008MP
Abstract: No abstract text available
Text: R E V I S I O N S THIS DRAMIN6 IS THE PROPERTY OF NATIONAL SEMICONDUCTOR CORPORATION. NO USE THEREOF SHALL BE MAOE OTWEF. THAN AS A REFERENCE FOR PROPOSALS AS SUBMITTED TO NATIONAL SEMICONDUCTOR CORPORATION FOR JOBS TO BE EXECUTED IN CONFOfKXTY WITH SUCH PROPOSALS UNLESS THE CONSENT OF SAIO NATIONAL SEMICONDUCTOR CORP
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I65MAX/is:
I80MAX
MIL-M-38510
008MP
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L5002
Abstract: No abstract text available
Text: EL2160C é la n te c e u iô o c 180MHz Current Feedback Amplifier h!ghpERfORSMSŒANALositiTEGRÂTEQctRcutTs Features General Description 130M H z 3dB bandw idth Av =+2 180M H z 3dB bandw idth (Av =+1) 0.01% differential gain, RL=500£2 0.01° differential phase, R L=500£2
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EL2160C
180MHz
2160C
use13
5e-15
le-30
L5002
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FLM0910-8C
Abstract: i80m
Text: FLM0910-8C Fuffrsu Internally M a tc h e d P o w e r G a A s F E T s FEATURES • • • • • High Output Power: P-idg = 38.5dBm Typ. High Gain: G-j^B = 6.0dB (Typ.) High PAE: riadd = 24% (Typ.) Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Q
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FLM0910-8C
FLM0910-8C
i80m
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FEI Microwave
Abstract: No abstract text available
Text: FLM7785-SC Internally Matched Power iaAs FEI's ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage vds 15 V Gate-Source Voltage vgs -5 V 42.8 w Total Power Dissipation Tc Pt = 25°C Storage Temperature
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FLM7785-SC
Volta50
34dBm
32dBm
30dBm
FEI Microwave
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EHP14
Abstract: No abstract text available
Text: NJG1304E G a A s POWER A M P L I F I E R 1C • GENERAL DESCRIPTION NJG1304E is a GaAs MM IC designed mainly for driver ■ PACKAGE OUTLINE amplifier of PHS base station in Japan. This is a variable gain type with 20dB dynamic range. It features very low distortion and P « = d is
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NJG1304E
NJG1304E
-70dBc
17dBm
17dBm)
180mA
EHP14
300kH
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FLM8596-8C
Abstract: No abstract text available
Text: FLM8596-8C Internally Matched Power GaAs l E I s ABSOLUTE MAXIMUM RATING Am bient Tem perature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage vds 15 V Gate-Source Voltage VGS -5 V 42.8 w °c °c Total Power Dissipation Tc = 25°C Pt Storage Temperature
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FLM8596-8C
FLM8596-8C
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Untitled
Abstract: No abstract text available
Text: F LM 7177-81 Internally Matched Power ìaAs I E ! s ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) -Condition item Symbol Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 42.8 w Total Power Dissipation Tc = 25°C Pt Storage Temperature
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2200mA
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i80m
Abstract: FLM7785-8C
Text: F |rUJI,çPI ,U. FLM7785-8C j Internally M a tc h e d P o w e r G a A s F E T s FEATURES • • • • • • High Output Power: P-idg = 39dBm Typ. High Gain: G -j^B = 6.0dB (Typ.) High PAE: r iadd = 27% (Typ.) Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Q
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FLM7785-8C
39dBm
FLM7785-8C
i80m
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FLM7177-8D
Abstract: i80m
Text: FLM7177-8D FimTÇII rU JI Ij U Internally M a tc h e d P o w e r G aA s F E T s FEATURES • • • • • • • High Output Power: P-idg = 39dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 7.1 ~ 7.7GHz
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FLM7177-8D
39dBm
-45dBc
28dBm
FLM7177-8D
7177-8D
i80m
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GaAs FETs
Abstract: FLM4450-8E
Text: F| .fjW-,. J FLM4450-8E Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 39dBm Typ. High Gain: G -j^B = 10.0dB (Typ.) High PAE: riadd = 32% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q
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FLM4450-8E
39dBm
-45dBc
28dBm
4450-8E
GaAs FETs
FLM4450-8E
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FLM3742-8E
Abstract: No abstract text available
Text: pi itrrci I FLM3742-8E Internally M a tc h e d P o w e r G aA s F E T s *" ^ FEATURES • • • • • • High Output Power: P-idg = 39dBm Typ. High Gain: G -^ g = 11dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 3.7 ~ 4.2GHz
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FLM3742-8E
39dBm
-45dBc
28dBm
FLM3742-8E
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Untitled
Abstract: No abstract text available
Text: F L M 6472-HD Internally Matched Power GaAs ¡ E l s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 42.8 w °c °c Total Power Dissipation Pt Tc = 25°C Storage Temperature
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6472-HD
2200mA
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NJG1302
Abstract: NJG1302V SSOP14 radio ic
Text: NJG1302 TRANSMITTING GaAs POWER AMPLIFIER IC • GENERAL DESCRIPTION NJG1302 is a GaAs MMIC designed mainly for final stage power amplifier of PHS in Japan. This is a variable gain type with 20dB dynamic range. It has input and output matching circuits internally
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NJG1302
NJG1302
32dBTyp.
