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    IC M 224 TO 220 Search Results

    IC M 224 TO 220 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    IC M 224 TO 220 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    P140

    Abstract: uPD78F1500 VT-200
    Text: 78K0R/Lx3 24-Feb-09 Evaluation of a Low Frequency Clock Oscillation Circuit VT-200-FL 6.0pF uPD78F1505GC-16BT [LQFP 14x14 0.5mm pitch] Measurement conditions : 3.0V New Model VT-200-FL Vdd=1.8 to 5.5V :VT-200-FL IC Frequency :Fo=32.768kHz Frequency tolerance


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    78K0R/Lx3 24-Feb-09 VT-200-FL uPD78F1505GC-16BT 14x14) VT-200-FL 768kHz /-20x10-6 1x10-6F P140 uPD78F1500 VT-200 PDF

    BLV31

    Abstract: No abstract text available
    Text: i, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLV31 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: 45 -^ -C BLV31 is Designed for use in VHF amplifiers r~v B


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    BLV31 BLV31 PDF

    VC10F 270

    Abstract: No abstract text available
    Text: Series VC Material Specilications C oating C onform al vitreous enam el Core C eram ic Term inals T inned leads, solderable to M IL -R -26 standards W eight V C3D VC5E VC10F 3 w att .032 oz. .896 gm s. 5 w att .096 oz. 2.69 gms. 10 w att .224 oz. 6.27 gms.


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    VC10F VC10F 270 PDF

    IC M 224

    Abstract: ASE SiP
    Text: in»«« clcklfOflik 2 3 A ttachable h eatsink Rth [K/W] art. no. FK 220 SA 220 25 TO 220 surface: black anodised Rth [K/W] art. no. FK 224 . P SIP Rth [K/W] art. no. FK FK FK FK 224 224 224 224 . 218 . 218 . 220 . 220 P SIP H 1 2 1 2 ple ase indicate:


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    PDF

    BJ3159AC

    Abstract: raychem 10602 wire TAI-173
    Text: m m u m o rig in al DASH NO -201 -202 -203 -204 -205 -206 -207 -208 -209 -210 -211 -212 -213 -214 -215 -216 -217 -218 -219 -220 -221 -222 -223 -224 -225 CABLES ACCOMMOOATEO Ml 1 / 176-00002 TWC-78-1 TWC-124-1A 10602,RAYCHEM TWAC-78-1F2 782600130,RAYCHEM 83310 BELDEN


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    TWC-78-1 TWC-124-1A TWAC-78-1F2 2S24E0114 TWC-78-2 C-124-2 BL-982 BL-1242 GC875TM24H 221B8B BJ3159AC raychem 10602 wire TAI-173 PDF

    lc 5013

    Abstract: No abstract text available
    Text: KSC5021F NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TO-220F • HIGH SPEED SWITCHING : tf = 0.1us Typ • WIDE SOA ABSO LUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emltter Voltage Rating Unit VcBO 800 V CEO 500


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    KSC5021F O-220F lc 5013 PDF

    Untitled

    Abstract: No abstract text available
    Text: 6 TH IS D R A W IN G IS U N P U B L I S H E D . C O P Y R IG H T RELEASED B Y TYCO E L E C T R O N IC S C O R P O R A T IO N , FOR 5 4 2 4 P U B L IC A T IO N A LL R IG H TS RESERVED. 1 RAISED CAVITY IDENTIFICATION NUMBER LOC DIST D DO R E V IS IO N S P


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    220CT08 MS18P76-P MS18277-2 GST-40E MIL-M-24519 TPES013G30 D5927 IL-C-39029 MIL-DTL-24308, ASTM-B-488 PDF

    74hc294

    Abstract: SN74HC294 C294 5-12FR
    Text: HIGH-SPEED CM OS LOGIC TYPES SN54HC292, SN54HC294, SN74HC292. SN74HC294 PROGRAMMABLE FREQUENCY DIVIDERS/DIGIT AL TIMERS D 2 80 4, M A R C H 1984 • Count Divider Chain • Digitally Programmable from 22 to 231 for 'H C2 9 2 or 215 for HC294 SN 5 4 H C 2 9 2 . . . J P A C K A G E


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    SN54HC292, SN54HC294, SN74HC292. SN74HC294 HC294 7526S 74hc294 C294 5-12FR PDF

