IB A DISCRETE/OPTO 45E TDTTESD D GGIT'HO TOSHIBA TRANSISTOR 2 «TOS4 YTS2222 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Z.cí - 3 FOR GENERAL PURPOSE USE Unit in mm MIDIUM-SPEED SWITCHING AND AUDIO TO +ÛS 2 .5 -a s VHF FREQUENCY APPLICATION + < 125
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YTS2222
-50QmA
500mA,
YTS2907
VCE-10V,
Ic-10mA
150mA
500mA
Ic-150tnA
150mA,
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TIL78
Abstract: photo transistor til78 til78 phototransistor FPT100 phototransistor ft06 MRD100 OS13 phototransistor OCP71
Text: S Y M B O L S & C O D E S E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE
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MM4048
Abstract: BC406 L17D D29A10 D29A12 D29A7 D29A8 D29A9 MA7809 SA2255
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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/AT-10uV/deg
SA2720*
SA2721
SA2722*
SA2723*
SA2724*
/AT-10uV/dea
MM4048
BC406
L17D
D29A10
D29A12
D29A7
D29A8
D29A9
MA7809
SA2255
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A642 transistor pnp
Abstract: D1302 transistor D1303 d1302 transistor A641 NPN transistor FT57 D1103 D1303 FM1111 A642 transistor to 92
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
FT4020
FT4021
FT4022
BVCEO-45V
ICBO-10nA
BVCEO-60V
A642 transistor pnp
D1302
transistor D1303
d1302 transistor
A641 NPN transistor
FT57
D1103
D1303
FM1111
A642 transistor to 92
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TIL78
Abstract: til78 phototransistor L44A BFX82 K1504 MT101B P1028 phototransistor OCP71 transistor k1502
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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TIL78
Abstract: SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06
Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C
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NPN110.
fab-100Mc;
BVCB0-30V;
Pc-125mW
BVCB0-30V
lc-10mA;
fab-150Mc;
lc-10mA
fab-200Mc;
TIL78
SA2739
phototransistor OCP71
cm601
JAN2N491
photo transistor til78
til78 phototransistor
CM602
FPN100
ft06
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2N4241
Abstract: OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C
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NPN110.
12X084B
12X165
VCEO-15V
hFE-30
ICBO-200mA
PA-300mW;
VCEO-55V;
hFE-100
Pt-25W;
2N4241
OC74
CM601
2N4042
BSV39
2N3523
bc143
BC222 TRANSISTOR
ft06
200S
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P1027
Abstract: 2N3379 P1069E SD5011 UC-41 2N4088 K1502 RN1030 1203 6d ML111B
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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NPN110.
FT4020
FT4021
FT4022
BVCEO-45V
ICBO-10nA
BVCEO-60V
P1027
2N3379
P1069E
SD5011
UC-41
2N4088
K1502
RN1030
1203 6d
ML111B
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TIL78
Abstract: photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C
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NPN110.
fab-100Mc;
BVCB0-30V;
Pc-125mW
BVCB0-30V
lc-10mA;
fab-150Mc;
lc-10mA
fab-200Mc;
TIL78
photo transistor til78
K1202
phototransistor OCP71
photo TIL78
til78 phototransistor
2n318
2SK19GR
2SK19Y
C682A
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Untitled
Abstract: No abstract text available
Text: PJ2N3904 NPN Epitaxial Silicon Transistor GENERAL PURPOSE TRANSISTOR • • Collector-Emitter Voltage: VCe o = 40V Collector Dissipation: Pc max = 625 mW TO-92 SOT-23 B ABSOLUTE M AXIM U M RATINGS (Ta = 25 C) Symbol Rating Unit Collector-Base Voltage VCBO
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PJ2N3904
OT-23
Cut-off70
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A642 transistor pnp
Abstract: a603 transistor A608 transistor pnp transistor A608 A608 N A608 A1480 A642 transistor to 92 A641 NPN transistor A641 transistor
Text: SYMBOLS & CODES EXPLAINED S Y M B O L S & C O D E S COM MON TO M O R E T H A N O N E T E C H N I C A L S E C T IO N LINE No. TYPE No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12
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diff103
FT4020
FT4021
FT4022
BVCEO-45V
ICBO-10nA
BVCEO-60V
A642 transistor pnp
a603 transistor
A608 transistor pnp
transistor A608
A608 N
A608
A1480
A642 transistor to 92
A641 NPN transistor
A641 transistor
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transistor 2SC2271
Abstract: 2SC2271 2SC2271-E 2SC2271 Sanyo
Text: 2SC2271 SANYO SEMICONDUCTOR 2SC2271 NPN Triple Diffused Planar Type Silicon Transistor For Picture Output or Driver of H-Deflection Absolute Maximum Ratings at Ta=25°C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current
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2SC2271
