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    IC 6116 RAM Search Results

    IC 6116 RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MHM411-21 Murata Manufacturing Co Ltd Ionizer Module, 100-120VAC-input, Negative Ion Visit Murata Manufacturing Co Ltd
    SCL3400-D01-1 Murata Manufacturing Co Ltd 2-axis (XY) digital inclinometer Visit Murata Manufacturing Co Ltd
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    SCC433T-K03-004 Murata Manufacturing Co Ltd 2-Axis Gyro, 3-axis Accelerometer combination sensor Visit Murata Manufacturing Co Ltd
    MRMS591P Murata Manufacturing Co Ltd Magnetic Sensor Visit Murata Manufacturing Co Ltd

    IC 6116 RAM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    EL6116

    Abstract: 6116 RAM ci 6116 ram 6116 IDT6116 memory 6116 6116 memory 6116 ram 2k chip diagram of ram chip 6116 L6116CMB25
    Text: L 6116 2K x 8 Static RAM Low Power D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ 2K x 8 Static RAM w ith Chip Select Powerdown, Output Enable The L6116 is a high-performance, lowpower CMOS Static RAM. The storage circuitry is organized as 2048


    OCR Scan     		L6116 L6116) L6116-L) L6116 L6116-L MIL-STD-883, IDT6116, CY7C128/CY6116 24-pin EL6116 6116 RAM ci 6116 ram 6116 IDT6116 memory 6116 6116 memory 6116 ram 2k chip diagram of ram chip 6116 L6116CMB25 PDF

    Untitled

    Abstract: No abstract text available
    Text: § 5 -= MHS IlM ll AIATRA-HARRIS SEMICONDUCTOR HM 6116/6116 L 2K x 8 CM OS STATIC RAM C k V rsx Features • MILITARY/INDUSTRIAL : FAST A C C E SS TIME : 120 ns • ASYNCHRONOUS • STAND BY CURRENT : 100 pA max • OPERATING SU PPLY CURRENT : SO mA max • BATTERY BACK UP OPERATION : 2V mln - SO jiA max


    OCR Scan     		6116L 6116/6116L PDF

    6116 RAM

    Abstract: ci 6116 ram 6116 6116 chip diagram of ram chip 6116 6116 static ram Matra-Harris Semiconductor 6116 CMOS RAM RAM type 6116 6116L
    Text: MHS lllll AIATRA-HARRIS SEMICONDUCTOR HM 6116/6116 L 2K x 8 CMOS STATIC RAM MAY 1986 Features • MILITARY/INDUSTRIAL : FAST ACCESS TIME : 120 ns • ASYNCHRONOUS • STAND BY CURRENT : 100 pA max • OPERATING SUPPLY CURRENT : 60 mA max • BATTERY BACK UP OPERATION : 2V mln - SO jiA max


    OCR Scan     		6116/6116L 6116 RAM ci 6116 ram 6116 6116 chip diagram of ram chip 6116 6116 static ram Matra-Harris Semiconductor 6116 CMOS RAM RAM type 6116 6116L PDF

    ES 61162

    Abstract: No abstract text available
    Text: h im HM 6116 DATA SHEET 2 Kx 8 GENERAL PURPOSE CMOS SRAM FEATURES 600 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPPLY EQUAL CYCLE AND ACCESS TIME NO CLOCK AND STROBES REQUIRED GATED INPUTS WIDE TEMPERATURE R ANG E: - 55 TO + 125°C


    OCR Scan     		Sflbfl45b HM6116/Rev ES 61162 PDF

    6116 RAM

    Abstract: SRAM 6116 6116 6116 memory chip diagram of ram chip 6116 6116 memory chip 6116 SRAM HM6116 ram 6116 6ll6
    Text: h im HM 6116 DATA SHEET 2 Kx 8 GENERAL PURPOSE CMOS SRAM FEATURES 600 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPPLY EQUAL CYCLE AND ACCESS TIME NO CLOCK AND STROBES REQUIRED GATED INPUTS WIDE TEMPERATURE R ANG E: - 55 TO + 125°C


    OCR Scan     		6116/Rev 6116 RAM SRAM 6116 6116 6116 memory chip diagram of ram chip 6116 6116 memory chip 6116 SRAM HM6116 ram 6116 6ll6 PDF

    2048x8 RAM

    Abstract: 6216 static ram
    Text: GEC PLESSEY m a 6H 6/6216 Radiation Hard 2048x8 Bit Static RAM S10307FDS Issue 1.5 O ctober 1990 Features • 3pm CMOS-SOS technology • Latch up free • Fast access time 110ns MA6116 and 85ns (MA6216) typical • Total dose 1.5x10s rad (Si) • Transient upset 5x1010 rad (Si) /sec


    OCR Scan     		2048x8 S10307FDS 110ns MA6116) MA6216) 5x10s 5x1010 100pA ma6H6/6216 2048x8 RAM 6216 static ram PDF

