24E166
Abstract: E141-E142 GDIP1-T16 E74-E75 E137-E138 220 e78
Text: INCH-POUND MIL-M-38510/113B 21 June 2005 SUPERSEDING MIL-M-38510/113A 10 February 2005 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, 8 BIT, DIGITAL-TO-ANALOG CONVERTERS, MONOLITHIC SILICON This specification is approved for use by all Departments and Agencies of the Department of Defense.
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MIL-M-38510/113B
MIL-M-38510/113A
MIL-PRF-38535
DAC-08
DAC-08A
24E166
E141-E142
GDIP1-T16
E74-E75
E137-E138
220 e78
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top247
Abstract: E36 core 067.043 TOP247-230V K2006 K2006 Kaschke kaschke SP-E 16 MAX39 kaschke bv STOP247-15V-67W
Text: Technical Data Sheet Customer: Part designation: Customer part no.: Kaschke Göttingen SP-E 36/11 STOP247-15V-67W max.37,5 d:/bv/067024.dwg 8 EIII EIII 1 max.39 AIII AIII 0,7 9 35±0,3 AI EI AIV EIV EII AII a. WS rechts 16 30±0,3 6 WI ½ prim 3,5±0,5 max.31
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STOP247-15V-67W
/bv/067024
E36/11
K2006
OP247-230V)
132kHz
50Hz/2s)
top247
E36 core
067.043
TOP247-230V
K2006 Kaschke
kaschke SP-E 16
MAX39
kaschke bv
STOP247-15V-67W
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n-channel JFET sot23
Abstract: Capacitance j107 S 5018 J108 J108-110 J110 SST108 SST109 SST109-110 SST110
Text: N-Channel JFET Switch CORPORATION J108 – J110 / SST108 – SST110 FEATURES Low Cost Automated Insertion Package Low Insertion Loss No Offset or Error Voltages Generated by Closed Switch Purely Resistive High Isolation Resistance from Driver Fast Switching
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SST108
SST110
OT-23
-55oC
150oC
135oC
n-channel JFET sot23
Capacitance j107
S 5018
J108
J108-110
J110
SST108
SST109
SST109-110
SST110
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Untitled
Abstract: No abstract text available
Text: N-Channel JFET Switch LLC J108 – J110 / SST108 – SST110 FEATURES Low Cost Automated Insertion Package Low Insertion Loss No Offset or Error Voltages Generated by Closed Switch Purely Resistive High Isolation Resistance from Driver Fast Switching Low Noise
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SST108
SST110
OT-23
-55oC
150oC
135oC
DS038
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z046
Abstract: 172B 2N1854
Text: ~L-S-19500/ 172B NAVY 20 November 1968 SUPERSEDING MIL-s-19500/ 172A(NAVY) 180ctober 1961 NffLITARY SEMICONDUCTOR DEVSCE, SPEC1F1CATION TRANSISTOR, PNP, GERMANfUM, TYPE 2N1854 1. SCOPE 1.1 scope. tt-ansisto=i. This ape.ification covers the detail requirements
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L-S-19500/
MIL-s-19500/
180ctober
2N1854
MIL-S19500,
withMSL-S-19500.
