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    IC 9016 Search Results

    IC 9016 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
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    IC 9016 Price and Stock

    Yamaichi Electronics Co Ltd IC189-0162-019

    IC & Component Sockets 16 PIN SOP, 1.27 MM PITCH
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    Mouser Electronics IC189-0162-019 22
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    TE Connectivity TXR40AC90-1606AI-CS8055

    Circular MIL Spec Strain Reliefs & Adapters TXR40AC90-1606AI-CS8055
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    Mouser Electronics TXR40AC90-1606AI-CS8055
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    TE Connectivity TXR41AB90-1608AI-CS8010

    Circular MIL Spec Backshells TXR41AB90-1608AI-CS8010
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    Mouser Electronics TXR41AB90-1608AI-CS8010
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    • 100 $95.27
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    TE Connectivity TXR41AB90-1604AI-CS8010

    Circular MIL Spec Backshells TXR41AB90-1604AI-CS8010
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TXR41AB90-1604AI-CS8010
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    • 10 $117.5
    • 100 $95.27
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    IC 9016 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6438

    Abstract: No abstract text available
    Text: 2N6438 Power Transistor Designed for use in industrial power amplifiers and switching circuit applications. Features: • High DC Current Gain. • hFE = 20 - 80 at IC = 10A = 12 Minimum at IC = 25A. • Low Collector-Emitter Saturation Voltage. VCE(sat) = 1.0V (Maximum) at IC = 10A, IB = 1.0A.


    Original     		PDF 2N6438 2N6438

    NPN power transistor 15A amperes

    Abstract: transistor 2N5884 2N5886 COMPLEMENTARY SILICON POWER TRANSISTORS transistor equivalents 2n5884 2N5884 2v31
    Text: 2N5884 & 2N5886 Complementary Power Transistors General-purpose power amplifier and switching applications. Features: • Low Collector-Emitter Saturation Voltage VCE sat = 1.0V (Maximum) at IC = 15A. • Excellent DC current Gain hFE = 20 ~ 100 at IC = 10A.


    Original     		PDF 2N5884 2N5886 NPN power transistor 15A amperes transistor 2N5884 2N5886 COMPLEMENTARY SILICON POWER TRANSISTORS transistor equivalents 2n5884 2N5884 2v31

    NPN power transistor 15A amperes

    Abstract: 2N5880 2N5882 AMP UK 45 COMPLEMENTARY SILICON POWER TRANSISTORS
    Text: 2N5880 & 2N5882 Complementary Power Transistors General-purpose power amplifier and switching applications. Features: • Low Collector-Emitter Saturation Voltage VCE sat = 1.0V (Maximum) at IC = 7.0A • Execellent DC current Gain hFE = 20 - 100 at IC = 6.0A


    Original     		PDF 2N5880 2N5882 2N5880 NPN power transistor 15A amperes 2N5882 AMP UK 45 COMPLEMENTARY SILICON POWER TRANSISTORS

    IC51-128

    Abstract: transistor fpq 630 PC-68 TTP-48DF OF IC 7421 Enplas fpq Enplas PT740 AB am fm radio Hitachi DSAUTAZ005
    Text: Hitachi Semiconductor Package Data Book Introduction Contents Section 1 Introduction of Packages 1.1 Types of Packages and Advantages 1.2 IC Package Name and Code Indication 1.3 Method of Indicating IC Package Dimensions 1.4 Lineups in Terms of Shapes and Materials


    Original     		PDF

    2N6054

    Abstract: 2N6056
    Text: 2N6054/2N6056 Darlington Transistors Features: • General-purpose power amplifier and low frequency switching applications. • Low Collector-Emitter Saturation Voltage VCE SAT = 2.0V (Maximum) at IC = 4.0A = 3.0V (Maximum) at IC = 8.0A • Monolithic construction with Built-in Base-Emitter Shunt Resistors.


