HYPERABRUPT
Abstract: No abstract text available
Text: Abrupt and hyperabrupt junctions The abruptness of a junction refers to the rate of change n along the diode's C-V curve, i.e. the junction ca p a c ita n c e versus the applied voltage. If n ~ 0,5, the junction is a b r u p t; if n > 0,5, the junction is hyperabrupt.
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Q62702B
Abstract: marking 34 diode
Text: SIEMENS BBY 51-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation • For VCO’s in mobile communications equipment Type Marking Ordering Code Pin Configuration
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1-02W
Q62702-B0858
SCD-80
Q62702B
marking 34 diode
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Q62702B
Abstract: siemens diode
Text: SIEMENS BBY 55-02W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation for V C O ’s in mobile communications equipment • Very low capacitance spread
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5-02W
Q62702-B0913
SCD-80
Q62702B
siemens diode
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GVD30503-001
Abstract: No abstract text available
Text: Preliminary Data - January 1999 GVD30500 SERIES SPRAGUE-GOODMAN ELECTRONICS. INC. WIDEBAND HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 25 V min Maximum reverse leakage current (at -20 V) at 25“C: 0.05 pA DC
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GVD30500
GVD30501-004
GVD30502-004
GVD30503-004
GVD30504-004
GVD30501-001
GVD30502-001
GVD30503-001
GVD30504-001
OT-23
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silicon epitaxial mesa diode
Abstract: GVD1404-001
Text: Preliminary Data - January 1999 GVD1400 SERIES SPRAfilli-GOODMAN ELECTRONICS, INC. SUPER HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 12 V min Maximum reverse leakage current (at -10 V) at 25°C: 0.05 pA DC
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GVD1400
GVD1401-004
GVD1404-004
GVD1401-001
GVD1404-001
OT-23
silicon epitaxial mesa diode
GVD1404-001
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Untitled
Abstract: No abstract text available
Text: Preliminary Data - January 1999 GVD30600 SERIES SPRAGIH-GOODMAN ELECTRONICS, INC. W IDEBAND HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS « Mesa Epitaxial Silicon Construction • Silicon Dioxide Passivated > Superior Wide Range Linear Characteristics
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GVD30600
GVD30601-004
GVD30602-004
GVD30603-004
GVD30601-001
GVD30602-001
GVD30603-001
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SMV121x Series: Hyperabrupt Junction Tuning Varactors Applications • Low tuning voltage VCOs High-volume commercial systems Features High capacitance ratio: C1V/C4V = 5 typical Packages rated MSL1, 260 °C per JEDEC J-STD-020 Description
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SMV121x
J-STD-020
2000tside
200057H
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varactor diode
Abstract: No abstract text available
Text: Hyperabrupt Varactor Diode Outline Drawing Features: • ■ ■ VHF to UHF Operation Linear Octave Tuning from 3 to 20 volts Surface Mountable SOT-23 Package Outline - Single diode SMV1200-04A - Two diodes back to back (SMV1200-04B) High Reliability ■
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OT-23
SMV1200-04A)
SMV1200-04B)
SMV1200-04
100mA
250mW
50MHz
varactor diode
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DKV3803-55
Abstract: No abstract text available
Text: Silicon Hyperabrupt Tuning Diodes DKV6550 Series Features • ■ Octave Frequency Tuning from 0 to 10 Volts ±1.5% Linearity for a 1.7:1 Tuning Ratio without Compensation Network Types DKV6550 CKV2010 DKV3801 DKV3802 DKV3803 DKV3804 Description Alpha microwave hyperabrupt diodes are designed
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DKV6550
CKV2010
DKV3801
DKV3802
DKV3803
DKV3804
20-volt