    IRL640

    Abstract: No abstract text available
    Text: IRL640 A dvanced Power MOSFET FEATURES BVdss = 200 V ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ^DS on = ♦ Rugged Gate Oxide Technology lD = 0.1 8f 2 18 A ♦ Lower Input Capacitance ♦ Improved Gate Charge TO-220 ♦ Extended Safe Operating Area


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    IRL640 IRL640 PDF

    IRL640A

    Abstract: No abstract text available
    Text: IRL640A A dvanced Power MOSFET FEATURES BVdss = 200 V ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ^DS on = ♦ Rugged Gate Oxide Technology lD = 0.1 8f 2 18 A ♦ Lower Input Capacitance ♦ Improved Gate Charge TO-220 ♦ Extended Safe Operating Area


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    IRL640A IRL640A PDF

    74LS 219

    Abstract: No abstract text available
    Text: TYPES SN54LS292, SN54LS294, SN74LS292, SN74LS294 PROGRAMMABLE FREQUENCY DIVIDERS/DIGITAL TIMERS D 2 6 2 8 , J A N U A R Y 1 9 8 1 -R E V iS E D D E C E M B E R 1983 SN54LS292 . J OR W PACKAGE J OR N PACKAGE SN74LS292 • * OP VIEW Count Divider Chain Digitally Programmable from 22 to 2n


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    SN54LS292, SN54LS294, SN74LS292, SN74LS294 LS292, LS294) LS292I LS292 74LS 219 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TC74HC7292AP/AF TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT Tr7AHr77Q7AP m M m m m m/F m ma g SILICON MONOLITHIC TC7Ú. UC7 7 QJ A P m a m m m m m ma PROGRMMABLE DIVIDER/TIM ER The TC74HC7292A is a high speed CMOS PROGRAMMABLE DIVIDER / TIMER fabricated with silicon gate C2MOS


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    TC74HC7292AP/AF Tr7AHr77Q7AP TC74HC7292A 16PIN DIP16-P-300-2 16PIN 200mil OP16-P-300-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 7 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED A LL C O P Y R IG H T N /A By FO R P U B L IC A T IO N RIG HTS 5 6 4 3 2 , N /A LOC -2 1 2 3 SEE DETAIL K R E V IS IO N S D IS T DF R E S ER VE D . AO LTR D E S C R IP T IO N 0,040 + ,003 [1,02 + 0,08]


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    B2013 PDF

    Untitled

    Abstract: No abstract text available
    Text: 7 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED A LL C O P Y R IG H T N /A By FO R P U B L IC A T IO N RIG HTS 5 6 4 3 2 , N /A LOC -2 1 2 3 SEE DETAIL K R E V IS IO N S D IS T DF R E S ER VE D . AO LTR 0,040 + ,003 [1,02 + 0,08] TYP D E S C R IP T IO N


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    B2013 PDF

    Untitled

    Abstract: No abstract text available
    Text: 7 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED A LL C O P Y R IG H T N /A By FO R P U B L IC A T IO N RIG HTS 5 6 4 3 2 , N /A LOC -2 1 2 3 SEE DETAIL K R E V IS IO N S D IS T DF R E S ER VE D . AO LTR 0,030 + ,003 [ , 7 6 + 0,08] TYP D E S C R IP T IO N


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    05FEB2013 PDF

    Untitled

    Abstract: No abstract text available
    Text: 7 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED A LL C O P Y R IG H T N /A By FO R P U B L IC A T IO N RIG HTS 5 6 4 3 2 , N /A LOC DF R E S ER VE D . -2 1 2 3 SEE DETAIL K 2 EER RECEMMENDED P,C, BEARD LAYEUT, TRUE APVD 05FEB 2013 MGM CT PESITIEN


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    05FEB PDF

    SM 933

    Abstract: No abstract text available
    Text: M U LTILA Y E R CERAM IC CHIP CAPACITORS • INTRODUCTION The Multilayer Ceram ic Capacitors are constructed by screen printing alternative layers of internal metallic electrodes onto ceram ic dielectric materials and firing into a concrete monolithic body, then com pleted by


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    010/iF 1000pF 010/tF SM 933 PDF

