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    HY57V56420B Search Results

    HY57V56420B Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HY57V56420BLT Hynix Semiconductor 4 Banks x 16M x 4-Bit Synchronous DRAM Original PDF
    HY57V56420B(L)T-6 Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V56420B(L)T-8 Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V56420B(L)T-H Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V56420B(L)T-K Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V56420B(L)T-P Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V56420B(L)T-S Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V56420BT Hynix Semiconductor 4 Banks x 16M x 4-Bit Synchronous DRAM Original PDF

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    Abstract: No abstract text available
    Text: HY57V56420B L T 4 Banks x 16M x 4Bit Synchronous DRAM DESCRIPTION The HY57V56420B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420B is organized as 4banks of 16,777,216x4.


    Original     		PDF HY57V56420B 456bit 216x4. 400mil 54pin