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    HY628400ALR2 Search Results

    HY628400ALR2 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY628400ALR2 Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALR2-E Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALR2-I Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF

    HY628400ALR2 Datasheets Context Search

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    HY628400ALLG-55

    Abstract: VDR 0047 HY628400ALG-55 hy628400allg HY628400ALLG-I
    Text: HY628400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 5.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 04 Revision History Insert Jul.06.2000 Final 05 Revised - Change Iccdr Value : 15uA => 20uA Aug.04.2000 Final 06 Marking Information Add


    Original     		PDF HY628400A 512Kx8bit HY628400A HY628400ALLG-55 VDR 0047 HY628400ALG-55 hy628400allg HY628400ALLG-I

    HY628400A

    Abstract: HY628400ALG HY628400ALLG HY628400ALLR2 HY628400ALLT2 HY628400ALR2 HY628400ALT2
    Text: HY628400A Series 512Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY628400A is a high-speed, low power and 4M bits CMOS SRAM organized as 524,288 words by 8 bits. The HY628400A uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and


    Original     		PDF HY628400A 512Kx8bit HY628400A 0/Jan99 32pin 525mil HY628400ALG HY628400ALLG HY628400ALLR2 HY628400ALLT2 HY628400ALR2 HY628400ALT2

    Untitled

    Abstract: No abstract text available
    Text: HY628400A Series 512Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY628400A is a high-speed, low power and 4M bits CMOS SRAM organized as 512K words by 8 bits. The HY628400A uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and low power


    Original     		PDF HY628400A 512Kx8bit 32pin 525mil