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    I R 032P Search Results

    I R 032P Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    R9A06G032PGBG#AC1 Renesas Electronics Corporation Microprocessors Featuring 5 Ethernet Ports and Latest Redundancy Protocol for Industrial Network Master Devices Visit Renesas Electronics Corporation
    10127820-1032PLF Amphenol Communications Solutions Minitek® Pwr 4.2, Dual Row, Vertical Through Hole Header, 80u\\ Min Tin plating, Natural Color, 10 Positions, Non GW Compatible Nylon66, Tray Packing, With Short Tail & Pegs. Visit Amphenol Communications Solutions
    10127820-2032PCLF Amphenol Communications Solutions Minitek® Pwr 4.2, Dual Row, Vertical Through Hole Header, 80u\\ Min Tin plating, Natural Color, 20 Positions, Non GW Compatible Nylon66, With Short Tail & Pegs, Tape and Reel with cap. Visit Amphenol Communications Solutions
    10127820-1032PTLF Amphenol Communications Solutions Minitek® Pwr 4.2, Dual Row, Vertical Through Hole Header, 80u\\ Min Tin plating, Natural Color, 10 Positions, Non GW Compatible Nylon66, With Short Tail & Pegs, Tape and Reel without cap. Visit Amphenol Communications Solutions
    69802-032PT Amphenol Communications Solutions Surface Mount Type Sockets Visit Amphenol Communications Solutions
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    I R 032P Price and Stock

    Lumissil Microsystems IS32PM3420B-GRLA3-TR

    Switching Voltage Regulators 3.8V TO 36V, 3A, 400kHz, SYNCHRONOUS STEP-DOWN VOLTAGE REGULATOR , SOP-8-EP, 4.9mmx6.0mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IS32PM3420B-GRLA3-TR
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    Lumissil Microsystems IS32PM3420A-GRLA3-TR

    Switching Voltage Regulators 3.8V TO 36V, 3A, 400KHZ, SYNCHRONOUS STEP-DOWN VOLTAGE REGULATOR, SOP-8-EP, 4.9mmx6.0mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IS32PM3420A-GRLA3-TR
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    Lumissil Microsystems IS32PM3426-QWCLA3-TR

    Switching Voltage Regulators 3.8V TO 36V, 2A, 2.2MHZ, SYNCHRONOUS STEP-DOWN VOLTAGE REGULATOR ,WFCQFN14, 3mm4mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IS32PM3426-QWCLA3-TR
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    Lumissil Microsystems IS32PM3427-QWCLA3-TR

    Switching Voltage Regulators 3.8V TO 36V, 4A, 2.2MHZ, SYNCHRONOUS STEP-DOWN VOLTAGE REGULATOR , WFCQFN14, 3mm4mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IS32PM3427-QWCLA3-TR
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    I R 032P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: R1LP0408D Series 4Mb Advanced LPSRAM 512-kword x 8-bit R10DS0104EJ0200 Rev.2.00 2012.5.30 Description The R1LP0408D Series is a family of 4-Mbit static RAMs organized 512-kword × 8-bit, fabricated by Renesas’s high-performance CMOS and TFT technologies. The R1LP0408D Series has realized higher density, higher


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    PDF R1LP0408D 512-kword R10DS0104EJ0200 32-pin 55/70ns

    R1LP0408D

    Abstract: R1LP0408DSB-5 R1LP0408DSP 032P2S-A R1LP0408DSB-5SI R1LP0408DSB R1LP0408DSP-7SI R10DS0104EJ0200 R1LP0408DSP-5SR R1LP0408DSP-5SI
    Text: R1LP0408D Series 4Mb Advanced LPSRAM 512-kword x 8-bit R10DS0104EJ0200 Rev.2.00 2012.5.30 Description The R1LP0408D Series is a family of 4-Mbit static RAMs organized 512-kword × 8-bit, fabricated by Renesas’s high-performance CMOS and TFT technologies. The R1LP0408D Series has realized higher density, higher


    Original
    PDF R1LP0408D 512-kword R10DS0104EJ0200 32-pin 55/70ns R1LP0408DSB-5 R1LP0408DSP 032P2S-A R1LP0408DSB-5SI R1LP0408DSB R1LP0408DSP-7SI R1LP0408DSP-5SR R1LP0408DSP-5SI

