Untitled
Abstract: No abstract text available
Text: Power Transistors Part No. Polarity Bipolar Transistors VCEO IC PC V (A) (W) hFE @ VCE & IC Min. Max. VCE IC (V) VCE(sat) @ IC (A) Max. (V) IC fT @ IC IC (A) Min. (MHz) (A) MJE340 NPN 300 0.5 20.0 30 240 10 0.05 - - - - MJE350 PNP 300 0.5 20.0 30 240 10
|
Original
|
MJE340
|
PDF
|
TPT5609
Abstract: SS8550 sot-23 Y2 sot-23 npn marking code cr SS8050 sot-89 Y1 6B sot 363 2N3904 SOT-23 MARKING CODE S9018 j6 sot-23 Marking 2TY SOT 363 marking CODE 2H MJE13003 2A
Text: MCC TM Micro Commercial Components SMALL SIGNAL &POWER TRANSISTORS VCEO Part No hFE @ VCE & IC IC Polarity VCE sat & VBE(sat) @ IC & IB fT @ VCE & IC VCE IC VCE(sat) VBE(sat) IC IB fT Min. fT Max. VCE IC hFE hFE Max. (V) (mA) Max.(V) Max.(V) (mA) (mA) (MHz)
|
Original
|
2N3904
2N3906
2N4124
2N4400
2N4401
2N4402
2N4403
2N5401
2N5551
2N6517
TPT5609
SS8550 sot-23 Y2
sot-23 npn marking code cr
SS8050 sot-89 Y1
6B sot 363
2N3904 SOT-23 MARKING CODE
S9018 j6
sot-23 Marking 2TY
SOT 363 marking CODE 2H
MJE13003 2A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SMD Darlington Transistors Part No. MMBTA13 MMBTA14 MMBT6427 20070515 VCE sat & VBE(sat) hFE @ VCE & IC fT @ VCE & IC Pack@ IC & I B VCEO IC Device age Polarity Marking VCE IC Max. Max. IC IB Min. Max. VCE IC Code Min. Max. 7" (V) (A) (V) (mA) (V) (V) (mA) (mA) (MHz)(MHz) (V) (mA) Reel
|
Original
|
MMBTA13
MMBTA14
MMBT6427
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SMD Power Transistors Part No. Polarity IC VCEO PC A (V) (W) hFE @ VCE & IC Min. VCE IC (V) VCE(sat) @ IC & IB IC IB (A) Max. (V) (A) (A) fT @ VCE & IC Typ. VCE (MHz) (V) Pins Package (A) 123 Reel IC MJD44H11 NPN 8.0 80 20 60 1 2.00 1.00 8.0 0.4 50 10.0
|
Original
|
MJD44H11
MJD45H11
|
PDF
|
MMS8050-L
Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
Text: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.
|
Original
|
MJD31C
MJD32C
MJD42C
MMJD2955
MMJD3055
MMS8050-L
2SB1073R
Bd882
2SD667C
2SD667AC
2SD669AC
sot23-3 marking 63
zt5551
2SD468C
marking 2sd1664
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SMD High Speed Saturated Switching Transistors toff @ IC Part No. MMBT3640 20070515 Polarity PNP VCEO ton Min. Max. Max. IC V (ns) (ns) (mA) 12 25 35 50 hFE @ IC Min. 30 SMD Bipolar Transistors VCE(sat) @ IC & IB IC Max IC (mA) (V) (mA) 10 0.2 10 IB fT Min.
|
Original
|
MMBT3640
|
PDF
|
D40C1
Abstract: D40C2 D40C3 D40C4 D40C5 D40C7 D40C8 D40K1 D40K2 D40K3
Text: Small Signal Darlington Transistors hFE Part No. and Polarity V CEO NPN @ V CE & IC Operating Temperature: -55 o C to 150oC fT VCE sat & VBE(sat) @ IC & IB @ V CE & IC IC PNP Package Min. Max. VCE IC Max. Max. IC IB Min. Outline (Max. in mm or inches) Typ.
