D 1398 Transistor
Abstract: BFG32 BFG96 DD311
Text: Phillp^em iconductore _ bbS3131 ÜD3114b 712 Product specification M A P X Ê PNP 5 GHz wideband transistor BFG32 PINNING DESCRIPTION PNP transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for application in wideband amplifiers, such as MATV
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G03114b
BFG32
OT103
BFG96.
OT103.
D 1398 Transistor
BFG32
BFG96
DD311
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955 539 ic
Abstract: No abstract text available
Text: BZW04P-5V8 THRU BZW04-376 Tran sZ o rb TRANSIENT VOLTAGE SUPPRESSOR Stand-off Voltage - 5.8 to 376 Volts Peak Pulse Power - 400 Watts _ FEATURES_ D 0204A L 0 .10 7 ¿ 7i 0 080 (2.0 5L t 0.205 i5 2 0.160 (4 J t ♦ Plastic package has Underwriters Laboratory
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BZW04P-5V8
BZW04-376
10/1000us
BZW04P5V8
955 539 ic
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Untitled
Abstract: No abstract text available
Text: a G eneral ^ S e m ic o n d u c to r BZW04P-5V8 thru BZW04-376 T ra n s Z o rb Transient Voltage Suppressors Peak Pulse Power 400W Stand-off Voltage 5.8 to 376V 1.0 25.4 MIN. 0.107(2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) Mechanical Data Case: JEDEC D0-204AL molded plastic body over passi
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BZW04P-5V8
BZW04-376
DO-204AL
DO-41
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MRF571
Abstract: MMBR571LT1 MRF5711LT1 NF50 11608a J500
Text: MOTOROLA Order this document by MMBR571LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR571LT1 MRF571 MRF5711LT1 NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic packages. This
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MMBR571LT1/D
MMBR571LT1
MRF571
MRF5711LT1
MRF5711LT1,
MRF571)
A/500
MMBR571LT1)
MRF5711LT1)
MMBR571LT1
MRF571
MRF5711LT1
NF50
11608a
J500
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MBC13900/D Rev. 1, 05/2005 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information Device MBC13900T11 MBC13900NT1 1
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MBC13900/D
MBC13900
MBC13900T11
MBC13900NT1
OT-343)
OT-343
OT-343
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MMBR571LT1
Abstract: 2S110
Text: MOTOROLA Order this document by MMBR571LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors MMBR571LT1 MRF5711LT1 Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic packages. This
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MMBR571LT1/D
MRF5711LT1,
MRF571)
A/500
MMBR571LT1)
MRF5711LT1)
MMBR571LT1
MRF5711LT1
2S110
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MRF5711LT1
Abstract: MMBR571LT1 MRF571 11608A ZO 103 MA 75 603
Text: MOTOROLA Order this document by MMBR571LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors MMBR571LT1 MRF5711LT1 Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic packages. This
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MMBR571LT1/D
MMBR571LT1
MRF5711LT1
MRF5711LT1,
MRF571)
A/500
MMBR571LT1)
MRF5711LT1)
MMBR571LT1
MRF5711LT1
MRF571
11608A
ZO 103 MA 75 603
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MBC13900/D Rev. 1.1, 06/2005 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information 1 1 Introduction The MBC13900 is a high performance transistor
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MBC13900/D
MBC13900
OT-343)
MBC13900
SC-70
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ltsq
Abstract: P6KE6.8 THRU P6KE440CA P6KE200 602 P6KE15 equivalent
Text: P6KE6.8 thru P6KE440CA - / X G en era l ^ S e m ic o n d u c to r _ TRANsZoRB Transient Voltage Suppressors Peak Pulse Power 600W Breakdown Voltage 6.8 to 440V Features_ D0-204AC DO-15 • Plastic package has Underwriters Laboratory
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P6KE440CA
D0-204AC
DO-15)
ltsq
P6KE6.8 THRU P6KE440CA
P6KE200 602
P6KE15 equivalent
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4066 spice model
Abstract: marking r4 SOT343 RF LNA" 1 to 2 GHz" spice
Text: Freescale Semiconductor Technical Data MBC13900/D Rev. 0, 6/2002 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information 1 Introduction The MBC13900 is a high performance transistor
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MBC13900/D
MBC13900
MBC13900T1
OT-343)
OT-343
MBC13900
SC-70
318M-01,
4066 spice model
marking r4 SOT343
RF LNA" 1 to 2 GHz" spice
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LL1608-FH
Abstract: MBC13900 MBC13900NT1 MBC13900T1 Functional details of ic 4066 K 2545
Text: Freescale Semiconductor Technical Data Document Number: MBC13900/D Rev. 1.1, 06/2005 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information Device MBC13900T11 MBC13900NT1
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MBC13900/D
MBC13900
OT-343)
MBC13900T11
MBC13900NT1
MBC13900
SC-70
LL1608-FH
MBC13900NT1
MBC13900T1
Functional details of ic 4066
K 2545
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0338 transistor
Abstract: marking r4 SOT343
Text: Freescale Semiconductor Technical Data Document Number: MBC13900/D Rev. 1.1, 06/2005 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information Device MBC13900T11 MBC13900NT1
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MBC13900/D
MBC13900
MBC13900T11
MBC13900NT1
OT-343)
OT-343
OT-343
0338 transistor
marking r4 SOT343
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D0204AL
Abstract: No abstract text available