    Belden 1670

    Abstract: BL1242 BL-1242 til 216 red B-3310 14949 TAI-206 178-00002
    Text: RED INDICATES ORIGINAL DWG pat* UC DASH NO -201 -202 -203 -204 -205 -205 -207 -208 -209 -210 -211 -212 -213 -214 -215 -216 -217 -21B -219 -220 -221 -222 -223 -224 -225 TABLE 1 CABLES ASSEMBLE ACCOMMODATED PER M17/176-00002 TWC-7B-1 TWC-124-1A 10502, RAYCHEM


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    M17/176-00002 TWC-124-1A 7B26D0130, B3310, 2524E0114, TAI-206 TWC-124-2 BL1242, GCB75TM24H, EOP221B0B Belden 1670 BL1242 BL-1242 til 216 red B-3310 14949 178-00002 PDF

    fusible Am

    Abstract: oma0207
    Text: EIN UNTERNEHMEN VON METAL FILM Fusible type NMA.SÎ D R i^ p R IC " F e a tu re s 9 fusible function at constant current load Ri> 6 i2 for R n < 10 H; Ri > 1 Q for RN > 10 Q 4fcU» • high positive T.C. • defined cut-off behaviour • current limit Style


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    NMA0207SÌ NMA0309SÌ NMA0411Si LCS0207 LCE0207 fusible Am oma0207 PDF

    P112

    Abstract: TIP111 darlington npn tip 102 TIP110 TIP112 TIP115 TIP116
    Text: TIP110 TIP111 TIP112 PHILIPS INTERNATIONAL SbE D • 711002b 0043550 224 ■ PHIN T -3 3 -Z SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in m onolithic Darlington circu it fo r audio o u tp u t stages and general purpose am plifier and switching applications. T 0-220A B plastic envelope. P-N-P complements are


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    TIP110 TIP111 711002b T-33-Z T0-220AB TIP115, TIP116 TIP111 TIP112 P112 darlington npn tip 102 TIP112 TIP115 PDF

    74hc7294

    Abstract: 74HC7292 ic 7294 HC7294 74hc729 C7292 74*7292 PHL 218 74h 132 2416H
    Text: SGS-THOMSON M 54/74H C 7292 M 54/74H C 7294 PROGRAMMABLE DIVIDER/TIMER • LOW POWER DISSIPATION IC C = 4 MAX. at TA = 25°C ■ H IG H N O IS E IM M U N IT Y V n ih = V n il = 28»/o V CC (M IN .) ■ OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS ■ SYMMETRICAL OUTPUT IMPEDANCE


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    M54/74HC7292 M54/74HC7294 54/74LS292/294 54/74HC7292 54/74HC7294 M54/74H C7292 M54/74HC7292/7294 HC792 74hc7294 74HC7292 ic 7294 HC7294 74hc729 C7292 74*7292 PHL 218 74h 132 2416H PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA LOGIC/MEMORY IME 0 | l O T O M S DQlai.32 1 | i _ TC74HC7292P TC74HC7294P TC74HC7292P TC74HC7294P PROGRAMMABLE DIVIDER/TIMER PROGRAMMABLE DIVIDER/TIMER ^ T - 4 ^ - z V 3 S The TC74HC7292 and TC74HC7294 are high speed CMOS PROGRAMMABLE DIVIDER/TIMER


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    TC74HC7292P TC74HC7294P TC74HC7292 TC74HC7294 TC74HC7 TC74HC7292P_ PDF

    BD2428

    Abstract: HEP transistors
    Text: BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS CopyrjgHI O 1997, Power Innovations Limited, UK JU N E 1973 - REVISED M ARCH 1997 D esigned for Complementary U m with the BD241 Series T 0-220 PA C KA G E TOP VIEW 40 W at 25°C C ase Temperature


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    BD242, BD242A, BD242B, BD242C BD241 BD242 BD242A 8D242B BD2428 HEP transistors PDF

    3483-1R5M

    Abstract: 3483-3R3M
    Text: Series 3483 & S3483 Surface Mount Power Inductors j SERIES 3483 - UNSHIELDED mi 3483-1 ROM 3483-1R5M 3483-2R2M 3483-3R3M 3483-4R7M 3483-6R8M 3483-100M 3483-120M 3483-150M 3483-180M 3483-220M 3483-270M 3483-330M 3483-390M 3483-470M 3483-560M 3483-680M 3483-820M


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    S3483 S3483-S3483-S3483- S3483-101M 3483-1R5M 3483-3R3M PDF