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    HYB39S256400 Price and Stock

    Infineon Technologies AG HYB39S256400DT-7

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    Bristol Electronics HYB39S256400DT-7 1,298
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    HYB39S256400DT-7 764
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    Siemens HYB39S256400T-7.5

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    Bristol Electronics HYB39S256400T-7.5 124
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    Infineon Technologies AG HYB39S256400CT-7.5

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    Bristol Electronics HYB39S256400CT-7.5 34 1
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    Quest Components HYB39S256400CT-7.5 53
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    HYB39S256400CT-7.5 27
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    Qimonda AG HYB39S256400FF-7

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    Infineon Technologies AG HYB39S256400AT-7.5

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    Bristol Electronics HYB39S256400AT-7.5 14
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    HYB39S256400 Datasheets (40)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HYB39S256400 Siemens 256 MBit Synchronous DRAM Original PDF
    HYB39S256400-800-160CT(L) Infineon Technologies HYB39S256400-800-160CT(L) Original PDF
    HYB 39S256400CT-7.5 Infineon Technologies 256 MBit Synchronous DRAM Original PDF
    HYB39S256400CT-7.5 Infineon Technologies PC133 SDRAM 256M 64M x 4 Original PDF
    HYB 39S256400CT-8 Infineon Technologies 256 MBit Synchronous DRAM Original PDF
    HYB39S256400CT-8 Infineon Technologies PC100 CL2 SDRAM 256M 64M x 4 Original PDF
    HYB39S256400CT-8A Infineon Technologies PC100 CL3 SDRAM 256M 64M x 4 Original PDF
    HYB39S256400CTL Siemens 256MBit Synchronous DRAM Original PDF
    HYB39S256400CTL-7.5 Siemens 256 MBit Synchronous DRAM Original PDF
    HYB39S256400CTL-8A Siemens 256 MBit Synchronous DRAM Original PDF
    HYB39S256400D Infineon Technologies 256-MBit Synchronous DRAM Original PDF
    HYB39S256400DC Siemens 256MBit Synchronous DRAM Original PDF
    HYB39S256400DC-6 Infineon Technologies 256 MBit Synchronous DRAM Original PDF
    HYB39S256400DC-7 Infineon Technologies 256 MBit Synchronous DRAM Original PDF
    HYB39S256400DC-75 Infineon Technologies 256 MBit Synchronous DRAM Original PDF
    HYB39S256400DC-8 Infineon Technologies 256 MBit Synchronous DRAM Original PDF
    HYB39S256400DCL Siemens 256MBit Synchronous DRAM Original PDF
    HYB39S256400DCL-6 Infineon Technologies 256-MBit Synchronous DRAM Original PDF
    HYB39S256400DCL-7 Infineon Technologies 256 MBit Synchronous DRAM Original PDF
    HYB39S256400DCL-75 Infineon Technologies 256 MBit Synchronous DRAM Original PDF

    HYB39S256400 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    39S256160DT-7

    Abstract: HYB39S256400D PC133-222-520 PC166
    Text: Data Sheet, Rev. 1.02, Feb. 2004 HYB39S256400D[C/T] L HYB39S256800D[C/T](L) HYB39S256160D[C/T](L) 256-MBit Synchronous DRAM SDRAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2004-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


    Original     		PDF HYB39S256400D HYB39S256800D HYB39S256160D 256-MBit P-TSOPII-54 GPX09039 10072003-13LE-FGQQ HYB39S256 TFBGA-54 39S256160DT-7 PC133-222-520 PC166

    39S256160T

    Abstract: PC100-322-620 smd CAY PC100-322 P-TSOPII-54
    Text: HYB39S256400/800/160T 256MBit Synchronous DRAM 256 MBit Synchronous DRAM Preliminary Information • High Performance: -8 -8A -8B Units fCK 125 125 100 MHz tCK3 8 8 10 ns tAC3 6 6 6 ns tCK2 10 12 15 ns tAC2 6 6 7 ns • Fully Synchronous to Positive Clock Edge


    Original     		PDF HYB39S256400/800/160T 256MBit P-TSOPII-54 400mil PC100 3-2T10 HYB39S256400/800/160AT 39S256160T PC100-322-620 smd CAY PC100-322