|
Original
|
150oC
D40C1
D40C2
D40C3
D40C4
D40C1
D40C2
D40C3
D40C4
D40C5
D40C7
D40C8
D40K1
D40K2
D40K3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: High Speed Metal Can Transistors VCEO Part No. Polarity 2N2369 2N2369A NPN 2N708 2N3467 20070515 PNP sust Min. (V) toff @ Ic ton Max. Max. Ic Bipolar Transistors hFE @ IC VCE(sat) @ IC & IB Max. IC PD fT Package @ Min. IB 25°C (mA) (MHz) (mW) Bulk (ns)
|
Original
|
2N708
2N3467
2N2369
2N2369A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SMD Tuner / Broadband Transistors IC Max SMD Bipolar Transistors Ptot @ Tamb Device VCEO hFE @ VCE& IC fT @ IC GP @ IC & f F @ f & IC PackPart No. Marking Polarity age Code V (mA) (mW) (oC) Typ. (V) (mA) (MHz) (mA) (dB) (mA) (MHz) (dB) (MHz) (mA) BFR90 -
|
Original
|
BFR90
BFR90A
BFR92
BFR92A
BFR93A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product Category IC Memory Microcomputer Particular Purpose IC Semi-custom IC General Purpose Linear IC Diode Transistor Thyristor RF and Microwave Devices CD-ROM X13769XJ2V0CD00 Product name Optical Device Application Road map Main menu
|
Original
|
X13769XJ2V0CD00
|
PDF
|
X13769XJ2V0CD00
Abstract: No abstract text available
Text: Road Map Microcomputer Semi-custom IC Particular Purpose IC General Purpose Linear IC Transistor CD-ROM X13769XJ2V0CD00 Product name Application Product category Main menu
|
Original
|
X13769XJ2V0CD00
X13769XJ2V0CD00
|
PDF
|
JANS2N2484
Abstract: JANS2N3439UA JANS2N3637 transistors SMD npn JANS2N5339U3 JANS2N7373
Text: JANS QUALIFIED BI-POLAR TRANSISTORS* Part # JANS QUALIFIED BI-POLAR TRANSISTORS* Type Voltage hFE @ Ic Rated Ic Package JANS QUALIFIED BI-POLAR TRANSISTORS* JANS QUALIFIED BI-POLAR TRANSISTORS* Part # Slash Sheet Type Voltage hFE @ Ic Rated Ic Package JANS2N930
|
Original
|
JANS2N930
JANS2N930UB
JANS2N2218
JANS2N2218A
JANS2N2218AL
JANS2N2219
JANS2N2219A
JANS2N2219AL
JANS2N2221A
JANS2N2221AL
JANS2N2484
JANS2N3439UA
JANS2N3637
transistors SMD npn
JANS2N5339U3
JANS2N7373
|
PDF
|
2SC3679
Abstract: No abstract text available
Text: 2SC3679 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor 5(Pulse10) A µA 800min V hFE VCE=4V, IC=2A 10 to 30 19.9±0.3 IC VEB=7V IC=10mA 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 100(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A 1.2max
|
Original
|
2SC3679
Pulse10)
100max
800min
75typ
700mA
MT-100
2SC3679
|
PDF
|
2SD2015
Abstract: FM20
Text: 2SD2015 Silicon NPN Triple Diffused Planar Transistor IC 4 A 10max mA VEB=6V IC=10mA 120min hFE VCE=2V, IC=2A 2000min V IB 0.5 A VCE sat IC=2A, IB=2mA 1.5max PC 25(Tc=25°C) W VBE(sat) IC=2A, IB=2mA 2.0max V Tj 150 °C fT VCE=12V, IE=–0.1A 40typ MHz °C
|
Original
|
2SD2015
120min
2000min
40typ
10max
O220F)
2SD2015
FM20
|
PDF
|
|
|
2SD2439
Abstract: 2SB1588
Text: Equivalent circuit 2SD2439 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1588 V IEBO VEB=5V 100max µA V 5 V V(BR)CEO IC 10 A hFE IC=30mA 150min VCE=4V, IC=7A 5000min∗ IC=7A, IB=7mA 2.5max 15.6±0.2 A PC 80(Tc=25°C) W VBE(sat) IC=7A, IB=7mA
|
Original
|
2SD2439
2SB1588)
FM100
100max
150min
5000min
55typ
95typ
2SD2439
2SB1588
|
PDF
|
uPC2581
Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8
|
Original
|
PD7500
X10679EJAV0SG00
MF-1134)
1995P
uPC2581
uPC2002
2sd1557
uPA67C
uPB582
upc1237
uPC317