    Original     		PDF 2N6054/2N6056 2N6056 2N6054 2N6054 2N6056

    tip29 equivalent

    Abstract: tip30c TIP29 TIP29A TIP29C TIP30A 9016 pnp transistor Power Bipolar Transistor
    Text: TIP29, 30 High Power Bipolar Transistor Features: • Collector-Emitter sustaining voltageVCEO sus = 60V (Minimum) - TIP29A, TIP30A = 100V (Minimum) - TIP29C, TIP30C. • Collector-Emitter saturation voltageVCE(sat) = 0.7V (Maximum) at IC = 1.0A. • Current gain-bandwidth product fT = 3.0MHz (Minimum) at IC = 200mA.


    Original     		PDF TIP29, TIP29A, TIP30A TIP29C, TIP30C. 200mA. TIP30C TIP29A TIP29C tip29 equivalent tip30c TIP29 TIP29A TIP29C TIP30A 9016 pnp transistor Power Bipolar Transistor

    MJ4502

    Abstract: MJ4502 EQUIVALENT transistor mj4502 A3105
    Text: MJ4502 Power Transistor High-Power PNP Silicon Transistor is used as an output device in complementary audio amplifiers to 100 Watts music power per channel. Features: • Continuous Collector Current - IC = 30A. • High DC Current Gain - hFE = 25 - 100 at IC = 7.5A.


    Original     		PDF MJ4502 750mA. MJ4502 MJ4502 EQUIVALENT transistor mj4502 A3105

    200 Ampere power transistor

    Abstract: 2n3055 malaysia 2n3055 collector characteristic curve 2N3055 curve 2N3055 NPN Transistor 2N3055 2n3055 TRANSISTOR 530 TRANSISTOR 2n3055 2n3055 Power Transistor NPN
    Text: Silicon Power Transistor Features: • • • • Power dissipation - PD = 115W at TC = 25°C. DC current gain hFE = 20 ~ 70 at IC = 4.0A. VCE Sat = 1.1V (maximum) at IC = 4.0 A, IB = 400mA. Designed for use in general-purpose amplifier and switching applications.


    Original     		PDF 400mA. 2N3055 200 Ampere power transistor 2n3055 malaysia 2n3055 collector characteristic curve 2N3055 curve 2N3055 NPN Transistor 2N3055 2n3055 TRANSISTOR 530 TRANSISTOR 2n3055 2n3055 Power Transistor NPN

    TIP32 NPN Transistor

    Abstract: TIP32 equivalent 1462, TRANSISTOR TIP32C equivalent equivalent transistor tip31c TIP31c PNP Transistor tip31C-tip32C TIP31 EQUIVALENT transistor 7333 TRANSISTOR TIP31
    Text: TIP31, TIP32 High Power Bipolar Transistor Features: • Collector-Emitter sustaining voltage VCEO sus = 60V (Minimum) - TIP31A, TIP32A = 100V (Minimum) - TIP31C, TIP32C. • Collector-Emitter saturation voltage VCE(sat) = 1.2V (Maximum) at IC = 3.0A. • Current gain-bandwidth product fT = 3.0MHz (Minimum) at IC = 500mA.


    Original     		PDF TIP31, TIP32 TIP31A, TIP32A TIP31C, TIP32C. 500mA. TIP32C TIP31A TIP32 NPN Transistor TIP32 equivalent 1462, TRANSISTOR TIP32C equivalent equivalent transistor tip31c TIP31c PNP Transistor tip31C-tip32C TIP31 EQUIVALENT transistor 7333 TRANSISTOR TIP31

    MJ802

    Abstract: Transistor 358 to3 200 watt audio amplifier with ic high power transistor transistor 9016 npn transistor MJ802
    Text: MJ802 High Power Transistor For use as an output device in complementary audio amplifiers to 100 Watts music power per channel. Features: • Continuous Collector Current - IC = 30A. • High DC Current Gain - hFE = 25 -100 at IC = 7.5A • Excellent Safe Operating Area