10oltage
Ic-10mA
2SC2271
SC-51
transistor 2SC2271
2SC2271-E
2SC2271 Sanyo
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Untitled
Abstract: No abstract text available
Text: 2N 2906 PN 2906 M • 2N2906A • PN2906A PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES 1 CASE TO-18 THE 2TT2906, 2N2906A, PN2906, PN2906A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SFEET SWITCHING APPLICATIONS. THEY ARE
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2N2906A
PN2906A
2TT2906,
2N2906A,
PN2906,
PN2906A
2N2221,
2N2221A,
PN2221
PN2221A
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Untitled
Abstract: No abstract text available
Text: V : -O THE 2N4402, 2N4403 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N4400 AND 2N4401 RESPECTIVELY. 2N4402 2N4403 CASE TO-92A EBC ABSOLUTE MAXIMUM RATINGS
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2N4402,
2N4403
2N4400
2N4401
2N4402
2N4403
O-92A
500fi
310mW
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BC550
Abstract: Amplifier with transistor BC549 C420-800 bc549 transistor bc549 BC549 NPN transistor
Text: SEMICONDUCTOR TECHNICAL DATA BC549/550 EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE • For Complementary with PNP Type BC559/560. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING BC549 Collector-Base Voltage 30 V V CBO BC550
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BC549/550
BC559/560.
BC549
BC550
10juA,
10j/A,
100mA,
BC550
Amplifier with transistor BC549
C420-800
transistor bc549
BC549 NPN transistor
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TF-450
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 10 4 7 A ISSUE 3 -JANUARY 1995_ _ FEATURES * Very Low Saturation Voltage * High Gain * 4 Amp Continuous Current APPLICATIONS * DC-DC Convertors * Power Management - Supply Switching
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ZTX1047A
NY11725
JS70S7Ã
TF-450
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KN4400
Abstract: KN4401
Text: KEC SEMICONDUCTOR TECHNICAL DA TA KOREA ELECTRONICS CO.,LTD. KN4400/4401 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. • Complementary to KN4402/4403. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage
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KN4400/4401
KN4402/4403.
KN4400/4401
KN4400
KN4401
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KTA1659A
Abstract: KTC4370A
Text: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTC4370A EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES • High Transition Frequency : fT=100MHz Typ. . • Complementary to KTA1659A. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
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KTC4370A
100MHz
KTA1659A.
220IS
100mA
500mA,
500mA
KTA1659A
KTC4370A
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70H40
Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©
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2SA1162
2SA1163
2SC1815
2SA1015
2SC2458
2SC2459
2SA1048
2SA1049
2SC2712
2SC2713
70H40
transistor equivalent d2012
2SC734 equivalent
3sk73 equivalent
2sb502
2sa776 bl
2sc2075 equivalent
2sk For Low Noise Audio Amplifier Applications
2sa970 BL equivalent
2sa776 gr
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MPSa14 equivalent
Abstract: mpsa13 equivalent mpsa14 MPSa13 equivalent MPS-A13 PSA13
Text: TOSHIBA DARLINGTON TRANSISTOR M PSA13,14 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR PRINTER DRIVE, CORE DRIVE AND LED DRIVE APPLICATIONS. FEATURE: High DC Current Gain @ Ic=100mA MPSA13 hFE=10,000 Min. MPSA14 hFE=20,000 Min. 1. EMITTER 2. BASE a COLLECTOR
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PSA13
MPSA13
MPSA14
100mA
MPS-A13)
Ic-10mA
MPS-A14)
100mA
MPSa14 equivalent
equivalent mpsa14
MPSa13 equivalent
MPS-A13
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2SD1140
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE DARLINGTON POWER -2SD1140 INDUSTRIAL APPLICATIONS M I C R O M O TO R DRIVE, HAMMER DRIVE APPLICATIONS. Unit in mm SWITCHING APPLICATIONS. 5.1 M A X . POWER AM PL I F I E R APPLICATIONS. FEATURES : . High DC Current Gain : hFE=l!,000( M i n •)
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-2SD1140
150mA)
IC-10mA,
150mA
2SD1140
2SD1140
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MA7809
Abstract: 2S711 SA2713 L17D STL51 BC412 KIS434 NS435 NS436 NS437
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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/AT-10uV/deg
SA2720*
SA2721
SA2722*
SA2723*
SA2724*
/AT-10uV/dea
MA7809
2S711
SA2713
L17D
STL51
BC412
KIS434
NS435
NS436
NS437
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