    HY6116-10

    Abstract: HY6116 HY6116-12 HY6116-15 Hyundai Semiconductor
    Text: HYUNDAI ELECTRONICS A3 dË| 4675088 HYUNDAI ELEC TR ON IC S MbTSOSÖ 0000003 E 83D 00083 ^ 4 6 -2 3 -1 2 jy rs i» « ' A ti t iR « L S jg g iy FEBRUARY 1986 FEATURES DESCRIPTION The HY6116 is a high speed, low power, 2048-word by 8-bit static CMOS RAM fabricated using highperformance CMOS process technology. This high


    OCR Scan     		t-46-23-12 HY6116 2048-word HY6116-10 HY6116-12 HY6116-15 HY6116 100ns 120ns 150ns HY6116-10 HY6116-12 HY6116-15 Hyundai Semiconductor PDF

    HM6116P-3

    Abstract: HM6116LP HM6116LP-2 HM6116LP-3 hm6116p-4 ic 6116 HM6114FP-4 HM6116LP-3
    Text: Maintenance Only HM6116 Series 2048-word x 8-bit High Speed CMOS Static RAM HM6116P S erie s •FEA TURES • • Single 5V Supply High speed: Fast Access Time • Low Power Standby and Low Power Operation Standby: 100/jW typ. 10/uW (typ.) (L-version) 120ns/150ns/200ns (max.)


    OCR Scan     		HM6116 2048-word 120ns/150ns/200ns HM6116P 100/jW 10/uW 200mW 175mW P-141 HM6116P-2 HM6116P-3 HM6116LP HM6116LP-2 HM6116LP-3 hm6116p-4 ic 6116 HM6114FP-4 HM6116LP-3 PDF

    CY6116-35

    Abstract: 6116 RAM expansion circuit
    Text: CY6116 CYPRESS SEMICONDUCTOR " 2,048 x 8 Static RAV RAM Features Functional Description • Automatic power-down when deselected The C Y 6116 is a high-perform ance CM O S Static RAM organized as 2048 w ords by 8 bits. Easy m em ory expansion is provided by


    OCR Scan     		CY6116 CY6116-35 6116 RAM expansion circuit PDF

    RAM MK6116

    Abstract: MK6116-15 6116 ram 2k MK6116-25 DIP-24 MK6116 FZJ 105
    Text: SGS-THOMSON M K 6116 M MK6116, MKI6116, MK6116L, MKI6116L N/S - 15/20/25 2 K X 8 C M O S STATIC RAM i BYTEWYDE 2K x 8 CM OS STATIC RAM. £.j U i +5 VOLT ONLY WRITE/READ. i 24-PIN 600 MIL PLASTIC DIP, JEDEC PINOUT 28-PIN 330 MIL SOIC. i EQUAL W RITE AND READ CYCLE TIMES.


    OCR Scan     		MK6116 MK6116, MKI6116, MK6116L, MKI6116L 24-PIN 28-PIN MK6116 384-bit 24-pin, RAM MK6116 MK6116-15 6116 ram 2k MK6116-25 DIP-24 FZJ 105 PDF

    SR06

    Abstract: V3089 6116LA25 DSC-3089/06
    Text: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)


    Original     		20/25/35/45/55/70/90/120/150ns 20/25/35/45ns 15/20/25/35/45ns 24-pin MIL-STD-833, IDT6116SA IDT6116LA SR06 V3089 6116LA25 DSC-3089/06 PDF

    6116A

    Abstract: CDM6116
    Text: G E SOLID STATE 17E D • 3ä75Gfil QQES027 =! Hlgh-Reliability CMOS LSI Devices - CDM6116AC/3 High-Reliability CMOS 2048-Word by 8-Bit LSI Static RAM Features: ■ F u lly sta tic op eratio n ■ S ingle p o w e r sup ply: 4.5 to 5.5 V


    OCR Scan     		75Gfil QQES027 CDM6116AC/3 2048-Word 24-load 28-terminalleadless 6116A CDM6116 PDF

    6116 RAM

    Abstract: 6116 static ram chip diagram of ram chip 6116 6116 CMOS RAM STATIC RAM "static ram 2k x 8" 6116 ram 2k 6116 static RAM chip ram 6116 G5116D-2
    Text: G5116 Microcircuits CMOS 2048 x 8 High Speed Static RAM Features General Description • L o w p o w e r C M O S te c h n o lo g y 15 m A S ta n d by 70 m A O p e ra tin g T h e GTE G 5 1 16 is a h ig h -s p e e d 204 8 -w ord by 8 -b it sta tic RAM w ith m a x im u m access tim e s of 90,120 o r 150 nan o se con d s.