    IR 049P

    Abstract: 221PN 236PN 034E 036PH 292PH 28SPN 041P GUP COTO
    Text: 09/11/02 13 :3 5 N O .919 J1 COHBECTOft, BKSranST 1. 1 * 1 C O T P L Ï M G , E L E C T R I C , S O L D E R C O P O R r t A H G B M O U N T TERMTKATION P I H r.KMKH&T. T h i s d r a w i n g H H . - C - 2 6 5 0 0 , T y p e E < lex- c i r c u i t a p p l i c a t i o n s


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    PDF 50DDER 13SS6 IR 049P 221PN 236PN 034E 036PH 292PH 28SPN 041P GUP COTO

    M37475M4-XXXSP

    Abstract: M37476M4-XXXFP MELPS-740 MELPS 740
    Text: baMTflSfl 001715b 750 • M I T H M IT S U B S S H f M IC R O C O M P U T E R S M37475IVS2-XXXSP,&i37475IVI4-XXXSP M 3 7 4 7 5 IV 1 8 -X X X S P ,M 3 7 4 7 6 IV 1 2 -X X X S P /F P I V I3 7 4 7 6 M 4 - X X X S P / F P , M 3 7 4 7 6 iy i8 - X X X S P / F P


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    PDF 001715b M37475IVS2-XXXSP, i37475IVI4-XXXSP M37475M2-XXXSP 32-pin M37476M2XXXSP/FP 42-pin. 56-pin iW37475IVJ2- IVG37475M M37475M4-XXXSP M37476M4-XXXFP MELPS-740 MELPS 740

    A1073

    Abstract: sony KSS 123 cxa1073 MAGNETIC SWITCH CXA1073M CXA1073Q CXAI073M multivibtrator 00112m D011223
    Text: _ CXA1073M/Q S O N Y « Read/Write Amplifier for Floppy Disk Drive D escription C X A I0 7 3 M 3 0 pin SOP Plastic C X A 1 0 7 3 M /'Q are IC’s for FDD (Floppy Disk Drive) usage. Functions such as Read, W rite, Erase and supply voltage detection circuits are


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    PDF CXA1073M/Q current3fl23fl3 DD11241 CXA1073M OP-30P-L01 OP030-P-0375-A CXA1073Q OFP-32P-L01 A1073 sony KSS 123 cxa1073 MAGNETIC SWITCH CXA1073Q CXAI073M multivibtrator 00112m D011223

    DIP014-P-0300D

    Abstract: B92 62 diode pa c12 100 12p P050P ip022 TSOP050-P
    Text: 172 MOS Memories M H O 188 CCD Area Image Sensors (C □ □ ) 193 CCD Area/Linear Image Sensors (C □ □ ) 194 CCD Camera Modules/TFT LCD Devices (C D D ) 196 Bipolar ICs (B DD) 197 Discrete Semiconductors (D DD) 212 171 O u tlin e s MOS LSIs (L E O )


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    PDF SO-14 SO-16 DIP014-P-0300D B92 62 diode pa c12 100 12p P050P ip022 TSOP050-P

    SM5* sharp

    Abstract: t9816
    Text: SHARP Microcomputer Data Sheet SM5K6/SM5K7 4-Bit Single-Chip Microcomputer FEATURES DESCRIPTION • ROM C apacity The S M 5K 6/5K 7 are C M O S 4-bit single-chip m icro­ com puters incorporating 4-bit parallel processing fu n c ­ tion, serial interface fu nctio n, ROM, RAM , 10-bit A/D


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    PDF 10-bit J63428 T98160 SM5* sharp t9816

    YM12L

    Abstract: No abstract text available
    Text: sony . CXK58110OTM/YM : ! S M W 131072-word x 8-bit High Speed CMOS Static RAM D e s c r ip tio n CXK5811OOTM/YM is a 1M bits, 131072 words by 8 bits, CMOS static RAM. It is suitable for portable and battery back-up systems which require extremely small package and low stand-by current.


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    PDF CXK58110OTM/YM 131072-word CXK5811OOTM/YM CXK581100TM CXK581100YM CXK581100TM/YM-10L, CXK58110OTM CXK581 CXK58110OYM YM12L

    P028

    Abstract: MN15P5402 j321C MN155201 QFH032-P-0707
    Text: □ MN155201 M N155201 1 Type 1 ROM x8~bit 2K 1 RAM (x4-bit) 128 98 1 Num ber ot Instructions 1.0ps (at 4 .5 to 5 .5 V , 8M Hz) • Minimum Instruction Execution Time 4 . Ops (at 2 .0 to 5 .5 V , 2M Hz) 1 Interrupts • RESET • External (Key In te rru p t Is available)