-60dBc
NJG1302V
SSOP14
radio ic
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Untitled
Abstract: No abstract text available
Text: C O IL S RC TYPE Series TEST INSTRUMENTS: L : HP 4342A Q Meter IDC : HP 4261A Digital LCR Meter PRODUCT IDENTIFICATION RC 05 13 A -100 M- D2 Material Tolerance M:±20% Inductance IO^xH T:Tube pack $T:Tappmg pack B Dim. A Dim. CHOKECOILS RCTYPE DIMENSIONS
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05I3T
05I9T
062IT
RC0628T
RS05I9ST
062IST
RC0628ST
1A-390M
-470M
RC0628A-5R6M-D2
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FLM1011-8D
Abstract: No abstract text available
Text: FLM1011-8D F im T Ç II r U J I 1j U Internally M a tc h e d P o w e r G a A s F E T s FEATURES • High Output Power: P-idg = 38.5dBm Typ. • High Gain: G-j^B = 5.0dB (Typ.) • High PAE: r iadd = 22% (Typ.) • Low IM 3 = -45dBc@Po = 28dBm • Broad Band: 10.7 ~ 11.7GHz
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FLM1011-8D
-45dBc
28dBm
FLM1011-8D
Ch900
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PI054-33OL
Abstract: CH102 pi0105 P1043 PI043-4R7M PI073-120M O73-680K PIO75-331K CH-102
Text: m • pio P I O S E R I E S POWER INDUCTOR • FEATURES V a r i o u s h i g h power s u r f a c e m o u n t a b le ty p e in d u c to rs are s u p e rio r to h ig h s a t u r a t i o n . • APPLICATION P o rta b le co m m u n ica tio n Notebook Com puter
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820uH
HP-4263B/CH-102
CH-301A
HP-4263B
PI01o5-33oL
PI01o5-39oL
PI01o5-4/oL
PI054-33OL
CH102
pi0105
P1043
PI043-4R7M
PI073-120M
O73-680K
PIO75-331K
CH-102
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LQN21
Abstract: Feme CST A PFBF455JR CSB250D feme cst a 100 21 FEME CST A 200 DFC2R CFBF455 sfeca CDAC10.7
Text: •MINIMUM QUANTITY GUIDE Quantity pc& {mm} Products Name T 0.5 0.5 10,000 50,000 1,000” TZVX2 2,000 10,000 500 0.8 4,000 10,000 1,000’> TZV02 2,000 8,000 500 0.7 4,000 10,000 1,000" TZC03 1,000 4,000 500 1.25 1.0 4,000 10,000 1,000 TZBX4 500 2,500 1.25
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I80mm
GRM36
GRM39
GRM40
GRM42-6
GRM42-2
GRM43-2
GRM44-1
GRM430
GHM1030
LQN21
Feme CST A
PFBF455JR
CSB250D
feme cst a 100 21
FEME CST A 200
DFC2R
CFBF455
sfeca
CDAC10.7
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