DKV3803-55
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diode oat
Abstract: No abstract text available
Text: Hyperabrupt Varactor Diode Outline Drawing Features: • ■ ■ ■ ■ V H F and UHF Operation Low Series Resistance Surface mountable S O T-23 Package - Single diode SM V1204-60A - Two diodes back to back (S M V 1204-60B ) Linear Tuning from 0 to 6 volts. Ideal
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V1204-60A
1204-60B
J0062
100mA
50MHz
diode oat
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VR1j
Abstract: SMV1200
Text: Varactor Diodes Hyperabrupt Varactors for General Wide Band Applications Single and Common Cathode Reverse Breakdown Voltage, V B (10 |aA): Reverse Leakage Current, lR (16V): 20V Minimum 50 nA Maximum r Part Number SMV1200-04 min max 10.5 12.5 Q VR1j
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SMV1200-04
SMV1200-104
SMV1200-07
SMV1200-107
SMV1204-04
SMV1204-104
SMV1204-05
SMV1204-105
SMV1202-03
SMV1202-08
VR1j
SMV1200
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smv1204-12
Abstract: No abstract text available
Text: Hyperabrupt Varactor Diode Outline Drawing: Features: • V H F Tuning ■ Octave tuning from 0 to 6 volts. Ideal in VXC O , TC X O and other frequency control applications using limited bias range. ■ Surface mountable S O T-23 Package ■ Competitively priced, readily available
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100mA
10jxA)
100nA
SMV1204-11
SMV1204-12
SMV12ngs
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SMVA1470-004LF: Hyperabrupt Junction Tuning Varactor Automotive Applications • Low-noise VCOs and VCXOs in wireless systems Infotainment Navigation Telematics Garage door openers Wireless control systems Description Features
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SMVA1470-004LF:
AEC-Q101
ISO/TS16949
OT-23
J-STD-020)
SMVA1470-004LF
03206A
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Untitled
Abstract: No abstract text available
Text: SIEMENS BBY 58-04W . BBY 58-06W Silicon Tunig Diodes Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • For low frequency control elements
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8-04W
8-06W
8-05W
EHA07006
EHA07004
EHA07005
Q62702-
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SMV2019-108
Abstract: SMV1206-108 SMV1206 SMV1405 SMV2019
Text: DATA SHEET Silicon Tuning Varactors in Hermetic Surface Mount Package Applications V COs l V oltage tuned filters l Features l l l l l l l S ilicon abrupt and hyperabrupt devices available H ermetic ceramic package, 1.83 x 1.43 x 1.0 mm
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J-STD-020
SMV2019-108
SMV1206-108
SMV1206
SMV1405
SMV2019
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AF3 SOT23
Abstract: varactors SMV1247 SMV1247-074 SMV1247-079LF SMV1255 SMV1253-079LF
Text: DATA SHEET SMV1247-SMV1255 Series: Hyperabrupt Junction Tuning Varactors Applications x Low tuning voltage VCOs x High-volume commercial systems Features x High capacitance ratio: C0.3V/C4.7V = 12 typical x Packages rated MSL1, 260 °C per JEDEC J-STD-020
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SMV1247-SMV1255
J-STD-020
SMV1247
SMV1255
200061F
AF3 SOT23
varactors
SMV1247-074
SMV1247-079LF
SMV1253-079LF
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coaxial resonator, skyworks
Abstract: SMV2019 SMV2019-000 SMV2019-240 SMV2020-000 SMV2020-240 SMV2021-000 SMV2022-000 SMV2023 SMV2023-000
Text: data sheet SMV2019 to SMV2023: Silicon Hyperabrupt Junction Varactors, Packaged and Bondable Planar Chips Applications l Voltage controlled oscillators Features High Q for low loss resonators Low leakage current l High tuning ratio for wideband VCOs l SPICE model parameters
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SMV2019
SMV2023:
coaxial resonator, skyworks
SMV2019-000
SMV2019-240
SMV2020-000
SMV2020-240
SMV2021-000
