9926C
Abstract: IPI037N06L3 s4si IPP037N06L3 G
Text: IPB034N06L3 G Jf]R IPI037N06L3 G IPP037N06L3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R - @? > 2 I - ' R AE:> :K65 E649? @= @8J 7@C 4@? G6CE6CD I9 . K +&, Z" 1(
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IPB034N06L3
IPI037N06L3
IPP037N06L3
76BF6?
766substances.
9926C
s4si
IPP037N06L3 G
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b12 7d diode
Abstract: No abstract text available
Text: IPB034N06N3 G Id\Q "%&$!"# 3 Power-Transistor Product Summary Features P 6? ABH>3 A53 C96931C9? > =? C? A 4A9E5B1>4 43 43 , & , P G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C & V 9H .( J R 9H"[Z#$YMc +&, Y" I9 )( 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z#
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IPB034N06N3
b12 7d diode
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motorola 100 w amplifier
Abstract: PA9OO-I9-1OOUD
Text: Order this data sheet MOTOROLA by PA9OO-I9-1OOUD SEMICONDUCTOR TECHNICAL DATA I Advance information PA900-I 9-1 OOL The RF Line Linear Power Amplifier Designed for cellular radio base stations in the 850 to 900 MHz frequency range. This microstrip circuit technology
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PA900-I
PA900-19-I
motorola 100 w amplifier
PA9OO-I9-1OOUD
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IPB029N06N3G
Abstract: No abstract text available
Text: IPB029N06N3 G Ie\Q IPI032N06N3 G IPP032N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R , ? >=1H , & Q @D9=9J54 D53 8>? <? 7I 6? B 3 ? >F5BD5BC I9 .( J *&1 Y" *(
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IPB029N06N3
IPI032N06N3
IPP032N06N3
IPB029N06N3G
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BSZ520N15NS3
Abstract: marking 6B s4si 6B104 I6025 marking a6b
Text: Je]R BSZ520N15NS3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q AD:> :J65 7@B 54 54 4@? F6BC:@? Q 492 ? ? 6= ? @B> 2 = 6F6= V 9I )-( K R 9I"\[#$ZNd -* Z" I9 *) 6 Q H46= = 6? D82 D6 492 B86 HR 9I"\[# AB@5E4D ) ' Q& @G @? B6C:CD2 ? 46 R 9I"\[#
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BSZ520N15NS3
marking 6B
s4si
6B104
I6025
marking a6b
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d5cd
Abstract: IPI024N06N3 G
Text: IPB021N06N3 G Ie\Q IPI024N06N3 G IPP024N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R , ? >=1H, & Q @D9=9J54 D53 8>? <? 7I 6? B 3 ? >F5BD5BC I9 .( J *& Y" )*( 6
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IPB021N06N3
IPI024N06N3
IPP024N06N3
d5cd
IPI024N06N3 G
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da5 diode
Abstract: BC519 IPB048N06L IPP048N06L DA QG marking 1bc
Text: IPP048N06L G IPB048N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< E5AB9 ?> I9 .( J ,&, Y" ( 6 P S ? @5A1C
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IPP048N06L
IPB048N06L
da5 diode
BC519
DA QG
marking 1bc
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55B5
Abstract: IPB036N12N marking eb5 Diode 9H diode 1D marking G9
Text: IPB036N12N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 3 ? >F5BD5BC Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H *( J R 9H"[Z#$YMd +&. Y" I9 )0( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 + 9H"[Z#
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IPB036N12N3
65AE5
55B5
IPB036N12N
marking eb5
Diode 9H
diode 1D
marking G9
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marking EB diode
Abstract: Q451 ee 19 8b qg
Text: IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q ' 3 81>>5< >? B=1<<5F5< R , ? >=1H, & Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & I9 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# 0( J -&,
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IPP057N08N3
IPI057N08N3
IPB054N08N3
marking EB diode
Q451
ee 19 8b qg
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IPA105N15N3
Abstract: IPA105N15N 81a diode
Text: IPA105N15N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C & V 9H -( J R , ? >=1G )(&- Y" +/ I9 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z# P S ? @5A1C9>7 C5=@5A1CDA5
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IPA105N15N3
IPA105N15N
81a diode
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IPD320N20N3
Abstract: marking EB5
Text: IPD320N20N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H *( J R 9H"[Z#$YMd +* Y" I9 +, 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D EB5
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IPD320N20N3
7865AE5
marking EB5
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IPB025
Abstract: IPB025N08N3 G
Text: IPB025N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H 0 J Q ' 3 81>>5< >? B=1<<5F5< R 9H"[Z#$YMd *&- Y" Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & I9 *( 6 @B5F9? EC 5>79>55B9 >7 C1=@<5 3 ? 45 ?E7(*8C(0C Q. 5BI <? G ? > B5C9CD
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IPB025N08N3
IPB025
IPB025N08N3 G
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B1C DIODE
Abstract: IPB039N10N3 marking 1c marking a5 4r diode
