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    OMRON Industrial Automation CBL-47TXIC-10M

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    OMRON Industrial Automation MS4800-CBLRXIC-10M

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    OMRON Industrial Automation CBL47TXIC10M

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    OMRON Industrial Automation CBL47RXIC10M

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    IC10M Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    dsPIC33e family Reference Manual

    Abstract: RH13 dsPic33EP512MU810 DS70580 pic18 port timing diagram PIC32 PICC-18 connector Rj9 PIC24EP512GU810 3 phase motor soft starter diagram
    Text: dsPIC33EPXXXMU806/810/814 and PIC24EPXXXGU810/814 Data Sheet High-Performance, 16-Bit Digital Signal Controllers and Microcontrollers 2009-2011 Microchip Technology Inc. Preliminary DS70616C Note the following details of the code protection feature on Microchip devices:


    Original
    dsPIC33EPXXXMU806/810/814 PIC24EPXXXGU810/814 16-Bit DS70616C pro305 DS70616C-page dsPIC33e family Reference Manual RH13 dsPic33EP512MU810 DS70580 pic18 port timing diagram PIC32 PICC-18 connector Rj9 PIC24EP512GU810 3 phase motor soft starter diagram PDF

    2-line 16-character LCD screen

    Abstract: spartan 3e vga ucf vhdl code for lcd of spartan3E analog to digital converter vhdl coding spartan 3e crt horizontal deflection circuit LTC1407A-1 ON SPARTAN 3E LAN83C185 vhdl code microblaze ethernet XC3S500E keyboard UG230
    Text: Spartan-3E Starter Kit Board User Guide UG230 v1.0 March 9, 2006 Click a component to jump to the related documentation. Not all components have active links. R R Xilinx is disclosing this Document and Intellectual Property (hereinafter “the Design”) to you for use in the development of designs to operate


    Original
    UG230 LVCMOS33 2-line 16-character LCD screen spartan 3e vga ucf vhdl code for lcd of spartan3E analog to digital converter vhdl coding spartan 3e crt horizontal deflection circuit LTC1407A-1 ON SPARTAN 3E LAN83C185 vhdl code microblaze ethernet XC3S500E keyboard UG230 PDF

    2sc1173

    Abstract: 2SA473
    Text: SILICON NPN EPITAXIAL TYPE 2SC1173 U n i t 10.3 MAX. POWER AMPLIFIER APPLICATIONS, i tí m m 0 3 .6 ± 0 .2 CAR RADIO, CAR STEREO OUTPUT STAGE AMPLIFIER APPLICATIONS. FEATURES: • Good Linearity of hpE• Complementary to 2SA473 and 5 Watts Output Applications.


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    2SC1173 2SA473 O-220AE Ic-10mA, 2sc1173 PDF

    YTS2222A

    Abstract: transistor marking 1p Z
    Text: ¡ TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS y t ä m m II YTSZZZZA FOR GENERAL PUROSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO VHF FREQUENCY APPLICATION FEATURES: . DC Current Gain Specified : 0.1— 500mA . Low Collector-Emitter Saturation Voltage


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    500mA YTS2222A 300MHz YTS2907A. 500mA, Ta-25 150mA, YTS2222A transistor marking 1p Z PDF

    Untitled

    Abstract: No abstract text available
    Text: TOS H IB A DISCRETE/OPTO 45E TDTTESD D GGIT'HO TOSHIBA TRANSISTOR 2 «TOS4 YTS2222 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Z.cí - 3 FOR GENERAL PURPOSE USE Unit in mm MIDIUM-SPEED SWITCHING AND AUDIO TO +ÛS 2 .5 -a s VHF FREQUENCY APPLICATION + < 125


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    YTS2222 -50QmA 500mA, YTS2907 VCE-10V, Ic-10mA 150mA 500mA Ic-150tnA 150mA, PDF

    TIL78

    Abstract: photo transistor til78 til78 phototransistor FPT100 phototransistor ft06 MRD100 OS13 phototransistor OCP71
    Text: S Y M B O L S & C O D E S E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE


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    PDF

    MM4048

    Abstract: BC406 L17D D29A10 D29A12 D29A7 D29A8 D29A9 MA7809 SA2255
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    /AT-10uV/deg SA2720* SA2721 SA2722* SA2723* SA2724* /AT-10uV/dea MM4048 BC406 L17D D29A10 D29A12 D29A7 D29A8 D29A9 MA7809 SA2255 PDF

    A642 transistor pnp

    Abstract: D1302 transistor D1303 d1302 transistor A641 NPN transistor FT57 D1103 D1303 FM1111 A642 transistor to 92
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


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    NPN110. FT4020 FT4021 FT4022 BVCEO-45V ICBO-10nA BVCEO-60V A642 transistor pnp D1302 transistor D1303 d1302 transistor A641 NPN transistor FT57 D1103 D1303 FM1111 A642 transistor to 92 PDF

    TIL78

    Abstract: til78 phototransistor L44A BFX82 K1504 MT101B P1028 phototransistor OCP71 transistor k1502
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    PDF

