Untitled
Abstract: No abstract text available
Text: HY57V56420H L T 4 Banks x 16M x 4Bit Synchronous DRAM DESCRIPTION The HY57V56420H is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420H is organized as 4banks of 16,777,216x4.
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HY57V56420H
456bit
216x4.
400mil
54pin
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Untitled
Abstract: No abstract text available
Text: HY57V56420H L T 4 Banks x 16M x 4Bit Synchronous DRAM DESCRIPTION The HY57V56420H is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420H is organized as 4banks of 16,777,216x4.
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Original
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PDF
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HY57V56420H
456bit
216x4.
400mil
54pin
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Untitled
Abstract: No abstract text available
Text: HY57V56420H L T 4 Banks x 16M x 4Bit Synchronous DRAM DESCRIPTION The HY57V56420H is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420H is organized as 4banks of 16,777,216x4.
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Original
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PDF
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HY57V56420H
456bit
216x4.
400mil
54pin
|
Untitled
Abstract: No abstract text available
Text: HY57V56420H 4 Banks x 16M x 4Bit Synchronous DRAM Preliminary DESCRIPTION The Hyundai HY57V56420H is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420H is organized as 4banks of 16,777,216x4.
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Original
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PDF
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HY57V56420H
HY57V56420H
456bit
216x4.
400mil
54pin
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Untitled
Abstract: No abstract text available
Text: HY57V56420HT 64Mx4-bit, 8KRef., 4Banks, 3.3V DESCRIPTION T h e H Y 5 7 V 5 6 4 2 0 H is a 2 6 8 ,4 3 5 ,4 5 6 b it C M O S S y n c h ro n o u s D R A M , id e a lly s u ite d f o r th e m a in m e m o ry a p p lic a tio n s w h ic h re q u ire la rg e m e m o ry d e n s ity a n d h ig h b a n d w id th . H Y 5 7 V 5 6 4 2 0 H is o rg a n iz e d a s 4 b a n k s o f 1 6 ,7 7 7 ,2 1 6 x 4 .
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HY57V56420HT
64Mx4-bit,
400mil
54pin
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1gb pc133 SDRAM DIMM 144pin
Abstract: 54-PIN PC100 gm72v66841
Text: 2 . PRODUCT QUICK REFERENCE PRODUCT QUICK REFERENCE HY XX X XX XX X X X X X X - xx x .L HYNIX MEMORY : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSITY & REFRESH 64M 4K Refresh 64M 8K Refresh 128M 4K Refresh 256M 8K Refresh 64 65 28 56 12 512M 8K Refresh
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200MHz
183MHz
166MHz
143MHz
PC133
125MHz
PC100,
100MHz
1gb pc133 SDRAM DIMM 144pin
54-PIN
PC100
gm72v66841
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PC100
Abstract: PC133 54-PIN HYM71V653201
Text: 2 . PRODUCT QUICK REFERENCE X XX XX X X XX X X - X - X X£ HYNIX MEMORY PRODUCT Q U IC K REFERENCE HY XX I : Industrial Temperature E: Extended Temperature SPEED s 200MHz 183MHz 55 6 7 PRODUCT GROUP 57 : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSTTY& REFRESH
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200MHz
183MHz
166MHz
143MHz
PC133
125MHz
PC100,
100MHz
PC100
54-PIN
HYM71V653201
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