    Original     		PDF MJ802 750mA. MJ802 Transistor 358 to3 200 watt audio amplifier with ic high power transistor transistor 9016 npn transistor MJ802

    2n3055 malaysia

    Abstract: DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2n3055 pnp MJ2955 300 watts amplifier 2n3055 IC 2N3055 curve 2N3055 MJ2955 TRANSISTOR 2n3055 collector characteristic curve
    Text: 2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation - PD = 115W at TC = 25°C. • DC current gain hFE = 20 to 70 at IC = 4.0A. • VCE sat = 1.1V (Maximum) at IC = 4.0A, IB = 400mA.


    Original     		PDF 2N3055, MJ2955 400mA. 2N3055 2n3055 malaysia DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2n3055 pnp MJ2955 300 watts amplifier 2n3055 IC 2N3055 curve 2N3055 MJ2955 TRANSISTOR 2n3055 collector characteristic curve

    dtl logic gates

    Abstract: ttl NAND gate circuit series inverter circuit diagrams 9000 ttl 930 series dtl ttl NAND gate with expander K 9008 TTL 7430 6 a 8 mic 4 pin mic circuit
    Text: Logic Integrateci Circuits, MIC 9 0 0 0 Series TTL C irc u it F unctions Compatible w ith M IC 930 Series DTL and other TTL and DTL Series M IC M IC M IC M IC M IC M IC M IC M IC M IC M IC M IC M IC M IC 9000 9001 9002 9003 9004 9005 9006 9007 9008 9009 9012


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: H a rris s e m ic o n d u c to r IC L 7 1 0 6 , IC L 7 1 0 7 IC L 7 1 0 6 S , IC L 7 1 0 7 S 3 a/2 Digit, LCD/LED Display, A/D Converters August 1997 Features • Description Guaranteed Zero Reading for OV Input on All Scales • True Polarity at Zero for Precise Null Detection


    OCR Scan     		PDF ICL7106, ICL7107 ICL7106 ICL7107 CD4077

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    ICL7136

    Abstract: ICL7137CPL pj 999 diode PCEF ICL7136RCPL AN032 Understanding the Auto-Zero and Common Harris AN023 ICL7137 ICL7126 ICL7136CM44
    Text: IC L 713 6 , IC L 7 1 3 7 S em iconductor D e cem b er 3 1/2 Digit LCD/LED, Low Power Display, A/D Converters with Overrange Recovery 1997 Features Description • First Reading Overrange Recovery in One Conversion Period • Guaranteed Zero Reading for OV Input on All Scales


    OCR Scan     		PDF ICL7136, ICL7137 ICL7136 ICL7126, 5M-1982. ICL7136 ICL7137CPL pj 999 diode PCEF ICL7136RCPL AN032 Understanding the Auto-Zero and Common Harris AN023 ICL7137 ICL7126 ICL7136CM44

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


    OCR Scan     		PDF TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485

    Untitled

    Abstract: No abstract text available
    Text: S IC L 7136, IC L 7 1 3 7 3 1/2 Digit LCD/LED, Low Power Display, A/D Converters with Overrange Recovery August 1997 Description Features • • • • • • • • • • • First Reading Overrange Recovery in One Conversion Period Guaranteed Zero Reading for OV Input on All Scales


    OCR Scan     		PDF ICL7136 ICL7137 15nVp ICL7126, ICL7136,

    kec kta

    Abstract: 9014 kec KTA966A 966a transistor 9012 TRANSISTOR 9014 KTC388A 2236A KTC2120 KTC2068
    Text: 0 TV TRANSISTOR ELECTRICAL CHARACTERISTICS Ta = 25 C MAXIMUM RATINGS USE TYPE VCEO (V) lC (mA) VCE (sat) MAX hFE TJ ICBO (mW) <°C) ( m A) VCB (V) PC [E (mA) VCE (V) ic (mA) (V) C o b ,* Crc Typ (MIN) h (MHz) VCE (V) 1c (mA) - (400) 10 4 Ic (mA) Iß (mA)


