Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HY57V168010C Search Results

    HY57V168010C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HY57V168010C

    Abstract: HY57V168010CLTC-8 HY57V168010CLTC-10S
    Text: HY57V168010C 2 Banks x 1M X 8 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V168010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V168010C is organized as 2banks of


    Original     		PDF HY57V168010C HY57V168010C 216-bits 576x8. 400mil 44pin HY57V168010CLTC-8 HY57V168010CLTC-10S

    HY57V168010C

    Abstract: hy57v168010 HY57V168010CTC-10 hy57v16801 HY57V168010CLTC-10S 1SD31-11-MAR98 hy57v168010cltc 1sd31
    Text: HY57V168010C 2 Banks x 1M X 8 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V168010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V168010C is organized as 2banks of


    Original     		PDF HY57V168010C HY57V168010C 216-bits 576x8. 1SD31-11-MAR98 400mil 44pin hy57v168010 HY57V168010CTC-10 hy57v16801 HY57V168010CLTC-10S 1SD31-11-MAR98 hy57v168010cltc 1sd31

    HYM7V65400

    Abstract: No abstract text available
    Text: HYM7V65400C F-Series Unbuffered 4Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V65400C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of sixteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy


    Original     		PDF HYM7V65400C 4Mx64 44-pin 168-pin HYM7V65400

    HY57V164010C-10

    Abstract: hy57v16 HY57V164010 HY57V168010 1SD30-11-MAR98 HY57V164010CLTC-10S
    Text: HY57V164010C 2 Banks x 2M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V164010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010C is organized as 2banks of


    Original     		PDF HY57V164010C HY57V164010C 216-bits 152x4. 1SD30-11-MAR98 400mil 44pin HY57V164010C-10 hy57v16 HY57V164010 HY57V168010 1SD30-11-MAR98 HY57V164010CLTC-10S

    hy57v168010c

    Abstract: HYM7V65400CLTFG-10P HYM7V65400
    Text: HYM7V65400C F-Series Unbuffered 4Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V65400C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of sixteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy


    Original     		PDF HYM7V65400C 4Mx64 44-pin 168-pin hy57v168010c HYM7V65400CLTFG-10P HYM7V65400

    KM48S8030BT-GL

    Abstract: nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832
    Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.


    Original     		PDF PC100 KM48S8030BT-GL nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832

    KM416S4030BT-G10

    Abstract: KM48S2020CT-GL 81F641642B-103FN d4564163g5 S9745-M06 M5M4V16S30DTP gm72v661641ct7j D4564163G5-A10-9JF D4516821AG5 D4516821
    Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.


    Original     		PDF PC100 KM416S4030BT-G10 KM48S2020CT-GL 81F641642B-103FN d4564163g5 S9745-M06 M5M4V16S30DTP gm72v661641ct7j D4564163G5-A10-9JF D4516821AG5 D4516821

    HYM7V65200CLTFG

    Abstract: hy57v168010cltc HYM7V65200C
    Text: HYM7V65200C F-Series Unbuffered 2Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V65200C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of eight 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy


    Original     		PDF HYM7V65200C 2Mx64 44-pin 168-pin HYM7V65200CLTFG hy57v168010cltc

    hy57v168010

    Abstract: TCK-270 HY57V168010CLTC-10S HY57V168
    Text: HYM7V75A200C F-Series Unbuffered 2Mx72 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V75A200C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of nine 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy


    Original     		PDF HYM7V75A200C 2Mx72 44-pin 168-pin hy57v168010 TCK-270 HY57V168010CLTC-10S HY57V168

    hy57v16801

    Abstract: No abstract text available
    Text: HYM7V75A400C F-Series Unbuffered 4Mx72 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V75A400C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of eighteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glassepoxy circuit board. One 0.33µF and one 0.1µF decoupling capacitors are mounted for each SDRAM.


    Original     		PDF HYM7V75A400C 4Mx72 44-pin 168-pin hy57v16801

    KM48S8030BT-GL

    Abstract: NT56V1680A0T D4516821AG5 KM416S4030BT-GL 81f641642b103fn KM48S2020CT-GL D4516821AG5-A107JF gm72v661641ct7j TC59S6408BFT80 D4564163G5
    Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.


