DFT301-801X7R102S50
Abstract: DFT301-801X7R S21-Frequency DFT301801X7R GRM39 GRM40 marking C8 amplifier ghz transmitter receiver 35369
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8204TK VARIABLE GAIN AMPLIFIER FOR TRANSMITTER AGC DESCRIPTION The µPC8204TK is a silicon monolithic integrated circuit designed as variable gain amplifier. The package is 6-pin lead-less minimold suitable for surface mount.
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PC8204TK
PC8204TK
PC8119T
PC8120T,
DFT301-801X7R102S50
DFT301-801X7R
S21-Frequency
DFT301801X7R
GRM39
GRM40
marking C8 amplifier
ghz transmitter receiver
35369
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Untitled
Abstract: No abstract text available
Text: 34S SERIES DATA SHEET METAL OXIDE VARISTOR – 34S SERIES FEATURE Wide operating voltage V1mA range from 33V to 1600V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no follow-on current.
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J-STD-020
821KS34
911KS34
951KS34
102KS34
112KS34
122KS34
142KS34
162KS34
15-Feb-12
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Untitled
Abstract: No abstract text available
Text: 53ĭ SERIES DATA SHEET METAL OXIDE VARISTOR – 53ĭ SERIES FEATURE Wide operating voltage V1mA range from 33V to 1600V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no follow-on current.
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J-STD-020
Eleme500
821KD53
911KD53
951KD53
102KD53
112KD53
122KD53
142KD53
162KD53
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Untitled
Abstract: No abstract text available
Text: 34S SERIES DATA SHEET ZINC OXIDE VARISTOR – 34 S SERIES FEATURE Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.
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821KS34
911KS34
951KS34
102KS34
112KS34
122KS34
142KS34
162KS34
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Untitled
Abstract: No abstract text available
Text: 32ĭ SERIES DATA SHEET METAL OXIDE VARISTOR – 32ĭ SERIES FEATURE Wide operating voltage V1mA range from 33V to 1600V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no follow-on current.
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J-STD-020
821KD32
911KD32
951KD32
102KD32
112KD32
122KD32
142KD32
162KD32
15-Feb-12
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Untitled
Abstract: No abstract text available
Text: 32Φ SERIES DATA SHEET ZINC OXIDE VARISTOR – 32 Φ SERIES FEATURE Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.
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821KD32
911KD32
951KD32
102KD32
112KD32
122KD32
142KD32
162KD32
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Untitled
Abstract: No abstract text available
Text: 32Φ SERIES DATA SHEET METAL OXIDE VARISTOR – 32Φ SERIES FEATURE Wide operating voltage V1mA range from 33V to 1600V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no follow-on current.
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821KD32
911KD32
951KD32
102KD32
112KD32
122KD32
142KD32
162KD32
ul-11
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Untitled
Abstract: No abstract text available
Text: 32Φ SERIES DATA SHEET ZINC OXIDE VARISTOR – 32 Φ SERIES FEATURE Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.
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821KD32
911KD32
951KD32
102KD32
112KD32
122KD32
142KD32
162KD32
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Untitled
Abstract: No abstract text available
Text: 53Φ SERIES DATA SHEET ZINC OXIDE VARISTOR – 53 Φ SERIES FEATURE Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.
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SERI1450
821KD53
911KD53
951KD53
102KD53
112KD53
122KD53
142KD53
162KD53
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Untitled
Abstract: No abstract text available
Text: 40ĭ SERIES DATA SHEET METAL OXIDE VARISTOR – 40ĭ SERIES FEATURE Wide operating voltage V1mA range from 33V to 1600V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no follow-on current.
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J-STD-020
821KD40
911KD40
951KD40
102KD40
112KD40
122KD40
142KD40
162KD40
15-Feb-12
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Untitled
Abstract: No abstract text available
Text: 40Φ SERIES DATA SHEET ZINC OXIDE VARISTOR – 40 Φ SERIES FEATURE Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.
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821KD40
911KD40
951KD40
102KD40
112KD40
122KD40
142KD40
162KD40
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T902 transformer
Abstract: TRANSFORMER T902
Text: DATA SHEET "• V y • - 7 - : > w - . •. - r4 . \ a p r il , 1996 LXT902 Ethernet Twisted-Pair Media Attachment Unit T he LX T902 tw isted-pair M edia A ttachm ent U n it TPM A U is designed to allow E thernet connections to use the existing tw isted-pair w iring plant through an E thernet A t
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LXT902
LXT902
000133b
T902 transformer
TRANSFORMER T902
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zenamic
Abstract: zenamic Z 330 zenamic 220 Oneida Electronic MFG 2SA50A 0Z7L101 0Z7L220 0Z7L330 0Z7L560 0Z7L680
Text: ONEIDA ELECTRONIC MFfi I NC 6792335 Sfl ONEIDA ELECTRON IC dËT| ^,7 ^ 3 3 5 MFG INC 58C 0030Ô D 0 D D 3 DD T - / / - ¿ S ’ #4 Data Sheet No. a - io i nelda F 1 Ie # E 7 l2 2 ° Z e n a m ia * Z-MOV Transient Voltage Suppressors Z7, ZIO, ZI5.Z2I.&Z33 SERIES
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E7l22Â
7TE33S
POBOX678
zenamic
zenamic Z 330
zenamic 220
Oneida Electronic MFG
2SA50A
0Z7L101
0Z7L220
0Z7L330
0Z7L560
0Z7L680
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zenamic 220
Abstract: zenamic 910-820 zenamic Z 330 Oneida Electronic MFG Transient Voltage Suppressors 340 V 0Z7L101 0Z7L121 0Z7L220 0Z7L270
Text: ONEIDA ELECTRONIC MFfi INC 6792335 Sfl ONEI DA ELECTRONI C d ËT| ^,7^335 D0DD3DD 7 f MFG INC 58C 0 0 3 0 Ô T - / / - ¿ S #4 Data Sheet No. a - i o i nelda F 1 Ie # E 7 l2 2 ° Z e n a m ia * Z-MOV Transient Voltage Suppressors Z7, ZIO, ZI5.Z2I.&Z33 SERIES
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E7l22Â
7TE33S
zenamic 220
zenamic
910-820
zenamic Z 330
Oneida Electronic MFG
Transient Voltage Suppressors 340 V
0Z7L101
0Z7L121
0Z7L220
0Z7L270
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TIP3055T
Abstract: No abstract text available
Text: D E V E L O P M E N T DATA TIP3055T T S ? -!' T his data sheet contains advance inform ation and specifications are subject to change w ithout notice. SbE D PHILIPS INTERNATIONAL 711GflEb DGM3t.m 174 PHIN SILICON EPITAXIAL-BASE POWER TRANSISTOR N-P-N transistor in a plastic envelope. With its p-n-p complement T IP2955T they are primarily intended
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TIP3055T
711GflEb
IP2955T
TIP3055T
711002b
0043blb
T--33--13
7110fl2b
0D43bl?
