HY57V164010C-10
Abstract: hy57v16 HY57V164010 HY57V168010 1SD30-11-MAR98 HY57V164010CLTC-10S
Text: HY57V164010C 2 Banks x 2M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V164010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010C is organized as 2banks of
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HY57V164010C
HY57V164010C
216-bits
152x4.
1SD30-11-MAR98
400mil
44pin
HY57V164010C-10
hy57v16
HY57V164010
HY57V168010
1SD30-11-MAR98
HY57V164010CLTC-10S
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hy57v164010c
Abstract: No abstract text available
Text: HY57V164010C 2 Banks x 2M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V164010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010C is organized as 2banks of
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Original
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PDF
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HY57V164010C
HY57V164010C
216-bits
152x4.
400mil
44pin
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X2M ST
Abstract: No abstract text available
Text: »«Y UND ft! - • H Y57V164010C 2 Banks x Z M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V164010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010C is organized as 2banks of
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Y57V164010C
HY57V164010C
216-bits
152x4.
400mil
44pin
1SD30-U-MA298
X2M ST
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Untitled
Abstract: No abstract text available
Text: - H Y U N D A I ♦ HYM7V75AR400C N-SERIES > Registered 4Mx72 bit SDRAM MODULE based on 4Mx4 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V75AR400C is a high speed 3.3Volt Synchronous Dynamic RAM module consisting of eighteen 4Mx4 bit Synchronous DRAMs in TSO PII and one 8-pin T S S O P 2K bit EEPRO M on a 168-pin glass-epoxy
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HYM7V75AR400C
4Mx72
168-pin
hig66MHz
50MHz
HYM7V75AR40GC
111run
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