Untitled
Abstract: No abstract text available
Text: * QUINT AND/NAND GATE SYNERGY SY100S304 SEMICONDUCTOR FEATURES DESCRIPTION Max. propagation delay of I050ps Iee min. of -60mA ESD protection of 2000V Extended supply voltage option: — VEE = -4.2V to -5.46V Voltage and temperature compensation for Improved noise Immunity
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SY100S304
I050ps
-60mA
F100K
SY100S304
GD13fil
SY100S304DC
D24-1
SY1O0S304FC
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F100K
Abstract: SY100S304 SY100S304DC SY100S304JC
Text: * QUINT AND/NAND GATE SYNERGY SEMICONDUCTOR FEA TU RES SY100S304 D E S C R IP T IO N Max. propagation delay of I050ps Ie e min. of -60mA ESD protection of 2000V Extended supply voltage option: — VEE = -4.2V to -5.46V Voltage and temperature compensation for
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OCR Scan
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SY100S304
I050ps
-60mA
F100K
SY100S304
SY100S304DC
D24-1
SY1O0S304FC
F24-1
F100K
SY100S304JC
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Untitled
Abstract: No abstract text available
Text: Order this document by MC10E445/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4-Bit Serial/Parallel Converter • • • • • • • • MC10E445 MC100E445 On-Chip Clock -s-4 and +8 2.5Gb/s Data Rate Capability Differential Clock and Serial Inputs Vb b Output for Single-Ended Input Applications
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MC10E445/D
MC10E445
MC100E445
MC10/100E445
3PHX32006-0
MPS-39293
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