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TIP3055T
Abstract: TIP2955T IEC134 TIP2955 transistor x 313
Text: DEVELO PM ENT DATA This data sheet contains advance in fo rm a tio n and TIP3055T specifications are subject to change w ith o u t notice. 7 - 3 3-13 PHILIPS SbE INTERNATIONAL D 7110fl2b G G M B b m 174 IPHIN SILICON EPITAXIAL-BASE POWER TRANSISTOR N-P-N transistor in a plastic envelope. W ith its p-n-p complement T IP 2 9 5 5 T they are prim arily intended
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TIP3055T
7110fl2b
43Lj14
TIP2955T
O-220.
711Dfl2b
T-33-13
IEC134
TIP2955
transistor x 313
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Untitled
Abstract: No abstract text available
Text: GEIMNUM _ qm C O R P O R A T I GENLINX I I G S 9 0 2 5 Serial Digital Receiver OI M PRELIMINARY DATA SHEET S TA N DA RD FEATURES D ES C R IPTIO N fully com patible with SMPTE 259M and operational to 540 Mb/s autom atic cable equalization typically greater than
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applic-7700
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Untitled
Abstract: No abstract text available
Text: D E V E L O P M E N T DATA TIP3055T This data sheet contains advance information and specifications are subject to change without notice. SILICON EPITAXIAL-BASE POWER TRANSISTOR N-P-N transistor in a plastic envelope. With its p-n-p complement TIP295ST they are primarily intended
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TIP3055T
TIP295ST
O-220
bbS3R31
0D3SQ31
003S032
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Untitled
Abstract: No abstract text available
Text: GENNUM G □ R P Q R A T I □ GENLINX II GS9035 Serial Digital Reclocker N PRELIMINARY DATA SHEET STANDARD FEATURES DEVICE DESCRIPTION • • adjustment-free operation auto-rate selection for 5 SMPTE data rates: The GS9035 is a high perform ance clock and data recovery
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GS9035
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ADS902
Abstract: No abstract text available
Text: B U R R - BRO W N C [ ADS902 ] 10-Bit, 30MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION • • • • The A D S 902 is a high speed pipelined analog-todigital converter that is specified to operate from a single + 5 V supply. This converter includes a wide
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ADS902
10-Bit,
30MHz
10-bit
130mW
28-PIN
ADS902
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marking C1s
Abstract: PC2747 SUPER CAPACITOR BASED CIRCUIT MPC2747TB-E3
Text: PRELIMINARY DATA SHEET_ M F f ~ / BIPOLAR ANALOG INTEGRATED CIRCUITS / //PC2747TB, /¿PC2748TB 3 V, SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The /iPC2747TB, /¿PC2748TB are silicon monolithic integrated circuits designed as amplifier, for mobile
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uPC2747TB
uPC2748TB
/iPC2747TB,
PC2748TB
/JPC2747T,
//PC2748T
PC2747TB,
iPC2748TB
marking C1s
PC2747
SUPER CAPACITOR BASED CIRCUIT
MPC2747TB-E3
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TIP3055T
Abstract: USA060-1 transistor 8771 transistor 902
Text: DEVELOPMENT DATA TIP3055T T h is data sheet contains advance inform ation and «peclfleationi are subject to change w ithout notice. SILICON EPITAXIAL-BASE POWER TRANSISTOR N-P-N transistor in a plastic envelope. W ith its p-n-p complement T IP 2 9 5 S T they are prim arily intended
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TIP3055T
TIP295ST
T0-220.
bb53T31
003S03E
TIP3055T
USA060-1
transistor 8771
transistor 902
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aui rj45
Abstract: LXT902PC
Text: DATA SHEET APRIL, 1996 LXT902 Ethernet Twisted-Pair Media Attachment Unit The LXT902 twisted-pair Media Attachment Unit TPM A U is designed to allow Ethernet connections to use the existing twisted-pair wiring plant through an Ethernet A t tachment Unit Interface (A U I). The LXT902 provides the
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LXT902
LXT902
S-T902-0696-5K
aui rj45
LXT902PC
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Untitled
Abstract: No abstract text available
Text: Data Sheet [^ WiDIGICS AWT0903X TX POWER MMIC Your GaAs IC Source Advanced Product Information Rev 3 900 MHz Band ETACS GaAs Power Amplifier IC DESCRIPTION The AWT0903X Is a monolithic Power Am plifier suited for ETACS cellular telephone applications in a plastic package, reducing both size and cost
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AWT0903X
AWT0903X
AWT0903
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