h9740
Abstract: B897 T9934 l9735 l9731 L9726 74100 B8948 JESD22-B100 PT 9732
Text: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS October 1998 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT October 1998 TABLE OF CONTENTS Section I: Introduction Section II:
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DU128
PQ132
PK128
723643Z
ASAT-HK/T11567
PN100
70V261Z
H52742
71215Y
ASAT-HK/T11531
h9740
B897
T9934
l9735
l9731
L9726
74100
B8948
JESD22-B100
PT 9732
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h9740
Abstract: k1917 B934 L9726 Y9846 H9817 n9831 l9735 9806 9826 320
Text: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS January 1999 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT January 1999 TABLE OF CONTENTS Section I: Introduction Section II:
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72201X
H54480G
T11747
7280Q
60210D
D00725
P23419G
42V509Z
P23393G
71V124T
h9740
k1917
B934
L9726
Y9846
H9817
n9831
l9735
9806
9826 320
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K2837
Abstract: h9910 pj 899 diode l9845 k1917 B897 74100 ipc 9850 74FST163245 L9726
Text: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS JULY 1999 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT July 1999 TABLE OF CONTENTS Section I: Introduction Section II:
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61245L
63344N
K26795
A17844
A17838
7280Q
D01802
43574K
42646H
K2837
h9910
pj 899 diode
l9845
k1917
B897
74100
ipc 9850
74FST163245
L9726
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h9910
Abstract: 74FST163245 B897 PL84 K2837 9806 h9910 datasheet ipc 9850 pj 899 diode JEDEC-22-A113-A
Text: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS JULY 1999 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT July 1999 TABLE OF CONTENTS Section I: Introduction Section II:
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61245L
63344N
K26795
A17844
A17838
7280Q
D01802
43574K
42646H
h9910
74FST163245
B897
PL84
K2837
9806
h9910 datasheet
ipc 9850
pj 899 diode
JEDEC-22-A113-A
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H9723
Abstract: h9740 L9727 H9703 PJ 966 IV L9718 L9726 IC L9712 K961 L9712
Text: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS July 1998 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT July 1998 TABLE OF CONTENTS Section I: Introduction Section II:
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61543N
K12871L
PK100
71V632Z
2821W
H51143
Y9681
7007Z
ASAT-HK/T11052
7280Q
H9723
h9740
L9727
H9703
PJ 966 IV
L9718
L9726
IC L9712
K961
L9712
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k1917
Abstract: L9726 JESD22-B100 9806 cga 624 Monitor Hyundai Service TSOP 173 g JEDEC-22-A113 K1573 74FST163245
Text: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS April 1999 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT April 1999 TABLE OF CONTENTS Section I: Introduction Section II:
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723612Z
71215Y
72225S
2211W
Y10648
Y10746
Y10662
T11844
61823N
k1917
L9726
JESD22-B100
9806
cga 624
Monitor Hyundai Service
TSOP 173 g
JEDEC-22-A113
K1573
74FST163245
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Untitled
Abstract: No abstract text available
Text: HY5216256 Series -HYUNDAI 256Kx 16-bit Video RAM with 2CAS Introduction Overview The 4megabit Video RAM is an application specific memory device designed for graphics applications. It comprises a 256k x16 DRAM memory array interfaced to a 256 x16 Serial Access Memory SAM , or register.
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HY5216256
256Kx
16-bit
16bits
4b750Ã
1VC01-00-MAY95
525mil
64pin
4b750flÃ
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P55i
Abstract: B0000h-BFFFF
Text: • HYUNDAI HY29F800 Series 1M x 8-bit / 512K x 16-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V 1 10% Read, Program, and Erase - Minimizes syslem-level power requirements • Compatible with JEDEC-Standard Commands - Uses software commands, pinouts, and
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16Kbytes,
HY29F800
16-bit
16-bit)
P-55I,
T-55I,
R-551
P-55E,
T-55E,
P55i
B0000h-BFFFF
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Untitled
Abstract: No abstract text available
Text: »HYUNDAI HYCFL002 Series 2MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFL002 is the Flash memory card consisting of four 5V-only 4Mbit 512Kx8 Rash memory chips in a metal plate housing. Tiie Hyundai Flash memory card is optimized for the application of data and file storage in the
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HYCFL002
x8/x16
512Kx8)
4b750Afl
0D03T4b
1FC08-01-MAR96
4b750flfl
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYCFL001 Series 1MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFL001 is the Flash memory card consisting of two 5V-only 4Mbit 512Kx8 Flash memory chips in a metal plate housing. The Hyundai Flash memory card is optimized for the application of data and file storage in the
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HYCFL001
x8/x16
512Kx8)
01-MAR96
4b750flfl
DDD315S
1FC08-01-MAR96
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Untitled
Abstract: No abstract text available
Text: • HY UNDAI HYCFLF16008 Series _8MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFLF16008 is the Flash memory card consisting of four 5V-only 16Mbit 2Mx8 Flash memory chips in a metal plate housing. The Hyundai Rash memory card is optimized for the application of data and file storage in
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HYCFLF16008
x8/x16
16Mbit
00031flfl
1FC08-01-MAR96
4Li750flfl
