55257
Abstract: TC55257AFL-10L apl101 TC55257APL
Text: TOSHIBA MOS MEMORY PRODUCTS TC55257APL-85L/APL-10L/APL-12L TC55257AFL-85L/AFL-1OL/AFL-12L DESCRIPTION The TC55257APL is 262,144 bit static random access memory organized as 32,768 words by 8 bits using CMOS technology, and operated from a single 5V supply. Advanced
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TC55257APL-85L/APL-10L/APL-12L
TC55257AFL-85L/AFL-1OL/AFL-12L
TC55257APL
TC55257APL-85L/APL-1OL/APL-12L
TC55257AFL-85L/AFL-I
OiyAFL-12L
6D28A-P)
F28GA-P)
55257
TC55257AFL-10L
apl101
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Untitled
Abstract: No abstract text available
Text: I Comlinear Corporation ? Low-gain Op Amp with Disable CLC430 APPLICATIONS: FEATURES typical : • • • • • • • • • • • • • video distribution multiple-line driver analog bus driver video signal multiplexing DAC output buffer CCD amplifier
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CLC430
55MHz
100ns
CLC430
675ft
CLC430,
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MN7130
Abstract: MN520 MN5240
Text: MN5240 /K fJ ? M ic r o 10 and 12-Bit H IG H-SPEED A/D CONVERTERS N e tw o r k s A D IVISION O F U N I T M M CO R PO R ATIO N FEATURES • Fast Conversion Times: 5psec Max for 12 Bits 4.2psec Max for 10 Bits • Complete A/D Function: internal Clock Internal Reference
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MN5240
12-Bit
32-Pin
MIL-STD-883
MN5240
MN7130
MN520
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Untitled
Abstract: No abstract text available
Text: KM616FS1010, KM616FR1010 Family CMOS SRAM 64Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM FEATU RES GENERAL DESCRIPTION . Process Technology : 0.4ym Full CM O S The KM616FS1010 and KM616FR1010 family Is fabricated by • Organization :64Kx16b*
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KM616FS1010,
KM616FR1010
64Kx16b*
64Kx1
KM616FS1010
44-TSOP2-400F
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UTM ceramic RESISTOR 212-3
Abstract: AD2033 rs 380sh NyQuist 3 axis DAX 3S OP27GN IC BD 540 LYS HTC Desire 816 Dual SIM HTC A5 12SmV cmos cookbook Monsanto 7 segment displays
Text: General Information ANALOG DEVICES DATA-ACQUISITION DATABOOK 1984 VOLUME I INTEGRATED CIRCUITS Table of Contents Ordering Guide Q Operational Amplifiers Instrumentation & Isolation Amplifiers c Analog Signal Processing Components m a Voltage References Temperature Measurement Components
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS MEMORY PRODUCTS TC55256PL-10/PL-12/PL-15 TC55256FL-10/FL-12/FL-15 DESCRIPTION^ The TC55256PL/FL is 262,144 bit static random access memory organized as 32,768 words by 8 bits using CMOS technology, and operated from a single 5V supply. Advanced
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TC55256PL-10/PL-12/PL-15
TC55256FL-10/FL-12/FL-15
TC55256PL/FL
100ns.
TG55258H
-10/PL-12/PL-15
DIP28-P-600)
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2S*1206
Abstract: 2S1201 2S1204 2SJ224 2SJ214LS 2s1208 2S1209 2SJ200 2SJ214 2SJ201
Text: - 24 - « tt m £ & m m f t ? 1 * K jç. H V m * £ (V) * * P d /P c h (A) % m Í& * * (W) I gss (max) (A) Vg s (V) 0*3 (min) (max) Vd s (A) (A) (V) (Ta=25Xl) (min) (max) Vd s (V) (V) (V) Id (A) (min) (S) Vd s {\ l f (V) 1d (A) 2SJ200 LF PA MOS P E -180 DSS
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Ta-25
2SJ200
2SJ201
2SJ202
2SJ203
-200b
2SJ204
2SJ221
130ns,
490nstyp
2S*1206
2S1201
2S1204
2SJ224
2SJ214LS
2s1208
2S1209
2SJ214
2SJ201
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Untitled
Abstract: No abstract text available
Text: TC4017BP/BF C 2M O S D IG IT A L I N T E G R A T E D C IR C U IT SIL IC O N M O N O LIT H IC TC4017BP/TC4017BF DECADE COUNTER/DIVIDER TC4017BP/BF is decimal Johnson counter consisting of 5 stage D-type flip-flop equipped with the decoder to convert the output to decimal.
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TC4017BP/BF
TC4017BP/TC4017BF
TC4017BP/BF
I20ns
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b-56C
Abstract: 2.L A6
Text: H B56C18 A/AT/B-8 A/10 A/12 A 1,048,576-Word x 8-Bit High Density Dynamic RAM Module Pin No. • DESCRIPTION T h e H B 56C 18 is a 1M x 8 static column mode dynam ic RAM m odule, m ounted eight 1-Mbit D R A M H M 511002JP sealed in SOJ package. An outline of the H B 56C 18 is 30-pin single in-line package
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B56C18
576-Word
511002JP)
30-pin
511002H
b-56C
2.L A6
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TC55256
Abstract: cl2v TC55256PL-10 TC55256FL-10
Text: 34»«! TOSHIBA MOS MEMORY PRODUCTS TC55256PL-10/PL-12/PL-15 TC55256FL-10/FL-12/FL-15 ¡d e s c r i p t i o n ! The TC55256PL/FL is 262,144 bit static random access memory organized as 32,768 words by 8 bits using CMOS technology, and operated from a single 5V supply.
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TC55256PL-10/PL-12/PL-15
TC55256FL-10/FL-12/FL-15
TC55256PL/FL
100ns.
TC55256FL-1O/FL-12/FL-15
DIP28-P-600)
S0P28-P-450)
TC55256
cl2v
TC55256PL-10
TC55256FL-10
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101490
Abstract: P22n HM50464P-12 50464 ram
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY
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ADE-40
101490
P22n
HM50464P-12
50464 ram
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Untitled
Abstract: No abstract text available
Text: DS2405 DALLAS SEMICONDUCTOR DS2405 Addressable Switch FEATURES PIN ASSIGNMENT TO -92 • Open drain PIO pin is controlled by matching 64-bit, laser-engraved registration number associated with each device C-LEAD PACKAGE • Logic level of open drain output can be determined
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DS2405
64-bit,
DS2405â
64-bit
48-bit
2L1413Q
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TENTATIVE TA8750AN TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8750AN SECAM CHROMA PROCESSOR The TA875GAN is a SECAM chroma processor packaged in a 36 lead, shrink type, dual in line plastic package. The TA8750AN includes all of the functions required to
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TA8750AN
TA875GAN
TA8750AN
TA8691N
TA8690AN.
TA7698AP
SDIP36-P-500-1
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Untitled
Abstract: No abstract text available
Text: COMPONENTS b u r r - bro w n corp H E D 1 17313b5 0015305 4 I - - B U R R -B R O W N T - “7 ^ - cr7 - 1 0 OPA600/883B SERIES MODEL NUMBERS: [ OPA600VM/883B OPA6ÛOUM/883B OPA6OOVM OPA6OOUM REVISION E APRIL, 1987 Fast Settling - Wideband
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17313b5
OPA600/883B
OPA600VM/883B
OUM/883B
15nsec
200mA
11and
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