Text: <=Q^G e n e r a l P4KE6.8 thru P4KE440CA S e m ic o n d u c t o r T ra n s Z o rb Transient Voltage Suppressors Peak Pulse Power 400W Breakdown Voltage 6.8 to 440V • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Glass passivated ¡unction
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P4KE440CA
DQ-204AL
DO-41
D0204AL
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1-5KE38
Abstract: diode BFT 99 TVS Diode 1.5KE220CA diode 1n6285A SKE47 E108274 5ke440ca
Text: 1.5KE6.8 THRU 1.5KE440CA GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR Breakdown Voltage -6.8 to 440 Volts Peak Pulse Power - 1500 Watts FEATURES Case Style 1.5KE ♦ Plastic package h as Underwriters Laboratory Flammability Classification 94V-0 ♦ G lass passivated junction
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5KE440CA
1-5KE38
diode BFT 99
TVS Diode 1.5KE220CA
diode 1n6285A
SKE47
E108274
5ke440ca
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sot-23 marking 113
Abstract: sot-23 MARKING GU MMBR571L MRF5711LT1 SF-11N MMBR571LT1 MRF571 11608a
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MMBR571LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR571LT1 MRF5711LT1 Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic packages. This
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MMBR571LT1/D
MMBR571LT1
MRF5711LT1
MRF5711LT1,
MRF571)
A/500
MMBR571LT1)
MRF5711LT1)
MMBR571LT1
sot-23 marking 113
sot-23 MARKING GU
MMBR571L
MRF5711LT1
SF-11N
MRF571
11608a
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBR571LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR571LT1 MPS571 MRF571 MRF5711LT1 NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package, as well as
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MMBR571LT1/D
MMBR571LT1
MPS571
MRF571
MRF5711LT1
226AA
MRF5711LT1,
MRF571)
A/500
MMBR571LT1)
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Untitled
Abstract: No abstract text available
Text: I b^E ]> • bbSBSBl 0027524 2T0 I BC327 BC327A BC328 APX N AMER PHILIPS/DISCRETE _ y SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in plastic TO-92 envelopes, primarily intended fo r use in driver and output stages of audio amplifiers.
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BC327
BC327A
BC328
BC327,
BC327A,
BC328
BC337,
BC337A
BC338
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diode 1N 6267A
Abstract: E22 CA 1.5K diode 1,5k e12a w 1.5k e36 6275A diode 6301A e24a diode E6.8A E13A 1N SERIES DIODE
Text: v G eneral S e m ic o n d u c t o r 1.5KE6.8 thru 1.5KE440CA and 1N6267 thru 1N6303A T ra n s Z o rb * Transient Voltage Suppressors Peak Pulse Power 1500W Breakdown Voltage 6.8 to 440V Features Case Style 1.5KE • Plastic package has Underwriters Laboratory
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5KE440CA
1N6267
1N6303A
10/1000ns
diode 1N 6267A
E22 CA 1.5K
diode 1,5k e12a
w 1.5k e36
6275A diode
6301A
e24a
diode E6.8A
E13A
1N SERIES DIODE
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318M
Abstract: LL1608-FH MBC13900 MBC13900T1 marking r4 SOT343 SOT343 lna
Text: Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package MBC13900T1 900 SOT-343 The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ
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MBC13900/D
MBC13900
OT-343)
MBC13900T1
OT-343
MBC13900
SC-70
318M
LL1608-FH
MBC13900T1
marking r4 SOT343
SOT343 lna
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4066 spice model
Abstract: LL1608-FH MBC13900 MBC13900T1
Text: Freescale Semiconductor, Inc. Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package
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MBC13900/D
MBC13900
OT-343)
MBC13900T1
OT-343
MBC13900
SC-70
4066 spice model
LL1608-FH
MBC13900T1
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955 539 ic
Abstract: No abstract text available
Text: FAGOR ^ BZW04-5V8.BZW04-256 BZW04-6V4B. BZW04-256B Unidirectional and Bidirectional Transient Voltage Suppressor Diodes Dimensions in mm. DO-15 Plastic Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350 °C.
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DO-15
BZW04-5V8.
BZW04-256
BZW04-6V4B.
BZW04-256B
BZW04
BZW04B
955 539 ic
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E200A
Abstract: E150A
Text: Z4KE100 thru Z4KE200A Glass Passivated Zeners Zener Voltage 100 to 200V Steady State Power 1.5W DO-2Q4AL DO-41 Features_ • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Low Zener impedance • Low regulation factor
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Z4KE100
Z4KE200A
DO-41)
D0-204AL
E200A
E150A
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SBS830T
Abstract: SBS860T SBS840T SBS835T
Text: 3890137 GENL INSTR, POWER S ? D E 1 38=10137 0002223 a T -0 3 - r ? VOLTAGE RANGE 20 to 60 Volts CURRENT 8.0 Amperes »mi .115 4.691 .17$ (4 4$ , .137(3.4«) ' .11» H » l .105 (a 67) FEATURES • Plastic package has Underwriters Laboratory Flamm ability C lassification 94V-0
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BC327
Abstract: BC327-16 BC327-25 BC327A BC328 BC328-16 BC337 BC337A BC338 bC328 philips
Text: h ^E J> m 1^53^31 GG27S24 2T0 N AMER PHILIPS/DISCRE TE IAPX B C 327 BC327A B C 328 I SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in plastic TO-92 envelopes, prim arily intended fo r use in driver and ou tput stages o f audio amplifiers. The BC327, BC327A, BC328 are complementary to the BC337, BC337A and BC338 respectively.
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GG27S24
BC327
BC327A
BC328
BC327,
BC327A,
BC328
BC337,
BC337A
BC338
BC327
BC327-16
BC327-25
BC327A
BC328-16
BC337
bC328 philips
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