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    PDF N155201 MN155201 sop028-p-0375 P53/SBO P40/SBI P41/IBQ j321C P028 MN15P5402 MN155201 QFH032-P-0707

    TRS-X

    Abstract: No abstract text available
    Text: SM5K3/SM5K4/SM5K5 SHARP Microcomputer Data Sheet 4-Bit Single-Chip Microcomputer FEATURES DESCRIPTION • 2,048 x 8-bits ROM C apacity The S M 5 K 3 /5 K 4 /5 K 5 are C M O S 4 -b it s in g le -c h ip m icrocom puters incorporating 4 -b it parallel processing


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    PDF 36-Pin 32-Pin 30-Pin 28-Pin 10-bit J63428 T98159 TRS-X

    MN15P5402

    Abstract: MN155402 MN155202 QFH032-P-0707
    Text: □ MN155202/402 1 Type M N 15 5 2 0 2 /4 0 2 1 ROM x8-bit 2 K /4 K 1 RAM (x4-bit) 1 2 8 /1 9 2 M Num ber of Instructions 98 1 .0 ms (at 4 .5 to 5 .5 V , 8M Hz) 1 Minimum Instruction Execution Time 4 .Ops (at 2 .0 to 5 .5 V , 2M Hz) 1 Interrupts •R E S E T


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    PDF MN155202/402 px-icei500 px-prbi552Q2 MN15P5402 SDIP028-P-0400 S0P028-P-Q375 P52/SBT P53/SBO MN155402 MN155202 QFH032-P-0707

    PO3C

    Abstract: 5K324 30-PIN 32-PIN P42C QFP036-P-1010 SHARP SM5 SM5* sharp
    Text: SM5K3/SM5K4/SM5K5 SHARP Microcomputer Data Sheet 4-Bit Single-Chip Microcomputer FEATURES DESCRIPTION • 2,048 x 8-bits ROM C apacity T he S M 5 K 3 /5 K 4 /5 K 5 are C M O S 4 -b it s in g le -c h ip m icrocom puters incorporating 4 -b it parallel processing


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    PDF 36-Pin 32-Pin 30-Pin 28-Pin 10-bits 5k3-24 PO3C 5K324 P42C QFP036-P-1010 SHARP SM5 SM5* sharp

    Untitled

    Abstract: No abstract text available
    Text: CY7C340 EPLD Family 0 CYPRESS Multiple Array Matrix High-Density EPLDs — VHDL simulation ViewSim Features • Erasable, user-configurable CMOS EPLDs capable o f implementing highdensity custom logic functions • 0.8-micron double-metal CMOS EPROM technology (CY7C34X)


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    PDF CY7C340 CY7C34X) 65-micron CY7C34XB) 7C342 342-30H 7C342â 35HMB

    epm5032dc

    Abstract: 5130Q 5128A 74151 waveform 7C340 epld 342B rc 74151
    Text: CY7C340 EPLD Family •= CYPRESS Multiple Array Matrix High-Density EPLDs Features — VHDL sim ulation ViewSim M • Erasable, user-configurable CMOS EPLDs capable o f implementing highdensity custom logic functions — Available on PC and Sun platforms


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    PDF CY7C34X) 65-micron CY7C34XB) CY7C340 5130LC 5130L 5130LI 5130QC 5130Q epm5032dc 5128A 74151 waveform 7C340 epld 342B rc 74151

    ta31033

    Abstract: TA31032P TA31033P ta31033ap ta31032 TA3103
    Text: SPEECH NETWORK ICs SPEECH NETWORK FOR TELEPHONE SET FEATURES • Direct interface w ith receiver dynamic type, electrom agnetic type of low impedance type is possible. • This 1C is able to change over an input from transmitter to an input of dial signal (DTMF signal) and output to


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    PDF TA31033P TA31033AP TA31032P TA31033P/AP 20dBV TA31033P/AP-9 TA31032P ta31033 ta31032 TA3103

    CXK584000M

    Abstract: CXK584000P DIP32-P-0600-A CXK584000 CXK584000TM
    Text: SONY CXK584000TM/YM/M/P i^ ^ io L L 524288-word x 8-bit High Speed CMOS Static RAM Description CXK584000TM/YM/M/P is a 4,194,304 bits high speed CMOS static RAM organized as 524288-word by 8-bits. Polysilicon TFT cell technology realized extremely low stand-by current and higher data


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    PDF CXK584000TM/YM/M/P 524288-word 100ns CXK584000TM/YM/M/P-55L/55LL CXK584000TM/YM/M/P-70L/70LL CXK584000TM/YM/M/P-1 -55L/70L/1 CXK584000M CXK584000P DIP32-P-0600-A CXK584000 CXK584000TM