MIL-S-195Wi
-NZ04
z046
172B
2N1854
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ED1913
Abstract: GM300 GM3002A-HYB GP520A GP521 TR-15 microphone preamp agc I08 Marking
Text: MAESTRO I Programmable Hybrid GM3002A-HYB DATA SHEET FEATURES DESCRIPTION • programmable parameters - gain - low pass filter - high pass filter - AGC threshold - release time - MPO - receiver bias current • fixed attack time • typical gain 60 dB • voltage drive output stage
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GM3002A-HYB
GP520A
GP521
ED1913
GM300
TR-15
microphone preamp agc
I08 Marking
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54175
Abstract: 2080-LC20-20QBB
Text: User Manual Micro820 Programmable Controllers Catalog Numbers 2080-LC20-20QWB, 2080-LC20-20QBB, 2080-LC20-20AWB, 2080-LC20-20QWBR, 2080LC20-20QBBR, 2080-LC20-20AWBR Important User Information Solid-state equipment has operational characteristics differing from those of electromechanical equipment. Safety
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Micro820
2080-LC20-20QWB,
2080-LC20-20QBB,
2080-LC20-20AWB,
2080-LC20-20QWBR,
2080LC20-20QBBR,
2080-LC20-20AWBR
RA-DU002,
2080-UM005B-EN-E
2080-UM005A-EN-E
54175
2080-LC20-20QBB
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Untitled
Abstract: No abstract text available
Text: NOTES: 1. MATERIAL NUMBER, BATCH CODE, UL CSA MARKING TO BE PRINTED ON THE CONNECTOR AS PER E -3 6 5 0 2 -0 0 5 2. PRODUCT SPECIFICATION PS:85013-001 3. PACKING SPECIFICATION PK: 36512-001 4. CUT FACES OF TIP WITHOUT PLATING IS PERMITTED 5. REFERENCE AREA OF PLATING
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SDA-850
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Untitled
Abstract: No abstract text available
Text: DATA SHEET M FC" / _/ MOS INTEGRATED CIRCUIT ¿¿PD482444, 482445 4M-Bit Dual Port Graphics Buffer 256K WORDS BY 16 BITS Description The /iPD482444 and ¿i PD482445 have a random access port and a serial access port. The random access port has a 4M-bit 262,144 words x 16 bits memory cell array structure. The serial access port can perform
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PD482444,
/iPD482444
PD482445
/PD482445
543taoi!
008to
//PD482444,
/iPD482444and
iPD482444GW
64-Pin
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HPG800
Abstract: 1854a
Text: Ordering n u m b e r:EN 1854A No.1854A _ 2SC3661 NPN Epitaxial Planar Silicon Transistor High h/pE, Low-Frequency General-Purpose Amp Applications Applications . Low frequency general-purpose amplifiers, drivers, muting circuit Features . Very small-sized package permitting 2SC366l-used sets to be made smaller,
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2SC366l-used
HPG800
1854a
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LPC47B34X
Abstract: 8042 keyboard and mouse ner en8 gp77
Text: LPC47B34X STANDARD MICROSYSTEMS CORPORATION 128 Pin Enhanced Super I/O Controller with LPC Interface for Consumer Applications FEATURES 3.3 Volt Operation 5V Tolerant LPC Interface Floppy Disk Controller (Supports 2 FDCs) Multi-Mode Parallel Port Two Full UARTs
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LPC47B34X
IRQ12)
LPC47B34x
8042 keyboard and mouse
ner en8
gp77
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LMM 2057
Abstract: t3hs marking ADMI 2SC3142 high power amp 100mhz 1w
Text: imQlh 22E D SA NY O S E M I C O N D U C T O R CORP OOOLTSl 0 T-3HS 2SC3142 N P N Epitaxial Plan ar S ilic o n T ransistor 2018A High-Frequency General-Purpose Amp Applications 1066A Features . FBET s e r i e s . . C o m p a c t p a c k a g e e n a b l i n g c o m p a c tn e s s o f s e t s .
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7cn707tI
2SC3142
1066a
750MHz
LMM 2057
t3hs
marking ADMI
2SC3142
high power amp 100mhz 1w
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T3HS
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR 22E CORP im Q lh D OOOLTSl T-3HS 2SC3142 N PN Epitaxial Planar Silicon Transistor 2018A High-Frequency General-Purpose Amp Applications 1066A Features . FBET s e r i e s . . C o m p a c t p a c k a g e e n a b l i n g c o m p a c tn e s s o f s e t s .
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2SC3142
750MHz
T3HS
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Untitled
Abstract: No abstract text available
Text: HY62SF16404D Series 256K x 16bit full CMOS SRAM Preliminary DESCRIPTION FEATURES The HY62SF16404D is a high speed, super low power and 4Mbit full CM O S SRAM organized as 256K words by 16bits. The HY62SF16404D uses high performance full CM O S process technology
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HY62SF16404D
16bit
16bits.
48-ball
HYSF6404D
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HYUF6404D
Abstract: HYUF6404
Text: H Y 6 2U F 1 640 4D S eries 2 56K X 16bit full C M O S SRAM Preliminary DESCRIPTION FEATURES The HY62UF16404D is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62UF16404D uses high performance full CMOS process technology
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16bit
HY62UF16404D
16bits.