    39S256160DT-7

    Abstract: HYB 39S256160DT-7.5 PC100-222 PC133-222 P-TSOPII-54 P-TSOP-54-2
    Text: HYB39S256400/800/160DT L /DC(L) 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -6 -7 -7.5 -8 Units • Data Mask for Read / Write control (x4, x8) • Data Mask for byte control (x16) • Auto Refresh (CBR) and Self Refresh fCK 166


    Original     		PDF HYB39S256400/800/160DT 256MBit P-TSOPII-54 400mil P-TSOPII-54 GPX09039 TFBGA-54 39S256160DT-7 HYB 39S256160DT-7.5 PC100-222 PC133-222 P-TSOP-54-2

    PC100-322-620

    Abstract: 39S256 PC133 registered reference design HYB 39S256400CT-7.5 PC-100-322-620
    Text: HYB39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 -8A Units fCK 133 125 125 MHz tCK3 7.5 8 8 ns tAC3 5.4 6 6 ns tCK2 10 10 12 ns tAC2 6 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature


    Original     		PDF HYB39S256400/800/160CT 256MBit P-TSOPII-54 400mil PC133 PC100 SPT03933 PC100-322-620 39S256 PC133 registered reference design HYB 39S256400CT-7.5 PC-100-322-620

    PC133 registered reference design

    Abstract: No abstract text available
    Text: HYB39S256400/800/160DT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM Preliminary Datasheet (Rev. 7/01) • High Performance: -6 -7 -7.5 -8 Units fCK 166 143 133 125 MHz tCK3 6 7 7.5 8 ns tAC3 5 5.4 5.4 6 ns tCK2 7.5 7.5 10 10 ns tAC2 5.4 5.4 6 6 ns


    Original     		PDF HYB39S256400/800/160DT 256MBit P-TSOPII-54 400mil PC166 PC133 PC133 registered reference design

    P-TSOPII-54

    Abstract: PC133 registered reference design
    Text: HYB39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 Units fCK 133 125 MHz tCK3 7.5 8 ns tAC3 5.4 6 ns tCK2 10 10 ns tAC2 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature


    Original     		PDF HYB39S256400/800/160CT 256MBit P-TSOPII-54 400mil PC133 PC100 PC133 registered reference design

    PC100-322-620

    Abstract: Schneider NS 800 PC100-322 smd transistor marking ba smd transistor marking BA1 tcs Schneider P-TSOPII-54 PC133 registered reference design
    Text: HYB39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 -8A Units fCK 133 125 125 MHz tCK3 7.5 8 8 ns tAC3 5.4 6 6 ns tCK2 10 10 12 ns tAC2 6 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature


    Original     		PDF HYB39S256400/800/160CT 256MBit P-TSOPII-54 400mil PC133 PC100 SPT03910 SPT03923 PC100-322-620 Schneider NS 800 PC100-322 smd transistor marking ba smd transistor marking BA1 tcs Schneider PC133 registered reference design

    PC100-322-620

    Abstract: P-TSOPII-54 PC133 registered reference design
    Text: HYB39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 -8A Units fCK 133 125 125 MHz tCK3 7.5 8 8 ns tAC3 5.4 6 6 ns tCK2 10 10 12 ns tAC2 6 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature


    Original     		PDF HYB39S256400/800/160CT 256MBit P-TSOPII-54 400mil PC133 PC100 PC100-322-620 PC133 registered reference design

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Rev. 1.30, Feb. 2006 HYB39S256400D[C/T] L HYB39S256800D[C/T](L) HYB39S256160D[C/T](L) 256-MBit Synchronous DRAM SDRAM Memory Products Edition 2006-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany Infineon Technologies AG 2006.


    Original     		PDF HYB39S256400D HYB39S256800D HYB39S256160D 256-MBit P-TSOPII-54-1 10072003-13LE-FGQQ HYB39S256 P-TFBGA-54-8

    MARKING CAW

    Abstract: P-TSOPII-54
    Text: HYB39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 -8A Units fCK 133 125 125 MHz tCK3 7.5 8 8 ns tAC3 5.4 6 6 ns tCK2 10 10 12 ns tAC2 6 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature


    Original     		PDF HYB39S256400/800/160CT 256MBit P-TSOPII-54 400mil PC133 PC100 SPT03933 MARKING CAW

    TC5118160

    Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
    Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256


    Original     		PDF 256Kx4 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256 HY531000 HY534256 MT4C1024 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260

