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    d2311

    Abstract: D5555
    Text: ’H Y U N D A I ” Y HY52B4 DD-I Series 1 51 ZK x B-bit CM DS SRAM PRELIM INARY DESDHIPTION The HYB2B400-I is a high-speed, low pow er and 524,288 x B-bits CMOS static RAM Fabricated using Hyundai's high perform ance twin tub CMOS process technology. This high reliability process cuuplad with innovative circuit


    OCR Scan     		PDF HY52B4 HYB2B400-I HY52B40D-I HY62B40D-I tem064 45dBfl D42541 D7B51 1DED2-11-MAYB4 HY62B400-I d2311 D5555

    sob 214

    Abstract: No abstract text available
    Text: "HYUNDAI HY52B4DD Series V- 5 1 2 K n B-bit CM DS SRAM PHEUMINAHY DESCRIPTION The HYB2B40D is a high-speed, low pow er and 524.2SB x 9-bits CMDS static RAM fabricated using Hyundai's high perform ance tw in tub CMOS pro le s s technology. This high reliability process coupled w ith innovative circuit


    OCR Scan     		PDF HY52B4DD HYB2B40D HYB2B400 HY52B40G 1DED1-11-MAYM HY52B400P HYB204OOLP HYB2B400LLP HYB2B400G sob 214