SMV2022-000
SMV2023
SMV2023-000
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SMV1145-011LF
Abstract: SMV1145-079LF marking GU
Text: DATA SHEET SMV114x Series: Hyperabrupt Junction Tuning Varactors Applications x High volume commercial systems Features x Frequency linear design x Low series resistance x Packages rated MSL1, 260 °C per JEDEC J-STD-020 Skyworks offers lead Pb -free, RoHS (Restriction of
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SMV114x
J-STD-020
200132E
SMV1145-011LF
SMV1145-079LF
marking GU
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SMV1265
Abstract: CT26 S1619 SMV1265-011LF
Text: DATA SHEET SMV1265-011LF Hyperabrupt Junction Tuning Varactor Applications x Wideband RF and microwave VCOs x Analog phase shifters x Digital TV tuners Features x High tuning ratio x Low series resistance x Designed for high volume, low-cost applications x Small footprint SOD-323 1.60 x 1.15 mm package (MSL1,
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SMV1265-011LF
OD-323
J-STD-020)
OD-323
200063F
SMV1265
CT26
S1619
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SMV1139
Abstract: S1672 SMV1129 SMV1129-079LF
Text: DATA SHEET SMV1129 and SMV1139 Hyperabrupt Junction Tuning Varactors Applications x Low phase noise VCOs x High-Q tuning elements in wireless system LOs Features x High-Q x Low series resistance for low phase noise x Packages rated MSL1, 260 °C per JEDEC J-STD-020
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SMV1129
SMV1139
J-STD-020
SMV1129-079LF
SMV1139-011LF
200132E
S1672
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MSV1201-97-001
Abstract: MSV1204-11-001 MSV1204-12-001 MSV1204-13-001 MSV1204-14-001 MSV1204-15-001 MSV1204-22-001 MSV1204-23-001 MSV1204-24-001 MSV1204-25-001
Text: Commercial Diodes Commercial Diodes: MSV-1200 Series Hyperabrupt Varactors Single and Common Cathode Oscillator Applications VCXOs and TCXOs Description The MicroMetrics Hyperabrupt Varactors come in a wide variety of capacitance values and high capacitance ratios. These devices are available in single junction, common anode
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MSV-1200
MSV1204-22-001
MSV1204-23-001
MSV1204-24-001
MSV1204-25-001
MSV1201-97-001
MSV1204-11-001
MSV1204-12-001
MSV1204-13-001
MSV1204-14-001
MSV1204-15-001
MSV1204-22-001
MSV1204-23-001
MSV1204-24-001
MSV1204-25-001
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Untitled
Abstract: No abstract text available
Text: 1N5142 asi TUNING VARACTOR DIODE DESCRIPTION: The 1N5142 is a Silicon HyperAbrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA -nrB MAXIMUM RATINGS - 250 mA If Vr 60 V P diss 400 mW @ TA = 25 °C Tj -65 °C t o +175 °C T stg -65 °C to +200 °C
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1N5142
1N5142
D0-204AA
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MGV-100-20
Abstract: MGV-125-20 MGV-125-22 MGV-125-25 MGV-100-21 MGV-075-10 MCE Metelics MGV-100-20 MGV-100-23 MA46471 MA46472
Text: GaAs Hyperabrupt Tuning Varactors FEATURES PACKAGE STYLES • Constant Gamma 0.75, 1.00, or 1.25 over a wide tuning ratio • High Q • Linear Frequency Tuning • Stable performance in High Reliability environment • Available in Packaged and Chip Form
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MGV-075
MGV-100
MGV-125
MGV-100-20
MGV-125-20
MGV-125-22
MGV-125-25
MGV-100-21
MGV-075-10
MCE Metelics MGV-100-20
MGV-100-23
MA46471
MA46472
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KV2101
Abstract: KV2101A
Text: KV2101A SILICON HYPERABRUPT TUNING VARACTOR PACKAGE STYLE DO-7 DESCRIPTION: The ASI KV2101A is a Silicon Hyperabrupt Tuning Varactor Diode Designed for UHF Applications up to 800 MHz.The Cathode is Indicated by a Color Band. MAXIMUM RATINGS IF 40 mA VR 22 V
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KV2101A
KV2101A
KV2101
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