    HYB39S256400FE-7

    Abstract: HYI39S256160FE7 HYB39S256160FT-7 hyb39s256800fe HYB39S256800FE-7 HYB39S256400FF-7 HYB39S256407FE HYB39S256160 HYB39S256160FE HYI39S256160
    Text: September 2007 HY[B/I]39S256[40/80/16]0FT L HY[B/I]39S256[40/80/16]0FE(L) HYB39S256[40/80/16]0FF(L) HYB39S 256407 F E 256-MBit Synchronous DRAM SDRAM Internet Data Sheet Rev. 1.42 Internet Data Sheet HY[B/I]39S256[40/80/16][0/7]F[E/T/F](L) 256-MBit Synchronous DRAM


    Original     		PDF 39S256 HYB39S256 HYB39S 256-MBit HYB39S256400FE-7 HYI39S256160FE7 HYB39S256160FT-7 hyb39s256800fe HYB39S256800FE-7 HYB39S256400FF-7 HYB39S256407FE HYB39S256160 HYB39S256160FE HYI39S256160

    PC100-322-620

    Abstract: PC-100-322-620 PC133-333-520 PC100-222-620 P-TSOPII-54 39S256400AT-8A SMD MARKING CODE t15
    Text: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM Preliminary Datasheet • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125


    Original     		PDF 39S256400/800/160AT 256-MBit SPT03933 PC100-322-620 PC-100-322-620 PC133-333-520 PC100-222-620 P-TSOPII-54 39S256400AT-8A SMD MARKING CODE t15

    PC133-222-520

    Abstract: PC133-222 HYB39S256160FE-7 HYB39S256160FT-7 hyb39s256800fe P-TSOPII-54 HYB39S256160FE HYB39S256800FE-7 00FF TSOP-II-54
    Text: September 2006 HYB39S256[4/8/16]00FT L HYB39S256[4/8/16]00FE(L) HYB39S256[4/8/16]00FF(L) 256-MBit Synchronous DRAM SDRAM Internet Data Sheet Rev. 1.21 Internet Data Sheet HYB39S256[400/800/160]F[E/T/F](L) 256-MBit Synchronous DRAM HYB39S256[4/8/16]00FT(L), HYB39S256[4/8/16]00FE(L), HYB39S256[4/8/16]00FF(L)


    Original     		PDF HYB39S256 256-MBit PC133-222-520 PC133-222 HYB39S256160FE-7 HYB39S256160FT-7 hyb39s256800fe P-TSOPII-54 HYB39S256160FE HYB39S256800FE-7 00FF TSOP-II-54

    HYB39S256160FE

    Abstract: HYB39S256160FE-7
    Text: March 2007 HY[B/I]39S256[40/80/16]0FT L HY[B/I]39S256[40/80/16]0FE(L) HYB39S256[40/80/16]0FF(L) HYB39S 256407 F E 256-MBit Synchronous DRAM SDRAM Internet Data Sheet Rev. 1.3 Internet Data Sheet HY[B/I]39S256[40/80/16][0/7]F[E/T/F](L) 256-MBit Synchronous DRAM


    Original     		PDF 39S256 HYB39S256 HYB39S 256-MBit HYB39S256160FE HYB39S256160FE-7

    Untitled

    Abstract: No abstract text available
    Text: HYS 72Vx3xxGR-8 PC100 Registered SDRAM-Modules Preliminary Datasheet 3.3 V 168-pin Registered SDRAM Modules 256 MB, 512 MB & 1 GB Densities • Programmable CAS Latency, Burst Length, and Wrap Sequence Sequential & Interleave • 168-pin JEDEC Standard, Registered 8 Byte


    Original     		PDF 72Vx3xxGR-8 PC100 168-pin 100MHz TSOPII-54 TSOP54 HYS72V64300GR-8-C2 64Mx72 C1W106112256

    512m pc133 SDRAM DIMM

    Abstract: TSOP 66 Package TSOP 54 Package DIMM DDR400 PC3200 1 gb ddr2 ram DDR400 infineon HYF33DS512800ATC 16M x 16 DDR TSOP-66 P-TSOPI-48 infineon twinflash
    Text: Product Information 2004 MEMORY SPECTRUM w w w. i n f i n e o n . c o m / m e m o r y w w w. i n f i n e o n . c o m / m e m o r y / f l a s h Never stop thinking. Introduction A P R I L 2 0 0 4 . This edition of Memory Spectrum has been developed to enable you to easily view the entire range of Infineon’s memory products.