    OCR Scan     		PDF 382/KTN 383/KTN 88A/KTN 2229/KTN O-92A) KTC90U KTC9013 kec kta 9014 kec KTA966A 966a transistor 9012 TRANSISTOR 9014 KTC388A 2236A KTC2120 KTC2068

    Untitled

    Abstract: No abstract text available
    Text: IC L 7 1 1 6 , IC L 7 1 1 7 h a r r i s S E M I C O N D U C T O R " mm " " " } " " " * " 3 1/2 Digit, LCD/LED Display, A/D Converter with Display Hold August 1997 Features Description • HOLD Reading Input Allows Indefinite Display Hold The Harris ICL7116 and ICL7117 are high performance, low


    OCR Scan     		PDF ICL7116 ICL7117 47jiF 100kii 100kii220kii

    5170 PH 51

    Abstract: DD330 VES 470M ml232 ICL 4050 LTPD sm 126 ao 2FJ MARKING
    Text: . M I L- M- 38 51 0/ 23 5C I JUALIF IC A T ION I 25 Mav 1984 I 1 S U P E R S E D ING-M I L- M- 38 51 0/ 23 5B 24 May 1982 REQU IR EM EM T I REMOVED I MILITARY SP ECIFICATION MICROCIRCUIT, DIGITAL, MOS, 4096 BIT RANDOM A C CE SS MEMORY M ONO LI TH IC SILICON


    OCR Scan     		PDF MIL-M-38510/235C MIL-M-38510/235B 705-040/A3437 5170 PH 51 DD330 VES 470M ml232 ICL 4050 LTPD sm 126 ao 2FJ MARKING

    Untitled

    Abstract: No abstract text available
    Text: Thom asiBetts Power DIN Type E MODULAR POWER DIN OVERVIEW C o m m o n E l e c t r ic a l , T h e r m a l a n d M e c h a n ic al S pecificatio ns A pplication C lass: EKD DIN 40040 L ower A mbient T emperature: Upper A mbient T emperature: +125°C Insulation Resistance: > 1 0 ‘ Q


    OCR Scan     		PDF UL94V-0 901-6S2-7766

    ir 623 p

    Abstract: No abstract text available
    Text: ThomasÊBetts IDC Systems Flat Ribbon Cables .025" PITCH FLAT CABLE 136 SERIES 30 AWG SOLID PVC TO LL53375 E41651 P h y s ic a l P r o p e r t ie s Insulation material: Flexible P V C C olor: Blue/Grey C onductors: 3 0 A W G , solid bare copper E l e c t r ic a l P r o p e r t ie s


    OCR Scan     		PDF LL53375 E41651 ir 623 p

    Untitled

    Abstract: No abstract text available
    Text: ThomasëBetts IDC Systems Ribbon Connectors BACKSHELLS FOR METAL SHELL RIBBON CONNECTORS 14-50 POSITIONS LR92984 E60980 P h y s ic a l P r o p e r t ie s I n s u la t io n M a t e r ia l: Glass filled thermoplastic, rated UL 94V-0. E l e c t r ic a l P r o p e r t ie s


    OCR Scan     		PDF LR92984 E60980 779-3500XT 622-014M 62JM24 622-014R 622-Q24R 622-036R 622-050R 622-036M

    600112

    Abstract: No abstract text available
    Text: ThomasêBetts SCSI Fine Pitch PIN CONTACT, FINE PITCH D-SUB DISCRETE WIRE CABLE CONNECTOR '• •'Ì£ki ¿ 'if / .I f TO LR49571 « " i u SSk^ % V» ■ E60980 P h y s ic a l P r o p e r t ie s C o n ta c ts : High strength copper alloy E l e c t r ic a l P r o p e r t ie s


    OCR Scan     		PDF LR49571 E60980 600112