AMHS
Abstract: I300I J300
Text: Planning for the 300mm Transition Daniel Seligson, Technology and Manufacturing Engineering TME , Intel Corp. Index words: 300mm, manufacturing, cost, automation, standards, consortium Abstract Introduction Beginning in 1993 a small group of people at Intel began
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300mm
300mm,
200mm
300mm.
300mm
AMHS
I300I
J300
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I300I
Abstract: J300
Text: 300 mm Wafer Manufacturing Technology: More is Less in Semiconductor Production In the world of semiconductor manufacturing, there exists a constant demand for faster, more powerful integrated circuits at lower prices. Manufacturers who achieve this feat have the
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Semiconductor300
Semiconductor300
D-81609
I300I
J300
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cash box guard with procedure minor project
Abstract: cash box guard project with procedure hydrofluoric acid computer motherboard Refurbishing reverse osmosis chiquita stress among student york chillers I300I roundup eco
Text: Commitment Around the Globe Designing for the Future Environmental, Health and Safety Performance Report Printed April 1999 www.intel.com Designing for the Future Table of Contents This year’s report is printed on recycled and recyclable paper. Each year we test new technologies in sustainable paper
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0499/30K/DS/KG/LS/MP
CH10-22
cash box guard with procedure minor project
cash box guard project with procedure
hydrofluoric acid
computer motherboard Refurbishing
reverse osmosis
chiquita
stress among student
york chillers
I300I
roundup eco
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Untitled
Abstract: No abstract text available
Text: 3P AC INLET RECEPTACLE ORDERING CODE: A C -0 1 6 AC — 01 6 - □ - L Z 3 - TERMINAL TYPE 1.7 • — | — DIM. 'A* i i = El j \ 7 DlA ' 1 .6 6 —•H h— 3 .2 1 — r A l %a D lA IE : f r PANEL CUT OUT DIM. (THICKNESS SEE TABLE ~
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-017-Q
I300I
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GE h11l1
Abstract: H11L1
Text: H11L1,L3 GaA4As IRED & PHOTO-IC T E N T A TIVE DATA DEGITAL LOGIC ISOLATION. ISOLATED LIME RECEIVER. COMPUTER-PERIPHERAL INTERFACE. MICROPROCESSOR SYSTEM INTERFACE. The T O S H I B A H11L1, H11L3 is a photoco u p l e r w h ich c o m b i n e s a GaAs IRED as the emitter and an inte
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H11L1
H11L1,
H11L3
2500Vrms
GE h11l1
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6k16e
Abstract: TEA II04 256KX16 AS4LC256K16E0 AS4LC256K16E0-35JC
Text: Preliminary information •■ A S4LC256K16E0 1 3.3V 2 5 6 K X 16 C M O S DRAM EDO Features • 5 1 2 re fre s h c y c le s, 8 m s re fre s h in te rv a l - R A S -only o r C A S-before-RA S re fre s h o r se lf re fre s h • R e a d -m o d ify -w rite
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AS4LC256K16E0
256KX16
AS4LC256K16E0-35)
40-pin
40/44-pin
AS4LC256K16E0-35JC
AS4LC256K16E0-45JC
AS4LC256K16E0-60JC
6k16e
TEA II04
AS4LC256K16E0
AS4LC256K16E0-35JC
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Untitled
Abstract: No abstract text available
Text: Preliminary information •■ AS4LC256K16E0 II 3.3V 256KX16 CMOS DRAM EDO Features • O rganization: 2 6 2 ,1 4 4 w o rd s x 16 bits • H igh speed - 3 5 / 4 5 / 6 0 ns RAS access tim e - 1 7 / 2 0 /2 5 ns c o lu m n address access tim e - 7 / 1 0 / 1 0 ns CAS access tim e
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AS4LC256K16E0
256KX16
AS4LC256K16E0-35)
40-pin
AS4LC256K16E0-35JC
AS4LC256K16E0-45JC
AS4LC256K16E0-60JC
AS4LC256K16E0-35TC
AS4LC256K16E0-45TC
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