    Original     		PDF PC100 KM48S8030BT-GL NT56V1680A0T D4516821AG5 KM416S4030BT-GL 81f641642b103fn KM48S2020CT-GL D4516821AG5-A107JF gm72v661641ct7j TC59S6408BFT80 D4564163G5

    hy57v168010b

    Abstract: ddr sdram 128Mbit 8Mx16 54-PIN
    Text: SDRAM ORDERING INFORMATION 4Mbit SDRAM Cttöanfeattws 256Kx16 Bank 2 1K Bank 2 2 2 Ref. 4K 4K 4K PWtNO» HY57V16401ÛBTC HY57V168010BTC HY57V161610BTC Bänk 2 2 2 Ref. PW Ho. 4K HY57V16401ÛCTC 4K HY57V168010CTC 4K HY57V161610CTC ii/ k - Pm N o. M ax.im x


    OCR Scan     		PDF 256Kx16 HY57V41610TC 400mil 16Mbit 1Mx16 HY57V16401 HY57V168010BTC HY57V161610BTC 44pin) hy57v168010b ddr sdram 128Mbit 8Mx16 54-PIN

    HY57V168

    Abstract: hy57v168010 1sd31 66MHz
    Text: - H Y U N D A I > -• H Y 5 7 V 1 6 8 0 1 0 C 2 Banks x 1M X 8 Bit Synchronous DRAM DESCRIPTION The Hyundai H Y57V 168010C is a 1 6 ,7 7 7 , 216-bits C M OS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. H Y 57V 168010C is organized as 2banks of


    OCR Scan     		PDF 168010C 216-bits 576x8. 57V168010C 400mil 44pin 047CK 1SD31-11-MAR98 HY57V168 hy57v168010 1sd31 66MHz

    HY57V164010

    Abstract: No abstract text available
    Text: -H Y U N D A I - • H Y 57V 164010D 2 Banks X ZU X 4 Bit Synchronous DRAM DESCRIPTION Preliminary The Hyundai HY57V164010D is a 16, 777, 216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010D is organized as 2banks of


    OCR Scan     		PDF 164010D HY57V164010D 216-bits 152x4. 400mil 44pin 40-10-M HY57V164010

    HY57V168

    Abstract: hy57v168010b hym7v64200 hy57v168010a HYM7V64400 HYM7V64400TFG PC100 HYM7V65400 HYM7V64200TFG pc66
    Text: •HYUN DAI Sync. DRAM MODULE - 1 TYPE 168Pin DIMM SIZE 8MB DESCRIPTION 1M X 64 Sync. Unbuffered 16MB 2M X 64 Sync. X HYM7V64200BTRG HYM7V64200TFG HYM7V64200BTFG HYM7V65200CLTFG 72 Sync., ECC HYM7V72A2Q0TFG HYM7V72A200BTFG HYM7V75A2Ö0CLTFG 64 Sync. HYM7V64400TKG


    OCR Scan     		PDF 168Pin HYM7V641OOTRG HYM7V64100BTRG HYM7V6420 8/10P/10S 8/10P/t0S HYM7V64200BTRG HYM7V64200TFG HYM7V64200BTFG HYM7V65200CLTFG HY57V168 hy57v168010b hym7v64200 hy57v168010a HYM7V64400 HYM7V64400TFG PC100 HYM7V65400 pc66

    Untitled

    Abstract: No abstract text available
    Text: - H Y U N D A I • H Y M 7 V 6 5 4 0 0 C F -S E R IE S Unbuffered 4M*64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V65400C is high speed 3.3Volt CMOS Synchronous DRAM m odule consisting of sixteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy


    OCR Scan     		PDF HYM7V65400C 44-pin 168-pin 7oef43-iS> 004/-D-1QÌ C-054

    Untitled

    Abstract: No abstract text available
    Text: -H Y U N D A I — • H Y M 7 V 6 5 2 0 0 C F -S E R IE S Unbuffered 2Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V65200C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of eight 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin gtass-epoxy


    OCR Scan     		PDF 2Mx64 HYM7V65200C 44-pin 168-pin ft0-06+ 004aQ 4J550 0-100f2 85HW5

    HY57V168

    Abstract: No abstract text available
    Text: »fl Y U M 0 A I * H YM 7V 75A 400C F-SER IES Unbuffered 4Mx72 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V75A400C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of eighteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSO P 2K bit EEPROM on a 168-pin glassepoxy circuit board. One 0.33fiF and one 0.1 nF decoupling capacitors are mounted for each SDRAM.


    OCR Scan     		PDF 4Mx72 HYM7V75A400C 44-pin 168-pin 33fiF HY57V168