Text: IPB039N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C & V 9H ( J R 9H"[Z#$YMc +&1 Y" I9 ).( 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH
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IPB039N10N3
B1C DIODE
marking 1c
marking a5 4r diode
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DA5 diode
Abstract: No abstract text available
Text: IPB110N06L G IPP110N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< E5AB9 ?> I9 .( J Y" /0 6 P S ? @5A1C
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IPB110N06L
IPP110N06L
DA5 diode
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Untitled
Abstract: No abstract text available
Text: IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q ' 3 81>>5< >? B=1<<5F5< R , ? >=1H- Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & I9 ( J ,&* Y" )( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z#
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IPB042N10N3
IPI045N10N3
IPP045N10N3
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4b 5c marking
Abstract: PG-TO-263-7
Text: IPB030N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 Q @D9=9J54 D53 8>? <? 7I 6? B=? D? B4B9F5 1@@<931D9 ? >C V 9H 0( J R 9H"[Z#$YMd +&( Y" I9 .( 6 Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &
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IPB030N08N3
4b 5c marking
PG-TO-263-7
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marking EB5
Abstract: 5CC1
Text: BSC320N20NS3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H *( J R 9H"[Z#$YMd +* Y" I9 +. 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q 2 6B55 <514 @<1D9 >7 + ? " , 3 ? =@<9
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BSC320N20NS3
7865AE5
marking EB5
5CC1
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BC519
Abstract: 81a diode
Text: IPB070N06N G IPP070N06N G IPI070N06N G "%&$!"# Power-Transistor Product Summary Features V 9H P & ? F 71C 5 3 81A75 6? A61BCBF9C 3 89 >7 1@@<9 3 1C 9? >B R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C >? A=1<<5E5< E5AB9 ?> I9 .( J .&/ Y" 0( 6 P S ? @5A1C
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IPB070N06N
IPP070N06N
IPI070N06N
BC519
81a diode
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Diode Marking C.3
Abstract: da5 diode DA5 marking 5411C
Text: IPB070N06L G IPP070N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< E5AB9 ?> I9 .( J .&/ Y" 0( 6 P S ? @5A1C
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IPB070N06L
IPP070N06L
Diode Marking C.3
da5 diode
DA5 marking
5411C
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65A3
Abstract: 5E DIODE marking c-9
Text: IPB037N06N3 G Id\Q IPI040N06N3 G IPP040N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H P 6? ABH>3 A53 C96931C9? > 4A9E5B1>4 43 43 ,& , R , ? >=1G, & P G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C & I9 P ' 3 81>>5< >? A=1<<5E5<
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IPB037N06N3
IPI040N06N3
IPP040N06N3
65A3
5E DIODE
marking c-9
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BA10324A
Abstract: ba10324af BA10324AFV ba1032
Text: Quad ground sense operational amplifiers BA10324A BA10324AF BA10324AFV BA10324A, BA10324AF, and BA10324AFV are monolithic ICs incorporating four phase-compensated operational amplifiers. Dimensions U n its : mm BA10324A (DIP14) I9 .4 ± 0 .3 Features •
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BA10324A
BA10324AF
BA10324AFV
BA10324A,
BA10324AF,
BA10324AFV
DIP14,
SSOP-B14
BA10324A
DIP14)
ba1032
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NDP405B
Abstract: NDP405A NDP406A
Text: a t i o n a Semiconductor l o c to b e r i9 9 i NDP405A/NDP405B, NDP406A/NDP406B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's proprietary, high
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NDP405A/NDP405B,
NDP406A/NDP406B
NDP405B
NDP405A
NDP406A
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Philips MAB8021
Abstract: MAB8021 8048 microcontroller processor 8048 TI 8048 CPU 8048 BASED 8048 pin details signetics N28 block diagram of 8048 microcontroller SCN8048
Text: NAPC/ SI6NETICS Signetics aiE D • bfci53T54 0Q5S33Ô ñ SCN8400 Series 17 W % i9 - ô S Single-Chip 8-Bit Microcontroller c Product Specification Microprocessor Products FEATURES • l2C serial I/O that can be used in single or multimaster systems serial I/O data and clock via
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SCN8400
SCN84XX
20-pin
SCN8422
SCN8442,
SCN8048.
-C2-27pF
100/iH
56/aH
33fiH
Philips MAB8021
MAB8021
8048 microcontroller
processor 8048
TI 8048 CPU
8048 BASED
8048 pin details
signetics N28
block diagram of 8048 microcontroller
SCN8048
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P200A
Abstract: IC 4543
Text: TL16PNP200A STANDALONE PLUG-AND-PLAY PnP CONTROLLER S LLS 274A -A P R IL I9 9 7 -R E V IS ED MAY 1997 PnP Card Autoconfiguration Sequence Compliant Satisfies All Requirements for Qualifying for the Windows 95 Logo Supports up to Five Logical Devices Simple 3-Terminal Interface to Serial
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TL16PNP200A
24-Bit
16-Bit
ST93C56/66
P200A
IC 4543
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