    Original     		PDF DDR400 PC3200) B166-H8399-X-X-7600 512m pc133 SDRAM DIMM TSOP 66 Package TSOP 54 Package DIMM DDR400 PC3200 1 gb ddr2 ram DDR400 infineon HYF33DS512800ATC 16M x 16 DDR TSOP-66 P-TSOPI-48 infineon twinflash

    q1257

    Abstract: Q1129 Q4331 TSOP66 Q4311 tsop 4021 tsop ddr2 ram DDR RAM 512M DRAM spectrum infineon TSOP-66
    Text: 2002791-D-RAM–hoch17 11.09.2003 15:07 Uhr Seite 1 Product Information 2003 / 2004 DRAM SPECTRUM www.infineon.com Never stop thinking. 2002791-D-RAM–hoch17 11.09.2003 15:07 Uhr Seite 2 Introduction September 2003. This edition of the DRAM Spectrum has been developed


    Original     		PDF 2002791-D-RAM hoch17 DDR400 PC3200) B112-H6731-G10-X-7600 q1257 Q1129 Q4331 TSOP66 Q4311 tsop 4021 tsop ddr2 ram DDR RAM 512M DRAM spectrum infineon TSOP-66

    tube az1

    Abstract: smd CAY smd marking T22 smd transistor at t21 PC100-322-620 MARKING AX5 by1 SMD marking RBY transistor smd marking mx transistor SMD t15
    Text: HYB 39S256400/800/160T 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8 10


    Original     		PDF 39S256400/800/160T 256-MBit SPT03933 tube az1 smd CAY smd marking T22 smd transistor at t21 PC100-322-620 MARKING AX5 by1 SMD marking RBY transistor smd marking mx transistor SMD t15

    PC100-222-620

    Abstract: PC133-333-520 P-TSOPII-54 pc100-322-620 SMD MARKING CODE M3
    Text: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8


    Original     		PDF 39S256400/800/160AT 256-MBit SPT03933 PC100-222-620 PC133-333-520 P-TSOPII-54 pc100-322-620 SMD MARKING CODE M3

    Untitled

    Abstract: No abstract text available
    Text: HYB39S256400/800/160T 256MBit Synchronous DRAM SIEMENS 256 MBit Synchronous DRAM Preliminary Information • High Performance: Multiple Burst Operation -8 -8B -10 Units fCK 125 100 100 MHz tCK3 8 10 10 ns tAC3 6 6 7 ns Automatic Command and Read with Single Write


    OCR Scan     		PDF HYB39S256400/800/160T 256MBit

    39S256160T

    Abstract: PC100-333-620 IT191 s4 marking code siemens SMD MARKING CODE A12 smd marking KH P-TSOPII-54
    Text: H Y B 39S 25 640 0/8 00/1 60 T 256M B it S ynch ro n o u s DRAM S IE M E N S 2 5 6 M B it S y n c h ro n o u s D R A M P re lim in a ry In fo rm a tio n • High Perform ance: Multiple Burst Operation -8 -8B -10 Units fC K 125 100 100 M Hz tC K 3 8 10 10 ns


    OCR Scan     		PDF HYB39S256400/800/160T 256MBit HYB39S256400/800/160AT 39S256160T PC100-333-620 IT191 s4 marking code siemens SMD MARKING CODE A12 smd marking KH P-TSOPII-54

    Untitled

    Abstract: No abstract text available
    Text: # H YB39S256400/800/160T 256MBit Synchronous DRAM In fin eon 256 MBit Synchronous DRAM Preliminary Information • High Performance: Multiple Burst Operation -8 -8A -8B Units fC K 125 125 100 M Hz tC K 3 8 8 10 ns tA C 3 6 6 6 ns tC K 2 10 12 15 ns tA C 2


    OCR Scan     		PDF YB39S256400/800/160T 256MBit

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 256 MBit Synchronous DRAM HYB 39S256400/800/160T Preliminary Information • High Performance: Multiple Burst Read with Single W rite Operation -8 -8B -10 Units 125 100 100 MHz fCK3 8 10 10 ns Data M ask for Read/W rite control fAC3 6 6 7 ns Data M ask for byte control


    OCR Scan     		PDF 39S256400/800/160T 0235b05 39S256400/80Q/160AT A53SbDS D1113G0