2P4M PIN DIAGRAM
2SC4328
uPC157
|
PDF
|
sc5 s dc 6v relay
Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997
|
Original
|
Corpora1-504-2860
X10679EJEV0SG00
sc5 s dc 6v relay
P48D-70-600
UPD66010
UPD7752
AC03E
uPD7520
uPA1601
UPD70208H
uPD72020
uPD16503
|
PDF
|
2SC5271
Abstract: 300V regulator FM20
Text: 2SC5271 Silicon NPN Triple Diffused Planar Transistor VCEO 200 V IEBO VEBO 7 V V BR CEO 5(Pulse10) A hFE1 IC VCB=300V 100max µA VEB=7V 100max µA IC=10mA 200min V VCE=2V, IC=2.5A 10 to 30 IB 2 A hFE2 VCE=2V, IC=1mA 15min PC 30(Tc=25°C) W VCE(sat) IC=2.5A, IB=0.5A
|
Original
|
2SC5271
Pulse10)
100max
200min
O220F)
15min
10typ
45typ
2SC5271
300V regulator
FM20
|
PDF
|
2SC5370
Abstract: FM20
Text: 2SC5370 Silicon NPN Epitaxial Planar Transistor 40 V IEBO VEBO 7 V V BR CEO IC 12 A Ratings Unit VCB=60V 10max µA Conditions VEB=7V 10max µA IC=25mA 40min V hFE VCE=2V, IC=6A 70min∗ IB 3 A VCE(sat) IC=6A, IB=0.3A 0.3max PC 30(Tc=25°C) W VBE(sat) IC=6A, IB=0.3A
|
Original
|
2SC5370
10max
40min
70min
90typ
120typ
O220F)
2SC5370
FM20
|
PDF
|
2SD2015
Abstract: FM20 w605
Text: 2SD2015 Silicon NPN Triple Diffused Planar Transistor V BR CEO IC 4 A 10max mA VEB=6V IC=10mA 120min hFE VCE=2V, IC=2A 2000min V IB 0.5 A VCE(sat) IC=2A, IB=2mA 1.5max PC 25(Tc=25°C) W VBE(sat) IC=2A, IB=2mA 2.0max V Tj 150 °C fT VCE=12V, IE=–0.1A 40typ
|
Original
|
2SD2015
2000min
40typ
100ms
150x150x2
50x50x2
2SD2015
FM20
w605
|
PDF
|
2SC5370
Abstract: FM20 2402 transistor
Text: 2SC5370 Silicon NPN Epitaxial Planar Transistor 40 V IEBO VEBO 7 V V BR CEO IC 12 A 2SC5370 Unit VCB=60V 10max µA Conditions VEB=7V 10max µA IC=25mA 40min V hFE VCE=2V, IC=6A 70min∗ IB 3 A VCE(sat) IC=6A, IB=0.3A 0.3max PC 30(Tc=25°C) W VBE(sat) IC=6A, IB=0.3A
|
Original
|
2SC5370
10max
40min
70min
90typ
120typ
O220F)
2SC5370
FM20
2402 transistor
|
PDF
|
smd marking ly
Abstract: hFE CLASSIFICATION Marking 2SC4116 marking LG -sot23 -led SMD LY smd ic marking LY
Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC4116 Features High voltage and high current: VCEO = 50 V, IC = 150 mA max . Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ). High hFE: hFE = 70 700. Low noise: NF = 1dB (typ.), 10dB (max).
|
Original
|
2SC4116
100mA,
smd marking ly
hFE CLASSIFICATION Marking
2SC4116
marking LG -sot23 -led
SMD LY
smd ic marking LY
|
PDF
|
BC351
Abstract: No abstract text available
Text: CRO BC351 PNP SILICON TRANSISTOR TO-92A DESCRIPTION BC351is PNP silicon planar transistor designed for AF small signal amplifier stages. EBC M CO , II o CONDITIONS IC = lmA IC = 100j*A IE=0 IE = 100 uA IC=0 VCB=20V IE=0 VCE=5V IC=2mA IC=2mA VCE=5V IC=2mA VCE=5V
|
OCR Scan
|
BC351is
BC351
O-92A
100mA
300mW
300/uS,
100MHz
Aug-97
BC351
|
PDF
|
STRD3030
Abstract: TRANSISTOR d3000 STR-D3035 d3000 STR-D3030 STR-D3000 STRD3035 D3013 STR-D3015 STRD3015
Text: SANKEN ELECTRIC COMPANY, LTD. SANKEN LINEAR REGULATOR HYBRID IC Type: STR-D3000 1. Scope: The present specifications shall only apply to Sanken Linear Regulator Hybrid IC, STR-D3000. 2. General: 2.1 Category: Hybrid IC 2.2 Construction: Hybrid IC based on the Silicon 3-layer Planar Transistor.
|
OCR Scan
|
STR-D3000
STR-D3000.
STR-D3010
3f-02
D3000
SSE-16436E
STRD3030
TRANSISTOR d3000
STR-D3035
STR-D3030
STR-D3000
STRD3035
D3013
STR-D3015
STRD3015
|
PDF
|