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HY29F080 Series 8 M eg ab it 1M x 8 , 5 -v o lt O n ly, Flash M em o ry KEY FEATURES 5-Volt Read, Program, and Erase - Minimizes system-level power requirements High Performance - Access times as low as 55 ns Low Power Consumption - 15 mA typical active read current
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HY29F080
S-128
HY29F080
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Untitled
Abstract: No abstract text available
Text: ‘ H Y U N D A I H Y C F L F 1 6 0 0 4 S e r ie s _ 4MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFLF16004 is the Flash memory card consisting of two 5V-only 16Mbit 2Mx8 Flash memory chips in a metal plate housing. The Hyundai Flash memory card is optimized tor the application of data and file storage in
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x8/x16
HYCFLF16004
16Mbit
4b750flfl
1FC08-01-MAR96
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY29F002 Series 256K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase • - Minimizes system-level power requirements • • • Uses software commands, pinouts, and packages following industry standards for
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HY29F002
C-45I,
T-451,
R-451
P-45E,
C-45E,
T-45E,
R-45E
P-551,
C-551,
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Untitled
Abstract: No abstract text available
Text: - H Y U N D H Y 5 2 1 6 2 5 6 A I S e r ie s 256K X 16-bit Video RAM with 2CAS Introduction O verview The 4megabit Video RAM is an application specific memory device designed for graphics applications. It comprises a 256k x16 DRAM memory array interfaced to a 256 x16 Serial Access Memory SAM , or register.
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16-bit
16bits
asynchronou84
1VC01-00-MAY95
HY5216256
525mil
64pin
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C551
Abstract: HY29F040A P55i
Text: “H Y U N D A I HY29F040A Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • • 5.0 V ± 10% Read, Program , and Erase - Minimizes system-level power requirements High perform ance - 55 ns access tim e Com patible with JEDEC-Standard Comm ands
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HY29F040A
32-Pin
HY29F040A
C551
P55i
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Untitled
Abstract: No abstract text available
Text: “H Y U N D A I HY29F080 Series 1M x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements High performance - 55 ns access time Internal Programming Algorithms - Automatically programs and verifies data at a
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HY29F080
G-70I,
T-70I,
R-70I
G-70E,
T-70E,
R-70E
G-90I,
T-90I,
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Untitled
Abstract: No abstract text available
Text: “H Y U N D A I HY29F040 Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 120 ns access time • Compatible with JEDEC-Standard Commands
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HY29F040
120ns
P-121,
T-121,
R-121
P-12E,
T-12E,
R-12E
P-151,
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Untitled
Abstract: No abstract text available
Text: HYU NDA I HV29F08° 8 M eg ab it 1M x 8 , 5 V o lt-o n ly , Flash M em o ry KEY FEATURES 5 Volt Read, Program, and Erase - Minimizes system-level power requirements High Performance - Access times as fast as 55 ns Low Power Consumption - 15 mA typical active read current
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HY29F080
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Untitled
Abstract: No abstract text available
Text: «HYUNDAI HY29F040 Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • • 5.0 V ± 10% Read, Program , and Erase - Minimizes system-level power requirements High perform ance - 120 ns access tim e Compatible with JEDEC-Standard Comm ands
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HY29F040
32-Pin
P-121,
T-121,
R-121
P-12E,
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Z134
Abstract: No abstract text available
Text: “H Y U N D A I HY29F080 Series 1M x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEYFEATURES • S.O V 10% Read, Program, and Erase - Minimizes system-ievel power requirements • High performance - 55 ns access time • Internal Programming Algorithms
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HY29F080
G-55I,
T-55I,
R-55I
G-55E,
T-55E,
R-55E
G-70I,
T-701,
Z134
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY29F040A Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEYFEATURES • 5.0 V * 10% Read, Program, and Erase - • • • Uses software commands, pinouts, and packages following industry standards for single power supply Flash memory
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HY29F040A
R-551
P-55E,
T-55E,
R-55E
P-701,
C-701,
T-701,
R-701
P-70E,
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E-1330
Abstract: epson e-1330 HG19501NY-EWS e1330 epson e1330 Hyundai LCD 256x128 lcd hyundai topway 128 AP12
Text: TOPWAY SPECIFICATIONS P AS SIV E MATRIX LCD MODU LE 1 92 X 1 28 D O T S > EL B A C K L I G H T LMS 1 9 5- F REV. 2 June, 28,2001 Tel: 0755-3264347, 3264316 Fax: 0755-3354422, 6678735 E-mail: topwav@szonline.net twvz@szonline. net http://www.topwavsz.com
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CONFIRM19501NY-EWS
14-C1
13XP2
HG19501NY-EWS
E-1330
epson e-1330
HG19501NY-EWS
e1330
epson e1330
Hyundai LCD
256x128
lcd hyundai
topway 128
AP12
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Untitled
Abstract: No abstract text available
Text: >43 Y l l N D A I HY29F080 Series 1M x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 55 ns access time Internal Programming Algorithms
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HY29F080
44-Pin
40-Pin
G0071b5
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