    OCR Scan     		G5116 G5116 2048-word G65SC00 G5116P-90 G5116D-90 16P-2 6116 RAM 6116 static ram chip diagram of ram chip 6116 6116 CMOS RAM STATIC RAM "static ram 2k x 8" 6116 ram 2k 6116 static RAM chip ram 6116 G5116D-2 PDF

    ES 61162

    Abstract: CY6117 sp 735L
    Text: CY6116 _ CY6117 SEMICONDUCTOR 2048 x 8 Static R/W RAM Features Functional Description • A u to m atic pow er-dow n w hen deselected T h e C Y 6116 an d C Y 6117 are high-perform ance C M O S Static R A M s organized as 2048 w ords by 8 bits. Easy m em ory expan­


    OCR Scan     		CY6116 CY6117 add7-45LM 6117-55LM 38-00055-C ES 61162 sp 735L PDF

    STATIC RAM 8464

    Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
    Text: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)


    OCR Scan     		L7C167 L7C168 L7C170 L7C171 L7C172 L6116/ L6116L L7C183 CY7C183 L7C184 STATIC RAM 8464 IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram PDF

    6116LA45

    Abstract: 6116LA120 chip diagram of ram chip 6116 6116LA25 6116 static RAM chip IDT6116SA/LA 6116 static RAM 150ns 6116 memory DIP-24 IDT6116LA
    Text: CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT6116SA IDT6116LA Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)


    Original     		IDT6116SA IDT6116LA 20/25/35/45/55/70/90/120/150ns 20/25/35/45ns 15/20/25/35/45ns 24-pin MIL-STD-833, 6116LA45 6116LA120 chip diagram of ram chip 6116 6116LA25 6116 static RAM chip IDT6116SA/LA 6116 static RAM 150ns 6116 memory DIP-24 IDT6116LA PDF

    6116LA45

    Abstract: IDT6116LA IDT6116SA SO24-2
    Text: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)


    Original     		IDT6116SA IDT6116LA 20/25/35/45/55/70/90/120/150ns 20/25/35/45ns 15/20/25/35/45ns 24-pin MIL-STD-833, 6116LA45 IDT6116LA IDT6116SA SO24-2 PDF

    6116 CMOS RAM

    Abstract: 6116LA45 IDT6116SA/LA IDT6116LA IDT6116SA SO24-2 IDT 6116 memory chip
    Text: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)


    Original     		IDT6116SA IDT6116LA 20/25/35/45/55/70/90/120/150ns 20/25/35/45ns 15/20/25/35/45ns 24-pin MIL-STD-833, 6116 CMOS RAM 6116LA45 IDT6116SA/LA IDT6116LA IDT6116SA SO24-2 IDT 6116 memory chip PDF

    Untitled

    Abstract: No abstract text available
    Text: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)


    Original     		IDT6116SA IDT6116LA 20/25/35/45/55/70/90/120/150ns 20/25/35/45ns 15/20/25/35/45ns 24-pin MIL-STD-833, PDF

    6116 CMOS RAM

    Abstract: 6116LA45 6116 ram 2k
    Text: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)


    Original     		IDT6116SA IDT6116LA 20/25/35/45/55/70/90/120/150ns 20/25/35/45ns 15/20/25/35/45ns 24-pin MIL-STD-833, 6116 CMOS RAM 6116LA45 6116 ram 2k PDF

    6116LA55

    Abstract: No abstract text available
    Text: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)


    Original     		IDT6116SA IDT6116LA 20/25/35/45/55/70/90/120/150ns 20/25/35/45ns 15/20/25/35/45ns 24-pin MIL-STD-833, 6116LA55 PDF

    6116LA45

    Abstract: IDT6116LA IDT6116SA SO24-2
    Text: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)


    Original     		IDT6116SA IDT6116LA 20/25/35/45/55/70/90/120/150ns 20/25/35/45ns 15/20/25/35/45ns 24-pin MIL-STD-833, 6116LA45 IDT6116LA IDT6116SA SO24-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS Static RAM 16K 2K x 8-Bit IDT6116SA IDT6116LA Features Description ◆ The IDT6116SA/LA is a 16,384-bit high-speed static RAM organized as 2K x 8. It is fabricated using IDT's high-performance, high-reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a


    Original     		IDT6116SA IDT6116LA IDT6116SA/LA 384-bit SR-0602-02. 24-pin PDF

    Digital IC tester

    Abstract: MC140 Datasheet IC 244, 245, 373, 374 ic 8255 z80 8255 MC140 LIST OF 74 IC SERIES 8253/8254 IC 2816 IC 8155
    Text: IC Testers VPL-DICT Digital IC Tester VPL-DICT is aHand-Held version, designed as a powerful tool for manufacturers, servicing engineers, R&D personnels to test a wide range of Digital IC's. FEATURES l Tests most of the 6 to 40 pin ICs in DIP package. The list


    Original     		8088/8085/Z80/6502) MC140) MC140 MC145 Delhi-110092. Digital IC tester MC140 Datasheet IC 244, 245, 373, 374 ic 8255 z80 8255 MC140 LIST OF 74 IC SERIES 8253/8254 IC 2816 IC 8155 PDF