48-ball
HYUF6404D
HYUF6404
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Untitled
Abstract: No abstract text available
Text: HY62SF16406D Series 256K x 16bit full CMOS SRAM Preliminary DESCRIPTION FEATURES The HY62SF16406D is a high speed, super low power and 4Mbit full CM O S SRAM organized as 256K words by 16bits. The H Y62SF16406D uses high performance full CM O S process technology
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HY62SF16406D
16bit
16bits.
Y62SF16406D
48-ball
HYSF6406D
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d482445
Abstract: UPD482445 D482444 MPD482445GW-60
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / /¿PD482444, 482445 4M-Bit Dual Port Graphics Buffer 256K-WORD BY 16-BIT Description The /¿PD482444 and ¿¿PD482445 have a random access port and a serial access port. The random access port has a 4M-bit 262, 144 words x 16 bits memory cell array structure. The serial access port can perform clock
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uPD482444
uPD482445
256K-WORD
16-BIT
PD482444
PD482445
iPD482445
5431ooi2
465t8ooS
008igoo?
d482445
D482444
MPD482445GW-60
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Untitled
Abstract: No abstract text available
Text: H Y 6 2Q F 164 04 C S eries 256K X 16bit full CMOS SRAM DESCRIPTION FEATURES The HY62QF16404C is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62QF16404C uses high performance full CMOS process technology and is designed for high speed and low power
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16bit
HY62QF16404C
16bits.
48-ball
x16bit
HYQF6404C
|
marking 1bc
Abstract: No abstract text available
Text: HY62QF16406D Series 256K x 16bit full CMOS SRAM Preliminary DESCRIPTION FEATURES The HV62QF16406D is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62QF16406D uses high performance full CMOS process technology
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HY62QF16406D
16bit
HV62QF16406D
16bits.
48-ball
HYQF6406D
marking 1bc
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kor 2001
Abstract: No abstract text available
Text: H Y 6 2Q F 164 06 C Series 256K X 16bit full CMOS SRAM DESCRIPTION FEATURES The H Y62Q F16406C is a high speed, super low power and 4Mbit full CM O S SRAM organized as 256K words by 16bits. The HY62Q F16406C uses high performance full CM O S process technology
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16bit
F16406C
16bits.
HY62Q
48-ball
HYQF6406C
kor 2001
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HYUF6406C
Abstract: 6406C
Text: H Y 6 2U F 1 640 6C S eries 256K X16bit full CMOS SRAM DESCRIPTION FEATURES The H Y62UF16406C is a high speed, super low power and 4M bit full CM O S SRAM organized as 256K w ords by 16bits. The HY62UF16406C uses high perform ance full CM OS process technology
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X16bit
Y62UF16406C
16bits.
HY62UF16406C
48-ball
HYUF6406C
6406C
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Untitled
Abstract: No abstract text available
Text: sirice LPC47S42X STANDARD MICROSYSTEMS CORPORATION Enhanced Super I/O Controller with LPC Interface for Server Applications FEATURES 3.3 Volt Operation 5V Tolerant Floppy Disk Controller (Supports Two FDCs) Multi-Mode Parallel Port Two UARTs 8042 Keyboard Controller
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82077AA
LPC47S42x
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Untitled
Abstract: No abstract text available
Text: HY62UF16404C Series 256K x16bit full CMOS SRAM DESCRIPTION FEATURES T h e H Y 6 2 U F 1 6 4 0 4 C is a high speed, super low pow er and 4M bit full C M O S S R A M organized as 2 5 6 K words by 16bits. T h e H Y 6 2 U F 1 6 4 0 4 C uses high perform ance full C M O S process technology
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HY62UF16404C
x16bit
16bits.
48-ball
16bit
HYUF6404C
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NR 9600
Abstract: No abstract text available
Text: LPC47B37X STANDARD MICROSYSTEMS CORPORATION 100 Pin Enhanced Super I/O for LPC Bus with SMBus Controller for Commercial Applications FEATURES 3.3 Volt Operation 5V Tolerant Floppy Disk Controller (Supports 2 FDCs) Multi-Mode Parallel Port Two UARTs 8042 Keyboard Controller
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LPC47B37X
82077AA
LPC47B37x
NR 9600
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