    Untitled

    Abstract: No abstract text available
    Text: 30-36 GHz GaAs MMIC Power Amplifier ESAlpha AA032P1-00 Chip C lit lin e F eat ur e s • Single Gate and Drain Biases ■ 27 dBm Output Power at 31 GHz 0.000 0.120 ■ 12 dB Small Signal Gain 0.107 ■ 0.25 im Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing


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    PDF AA032P1-00 MIL-STD-883 032P1-00 2/99A

    Untitled

    Abstract: No abstract text available
    Text: sontî* CXK584001 TRfl/YI\fl/Rfl/P 524288-word x 8-bit High Speed CMOS Static RAM Description CXK584001TM/YM/M/P is a 4,194,304 bits high speed CMOS static RAM organized as 524,288 words by 8-bits. Polysilicon TFT cell technology realized extremely low stand-by current and higher data


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    PDF CXK584001 524288-word CXK584001TM/YM/M/P -10L/10LL 100ns -12U12LL 120ns -10L/12L -10LL/12LL Q32-P-04QO-B

    Ah 55l

    Abstract: No abstract text available
    Text: SONY CXK584000TM/YM/M/P|^C7oll0ioll 524288-word x 8-bit High Speed CMOS Static RAM Description CXK584000TM/YM/M/P is a 4,194,304 bits high speed CMOS static RAM organized as 524288-word CXK584000TM CXK584000YM 32 pin TSOP Plastic 32 pin TSOP (Plastic) CXK584000M


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    PDF CXK584000TM/YM/M/P| 524288-word CXK584000TM/YM/M/P CXK584000M CXK584000TM/YM/M/P-55L/55LL CXK584000TM/YM/M/P-70L/70LL CXK584000TM/YM/M/P-10L/1OLL -55L/70L/10L Ah 55l

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK5V8512TM 65536-word x - 8 5 L L X /1 0 L L X 8-bit High Speed CMOS Static RAM Description The CXK5V8512TM is a high speed CMOS static RAM organized as 65536-words by 8-b'rts. A polysilicon TFT cell technology realized extremely low stand-by current and higher data


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    PDF CXK5V8512TM 65536-word CXK5V8512TM 65536-words -85LLX -10LLX 100ns GQ07tit

    P0820A

    Abstract: No abstract text available
    Text: SONY CXK581000ATM/AYM/AM/AP -55SL/70SL/1OSL 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by CXK581000ATM CXK581000AYM 32 pin TSOP Plastic 32 pin TSOP (Plastic)


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    PDF CXK581000ATM/AYM/AM/AP -55SL/70SL/1OSL 131072-word 131072-words -55LL755SL -70LL770SL -10LL710SL P0820A

    AN3813K driver circuit

    Abstract: diode b83 AN3814K hdd spindle motor AN6666S dc motor 0550 drive 3 phase circuit
    Text: General Purpose Linear ICs • Motor Control Series continued Category Sensorless motordriver Motor speed control Type No. Functions Applications P ack ag e No. AN3813K 5 ± 0 .5 1.5A lOOniA 3-phase half wave drive, Output T r built-in, P G /F G processing circuit built-in. Single phase Hall elem ent input,


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    PDF 100mA 100mA AN3813K 016-P AN6665S 250mA 180mA OP020-P-0300B AN6666S 500mA AN3813K driver circuit diode b83 AN3814K hdd spindle motor AN6666S dc motor 0550 drive 3 phase circuit

    CXA1960Q

    Abstract: 836 gfp
    Text: SONY I_ C X A 1980Q QQ Dolby B Type Noise Reduction System with Playback Equalizer Description The CXA1980G is an IC designed for use in car stereos. Functions include Dolby B type noise reduction NR , playback equalizer and interval detection between tracks (Music Sensor) into a


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    PDF 1980Q CXA1980G 32-pin CXA1980Q 32PIN GFP-32P-LQ1 032-P-0707-A fl3A23fl3 001375b CXA1960Q 836 gfp

    Untitled

    Abstract: No abstract text available
    Text: 30-36 GHz GaAs MMIC Power Amplifier ESAlpha AA032P1-00 Features Chip Outline • Single Gate and Drain Biases o ■ 27 dBm Output Power at 31 GHz ■ 12 dB Small Signal Gain ■ 0.25 im Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing ■ 100% Visual Inspection to MIL-STD-883


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    PDF AA032P1-00 MIL-STD-883 032P1-00 8/98A