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    IC WE 3 LZ 01 Search Results

    IC WE 3 LZ 01 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    IC WE 3 LZ 01 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    rev counter

    Abstract: n262 R8A66120FFA 1024K-WORD N258
    Text: R8A66120FFA RJJ03FXXXREJ03F0161-0170 Rev.1.70 May.16.2008 4M-bit x 2 MULTIPLE FIELD MEMORY Description R8A66120FFA is high-speed field memory with two FIFO First In First Out memories of 4M-bit, which uses high-performance silicon gate process technology.


    Original     		PDF R8A66120FFA RJJ03FXXXREJ03F0161-0170 R8A66120FFA 100MHz PLQP0048KB-A 48P6Q-A) 48pins 1024-words 1024K-word REJ03F0161-0170 rev counter n262 1024K-WORD N258

    TDA 7450

    Abstract: MVL blower PAPST TYP 8412 NGH papst typ 614 papst 8412 L papst 4214/12h papst variofan 4314 v papst 4312 ebm papst RG 160 papst-motoren
    Text: PAPST BASICS S t a n d a rd R a n g e of Fans and Blowers Tr e n d s e t t e r i n F a n Te c h n o l o g y Among the best. Trendsetting with innovative technologies. Listening to customers’ needs. Developing new ideas to meet requirements and realising them with pioneering spirit.


    Original     		PDF TR-35220 TDA 7450 MVL blower PAPST TYP 8412 NGH papst typ 614 papst 8412 L papst 4214/12h papst variofan 4314 v papst 4312 ebm papst RG 160 papst-motoren

    16GH066V1

    Abstract: No abstract text available
    Text: SKiiP 16GH066V1 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter L:BG *: *: *:.` L+BG $G P FE R:Z 1'7&- /2 &%68-& -?& 858&4 $- P FE ]^U_ R: Z$T P QEU R: $- P FE ]^U_ R: Z$T P Q^E R: 2? P Q M- $T MiniSKiiP 1 H-bridge inverter SKiiP 16GH066V1 Diode - Inverter


    Original     		PDF 16GH066V1 78M82 16GH066V1

    HM671400H

    Abstract: HM671400HJP-15 HM671400HJP-20 Hitachi DSA0019 Hitachi DSA00190 NS07
    Text: HM671400H Series 4,194,304-words x 1-bit High Speed Static Random Access Memory ADE-203-086G Z Rev. 8 Aug. 28, 1996 Features • • • • • • • 4194304-words × 1 bit organization Directly TTL compatible input and output +5.0 V Single Supply Completely static memory


    Original     		PDF HM671400H 304-words ADE-203-086G 4194304-words HM671400HJP-20 HM671400HJP-15 CP-32DB) D-85622 HM671400HJP-15 HM671400HJP-20 Hitachi DSA0019 Hitachi DSA00190 NS07

    Untitled

    Abstract: No abstract text available
    Text: TT WS256K8-XCX M/HITE /M ICRO ELECTRO N ICS 256Kx8 SRAM MODULE FEATURES FIG. 1 • A c c e ss T im e s 25 to 45n S PIN CONFIGURATION TOP VIEW NCC A16C A14C A I2 C A7T A6C A5L A4 C A3C A2¿ A1C AO □ i/oor 1/01 c 1/0 2 C Vss Q 1 2 3 4 5 6 7 8 9 10 11 12 13


    OCR Scan     		PDF WS256K8-XCX 256Kx8 MIL-STD-883 06HXX 07HXX 256Kx 08HXX

    Untitled

    Abstract: No abstract text available
    Text: WHITE /MICROELECTRONICS 64Kx16 SRAM WPS64K16-XUX p r e li m i n a r y * PLASTIC PLUS FEATURES • Access Times of 15,17, 20nS PIN CONFIGURATION TOP VIEW AO C 1 A1 C 2 A2 C 3 A3 C 4 A4 E S CS C 6 1/01 C 7 I/Q2 C 8 I/03 C 9 I/04 C 10 Vcc E 11 Vss C 12 1/05 C 13


    OCR Scan     		PDF 64Kx16 WPS64K16-XUX 64K16

    Untitled

    Abstract: No abstract text available
    Text: □PM V<" P - M icrosvstem s In I~-c D ense-Pac - - - -C - DPS128M8A h i g jn h s ed rA am c n ik a prce c u c L etK M iiL ¿ - -O 128K X 8 C M O S SRAM M O N O LITH IC ADVANCED INFORMATION D ESC R IP TIO N : T h e D P S 1 2 8 M 8 A is a high speed m o no lithic


