Untitled
Abstract: No abstract text available
Text: MSB52C CRO MSB52D MSB52T MSB52W R E D L E D L A M PS DESCRIPTION 04.8 ' 0.19 “ M S B 52 S eries are red L E D lam p w ith 4.8m m diam eter round type epoxy package. 7.2 (0.28) 0.7 ' |~(0.027) M S B 52C is red chip w ith red transparent lens. M S B 52D is red chip w ith red diffused lens.
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MSB52C
MSB52D
MSB52T
MSB52W
SB52T
i00uA
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TIS97
Abstract: TIS98 BOX69477
Text: T IS 97 TIS 98 NFN SILICON PLANAR EPITAXIAL TRANSISTORS CASE TO-92 F THE TIS97 AND TIS98 ARE LOW NOISE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN HI-FI AUDIO AMPLIFIERS AND GENERAL PURPOSE LOW FREQUENCY APPLICATIONS. CEB ABSOLUTE MAXIMUM RATINGS TIS97
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TIS97
TIS98
T0-92F
TIS98
200mA
200mA
360mW
500mW
BOX69477
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MSB52
Abstract: MSB52C MSB52D MSB52T MSB52W
Text: MSB52C MSB52D MSB52T MSB52W RED LED LAMPS DESCRIPTION M SB52 Series are red LED lamp w ith 4.8m m diam eter round type epoxy package. M SB52C is red chip with red transparent lens. M SB 52D is red chip with red diffused lens. M SB 52T is red chip with clear transparent lens
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MSB52C
MSB52D
MSB52T
MSB52W
MSB52
Ta-25Â
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Untitled
Abstract: No abstract text available
Text: T IS 98 CASE TO-92 F THE TIS97 AND TIS98 ARE LOW NOISE NPN SILICON PLANAE EPITAXIAL TRANSISTORS FOR USE IN H I-F I AUDIO AMPLIFIERS AND GENERAL PURPOSE LOW FREQUENCY APPLICATIONS. CEB ABSOLUTE MAXIMUM RATINGS C o lle c to r-B a s e V o ltag e C o lle c to r - E m itte r V o ltag e
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TIS97
TIS98
TIS98
TIS97
100pA
100uA
10Kfl-
100Hz
100jjA
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