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    2n0608

    Abstract: SP000218830 i 2n0608 IPI80N06S2-08 IPB80N06S2-08 IPP80N06S2-08 PG-TO263-3-2 marking D58
    Text: IPB80N06S2-08 IPP80N06S2-08, IPI80N06S2-08 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 7.7 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB80N06S2-08 IPP80N06S2-08, IPI80N06S2-08 PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 SP0002-18830 2N0608 2n0608 SP000218830 i 2n0608 IPI80N06S2-08 IPB80N06S2-08 IPP80N06S2-08 PG-TO263-3-2 marking D58

    2n0608

    Abstract: i 2n0608 Q67060-S4284 ANPS071E SPB80N06S2-08 SPI80N06S2-08 SPP80N06S2-08 smd marking 58a
    Text: SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 OptiMOS =Power-Transistor Product Summary Feature 55 VDS  N-Channel R DS on  Enhancement mode ID 175°C operating temperature P- TO262 -3-1  Avalanche rated V m 8 80 P- TO263 -3-2 A P- TO220 -3-1  dv/dt rated


    Original     		PDF SPI80N06S2-08 SPP80N06S2-08 SPB80N06S2-08 SPP80N06S2-08 Q67060-S4283 Q67060-S4284 2N0608 Q67060-S7430 2n0608 i 2n0608 Q67060-S4284 ANPS071E SPB80N06S2-08 SPI80N06S2-08 smd marking 58a

    2n0608

    Abstract: 6040-H smd marking 58a SPB80N06S2-08 Q67060-S7430 200A 55V ANPS071E SPI80N06S2-08 SPP80N06S2-08 Q67060-S4284
    Text: SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated P- TO262 -3-1 VDS 55 RDS on 8 m ID 80 A P- TO263 -3-2 Type Package Ordering Code


    Original     		PDF SPI80N06S2-08 SPP80N06S2-08 SPB80N06S2-08 SPP80N06S2-08 Q67060-S4283 2N0608 Q67060-S4284 2n0608 6040-H smd marking 58a SPB80N06S2-08 Q67060-S7430 200A 55V ANPS071E SPI80N06S2-08 Q67060-S4284

    2N0608

    Abstract: ANPS071E SPB80N06S2-08 SPI80N06S2-08 SPP80N06S2-08 smd marking 58a SMD marking code 58A
    Text: SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on ID • 175°C operating temperature • Avalanche rated 55 P- TO262 -3-1 V 8 mΩ 80 P- TO263 -3-2 A P- TO220 -3-1


    Original     		PDF SPI80N06S2-08 SPP80N06S2-08 SPB80N06S2-08 SPP80N06S2-08 Q67060-S4283 Q67060-S4284 2N0608 Q67060-S7430 2N0608 ANPS071E SPB80N06S2-08 SPI80N06S2-08 smd marking 58a SMD marking code 58A

    2n0608

    Abstract: smd marking 58a
    Text: SPP80N06S2-08 SPB80N06S2-08 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 8 mΩ ID 80 A • Enhancement mode •=175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 • dv/dt rated Type


    Original     		PDF SPP80N06S2-08 SPB80N06S2-08 P-TO220-3-1 P-TO263-3-2 P-TO220-3-1 Q67040-S4283 Q67040-S4284 2n0608 smd marking 58a

    2n0608

    Abstract: Q67040-S4283 smd marking 58a SPB80N06S2-08 SPP80N06S2-08
    Text: SPP80N06S2-08 SPB80N06S2-08 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel 55 R DS on • Enhancement mode ID •=175°C operating temperature • Avalanche rated V 8 mΩ 80 P-TO263-3-2 A P-TO220-3-1 • dv/dt rated


    Original     		PDF SPP80N06S2-08 SPB80N06S2-08 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4283 P-TO263-3-2 Q67040-S4284 2n0608 Q67040-S4283 smd marking 58a SPB80N06S2-08 SPP80N06S2-08

    2N0608

    Abstract: Q67040-S4284 AS3500 SPB80N06S2-08 SPP80N06S2-08 2N060
    Text: SPP80N06S2-08 SPB80N06S2-08 Preliminary data OptiMOS =Power-Transistor Features Product Summary • N-Channel Drain source voltage VDS 55 V • Drain-source on-state resistance RDS on 8 mΩ Continuous drain current ID 80 A Enhancement mode • Avalanche rated


    Original     		PDF SPP80N06S2-08 SPB80N06S2-08 P-TO220-3-1 Q67040-S4283 2N0608 P-TO263-3-2 Q67040-S4284 2N0608 Q67040-S4284 AS3500 SPB80N06S2-08 SPP80N06S2-08 2N060