    OCR Scan     		PDF DPS128M8A DPS128M 600-mil 32-pin J0A037-10

    Untitled

    Abstract: No abstract text available
    Text: M/HITE /MICROELECTRONICS WMS256K4-XDSX 256Kx4 SRAM MONOLITHIC FEATURES PIN CONFIGURATION TOP VIEW 28 □ Vcc 27 □ A17 26 □ A16 25 □ A15 24 HA14 23 ZJA13 22 □ A12 21 3A11 20 ]N C 19 Di/os 18 Hl/02 17 31/01 16 ni/oo 15 □ WÊ A cce ss Times 25, 35, 45ns


    OCR Scan     		PDF WMS256K4-XDSX 256Kx4 ZJA13 Hl/02 AO-17 15b3bSfl 0D0173fl

    424260-70

    Abstract: 424260-70 nec japan 424260-80 PD424260LE
    Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿P D 4 2 4 2 6 0 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /uPD424260 is a 262,144 words by 16 bits dynamic CMOS RAM. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.


    OCR Scan     		PDF 16-BIT, uPD424260 PD424260 44-pin 40-pin PD424260 IR35-207-3 424260-70 424260-70 nec japan 424260-80 PD424260LE

    Untitled

    Abstract: No abstract text available
    Text: □PM Dense-Pac Microsystems, Inc. ^ CERAMIC 128K X DESCRIPTION: The DPS128M8 is a monolithic 128K X 8 Static Random Access Memory SRAM fabricated using CMOS technology. It is designed for use in high density, high speed, low power applications. All pins


    OCR Scan     		PDF DPS128M8 DPS128M8 600-mil 32-pin 32-Pad 30A037-00

    Untitled

    Abstract: No abstract text available
    Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT BZX384-C2V4 THRU BZX384-C75 ZENER DIODES SOD-323 FEATURES 012 0.3 ♦ Silicon Planar Power Zener Diodes Cathode Mark ♦ The Zener voltages are graded according to the international E 24 standard. Standard Zener voltage


    OCR Scan     		PDF BZX384-C2V4 BZX384-C75 OD-323 OD-323

    p 32 lcc 300 r

    Abstract: 32-PIN Dense-Pac Microsystems
    Text: 30A03 7-01 B DENSE FAC 1 Megabit High Speed CM O S SRAM MICROSYSTEMS DPS128M8En PRELIMINARY DESCRIPTION: The DPS128M8En is a very high speed 12 8 K x 8 Static Random Access M em ory SRAM fabricated w ith a CMOS silicon gate process. The memory utilizes asynchronouscircuitryand may be maintained in any


    OCR Scan     		PDF 30A03 DPS128M8En DPS128M8En 128Kx 32-PAO 32-PIN California92841-1428 G001b5fi p 32 lcc 300 r Dense-Pac Microsystems

    Untitled

    Abstract: No abstract text available
    Text: M O S E L V IT E LIC V53C8126H ULTRA-HIGH PERFORMANCE, 128K X 8 B IT FAST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE PRELIMINARY 35 40 45 50 Max. RAS Access Time, tpjAc 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (tcAA) 18 ns 20 ns 22 ns 24 ns


    OCR Scan     		PDF V53C8126H V53C81igh-Z 26/24-pin 28-pin

    Untitled

    Abstract: No abstract text available
    Text: M O S E L V IT E L IC V53C8126L ULTRA-HIGH PERFORMANCE, 3.3 VOLT 128K X 8 B IT FAST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE 60 60 ns Max. RAS Access Time, tpjAc Max. Column Address Access Time, PRELIMINARY 30 ns ( Ìq a a ) Min. Fast Page Mode Cycle Time, (tPC)


    OCR Scan     		PDF V53C8126L 28-pin 24-pin 26/24-pin

    Untitled

    Abstract: No abstract text available
    Text: PR ELIM IN A R Y M O SEL VI TELI C V53C816H 512K X 16 FA ST P A G E M O D E CM O S DYNAM IC R A M HIGH PERFORMANCE 40 45 50 60 Max. RAS Access Tim e, tpj^c 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, (tcAA) 20 ns 22 ns 24 ns 30 ns Min. Fast Page Mode Cycle Time, (tpc)


