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    HY5117404B

    Abstract: No abstract text available
    Text: HYM536A414B M-Series 4Mx36 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536A414B M-Series is a 4Mx36-bit Extended Data Out mode CMOS DRAM module consisting of nine HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF


    Original     		PDF HYM536A414B 4Mx36 4Mx36-bit HY5117404B HYM536A414BM HYM536A414BMG 72-Pin

    Untitled

    Abstract: No abstract text available
    Text: »HYUNDAI HYM536A414B M-Series 4M X 36-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM536A414B is a 4 M x 36-bit EDO mode CMOS DRAM module consisting of nineHV5117404B in 24/26 pin SOJ on a 72 pm glass-epoxy printed circuit board. O.inF and O.OlnF decoupling capacitor is mounted for each


    OCR Scan     		PDF HYM536A414B 36-bit nineHV5117404B HYM536A414BM/BSLM HYM536A414BMG/BSLMG A0-A10) DQ0-DQ35) 1CE16-10-APR96

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM536A414B M-Series 4M X 36-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HVM536A414B is a 4M x 36-bit EDO mode CMOS DRAM module consisting of nine HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 nF decoupling capacitor is mounted for each


    OCR Scan     		PDF HYM536A414B 36-bit HVM536A414B HY5117404B HYM536A414BM/BSLM HYM536A414BMG/BSLMG 200ft 171MN. 60W-3S)