    TIL78

    Abstract: SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C


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    NPN110. fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; TIL78 SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06 PDF

    2N4241

    Abstract: OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C


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    NPN110. 12X084B 12X165 VCEO-15V hFE-30 ICBO-200mA PA-300mW; VCEO-55V; hFE-100 Pt-25W; 2N4241 OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S PDF

    P1027

    Abstract: 2N3379 P1069E SD5011 UC-41 2N4088 K1502 RN1030 1203 6d ML111B
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    NPN110. FT4020 FT4021 FT4022 BVCEO-45V ICBO-10nA BVCEO-60V P1027 2N3379 P1069E SD5011 UC-41 2N4088 K1502 RN1030 1203 6d ML111B PDF

    TIL78

    Abstract: photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C


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    NPN110. fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; TIL78 photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A PDF

    Untitled

    Abstract: No abstract text available
    Text: PJ2N3904 NPN Epitaxial Silicon Transistor GENERAL PURPOSE TRANSISTOR • • Collector-Emitter Voltage: VCe o = 40V Collector Dissipation: Pc max = 625 mW TO-92 SOT-23 B ABSOLUTE M AXIM U M RATINGS (Ta = 25 C) Symbol Rating Unit Collector-Base Voltage VCBO


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    PJ2N3904 OT-23 Cut-off70 PDF

    transistor 2SC2271

    Abstract: 2SC2271 2SC2271-E 2SC2271 Sanyo
    Text: 2SC2271 SANYO SEMICONDUCTOR 2SC2271 NPN Triple Diffused Planar Type Silicon Transistor For Picture Output or Driver of H-Deflection Absolute Maximum Ratings at Ta=25°C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current


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    2SC2271 10oltage Ic-10mA 2SC2271 SC-51 transistor 2SC2271 2SC2271-E 2SC2271 Sanyo PDF

    transistor a1271

    Abstract: KTC3203 Y A1271 KTC3203 A1271 Y A1271 transistor ktC3203 y transistor KTA1271 lb25-1
    Text: SEMICONDUCTOR TECHNICAL DATA KTC3203 EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE • Complementary to KTA1271. RATING UNIT Collector-Base Voltage V CBO 35 V Collector-Emitter Voltage V CEO 30 V Em itter-Base Voltage V ebo 5 V Collector Current


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    KTC3203 KTA1271. transistor a1271 KTC3203 Y A1271 KTC3203 A1271 Y A1271 transistor ktC3203 y transistor KTA1271 lb25-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N 2906 PN 2906 M • 2N2906A PN2906A PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES 1 CASE TO-18 THE 2TT2906, 2N2906A, PN2906, PN2906A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SFEET SWITCHING APPLICATIONS. THEY ARE


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    2N2906A PN2906A 2TT2906, 2N2906A, PN2906, PN2906A 2N2221, 2N2221A, PN2221 PN2221A PDF

    Untitled

    Abstract: No abstract text available
    Text: V : -O THE 2N4402, 2N4403 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N4400 AND 2N4401 RESPECTIVELY. 2N4402 2N4403 CASE TO-92A EBC ABSOLUTE MAXIMUM RATINGS


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    2N4402, 2N4403 2N4400 2N4401 2N4402 2N4403 O-92A 500fi 310mW PDF

    BC550

    Abstract: Amplifier with transistor BC549 C420-800 bc549 transistor bc549 BC549 NPN transistor
    Text: SEMICONDUCTOR TECHNICAL DATA BC549/550 EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE • For Complementary with PNP Type BC559/560. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING BC549 Collector-Base Voltage 30 V V CBO BC550


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    BC549/550 BC559/560. BC549 BC550 10juA, 10j/A, 100mA, BC550 Amplifier with transistor BC549 C420-800 transistor bc549 BC549 NPN transistor PDF

    TF-450

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 10 4 7 A ISSUE 3 -JANUARY 1995_ _ FEATURES * Very Low Saturation Voltage * High Gain * 4 Amp Continuous Current APPLICATIONS * DC-DC Convertors * Power Management - Supply Switching


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    ZTX1047A NY11725 JS70S7Ã TF-450 PDF

    ex 3863

    Abstract: MJf16206
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JW 16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state-of-the-art SWITCHMODE bipolar power transistors. They are specifically designed for use In horizontal deflection


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    MJF16206 MJW16206 AN1040. ex 3863 PDF

    KN4400

    Abstract: KN4401
    Text: KEC SEMICONDUCTOR TECHNICAL DA TA KOREA ELECTRONICS CO.,LTD. KN4400/4401 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. • Complementary to KN4402/4403. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage


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    KN4400/4401 KN4402/4403. KN4400/4401 KN4400 KN4401 PDF

    KTA1659A

    Abstract: KTC4370A
    Text: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTC4370A EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES • High Transition Frequency : fT=100MHz Typ. . • Complementary to KTA1659A. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC


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    KTC4370A 100MHz KTA1659A. 220IS 100mA 500mA, 500mA KTA1659A KTC4370A PDF

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


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    2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr PDF