    OCR Scan     		PDF V53C816H 16-bit 40-Pin

    Untitled

    Abstract: No abstract text available
    Text: □PM DPS256S8P Dense-Pac Microsystems, Inc. 256K X 8 CMOS SRAM MODULE O DESCRIPTION: The D P S256 S8P is a 256K X 8 high-density, low-power static RAM module comprised of two 1 2 8 K X 8 m o no lithic SR A M 's, an advanced high-speed C M O S d e co d er and deco upling


    OCR Scan     		PDF DPS256S8P DPS256S8P 600-mil-wide, 32-pin S256S8P 120ns 150ns

    Untitled

    Abstract: No abstract text available
    Text: W24512A-35NS Winbond Electronics Corp. 64 K x 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W24512A is a high speed, low power CMOS static RAM organized as 65536 x 8 bits that operates on a single 5-volt power supply, This device is manufactured using Winbond‘s high


    OCR Scan     		PDF W24512A-35NS W24512A 32-pin 0D0D223

    Untitled

    Abstract: No abstract text available
    Text: COPM D P S 1M S 1 6 P 1024KX 16 CMOS SRAM MODULE Dense-Pac Microsystems, Inc. O D ESC R IP TIO N : The DPS1MS16P is a 16 megabit, low-power static RAM module. The module is comprised of sixteen 128K X 8 SRAM devices and two high-speed decoders. The DPS1MS16P can


    OCR Scan     		PDF 1024KX DPS1MS16P 1024K 2048K DPS1MS16XP) DPS1MS16XP Technology30^

    Untitled

    Abstract: No abstract text available
    Text: DPS129 □PM Dense-Pac Microsystems, Inc. ^ 16K X 8 CMOS SRAM MODULE NOT RECOMENDED FOR NEW DESIGNS D E S C R IP T IO N : The DPS 129 is a 16K X 8 Static Random Access Memory SRAM module using 8 C M O S 16K X 1 SRAMs. The memory utilizes asynchronous circuitry


    OCR Scan     		PDF DPS129 DPS129 30A002-01

    Untitled

    Abstract: No abstract text available
    Text: TT M/HITE M I C R O E L E C T R O N I C S W M S2 5 6 K 1 6 -X X X 256Kx16 MONOLITHIC SRAM FEATURES • A ccess Tim es 17, 20, 25, 35ns D ata I/O C om patible w ith 3.3V devices ■ M IL-S TD -883 C om p lian t Devices A v a ila b le 2V M in im u m Data R ete ntion fo r b a tte ry back up operatio n


    OCR Scan     		PDF 256Kx16 WMS256K16-XXX AO-17 01HXX* 02HXX* 03HXX*

    Untitled

    Abstract: No abstract text available
    Text: Creation Date: October 7, 1997 Revision: October 6, 1998 filc o m o R PRELIMINARY A P 9 B 1 1 4 /A P 9 B 1 1 4 L 3.3V, 6 4K x 16, Very High- Speed, Low-Power, CMOS Static RAM With Optional 2V Data Retention Features • • • • • • • • • •


    OCR Scan     		PDF V/100 44-pin, 400-mil

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC 4 M egabit CMOS SRAM MI CROS YSTEMS DPS512S8N D E S C R IP T IO N : The DPS512S8N is a Military 512K X 8 high-density, low-power static RAM module comprised of four ceramic 128K X 8 monolithic SRAM's, an advanced high-speed CMOS decoder and decoupling capacitors


    OCR Scan     		PDF DPS512S8N DPS512S8N TheDPS512S8N 600-mil-wide, 32-pin PS512S8N 100ns 120ns 150ns

    Untitled

    Abstract: No abstract text available
    Text: P R E L IM IN A R Y M O SEL V I T E L I C V 53C 816H 5 1 2 K X 16 F A S T P A G E M O D E C M O S D Y N A M IC R A M HIGH PERFORMANCE 40 45 50 60 Max. RAS Access Tim e, tp^c 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, ( t c ^ ) 20 ns 22 ns 24 ns


    OCR Scan     		PDF 110ns 16-bit 256Kx16 40-pin

    Untitled

    Abstract: No abstract text available
    Text: □PM v Dense-Pac Microsystems, Inc. DPS1024 64K X 16 C M O S SRAM M O D U LE O DESCRIPTIO N: The D PS1 0 2 4 is a 64K X 16 high-speed, low-power static R A M module comprised of sixteen 64K X 1 monolithic SR A M 's, and decoupling capacitors surface mounted on a co-fired ceramic substrate


    OCR Scan     		PDF DPS1024 -55ns 30A006-04 S1024